DE68928421D1 - Sputtertarget mit verschiedenen Target-Elementen - Google Patents

Sputtertarget mit verschiedenen Target-Elementen

Info

Publication number
DE68928421D1
DE68928421D1 DE68928421T DE68928421T DE68928421D1 DE 68928421 D1 DE68928421 D1 DE 68928421D1 DE 68928421 T DE68928421 T DE 68928421T DE 68928421 T DE68928421 T DE 68928421T DE 68928421 D1 DE68928421 D1 DE 68928421D1
Authority
DE
Germany
Prior art keywords
target
elements
different
sputtering
sputtering target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68928421T
Other languages
English (en)
Other versions
DE68928421T2 (de
Inventor
Yoshiharu Fukasawa
Satoshi Yamaguchi
Hideo Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE68928421D1 publication Critical patent/DE68928421D1/de
Publication of DE68928421T2 publication Critical patent/DE68928421T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
DE68928421T 1988-05-16 1989-05-15 Sputtertarget mit verschiedenen Target-Elementen Expired - Fee Related DE68928421T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63118429A JPH01290765A (ja) 1988-05-16 1988-05-16 スパッタリングターゲット

Publications (2)

Publication Number Publication Date
DE68928421D1 true DE68928421D1 (de) 1997-12-04
DE68928421T2 DE68928421T2 (de) 1998-02-26

Family

ID=14736428

Family Applications (2)

Application Number Title Priority Date Filing Date
DE68928421T Expired - Fee Related DE68928421T2 (de) 1988-05-16 1989-05-15 Sputtertarget mit verschiedenen Target-Elementen
DE68928189T Expired - Fee Related DE68928189T2 (de) 1988-05-16 1989-05-15 Sputtertarget

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE68928189T Expired - Fee Related DE68928189T2 (de) 1988-05-16 1989-05-15 Sputtertarget

Country Status (5)

Country Link
US (1) US4966676A (de)
EP (2) EP0618306B1 (de)
JP (1) JPH01290765A (de)
KR (1) KR920001274B1 (de)
DE (2) DE68928421T2 (de)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5354446A (en) * 1988-03-03 1994-10-11 Asahi Glass Company Ltd. Ceramic rotatable magnetron sputtering cathode target and process for its production
US5087297A (en) * 1991-01-17 1992-02-11 Johnson Matthey Inc. Aluminum target for magnetron sputtering and method of making same
DE9102052U1 (de) * 1991-02-21 1991-06-13 Hauzer Holding B.V., Venlo Indirekt gekühlter Verdampfer mit Schnellwechselsystem
WO1992017622A1 (en) * 1991-04-08 1992-10-15 Tosoh Smd, Inc. Thermally compatible sputter target and backing plate assembly
JP2677721B2 (ja) * 1991-05-15 1997-11-17 功二 橋本 高耐食アモルファス合金
JPH0586465A (ja) * 1991-06-28 1993-04-06 Mitsubishi Materials Corp スパツタリング用ターゲツト及びその製造方法
US5320729A (en) * 1991-07-19 1994-06-14 Hitachi, Ltd. Sputtering target
US5271817A (en) * 1992-03-19 1993-12-21 Vlsi Technology, Inc. Design for sputter targets to reduce defects in refractory metal films
TW234767B (de) * 1992-09-29 1994-11-21 Nippon En Kk
US5693203A (en) * 1992-09-29 1997-12-02 Japan Energy Corporation Sputtering target assembly having solid-phase bonded interface
DE4242079A1 (de) * 1992-12-14 1994-06-16 Leybold Ag Target für eine in einer evakuierbaren mit einem Prozeßgas flutbaren Prozeßkammer angeordneten Kathode
JP2898515B2 (ja) * 1993-07-15 1999-06-02 株式会社ジャパンエナジー モザイクターゲット
US5466355A (en) * 1993-07-15 1995-11-14 Japan Energy Corporation Mosaic target
US5403458A (en) * 1993-08-05 1995-04-04 Guardian Industries Corp. Sputter-coating target and method of use
DE4426751A1 (de) * 1994-07-28 1996-02-01 Leybold Ag Schwimmende Zentralbefestigung, insbesondere für großflächige Sputterkatoden
US5687600A (en) * 1994-10-26 1997-11-18 Johnson Matthey Electronics, Inc. Metal sputtering target assembly
US5590389A (en) * 1994-12-23 1996-12-31 Johnson Matthey Electronics, Inc. Sputtering target with ultra-fine, oriented grains and method of making same
IL117657A0 (en) * 1996-03-26 1996-07-23 Technion Res & Dev Foundation Ceramic target for thin film deposition
US5863398A (en) * 1996-10-11 1999-01-26 Johnson Matthey Electonics, Inc. Hot pressed and sintered sputtering target assemblies and method for making same
FR2756572B1 (fr) * 1996-12-04 1999-01-08 Pechiney Aluminium Alliages d'aluminium a temperature de recristallisation elevee utilisee dans les cibles de pulverisation cathodiques
US6274015B1 (en) 1996-12-13 2001-08-14 Honeywell International, Inc. Diffusion bonded sputtering target assembly with precipitation hardened backing plate and method of making same
US5803342A (en) * 1996-12-26 1998-09-08 Johnson Matthey Electronics, Inc. Method of making high purity copper sputtering targets
US6045670A (en) * 1997-01-08 2000-04-04 Applied Materials, Inc. Back sputtering shield
KR20010005546A (ko) 1997-03-19 2001-01-15 존슨매테이일렉트로닉스, 인코퍼레이티드 후면에 확산 니켈 플레이트된 타겟과 그의 생성방법
AU9410498A (en) * 1997-11-26 1999-06-17 Vapor Technologies, Inc. Apparatus for sputtering or arc evaporation
US6451185B2 (en) 1998-08-12 2002-09-17 Honeywell International Inc. Diffusion bonded sputtering target assembly with precipitation hardened backing plate and method of making same
SE519921C2 (sv) * 1999-05-06 2003-04-29 Sandvik Ab PVD-belagt skärverktyg och metod för dess framställning
WO2001033643A1 (en) 1999-10-29 2001-05-10 Ohio University BAND GAP ENGINEERING OF AMORPHOUS Al-Ga-N ALLOYS
WO2001091451A2 (en) 2000-05-23 2001-11-29 Ohio University Amorphous aluminum nitride emitter
JP3887253B2 (ja) * 2002-03-19 2007-02-28 日鉱金属株式会社 スパッタリングターゲット用運搬箱
US20030183518A1 (en) * 2002-03-27 2003-10-02 Glocker David A. Concave sputtering apparatus
WO2004023515A1 (de) * 2002-09-03 2004-03-18 Umicore Materials Ag Zerstäubungskatode, herstellverfahren sowie katode hierzu
US6848608B2 (en) * 2002-10-01 2005-02-01 Cabot Corporation Method of bonding sputtering target materials
US20050183797A1 (en) * 2004-02-23 2005-08-25 Ranjan Ray Fine grained sputtering targets of cobalt and nickel base alloys made via casting in metal molds followed by hot forging and annealing and methods of making same
US7550066B2 (en) * 2004-07-09 2009-06-23 Applied Materials, Inc. Staggered target tiles
US20060266639A1 (en) * 2005-05-24 2006-11-30 Applied Materials, Inc. Sputtering target tiles having structured edges separated by a gap
US7708868B2 (en) * 2005-07-08 2010-05-04 Tosoh Smd, Inc. Variable thickness plate for forming variable wall thickness physical vapor deposition target
EP2723915A1 (de) 2011-06-27 2014-04-30 Soleras Ltd. Sputter-target
US20130017316A1 (en) * 2011-07-15 2013-01-17 Intermolecular, Inc. Sputter gun
DE112011105592B4 (de) 2011-09-07 2019-06-27 Toyota Jidosha Kabushiki Kaisha Halbleitereinrichtung und Verfahren zur Herstellung derselben
US9745792B2 (en) 2015-03-20 2017-08-29 Cardinal Cg Company Nickel-aluminum blocker film multiple cavity controlled transmission coating
US9469566B2 (en) 2015-03-20 2016-10-18 Cardinal Cg Company Nickel-aluminum blocker film low-emissivity coatings
US9752377B2 (en) 2015-03-20 2017-09-05 Cardinal Cg Company Nickel-aluminum blocker film controlled transmission coating
US11028012B2 (en) 2018-10-31 2021-06-08 Cardinal Cg Company Low solar heat gain coatings, laminated glass assemblies, and methods of producing same
WO2023141145A1 (en) * 2022-01-21 2023-07-27 Applied Materials, Inc. Composite pvd targets

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1072739A (en) * 1965-03-01 1967-06-21 Ultra Electronics Ltd Improvements in thin film circuits
US4209375A (en) * 1979-08-02 1980-06-24 The United States Of America As Represented By The United States Department Of Energy Sputter target
JPS5654462A (en) * 1979-10-11 1981-05-14 Canon Inc Copying machine
JPS57145982A (en) * 1981-03-03 1982-09-09 Toshiba Corp Target for sputtering device
DE3149910A1 (de) * 1981-12-16 1983-06-23 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zur kathodenzerstaeubung von mindestens zwei verschiedenen materialien
DE3381593D1 (de) * 1982-10-05 1990-06-28 Fujitsu Ltd Zerstaeubungsvorrichtung.
JPS59179784A (ja) * 1983-03-31 1984-10-12 Fujitsu Ltd スパツタ装置
JPS59179783A (ja) * 1983-03-31 1984-10-12 Toshiba Corp スパツタリングタ−ゲツト
JPS63307265A (ja) * 1987-06-04 1988-12-14 Toshiba Corp スパッタリング・タ−ゲット

Also Published As

Publication number Publication date
DE68928421T2 (de) 1998-02-26
DE68928189D1 (de) 1997-08-28
EP0618306A3 (de) 1994-10-26
KR920001274B1 (ko) 1992-02-10
KR890017383A (ko) 1989-12-15
EP0618306B1 (de) 1997-10-29
JPH01290765A (ja) 1989-11-22
US4966676A (en) 1990-10-30
DE68928189T2 (de) 1997-11-13
EP0618306A2 (de) 1994-10-05
EP0342894A1 (de) 1989-11-23
EP0342894B1 (de) 1997-07-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee