KR890017383A - 스파터링 타겟(sputtering target) - Google Patents
스파터링 타겟(sputtering target) Download PDFInfo
- Publication number
- KR890017383A KR890017383A KR1019890006544A KR890006544A KR890017383A KR 890017383 A KR890017383 A KR 890017383A KR 1019890006544 A KR1019890006544 A KR 1019890006544A KR 890006544 A KR890006544 A KR 890006544A KR 890017383 A KR890017383 A KR 890017383A
- Authority
- KR
- South Korea
- Prior art keywords
- target
- thin sheet
- sputtering target
- target according
- substrate
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1도는 본 발명의 한예에 따른 스파터링 타겟의 단면도이다, 제 2도는 본 발명의 한예에 따른 스파터링타겟의 사시도이다, 제 3도 내지 제 6도는 종래형의 스파터링 타겟의 구성을 나타내는 사시도이다.
Claims (11)
- 기판(6)상에 복합물로 벤치된 두가지 이상의 타겟요소(2)(3)로 분할되고, 한가지 이상의 타겟 요소물질로 구성되어 있는 얇은 시트(7)사 상기기판(6)과 타겟요소(2)(3) 사이에 삽입되어 있으며, 상기 얇은 시트(7)가 적에도 하나의 금속물질로 구성되어 있는 것을 특징으로 하는 스파터링 타겟(1).
- 제 1항에 있어서, 타겟요소(2)(3)의 구성물질은 Mo,W,Ta,Nb,Ti.Ni.V,Cr,Al과 그들의 화합물로 부터 선택되어지는 것을 특징으로 하는 스파터링타겟.
- 제 1항에 있어서, 타겟요소(2)(3)는 Mo와 Ta로 구성되어있는 복합 타겟을 구성하고 있고, 그리고 얇은 시트(7)의 물질은 Mo와 Ta로 부터 선택되어지는 것을 특징으로 하는 스파터링 타겟.
- 제 1항에 있어서, 얇은 시트(7) 두께는 악 0.05내지 0.6mm인 것을 특징으로 하는 스파터링 타겟.
- 제 1항에 있어서, 얇은 시트(7)의 두께는 약 0.1내지 0.55mm인 것을 특징으로 하는 스파터링 타겟.
- 기관(6), 기판(6)에 배치된 다수개의 타겟요소(2)(3), 그리고 기판(6)의 타겟요소(2)(3) 사이에 삽입되어 있고 타겟요소(2)(3)의 물질중 적어도 한 물질로 구성되어 있는 적어도 하나의 금속물질로 이루어진 얇은 시트(7)로 구성되어 있는 것을 특징으로 하는 스파터링 타겟(1).
- 제 6항에 있어서, 얇은 시트(7)는 고순도의 고융점 금속으로 구성되어 있는 것을 특징으로 하는 스파터링 타겟.
- 제 6항에 있어서, 얇은 시트(7)의 물질은 Mo,W,Ta,Nb,Ti,Ni,V,Gr,Al 그리고 그들의 화합물로 부터 선택되어지는 것을 특징으로 하는 스파터링 타겟.
- 제 6항에 있어서, 타겟요소(2)(3)는 Mo와 Ta로 구성되어 있고 그리고 얇은 시트(7)의 물질은 Mo와 Ta로 부터 선택되어 지는 것을 특징으로 하는 스파터링 타겟.
- 제 6항에 있어서, 얇은 시트(7)의 두께는 약 0.05내지 0.6mm인 것을 특징으로 하는 스파터링 타겟.
- 제 6항에 있어서, 얇은 시트(7)의 두께는 약 0.1내지 0.5mm인 것을 특징으로 하는 스파터링 타겟.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63-118429 | 1988-05-16 | ||
JP88-118429 | 1988-05-16 | ||
JP63118429A JPH01290765A (ja) | 1988-05-16 | 1988-05-16 | スパッタリングターゲット |
Publications (2)
Publication Number | Publication Date |
---|---|
KR890017383A true KR890017383A (ko) | 1989-12-15 |
KR920001274B1 KR920001274B1 (ko) | 1992-02-10 |
Family
ID=14736428
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890006544A KR920001274B1 (ko) | 1988-05-16 | 1989-05-15 | 스파터링 타겟(sputtering targer) |
Country Status (5)
Country | Link |
---|---|
US (1) | US4966676A (ko) |
EP (2) | EP0618306B1 (ko) |
JP (1) | JPH01290765A (ko) |
KR (1) | KR920001274B1 (ko) |
DE (2) | DE68928189T2 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9595655B2 (en) | 2011-09-07 | 2017-03-14 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device and method of manufacturing the same |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
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US5354446A (en) * | 1988-03-03 | 1994-10-11 | Asahi Glass Company Ltd. | Ceramic rotatable magnetron sputtering cathode target and process for its production |
US5087297A (en) * | 1991-01-17 | 1992-02-11 | Johnson Matthey Inc. | Aluminum target for magnetron sputtering and method of making same |
DE9102052U1 (ko) * | 1991-02-21 | 1991-06-13 | Hauzer Holding B.V., Venlo, Nl | |
WO1992017622A1 (en) * | 1991-04-08 | 1992-10-15 | Tosoh Smd, Inc. | Thermally compatible sputter target and backing plate assembly |
JP2677721B2 (ja) * | 1991-05-15 | 1997-11-17 | 功二 橋本 | 高耐食アモルファス合金 |
JPH0586465A (ja) * | 1991-06-28 | 1993-04-06 | Mitsubishi Materials Corp | スパツタリング用ターゲツト及びその製造方法 |
US5320729A (en) * | 1991-07-19 | 1994-06-14 | Hitachi, Ltd. | Sputtering target |
US5271817A (en) * | 1992-03-19 | 1993-12-21 | Vlsi Technology, Inc. | Design for sputter targets to reduce defects in refractory metal films |
TW234767B (ko) * | 1992-09-29 | 1994-11-21 | Nippon En Kk | |
US5693203A (en) * | 1992-09-29 | 1997-12-02 | Japan Energy Corporation | Sputtering target assembly having solid-phase bonded interface |
DE4242079A1 (de) * | 1992-12-14 | 1994-06-16 | Leybold Ag | Target für eine in einer evakuierbaren mit einem Prozeßgas flutbaren Prozeßkammer angeordneten Kathode |
JP2898515B2 (ja) * | 1993-07-15 | 1999-06-02 | 株式会社ジャパンエナジー | モザイクターゲット |
US5466355A (en) * | 1993-07-15 | 1995-11-14 | Japan Energy Corporation | Mosaic target |
US5403458A (en) * | 1993-08-05 | 1995-04-04 | Guardian Industries Corp. | Sputter-coating target and method of use |
DE4426751A1 (de) * | 1994-07-28 | 1996-02-01 | Leybold Ag | Schwimmende Zentralbefestigung, insbesondere für großflächige Sputterkatoden |
US5687600A (en) * | 1994-10-26 | 1997-11-18 | Johnson Matthey Electronics, Inc. | Metal sputtering target assembly |
US5590389A (en) * | 1994-12-23 | 1996-12-31 | Johnson Matthey Electronics, Inc. | Sputtering target with ultra-fine, oriented grains and method of making same |
IL117657A0 (en) * | 1996-03-26 | 1996-07-23 | Technion Res & Dev Foundation | Ceramic target for thin film deposition |
US5863398A (en) * | 1996-10-11 | 1999-01-26 | Johnson Matthey Electonics, Inc. | Hot pressed and sintered sputtering target assemblies and method for making same |
FR2756572B1 (fr) * | 1996-12-04 | 1999-01-08 | Pechiney Aluminium | Alliages d'aluminium a temperature de recristallisation elevee utilisee dans les cibles de pulverisation cathodiques |
US6274015B1 (en) | 1996-12-13 | 2001-08-14 | Honeywell International, Inc. | Diffusion bonded sputtering target assembly with precipitation hardened backing plate and method of making same |
US5803342A (en) * | 1996-12-26 | 1998-09-08 | Johnson Matthey Electronics, Inc. | Method of making high purity copper sputtering targets |
US6045670A (en) * | 1997-01-08 | 2000-04-04 | Applied Materials, Inc. | Back sputtering shield |
KR20010005546A (ko) | 1997-03-19 | 2001-01-15 | 존슨매테이일렉트로닉스, 인코퍼레이티드 | 후면에 확산 니켈 플레이트된 타겟과 그의 생성방법 |
DE19853943B4 (de) * | 1997-11-26 | 2006-04-20 | Vapor Technologies, Inc. (Delaware Corporation), Longmont | Katode zur Zerstäubung oder Bogenaufdampfung sowie Vorrichtung zur Beschichtung oder Ionenimplantation mit einer solchen Katode |
US6451185B2 (en) | 1998-08-12 | 2002-09-17 | Honeywell International Inc. | Diffusion bonded sputtering target assembly with precipitation hardened backing plate and method of making same |
SE519921C2 (sv) * | 1999-05-06 | 2003-04-29 | Sandvik Ab | PVD-belagt skärverktyg och metod för dess framställning |
WO2001033643A1 (en) | 1999-10-29 | 2001-05-10 | Ohio University | BAND GAP ENGINEERING OF AMORPHOUS Al-Ga-N ALLOYS |
WO2001091451A2 (en) | 2000-05-23 | 2001-11-29 | Ohio University | Amorphous aluminum nitride emitter |
JP3887253B2 (ja) * | 2002-03-19 | 2007-02-28 | 日鉱金属株式会社 | スパッタリングターゲット用運搬箱 |
US20030183518A1 (en) * | 2002-03-27 | 2003-10-02 | Glocker David A. | Concave sputtering apparatus |
JP2005537391A (ja) * | 2002-09-03 | 2005-12-08 | ユミコア・マテリアルズ・アクチェンゲゼルシャフト | スパッタ陰極、製造方法およびこれに関する陰極 |
US6848608B2 (en) * | 2002-10-01 | 2005-02-01 | Cabot Corporation | Method of bonding sputtering target materials |
US20050183797A1 (en) * | 2004-02-23 | 2005-08-25 | Ranjan Ray | Fine grained sputtering targets of cobalt and nickel base alloys made via casting in metal molds followed by hot forging and annealing and methods of making same |
US7550066B2 (en) * | 2004-07-09 | 2009-06-23 | Applied Materials, Inc. | Staggered target tiles |
US20060266639A1 (en) * | 2005-05-24 | 2006-11-30 | Applied Materials, Inc. | Sputtering target tiles having structured edges separated by a gap |
US7708868B2 (en) * | 2005-07-08 | 2010-05-04 | Tosoh Smd, Inc. | Variable thickness plate for forming variable wall thickness physical vapor deposition target |
KR101988391B1 (ko) | 2011-06-27 | 2019-06-12 | 솔레라스 리미티드 | 스퍼터링 타겟 |
US20130017316A1 (en) * | 2011-07-15 | 2013-01-17 | Intermolecular, Inc. | Sputter gun |
US9469566B2 (en) | 2015-03-20 | 2016-10-18 | Cardinal Cg Company | Nickel-aluminum blocker film low-emissivity coatings |
US9745792B2 (en) | 2015-03-20 | 2017-08-29 | Cardinal Cg Company | Nickel-aluminum blocker film multiple cavity controlled transmission coating |
US9752377B2 (en) | 2015-03-20 | 2017-09-05 | Cardinal Cg Company | Nickel-aluminum blocker film controlled transmission coating |
US11028012B2 (en) | 2018-10-31 | 2021-06-08 | Cardinal Cg Company | Low solar heat gain coatings, laminated glass assemblies, and methods of producing same |
WO2023141145A1 (en) * | 2022-01-21 | 2023-07-27 | Applied Materials, Inc. | Composite pvd targets |
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GB1072739A (en) * | 1965-03-01 | 1967-06-21 | Ultra Electronics Ltd | Improvements in thin film circuits |
US4209375A (en) * | 1979-08-02 | 1980-06-24 | The United States Of America As Represented By The United States Department Of Energy | Sputter target |
JPS5654462A (en) * | 1979-10-11 | 1981-05-14 | Canon Inc | Copying machine |
JPS57145982A (en) * | 1981-03-03 | 1982-09-09 | Toshiba Corp | Target for sputtering device |
DE3149910A1 (de) * | 1981-12-16 | 1983-06-23 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zur kathodenzerstaeubung von mindestens zwei verschiedenen materialien |
DE3381593D1 (de) * | 1982-10-05 | 1990-06-28 | Fujitsu Ltd | Zerstaeubungsvorrichtung. |
JPS59179784A (ja) * | 1983-03-31 | 1984-10-12 | Fujitsu Ltd | スパツタ装置 |
JPS59179783A (ja) * | 1983-03-31 | 1984-10-12 | Toshiba Corp | スパツタリングタ−ゲツト |
JPS63307265A (ja) * | 1987-06-04 | 1988-12-14 | Toshiba Corp | スパッタリング・タ−ゲット |
-
1988
- 1988-05-16 JP JP63118429A patent/JPH01290765A/ja active Pending
-
1989
- 1989-05-01 US US07/345,175 patent/US4966676A/en not_active Expired - Fee Related
- 1989-05-15 EP EP94201575A patent/EP0618306B1/en not_active Expired - Lifetime
- 1989-05-15 KR KR1019890006544A patent/KR920001274B1/ko not_active IP Right Cessation
- 1989-05-15 DE DE68928189T patent/DE68928189T2/de not_active Expired - Fee Related
- 1989-05-15 EP EP89304881A patent/EP0342894B1/en not_active Expired - Lifetime
- 1989-05-15 DE DE68928421T patent/DE68928421T2/de not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9595655B2 (en) | 2011-09-07 | 2017-03-14 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
EP0618306A3 (en) | 1994-10-26 |
DE68928189D1 (de) | 1997-08-28 |
EP0342894A1 (en) | 1989-11-23 |
DE68928189T2 (de) | 1997-11-13 |
EP0618306A2 (en) | 1994-10-05 |
DE68928421D1 (de) | 1997-12-04 |
US4966676A (en) | 1990-10-30 |
JPH01290765A (ja) | 1989-11-22 |
EP0342894B1 (en) | 1997-07-23 |
EP0618306B1 (en) | 1997-10-29 |
DE68928421T2 (de) | 1998-02-26 |
KR920001274B1 (ko) | 1992-02-10 |
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