DE69813997D1 - Halbleiterlaser mit verbesserten stromsperrenden Schichten und Herstellungsverfahren - Google Patents

Halbleiterlaser mit verbesserten stromsperrenden Schichten und Herstellungsverfahren

Info

Publication number
DE69813997D1
DE69813997D1 DE69813997T DE69813997T DE69813997D1 DE 69813997 D1 DE69813997 D1 DE 69813997D1 DE 69813997 T DE69813997 T DE 69813997T DE 69813997 T DE69813997 T DE 69813997T DE 69813997 D1 DE69813997 D1 DE 69813997D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
manufacturing processes
current blocking
blocking layers
improved current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69813997T
Other languages
English (en)
Other versions
DE69813997T2 (de
Inventor
Hiroaki Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Compound Semiconductor Devices Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Compound Semiconductor Devices Ltd filed Critical NEC Compound Semiconductor Devices Ltd
Publication of DE69813997D1 publication Critical patent/DE69813997D1/de
Application granted granted Critical
Publication of DE69813997T2 publication Critical patent/DE69813997T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H01S5/2219—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties absorbing

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69813997T 1997-11-07 1998-11-09 Halbleiterlaser mit verbesserten stromsperrenden Schichten und Herstellungsverfahren Expired - Fee Related DE69813997T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP30607797 1997-11-07
JP30607797A JP3270374B2 (ja) 1997-11-07 1997-11-07 半導体レーザの製造方法

Publications (2)

Publication Number Publication Date
DE69813997D1 true DE69813997D1 (de) 2003-06-05
DE69813997T2 DE69813997T2 (de) 2004-05-19

Family

ID=17952770

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69813997T Expired - Fee Related DE69813997T2 (de) 1997-11-07 1998-11-09 Halbleiterlaser mit verbesserten stromsperrenden Schichten und Herstellungsverfahren

Country Status (4)

Country Link
US (1) US6345064B1 (de)
EP (1) EP0915542B1 (de)
JP (1) JP3270374B2 (de)
DE (1) DE69813997T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002094189A (ja) * 2000-09-14 2002-03-29 Sharp Corp 窒化物半導体レーザ素子およびそれを用いた光学装置
JP4033626B2 (ja) * 2000-10-06 2008-01-16 日本オプネクスト株式会社 半導体レーザ装置の製造方法
JP2002134838A (ja) * 2000-10-30 2002-05-10 Mitsubishi Electric Corp 半導体レーザ装置及びその製造方法
KR101045160B1 (ko) * 2002-12-20 2011-06-30 크리 인코포레이티드 자기정렬 반도체 메사와 콘택층을 구비한 반도체 소자형성방법 및 그에 관련된 소자
JP4313628B2 (ja) * 2003-08-18 2009-08-12 パナソニック株式会社 半導体レーザおよびその製造方法
US7646797B1 (en) 2008-07-23 2010-01-12 The United States Of America As Represented By The Secretary Of The Army Use of current channeling in multiple node laser systems and methods thereof
KR20120131983A (ko) * 2011-05-27 2012-12-05 삼성전자주식회사 전류제한층을 구비한 반도체 발광 소자
JP6032427B2 (ja) * 2013-02-27 2016-11-30 セイコーエプソン株式会社 光伝導アンテナ、カメラ、イメージング装置、および計測装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6077485A (ja) * 1983-10-03 1985-05-02 Mitsubishi Electric Corp 半導体レ−ザ装置
JPH05291680A (ja) 1992-04-08 1993-11-05 Oki Electric Ind Co Ltd 半導体レーザおよびその製造方法
JPH0685396A (ja) 1992-09-07 1994-03-25 Fujitsu Ltd 半導体レーザ装置の製造方法
JP2914847B2 (ja) * 1993-07-09 1999-07-05 株式会社東芝 半導体レーザ装置
JPH10107368A (ja) 1996-09-30 1998-04-24 Nec Corp 半導体レーザ及びその製造方法

Also Published As

Publication number Publication date
EP0915542A2 (de) 1999-05-12
JP3270374B2 (ja) 2002-04-02
US6345064B1 (en) 2002-02-05
EP0915542B1 (de) 2003-05-02
JPH11145552A (ja) 1999-05-28
EP0915542A3 (de) 2001-10-24
DE69813997T2 (de) 2004-05-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee