DE69815980D1 - Gaslaser, Belichtungsapparatur sowie Verfahren zur Herstellung von Halbleiterbauelementen unter Verwendung derselben - Google Patents

Gaslaser, Belichtungsapparatur sowie Verfahren zur Herstellung von Halbleiterbauelementen unter Verwendung derselben

Info

Publication number
DE69815980D1
DE69815980D1 DE69815980T DE69815980T DE69815980D1 DE 69815980 D1 DE69815980 D1 DE 69815980D1 DE 69815980 T DE69815980 T DE 69815980T DE 69815980 T DE69815980 T DE 69815980T DE 69815980 D1 DE69815980 D1 DE 69815980D1
Authority
DE
Germany
Prior art keywords
same
exposure apparatus
semiconductor components
gas laser
producing semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69815980T
Other languages
English (en)
Other versions
DE69815980T2 (de
Inventor
Naoto Sano
Yoshiyuki Nagai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69815980D1 publication Critical patent/DE69815980D1/de
Application granted granted Critical
Publication of DE69815980T2 publication Critical patent/DE69815980T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02Constructional details
    • H01S3/03Constructional details of gas laser discharge tubes
    • H01S3/036Means for obtaining or maintaining the desired gas pressure within the tube, e.g. by gettering, replenishing; Means for circulating the gas, e.g. for equalising the pressure within the tube
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22Gases
    • H01S3/223Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2251ArF, i.e. argon fluoride is comprised for lasing around 193 nm
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22Gases
    • H01S3/223Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2256KrF, i.e. krypton fluoride is comprised for lasing around 248 nm
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/22Gases
    • H01S3/223Gases the active gas being polyatomic, i.e. containing two or more atoms
    • H01S3/225Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
    • H01S3/2258F2, i.e. molecular fluoride is comprised for lasing around 157 nm

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Lasers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69815980T 1997-10-03 1998-09-30 Gaslaser, Belichtungsapparatur sowie Verfahren zur Herstellung von Halbleiterbauelementen unter Verwendung derselben Expired - Lifetime DE69815980T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP27125397 1997-10-03
JP27125397A JP3697036B2 (ja) 1997-10-03 1997-10-03 露光装置及びそれを用いた半導体製造方法

Publications (2)

Publication Number Publication Date
DE69815980D1 true DE69815980D1 (de) 2003-08-07
DE69815980T2 DE69815980T2 (de) 2004-04-15

Family

ID=17497503

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69815980T Expired - Lifetime DE69815980T2 (de) 1997-10-03 1998-09-30 Gaslaser, Belichtungsapparatur sowie Verfahren zur Herstellung von Halbleiterbauelementen unter Verwendung derselben

Country Status (5)

Country Link
US (2) US7031364B2 (de)
EP (1) EP0907228B1 (de)
JP (1) JP3697036B2 (de)
KR (1) KR100322331B1 (de)
DE (1) DE69815980T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4497650B2 (ja) * 2000-04-26 2010-07-07 キヤノン株式会社 レーザ発振装置、露光装置および半導体デバイス製造方法
KR100624081B1 (ko) 2002-01-31 2006-09-19 캐논 가부시끼가이샤 레이저장치, 노광장치 및 노광방법
JPWO2007066700A1 (ja) * 2005-12-09 2009-05-21 株式会社ニコン レーザ光源装置、並びに露光方法及び装置
JP4782887B1 (ja) 2010-04-02 2011-09-28 ファナック株式会社 ガスレーザ装置
EP3358377A4 (de) * 2015-09-30 2019-05-01 Nikon Corporation Optisches element, kammer und lichtquellenvorrichtung
WO2021001951A1 (ja) * 2019-07-03 2021-01-07 ギガフォトン株式会社 レーザチャンバ及び電子デバイスの製造方法

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US4274065A (en) * 1979-07-31 1981-06-16 The United States Of America As Represented By The Secretary Of The Air Force Closed cycle annular-return gas flow electrical discharge laser
US4611326A (en) * 1983-03-28 1986-09-09 Digital Equipment Corporation Circuitry for identifying the validity of received data words
US4611327A (en) * 1983-11-25 1986-09-09 Amoco Corporation Gas transport laser system
US4785458A (en) * 1984-02-13 1988-11-15 Mitsubishi Denki Kabushiki Kaisha Gas laser device
JPS6226881A (ja) 1985-07-26 1987-02-04 Mitsubishi Electric Corp レ−ザ発振器
JPS62109634A (ja) 1985-11-08 1987-05-20 凸版印刷株式会社 折畳み容器の成形方法
JPS62281484A (ja) 1986-05-30 1987-12-07 Mitsubishi Electric Corp レ−ザ発振装置
JPS6370081A (ja) 1986-09-09 1988-03-30 松下冷機株式会社 断熱箱体の製造法
JPS6386587A (ja) 1986-09-30 1988-04-16 Komatsu Ltd 気体レ−ザ装置
JPS6415249A (en) 1987-07-07 1989-01-19 Kao Corp Sulfurizing prevented facing for organic binder mold
US5023884A (en) * 1988-01-15 1991-06-11 Cymer Laser Technologies Compact excimer laser
JP2659210B2 (ja) * 1988-05-19 1997-09-30 ファナック株式会社 Ncレーザ装置
JPH0213769A (ja) 1988-06-30 1990-01-18 Toshiba Corp 電子機器の冷却装置
JPH0269785A (ja) 1988-09-05 1990-03-08 Canon Inc 複写装置
JP2926241B2 (ja) 1989-05-09 1999-07-28 株式会社ニコン 露光装置及び方法
US5383217A (en) * 1989-05-09 1995-01-17 Nikon Corporation Exposure apparatus with laser source requiring new gas introduction
JPH0346787A (ja) 1989-07-12 1991-02-28 Matsushita Electric Ind Co Ltd 誘導加熱調理器
JPH0370426A (ja) 1989-08-08 1991-03-26 Honma Eiichi 送風機の保護装置
JPH03201493A (ja) * 1989-12-28 1991-09-03 Amada Co Ltd レーザ発振器のガス循環制御装置
DE4002185C2 (de) * 1990-01-25 1994-01-13 Lambda Physik Forschung Vorrichtung zum Reinigen von Lasergas
JPH03295285A (ja) 1990-04-12 1991-12-26 Fanuc Ltd ガスレーザ装置
JPH0422181A (ja) 1990-05-17 1992-01-27 Fanuc Ltd 送風機の異常検出方式
JPH0457077A (ja) 1990-06-27 1992-02-24 Ricoh Co Ltd 画像処理装置
US5250797A (en) 1990-10-05 1993-10-05 Canon Kabushiki Kaisha Exposure method and apparatus for controlling light pulse emission using determined exposure quantities and control parameters
JP2877998B2 (ja) * 1991-09-03 1999-04-05 キヤノン株式会社 半導体製造装置
JPH05190435A (ja) * 1992-01-17 1993-07-30 Hitachi Ltd 半導体装置の電子線描画方法
US5463650A (en) 1992-07-17 1995-10-31 Kabushiki Kaisha Komatsu Seisakusho Apparatus for controlling output of an excimer laser device
JP3425447B2 (ja) 1992-09-14 2003-07-14 株式会社小松製作所 エキシマレーザ装置の出力制御装置
US5373523A (en) * 1992-10-15 1994-12-13 Kabushiki Kaisha Komatsu Seisakusho Excimer laser apparatus
JPH06151282A (ja) * 1992-11-04 1994-05-31 Nikon Corp 荷電粒子線露光装置のデータ変換方法
US5377215A (en) * 1992-11-13 1994-12-27 Cymer Laser Technologies Excimer laser
US5450436A (en) * 1992-11-20 1995-09-12 Kabushiki Kaisha Komatsu Seisakusho Laser gas replenishing apparatus and method in excimer laser system
US5440578B1 (en) * 1993-07-16 2000-10-24 Cymer Inc Gas replenishment method ad apparatus for excimer lasers
JP3363532B2 (ja) 1993-07-26 2003-01-08 キヤノン株式会社 走査型露光装置
JP2631080B2 (ja) * 1993-10-05 1997-07-16 株式会社小松製作所 レーザ装置の出力制御装置
JPH0845828A (ja) * 1994-08-01 1996-02-16 Canon Inc 半導体露光装置
JP3308745B2 (ja) * 1994-12-02 2002-07-29 キヤノン株式会社 半導体露光装置および半導体デバイス製造方法
JP3296528B2 (ja) * 1994-12-09 2002-07-02 キヤノン株式会社 半導体露光装置およびデバイス製造方法
CA2190697C (en) * 1996-01-31 2000-07-25 Donald Glenn Larson Blower motor with adjustable timing
US6215806B1 (en) * 1996-03-07 2001-04-10 Canon Kabushiki Kaisha Excimer laser generator provided with a laser chamber with a fluoride passivated inner surface
JP3796294B2 (ja) * 1996-07-09 2006-07-12 キヤノン株式会社 照明光学系及び露光装置
JPH1097986A (ja) * 1996-09-20 1998-04-14 Nikon Corp 露光装置
US5978070A (en) * 1998-02-19 1999-11-02 Nikon Corporation Projection exposure apparatus
US6023486A (en) * 1998-08-28 2000-02-08 Cymer, Inc. Soldered fan assembly for electric discharge laser
US6144686A (en) * 1998-08-28 2000-11-07 Cymer, Inc. Tangential fan with cutoff assembly and vibration control for electric discharge laser
US6061376A (en) * 1998-08-28 2000-05-09 Cymer, Inc. Tangential fan for excimer laser
US6195378B1 (en) * 1998-08-28 2001-02-27 Cymer, Inc. Twisted blade tangential fan for excimer laser

Also Published As

Publication number Publication date
JP3697036B2 (ja) 2005-09-21
US20010046248A1 (en) 2001-11-29
DE69815980T2 (de) 2004-04-15
EP0907228B1 (de) 2003-07-02
KR100322331B1 (ko) 2002-03-08
KR19990036752A (ko) 1999-05-25
JPH11112064A (ja) 1999-04-23
US20060093009A1 (en) 2006-05-04
EP0907228A1 (de) 1999-04-07
US7031364B2 (en) 2006-04-18

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Legal Events

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