DE69814379D1 - Laser mit selektiv veränderter strombegrenzungsschicht - Google Patents

Laser mit selektiv veränderter strombegrenzungsschicht

Info

Publication number
DE69814379D1
DE69814379D1 DE69814379T DE69814379T DE69814379D1 DE 69814379 D1 DE69814379 D1 DE 69814379D1 DE 69814379 T DE69814379 T DE 69814379T DE 69814379 T DE69814379 T DE 69814379T DE 69814379 D1 DE69814379 D1 DE 69814379D1
Authority
DE
Germany
Prior art keywords
selective
laser
current layer
changed current
changed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69814379T
Other languages
English (en)
Other versions
DE69814379T2 (de
Inventor
K Guenter
H Johnson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Finisar Corp
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of DE69814379D1 publication Critical patent/DE69814379D1/de
Application granted granted Critical
Publication of DE69814379T2 publication Critical patent/DE69814379T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/1833—Position of the structure with more than one structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
DE69814379T 1997-03-06 1998-03-04 Laser mit selektiv veränderter strombegrenzungsschicht Expired - Lifetime DE69814379T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/812,620 US5903588A (en) 1997-03-06 1997-03-06 Laser with a selectively changed current confining layer
PCT/US1998/004170 WO1998039824A1 (en) 1997-03-06 1998-03-04 Laser with a selectively changed current confining layer
US812620 2001-03-20

Publications (2)

Publication Number Publication Date
DE69814379D1 true DE69814379D1 (de) 2003-06-12
DE69814379T2 DE69814379T2 (de) 2004-03-25

Family

ID=25210145

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69814379T Expired - Lifetime DE69814379T2 (de) 1997-03-06 1998-03-04 Laser mit selektiv veränderter strombegrenzungsschicht
DE69825800T Expired - Lifetime DE69825800T2 (de) 1997-03-06 1998-03-04 Laser mit selektiv veränderter Strombegrenzungsschicht

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69825800T Expired - Lifetime DE69825800T2 (de) 1997-03-06 1998-03-04 Laser mit selektiv veränderter Strombegrenzungsschicht

Country Status (5)

Country Link
US (1) US5903588A (de)
EP (2) EP0985255B1 (de)
JP (2) JP3928883B2 (de)
DE (2) DE69814379T2 (de)
WO (1) WO1998039824A1 (de)

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US6304588B1 (en) * 1997-02-07 2001-10-16 Xerox Corporation Method and structure for eliminating polarization instability in laterally-oxidized VCSELs
TW336358B (en) * 1997-10-14 1998-07-11 Ind Tech Res Inst Laser diode for digital versatile disk (DVD) and process for producing the same
US6075802A (en) * 1998-03-12 2000-06-13 Telefonaktiebolaget L, Ericsson Lateral confinement laser
US6223222B1 (en) 1998-05-14 2001-04-24 3Com Corporation Method and system for providing quality-of-service in a data-over-cable system using configuration protocol messaging
US6314118B1 (en) * 1998-11-05 2001-11-06 Gore Enterprise Holdings, Inc. Semiconductor device with aligned oxide apertures and contact to an intervening layer
ATE200944T1 (de) * 1999-02-11 2001-05-15 Avalon Photonics Ltd Halbleiterlaser und herstellungsverfahren
US6411638B1 (en) 1999-08-31 2002-06-25 Honeywell Inc. Coupled cavity anti-guided vertical-cavity surface-emitting laser
US6937637B1 (en) * 2000-02-01 2005-08-30 Research Investment Network, Inc. Semiconductor laser and associated drive circuit substrate
KR100584541B1 (ko) * 2000-02-24 2006-05-30 삼성전자주식회사 표면광 레이저 및 그 제조방법
DE10008584A1 (de) * 2000-02-24 2001-09-13 Osram Opto Semiconductors Gmbh Halbleiterbauelement für die Emission elektromagnetischer Strahlung und Verfahren zu dessen Herstellung
DE10026262B4 (de) * 2000-05-26 2005-03-17 Osram Opto Semiconductors Gmbh Vertikalresonator-Laserdiode (VCSEL)
US6658040B1 (en) * 2000-07-28 2003-12-02 Agilent Technologies, Inc. High speed VCSEL
DE10038235A1 (de) * 2000-08-04 2002-02-21 Osram Opto Semiconductors Gmbh Oberflächenemittierender Laser mit seitlicher Strominjektion
US6905900B1 (en) 2000-11-28 2005-06-14 Finisar Corporation Versatile method and system for single mode VCSELs
US7065124B2 (en) * 2000-11-28 2006-06-20 Finlsar Corporation Electron affinity engineered VCSELs
US6990135B2 (en) 2002-10-28 2006-01-24 Finisar Corporation Distributed bragg reflector for optoelectronic device
JP3619155B2 (ja) * 2001-01-17 2005-02-09 キヤノン株式会社 面発光レーザ装置、その製造方法、およびその駆動方法
US6904072B2 (en) * 2001-12-28 2005-06-07 Finisar Corporation Vertical cavity surface emitting laser having a gain guide aperture interior to an oxide confinement layer
JP4537658B2 (ja) * 2002-02-22 2010-09-01 株式会社リコー 面発光レーザ素子、該面発光レーザ素子を用いた面発光レーザアレイ、電子写真システム、面発光レーザモジュール、光通信システム、光インターコネクションシステム、および面発光レーザ素子の製造方法
US6795478B2 (en) * 2002-03-28 2004-09-21 Applied Optoelectronics, Inc. VCSEL with antiguide current confinement layer
JP3966067B2 (ja) * 2002-04-26 2007-08-29 富士ゼロックス株式会社 表面発光型半導体レーザ素子およびその製造方法
US6949473B2 (en) * 2002-05-24 2005-09-27 Finisar Corporation Methods for identifying and removing an oxide-induced dead zone in a semiconductor device structure
JP2004063969A (ja) * 2002-07-31 2004-02-26 Victor Co Of Japan Ltd 面発光レーザ
US6965626B2 (en) * 2002-09-03 2005-11-15 Finisar Corporation Single mode VCSEL
US6813293B2 (en) * 2002-11-21 2004-11-02 Finisar Corporation Long wavelength VCSEL with tunnel junction, and implant
US20040222363A1 (en) * 2003-05-07 2004-11-11 Honeywell International Inc. Connectorized optical component misalignment detection system
US20040247250A1 (en) * 2003-06-03 2004-12-09 Honeywell International Inc. Integrated sleeve pluggable package
US7298942B2 (en) 2003-06-06 2007-11-20 Finisar Corporation Pluggable optical optic system having a lens fiber stop
US7277461B2 (en) * 2003-06-27 2007-10-02 Finisar Corporation Dielectric VCSEL gain guide
US7054345B2 (en) 2003-06-27 2006-05-30 Finisar Corporation Enhanced lateral oxidation
US7075962B2 (en) * 2003-06-27 2006-07-11 Finisar Corporation VCSEL having thermal management
US6961489B2 (en) * 2003-06-30 2005-11-01 Finisar Corporation High speed optical system
US6953291B2 (en) * 2003-06-30 2005-10-11 Finisar Corporation Compact package design for vertical cavity surface emitting laser array to optical fiber cable connection
US7149383B2 (en) * 2003-06-30 2006-12-12 Finisar Corporation Optical system with reduced back reflection
US20060056762A1 (en) * 2003-07-02 2006-03-16 Honeywell International Inc. Lens optical coupler
US7210857B2 (en) * 2003-07-16 2007-05-01 Finisar Corporation Optical coupling system
US20050013542A1 (en) * 2003-07-16 2005-01-20 Honeywell International Inc. Coupler having reduction of reflections to light source
US20050013539A1 (en) * 2003-07-17 2005-01-20 Honeywell International Inc. Optical coupling system
US6887801B2 (en) * 2003-07-18 2005-05-03 Finisar Corporation Edge bead control method and apparatus
US7257141B2 (en) * 2003-07-23 2007-08-14 Palo Alto Research Center Incorporated Phase array oxide-confined VCSELs
JP2005086170A (ja) * 2003-09-11 2005-03-31 Seiko Epson Corp 面発光型半導体レーザおよびその製造方法
US7031363B2 (en) * 2003-10-29 2006-04-18 Finisar Corporation Long wavelength VCSEL device processing
US7829912B2 (en) * 2006-07-31 2010-11-09 Finisar Corporation Efficient carrier injection in a semiconductor device
US7596165B2 (en) * 2004-08-31 2009-09-29 Finisar Corporation Distributed Bragg Reflector for optoelectronic device
US7920612B2 (en) 2004-08-31 2011-04-05 Finisar Corporation Light emitting semiconductor device having an electrical confinement barrier near the active region
US7826506B2 (en) * 2004-10-01 2010-11-02 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
US7860137B2 (en) * 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
WO2006039341A2 (en) * 2004-10-01 2006-04-13 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
TWI268030B (en) * 2004-12-15 2006-12-01 Truelight Corp Semiconductor laser with dual-platform structure
TWI309439B (en) * 2006-09-05 2009-05-01 Ind Tech Res Inst Nitride semiconductor and method for forming the same
US8031752B1 (en) 2007-04-16 2011-10-04 Finisar Corporation VCSEL optimized for high speed data
US8989230B2 (en) 2009-02-20 2015-03-24 Vixar Method and apparatus including movable-mirror mems-tuned surface-emitting lasers
US9088134B2 (en) * 2011-07-27 2015-07-21 Vixar Inc. Method and apparatus including improved vertical-cavity surface-emitting lasers
EP2873124B1 (de) * 2012-07-11 2017-04-05 Koninklijke Philips N.V. Vcsel mit intrakavitären kontakten
CN105552190B (zh) * 2015-04-30 2018-10-09 美科米尚技术有限公司 微型发光二极管
CN105405943A (zh) * 2015-05-21 2016-03-16 美科米尚技术有限公司 微型发光二极管
JP6990499B2 (ja) * 2016-04-18 2022-01-12 スタンレー電気株式会社 垂直共振器型発光素子及び垂直共振型発光素子の製造方法
CN111370997B (zh) * 2020-03-13 2022-08-12 天津华慧芯科技集团有限公司 分布反馈式激光器的新型电流阻挡层结构
CN113314951B (zh) * 2021-06-11 2021-11-23 福建慧芯激光科技有限公司 一种vcsel芯片氧化实时监控方法及设备

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Also Published As

Publication number Publication date
DE69825800T2 (de) 2005-09-01
EP0985255B1 (de) 2003-05-07
EP1306943B1 (de) 2004-08-18
JP2001518236A (ja) 2001-10-09
DE69825800D1 (de) 2004-09-23
EP1306943A1 (de) 2003-05-02
JP3928883B2 (ja) 2007-06-13
DE69814379T2 (de) 2004-03-25
EP0985255A1 (de) 2000-03-15
JP2007053406A (ja) 2007-03-01
JP4700593B2 (ja) 2011-06-15
WO1998039824A1 (en) 1998-09-11
US5903588A (en) 1999-05-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FINISAR CORP.(N.D.GES.D.STAATES DELAWARE), SUNNYVA