DE69813374D1 - Halbleiterscheibe Poliervorrichtung mit Halterring - Google Patents

Halbleiterscheibe Poliervorrichtung mit Halterring

Info

Publication number
DE69813374D1
DE69813374D1 DE69813374T DE69813374T DE69813374D1 DE 69813374 D1 DE69813374 D1 DE 69813374D1 DE 69813374 T DE69813374 T DE 69813374T DE 69813374 T DE69813374 T DE 69813374T DE 69813374 D1 DE69813374 D1 DE 69813374D1
Authority
DE
Germany
Prior art keywords
semiconductor wafer
polishing device
wafer polishing
holder ring
holder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69813374T
Other languages
English (en)
Other versions
DE69813374T2 (de
Inventor
Takao Inaba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Seimitsu Co Ltd
Original Assignee
Tokyo Seimitsu Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Seimitsu Co Ltd filed Critical Tokyo Seimitsu Co Ltd
Publication of DE69813374D1 publication Critical patent/DE69813374D1/de
Application granted granted Critical
Publication of DE69813374T2 publication Critical patent/DE69813374T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B24B37/32—Retaining rings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
DE69813374T 1997-05-28 1998-05-26 Halbleiterscheibe Poliervorrichtung mit Halterring Expired - Fee Related DE69813374T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13892697 1997-05-28

Publications (2)

Publication Number Publication Date
DE69813374D1 true DE69813374D1 (de) 2003-05-22
DE69813374T2 DE69813374T2 (de) 2003-10-23

Family

ID=15233374

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69813374T Expired - Fee Related DE69813374T2 (de) 1997-05-28 1998-05-26 Halbleiterscheibe Poliervorrichtung mit Halterring

Country Status (6)

Country Link
US (2) US6033292A (de)
EP (1) EP0881039B1 (de)
KR (1) KR100279352B1 (de)
DE (1) DE69813374T2 (de)
MY (1) MY118554A (de)
TW (1) TW374038B (de)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0890416A3 (de) * 1997-07-11 2002-09-11 Tokyo Seimitsu Co.,Ltd. Halbleiterscheiben Poliervorrichtung
JP2973403B2 (ja) * 1998-03-30 1999-11-08 株式会社東京精密 ウェーハ研磨装置
JPH11285966A (ja) * 1998-04-02 1999-10-19 Speedfam-Ipec Co Ltd キャリア及びｃｍｐ装置
US6220930B1 (en) * 1998-11-03 2001-04-24 United Microelectronics Corp. Wafer polishing head
US6435956B1 (en) * 1999-02-02 2002-08-20 Ebara Corporation Wafer holder and polishing device
US6276998B1 (en) * 1999-02-25 2001-08-21 Applied Materials, Inc. Padless substrate carrier
US6645050B1 (en) 1999-02-25 2003-11-11 Applied Materials, Inc. Multimode substrate carrier
US6368189B1 (en) * 1999-03-03 2002-04-09 Mitsubishi Materials Corporation Apparatus and method for chemical-mechanical polishing (CMP) head having direct pneumatic wafer polishing pressure
US6231428B1 (en) * 1999-03-03 2001-05-15 Mitsubishi Materials Corporation Chemical mechanical polishing head assembly having floating wafer carrier and retaining ring
US20020173242A1 (en) * 1999-04-19 2002-11-21 Mitsubishi Materials Corporation Chemical mechanical polishing head assembly having floating wafer carrier and retaining ring
JP3068086B1 (ja) * 1999-05-07 2000-07-24 株式会社東京精密 ウェ―ハ研磨装置
JP3085948B1 (ja) * 1999-05-10 2000-09-11 株式会社東京精密 ウェーハ研磨装置
AU4136400A (en) * 1999-07-28 2001-02-13 Mitsubishi Materials Corporation Cmp polishing head with three chambers and method for using the same
US6206768B1 (en) * 1999-07-29 2001-03-27 Chartered Semiconductor Manufacturing, Ltd. Adjustable and extended guide rings
SG90746A1 (en) * 1999-10-15 2002-08-20 Ebara Corp Apparatus and method for polishing workpiece
JP2005520357A (ja) * 2000-03-31 2005-07-07 スピードファム−アイピーイーシー コーポレイション 半導体ウェハを研磨するためのマルチボリューム隔壁を有するキャリヤと研磨方法
US6558232B1 (en) 2000-05-12 2003-05-06 Multi-Planar Technologies, Inc. System and method for CMP having multi-pressure zone loading for improved edge and annular zone material removal control
US6506105B1 (en) 2000-05-12 2003-01-14 Multi-Planar Technologies, Inc. System and method for pneumatic diaphragm CMP head having separate retaining ring and multi-region wafer pressure control
KR20010109025A (ko) * 2000-06-01 2001-12-08 서두칠 패널연마장치용 연마툴
US6527625B1 (en) 2000-08-31 2003-03-04 Multi-Planar Technologies, Inc. Chemical mechanical polishing apparatus and method having a soft backed polishing head
US6540590B1 (en) 2000-08-31 2003-04-01 Multi-Planar Technologies, Inc. Chemical mechanical polishing apparatus and method having a rotating retaining ring
US6652362B2 (en) * 2000-11-23 2003-11-25 Samsung Electronics Co., Ltd. Apparatus for polishing a semiconductor wafer and method therefor
US6607425B1 (en) 2000-12-21 2003-08-19 Lam Research Corporation Pressurized membrane platen design for improving performance in CMP applications
US6776695B2 (en) * 2000-12-21 2004-08-17 Lam Research Corporation Platen design for improving edge performance in CMP applications
DE60101458T2 (de) 2001-05-25 2004-10-28 Infineon Technologies Ag Halbleitersubstrathalter mit bewegbarer Platte für das chemisch-mechanische Polierverfahren
KR100437456B1 (ko) * 2001-05-31 2004-06-23 삼성전자주식회사 화학적 기계적 평탄화 기계의 폴리싱 헤드 및 그것을이용한 폴리싱방법
US6769973B2 (en) * 2001-05-31 2004-08-03 Samsung Electronics Co., Ltd. Polishing head of chemical mechanical polishing apparatus and polishing method using the same
JP2003151933A (ja) * 2001-11-19 2003-05-23 Tokyo Seimitsu Co Ltd ウェーハ研磨装置
KR100416808B1 (ko) * 2002-02-04 2004-01-31 삼성전자주식회사 반도체소자 제조용 씨엠피장치의 연마헤드 및 이를 구비한씨엠피장치
JP2004160573A (ja) * 2002-11-11 2004-06-10 Ebara Corp 研磨装置
US20060180486A1 (en) * 2003-04-21 2006-08-17 Bennett David W Modular panel and storage system for flat items such as media discs and holders therefor
US7008309B2 (en) * 2003-05-30 2006-03-07 Strasbaugh Back pressure control system for CMP and wafer polishing
US7018273B1 (en) 2003-06-27 2006-03-28 Lam Research Corporation Platen with diaphragm and method for optimizing wafer polishing
JP2005034959A (ja) * 2003-07-16 2005-02-10 Ebara Corp 研磨装置及びリテーナリング
KR100586018B1 (ko) * 2004-02-09 2006-06-01 삼성전자주식회사 연마 헤드용 플렉서블 멤브레인 및 이를 포함하는 연마 장치
US7033252B2 (en) 2004-03-05 2006-04-25 Strasbaugh Wafer carrier with pressurized membrane and retaining ring actuator
US6955588B1 (en) 2004-03-31 2005-10-18 Lam Research Corporation Method of and platen for controlling removal rate characteristics in chemical mechanical planarization
US7048621B2 (en) * 2004-10-27 2006-05-23 Applied Materials Inc. Retaining ring deflection control
EP3043377A1 (de) * 2004-11-01 2016-07-13 Ebara Corporation Poliervorrichtung
US7101272B2 (en) * 2005-01-15 2006-09-05 Applied Materials, Inc. Carrier head for thermal drift compensation
JP4756884B2 (ja) * 2005-03-14 2011-08-24 信越半導体株式会社 半導体ウエーハ用の研磨ヘッド及び研磨装置並びに研磨方法
DE102009030298B4 (de) 2009-06-24 2012-07-12 Siltronic Ag Verfahren zur lokalen Politur einer Halbleiterscheibe
JP5392483B2 (ja) * 2009-08-31 2014-01-22 不二越機械工業株式会社 研磨装置
DE102009051007B4 (de) * 2009-10-28 2011-12-22 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
KR101814185B1 (ko) 2010-08-06 2018-01-02 어플라이드 머티어리얼스, 인코포레이티드 유지 링에 의한 기판 엣지 튜닝
JP5807580B2 (ja) * 2012-02-15 2015-11-10 信越半導体株式会社 研磨ヘッド及び研磨装置
JP2015196224A (ja) * 2014-04-01 2015-11-09 株式会社フジミインコーポレーテッド 研磨方法、及び保持具
US10510563B2 (en) * 2016-04-15 2019-12-17 Taiwan Semiconductor Manufacturing Company Ltd. Wafer carrier assembly
JP6713377B2 (ja) * 2016-08-10 2020-06-24 エイブリック株式会社 研磨ヘッド、研磨ヘッドを有するｃｍｐ研磨装置およびそれを用いた半導体集積回路装置の製造方法
US11344991B2 (en) 2019-02-28 2022-05-31 Applied Materials, Inc. Retainer for chemical mechanical polishing carrier head
KR20210061273A (ko) * 2019-11-19 2021-05-27 가부시키가이샤 에바라 세이사꾸쇼 기판을 보유 지지하기 위한 톱링 및 기판 처리 장치

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4521995A (en) * 1980-05-23 1985-06-11 Disco Co., Ltd. Wafer attracting and fixing device
US5036630A (en) * 1990-04-13 1991-08-06 International Business Machines Corporation Radial uniformity control of semiconductor wafer polishing
JP3024373B2 (ja) * 1992-07-07 2000-03-21 信越半導体株式会社 シート状弾性発泡体及びウェーハ研磨加工用治具
US5635083A (en) * 1993-08-06 1997-06-03 Intel Corporation Method and apparatus for chemical-mechanical polishing using pneumatic pressure applied to the backside of a substrate
JP3042293B2 (ja) * 1994-02-18 2000-05-15 信越半導体株式会社 ウエーハのポリッシング装置
JP3158934B2 (ja) * 1995-02-28 2001-04-23 三菱マテリアル株式会社 ウェーハ研磨装置
US6024630A (en) * 1995-06-09 2000-02-15 Applied Materials, Inc. Fluid-pressure regulated wafer polishing head
US5643061A (en) * 1995-07-20 1997-07-01 Integrated Process Equipment Corporation Pneumatic polishing head for CMP apparatus
EP0786310B1 (de) * 1996-01-24 2002-12-04 Lam Research Corporation Halbleiterscheiben-Polierkopf
JP3106418B2 (ja) * 1996-07-30 2000-11-06 株式会社東京精密 研磨装置

Also Published As

Publication number Publication date
EP0881039A2 (de) 1998-12-02
KR19980087423A (ko) 1998-12-05
MY118554A (en) 2004-12-31
TW374038B (en) 1999-11-11
DE69813374T2 (de) 2003-10-23
EP0881039A3 (de) 2000-12-20
EP0881039B1 (de) 2003-04-16
KR100279352B1 (ko) 2001-01-15
US6033292A (en) 2000-03-07
US6196905B1 (en) 2001-03-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee