DE69815980D1 - Gaslaser, Belichtungsapparatur sowie Verfahren zur Herstellung von Halbleiterbauelementen unter Verwendung derselben - Google Patents
Gaslaser, Belichtungsapparatur sowie Verfahren zur Herstellung von Halbleiterbauelementen unter Verwendung derselbenInfo
- Publication number
- DE69815980D1 DE69815980D1 DE69815980T DE69815980T DE69815980D1 DE 69815980 D1 DE69815980 D1 DE 69815980D1 DE 69815980 T DE69815980 T DE 69815980T DE 69815980 T DE69815980 T DE 69815980T DE 69815980 D1 DE69815980 D1 DE 69815980D1
- Authority
- DE
- Germany
- Prior art keywords
- same
- exposure apparatus
- semiconductor components
- gas laser
- producing semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
- H01S3/036—Means for obtaining or maintaining the desired gas pressure within the tube, e.g. by gettering, replenishing; Means for circulating the gas, e.g. for equalising the pressure within the tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
- H01S3/2251—ArF, i.e. argon fluoride is comprised for lasing around 193 nm
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
- H01S3/2256—KrF, i.e. krypton fluoride is comprised for lasing around 248 nm
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
- H01S3/2258—F2, i.e. molecular fluoride is comprised for lasing around 157 nm
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Lasers (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27125397 | 1997-10-03 | ||
JP27125397A JP3697036B2 (ja) | 1997-10-03 | 1997-10-03 | 露光装置及びそれを用いた半導体製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69815980D1 true DE69815980D1 (de) | 2003-08-07 |
DE69815980T2 DE69815980T2 (de) | 2004-04-15 |
Family
ID=17497503
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69815980T Expired - Lifetime DE69815980T2 (de) | 1997-10-03 | 1998-09-30 | Gaslaser, Belichtungsapparatur sowie Verfahren zur Herstellung von Halbleiterbauelementen unter Verwendung derselben |
Country Status (5)
Country | Link |
---|---|
US (2) | US7031364B2 (de) |
EP (1) | EP0907228B1 (de) |
JP (1) | JP3697036B2 (de) |
KR (1) | KR100322331B1 (de) |
DE (1) | DE69815980T2 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4497650B2 (ja) * | 2000-04-26 | 2010-07-07 | キヤノン株式会社 | レーザ発振装置、露光装置および半導体デバイス製造方法 |
KR100624081B1 (ko) | 2002-01-31 | 2006-09-19 | 캐논 가부시끼가이샤 | 레이저장치, 노광장치 및 노광방법 |
JPWO2007066700A1 (ja) * | 2005-12-09 | 2009-05-21 | 株式会社ニコン | レーザ光源装置、並びに露光方法及び装置 |
JP4782887B1 (ja) | 2010-04-02 | 2011-09-28 | ファナック株式会社 | ガスレーザ装置 |
EP3358377A4 (de) * | 2015-09-30 | 2019-05-01 | Nikon Corporation | Optisches element, kammer und lichtquellenvorrichtung |
WO2021001951A1 (ja) * | 2019-07-03 | 2021-01-07 | ギガフォトン株式会社 | レーザチャンバ及び電子デバイスの製造方法 |
Family Cites Families (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4274065A (en) * | 1979-07-31 | 1981-06-16 | The United States Of America As Represented By The Secretary Of The Air Force | Closed cycle annular-return gas flow electrical discharge laser |
US4611326A (en) * | 1983-03-28 | 1986-09-09 | Digital Equipment Corporation | Circuitry for identifying the validity of received data words |
US4611327A (en) * | 1983-11-25 | 1986-09-09 | Amoco Corporation | Gas transport laser system |
US4785458A (en) * | 1984-02-13 | 1988-11-15 | Mitsubishi Denki Kabushiki Kaisha | Gas laser device |
JPS6226881A (ja) | 1985-07-26 | 1987-02-04 | Mitsubishi Electric Corp | レ−ザ発振器 |
JPS62109634A (ja) | 1985-11-08 | 1987-05-20 | 凸版印刷株式会社 | 折畳み容器の成形方法 |
JPS62281484A (ja) | 1986-05-30 | 1987-12-07 | Mitsubishi Electric Corp | レ−ザ発振装置 |
JPS6370081A (ja) | 1986-09-09 | 1988-03-30 | 松下冷機株式会社 | 断熱箱体の製造法 |
JPS6386587A (ja) | 1986-09-30 | 1988-04-16 | Komatsu Ltd | 気体レ−ザ装置 |
JPS6415249A (en) | 1987-07-07 | 1989-01-19 | Kao Corp | Sulfurizing prevented facing for organic binder mold |
US5023884A (en) * | 1988-01-15 | 1991-06-11 | Cymer Laser Technologies | Compact excimer laser |
JP2659210B2 (ja) * | 1988-05-19 | 1997-09-30 | ファナック株式会社 | Ncレーザ装置 |
JPH0213769A (ja) | 1988-06-30 | 1990-01-18 | Toshiba Corp | 電子機器の冷却装置 |
JPH0269785A (ja) | 1988-09-05 | 1990-03-08 | Canon Inc | 複写装置 |
JP2926241B2 (ja) | 1989-05-09 | 1999-07-28 | 株式会社ニコン | 露光装置及び方法 |
US5383217A (en) * | 1989-05-09 | 1995-01-17 | Nikon Corporation | Exposure apparatus with laser source requiring new gas introduction |
JPH0346787A (ja) | 1989-07-12 | 1991-02-28 | Matsushita Electric Ind Co Ltd | 誘導加熱調理器 |
JPH0370426A (ja) | 1989-08-08 | 1991-03-26 | Honma Eiichi | 送風機の保護装置 |
JPH03201493A (ja) * | 1989-12-28 | 1991-09-03 | Amada Co Ltd | レーザ発振器のガス循環制御装置 |
DE4002185C2 (de) * | 1990-01-25 | 1994-01-13 | Lambda Physik Forschung | Vorrichtung zum Reinigen von Lasergas |
JPH03295285A (ja) | 1990-04-12 | 1991-12-26 | Fanuc Ltd | ガスレーザ装置 |
JPH0422181A (ja) | 1990-05-17 | 1992-01-27 | Fanuc Ltd | 送風機の異常検出方式 |
JPH0457077A (ja) | 1990-06-27 | 1992-02-24 | Ricoh Co Ltd | 画像処理装置 |
US5250797A (en) | 1990-10-05 | 1993-10-05 | Canon Kabushiki Kaisha | Exposure method and apparatus for controlling light pulse emission using determined exposure quantities and control parameters |
JP2877998B2 (ja) * | 1991-09-03 | 1999-04-05 | キヤノン株式会社 | 半導体製造装置 |
JPH05190435A (ja) * | 1992-01-17 | 1993-07-30 | Hitachi Ltd | 半導体装置の電子線描画方法 |
US5463650A (en) | 1992-07-17 | 1995-10-31 | Kabushiki Kaisha Komatsu Seisakusho | Apparatus for controlling output of an excimer laser device |
JP3425447B2 (ja) | 1992-09-14 | 2003-07-14 | 株式会社小松製作所 | エキシマレーザ装置の出力制御装置 |
US5373523A (en) * | 1992-10-15 | 1994-12-13 | Kabushiki Kaisha Komatsu Seisakusho | Excimer laser apparatus |
JPH06151282A (ja) * | 1992-11-04 | 1994-05-31 | Nikon Corp | 荷電粒子線露光装置のデータ変換方法 |
US5377215A (en) * | 1992-11-13 | 1994-12-27 | Cymer Laser Technologies | Excimer laser |
US5450436A (en) * | 1992-11-20 | 1995-09-12 | Kabushiki Kaisha Komatsu Seisakusho | Laser gas replenishing apparatus and method in excimer laser system |
US5440578B1 (en) * | 1993-07-16 | 2000-10-24 | Cymer Inc | Gas replenishment method ad apparatus for excimer lasers |
JP3363532B2 (ja) | 1993-07-26 | 2003-01-08 | キヤノン株式会社 | 走査型露光装置 |
JP2631080B2 (ja) * | 1993-10-05 | 1997-07-16 | 株式会社小松製作所 | レーザ装置の出力制御装置 |
JPH0845828A (ja) * | 1994-08-01 | 1996-02-16 | Canon Inc | 半導体露光装置 |
JP3308745B2 (ja) * | 1994-12-02 | 2002-07-29 | キヤノン株式会社 | 半導体露光装置および半導体デバイス製造方法 |
JP3296528B2 (ja) * | 1994-12-09 | 2002-07-02 | キヤノン株式会社 | 半導体露光装置およびデバイス製造方法 |
CA2190697C (en) * | 1996-01-31 | 2000-07-25 | Donald Glenn Larson | Blower motor with adjustable timing |
US6215806B1 (en) * | 1996-03-07 | 2001-04-10 | Canon Kabushiki Kaisha | Excimer laser generator provided with a laser chamber with a fluoride passivated inner surface |
JP3796294B2 (ja) * | 1996-07-09 | 2006-07-12 | キヤノン株式会社 | 照明光学系及び露光装置 |
JPH1097986A (ja) * | 1996-09-20 | 1998-04-14 | Nikon Corp | 露光装置 |
US5978070A (en) * | 1998-02-19 | 1999-11-02 | Nikon Corporation | Projection exposure apparatus |
US6023486A (en) * | 1998-08-28 | 2000-02-08 | Cymer, Inc. | Soldered fan assembly for electric discharge laser |
US6144686A (en) * | 1998-08-28 | 2000-11-07 | Cymer, Inc. | Tangential fan with cutoff assembly and vibration control for electric discharge laser |
US6061376A (en) * | 1998-08-28 | 2000-05-09 | Cymer, Inc. | Tangential fan for excimer laser |
US6195378B1 (en) * | 1998-08-28 | 2001-02-27 | Cymer, Inc. | Twisted blade tangential fan for excimer laser |
-
1997
- 1997-10-03 JP JP27125397A patent/JP3697036B2/ja not_active Expired - Fee Related
-
1998
- 1998-09-30 DE DE69815980T patent/DE69815980T2/de not_active Expired - Lifetime
- 1998-09-30 EP EP98307966A patent/EP0907228B1/de not_active Expired - Lifetime
- 1998-09-30 US US09/163,402 patent/US7031364B2/en not_active Expired - Fee Related
- 1998-10-01 KR KR1019980041325A patent/KR100322331B1/ko not_active IP Right Cessation
-
2005
- 2005-12-02 US US11/292,195 patent/US20060093009A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP3697036B2 (ja) | 2005-09-21 |
US20010046248A1 (en) | 2001-11-29 |
DE69815980T2 (de) | 2004-04-15 |
EP0907228B1 (de) | 2003-07-02 |
KR100322331B1 (ko) | 2002-03-08 |
KR19990036752A (ko) | 1999-05-25 |
JPH11112064A (ja) | 1999-04-23 |
US20060093009A1 (en) | 2006-05-04 |
EP0907228A1 (de) | 1999-04-07 |
US7031364B2 (en) | 2006-04-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |