DE69734068D1 - Halbleiter-bildaufnahmevorrichtung mit höckerbond - Google Patents

Halbleiter-bildaufnahmevorrichtung mit höckerbond

Info

Publication number
DE69734068D1
DE69734068D1 DE69734068T DE69734068T DE69734068D1 DE 69734068 D1 DE69734068 D1 DE 69734068D1 DE 69734068 T DE69734068 T DE 69734068T DE 69734068 T DE69734068 T DE 69734068T DE 69734068 D1 DE69734068 D1 DE 69734068D1
Authority
DE
Germany
Prior art keywords
low temperature
solder
höckerbond
recording device
picture recording
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69734068T
Other languages
English (en)
Other versions
DE69734068T2 (de
Inventor
Konstantinos Evange Spartiotis
Jakko Salonen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IPL Intellectual Property Licensing Ltd
Original Assignee
Goldpower Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Goldpower Ltd filed Critical Goldpower Ltd
Publication of DE69734068D1 publication Critical patent/DE69734068D1/de
Application granted granted Critical
Publication of DE69734068T2 publication Critical patent/DE69734068T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/1469—Assemblies, i.e. hybrid integration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13109—Indium [In] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Toxicology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Wire Bonding (AREA)
  • Light Receiving Elements (AREA)
  • Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
  • Facsimile Heads (AREA)
DE69734068T 1996-12-27 1997-12-19 Halbleiter-bildaufnahmevorrichtung mit höckerbond Expired - Lifetime DE69734068T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9626972 1996-12-27
GB9626972A GB2319394B (en) 1996-12-27 1996-12-27 Bump-bonded semiconductor imaging device
PCT/EP1997/007279 WO1998029904A1 (en) 1996-12-27 1997-12-19 Bump-bonded semiconductor imaging device

Publications (2)

Publication Number Publication Date
DE69734068D1 true DE69734068D1 (de) 2005-09-29
DE69734068T2 DE69734068T2 (de) 2006-06-22

Family

ID=10805074

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69734068T Expired - Lifetime DE69734068T2 (de) 1996-12-27 1997-12-19 Halbleiter-bildaufnahmevorrichtung mit höckerbond

Country Status (12)

Country Link
US (1) US5952646A (de)
EP (1) EP0948810B1 (de)
JP (1) JP2001507519A (de)
CN (1) CN1127757C (de)
AT (1) ATE302996T1 (de)
AU (1) AU6091598A (de)
CA (1) CA2273356C (de)
DE (1) DE69734068T2 (de)
GB (1) GB2319394B (de)
HK (1) HK1009182A1 (de)
IL (1) IL130594A (de)
WO (1) WO1998029904A1 (de)

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GB2332800B (en) * 1997-12-18 2000-09-27 Simage Oy Device for imaging radiation
US6175611B1 (en) * 1998-10-06 2001-01-16 Cardiac Mariners, Inc. Tiered detector assembly
US6303923B1 (en) * 1998-12-18 2001-10-16 California Institute Of Technology Fabricating a hybrid imaging device having non-destructive sense nodes
FR2791469B1 (fr) * 1999-03-23 2001-04-13 Commissariat Energie Atomique Dispositif d'imagerie de rayonnement x et procede de realisation d'un tel dispositif
US6797960B1 (en) 1999-04-26 2004-09-28 Simage Oy Self triggered imaging device for imaging radiation
US6809769B1 (en) * 2000-06-22 2004-10-26 Pixim, Inc. Designs of digital pixel sensors
JP2002261262A (ja) * 2001-03-01 2002-09-13 Mitsubishi Heavy Ind Ltd イメージセンサ及びその製造方法
US7189971B2 (en) * 2002-02-15 2007-03-13 Oy Ajat Ltd Radiation imaging device and system
US6933505B2 (en) * 2002-03-13 2005-08-23 Oy Ajat Ltd Low temperature, bump-bonded radiation imaging device
US7361881B2 (en) * 2002-03-13 2008-04-22 Oy Ajat Ltd Ganged detector pixel, photon/pulse counting radiation imaging device
US7170062B2 (en) * 2002-03-29 2007-01-30 Oy Ajat Ltd. Conductive adhesive bonded semiconductor substrates for radiation imaging devices
US7223981B1 (en) * 2002-12-04 2007-05-29 Aguila Technologies Inc. Gamma ray detector modules
CN100411218C (zh) * 2003-03-07 2008-08-13 铼宝科技股份有限公司 有机电激发光面板的制程及其封装制程
US7470912B2 (en) * 2004-02-09 2008-12-30 Standard Imaging, Inc. Wire-free, dual-mode calibration instrument for high energy therapeutic radiation
JP2005274560A (ja) * 2004-02-27 2005-10-06 Fuji Electric Holdings Co Ltd 放射線検出器用フィルタの実装方法
TW200611350A (en) * 2004-09-21 2006-04-01 Advanced Semiconductor Eng Sensitive flip-chip bonding structure
US7105920B2 (en) * 2004-11-12 2006-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate design to improve chip package reliability
TWI429066B (zh) 2005-06-02 2014-03-01 Sony Corp Semiconductor image sensor module and manufacturing method thereof
JP2007228460A (ja) * 2006-02-27 2007-09-06 Mitsumasa Koyanagi 集積センサを搭載した積層型半導体装置
US7592593B2 (en) * 2006-07-26 2009-09-22 Northrop Grumman Corporation Multi-band focal plane array
EP2034718A1 (de) * 2007-09-05 2009-03-11 THOMSON Licensing System und Verfahren zur Ausrichtung und Befestigung eines Bildsensors an einem Strahlteiler
CN101903802B (zh) * 2007-12-20 2013-09-11 皇家飞利浦电子股份有限公司 直接转换探测器
US7965329B2 (en) 2008-09-09 2011-06-21 Omnivision Technologies, Inc. High gain read circuit for 3D integrated pixel
WO2012086648A1 (ja) 2010-12-21 2012-06-28 株式会社テレシステムズ 放射線検出器、及び、この検出器を備えた放射線撮像装置
CN103107104A (zh) * 2011-11-11 2013-05-15 北京大学深圳研究生院 一种倒装芯片的制作方法
US20150276945A1 (en) 2014-03-25 2015-10-01 Oy Ajat Ltd. Semiconductor bump-bonded x-ray imaging device
CN107076858A (zh) * 2015-05-26 2017-08-18 西门子医疗有限公司 辐射检测器设备
JP6730424B2 (ja) 2016-03-31 2020-07-29 株式会社ジョブ Ｘ線検出システム、ｘ線装置、並びに、ｘ線検出データを処理する装置及び方法
US10813607B2 (en) * 2018-06-27 2020-10-27 Prismatic Sensors Ab X-ray sensor, method for constructing an x-ray sensor and an x-ray imaging system comprising such an x-ray sensor
CN118412389A (zh) * 2024-07-01 2024-07-30 陕西迪泰克新材料有限公司 用于碲锌镉晶体/碲化镉晶体的焊接电极结构及制备方法

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GB8522429D0 (en) * 1985-09-10 1985-10-16 Plessey Co Plc Alignment for hybrid device
US5220170A (en) * 1985-12-11 1993-06-15 General Imaging Corporation X-ray imaging system and solid state detector therefor
US5043582A (en) * 1985-12-11 1991-08-27 General Imagining Corporation X-ray imaging system and solid state detector therefor
JPS63284485A (ja) * 1987-05-15 1988-11-21 Shimadzu Corp 放射線像受像装置
US4912545A (en) * 1987-09-16 1990-03-27 Irvine Sensors Corporation Bonding of aligned conductive bumps on adjacent surfaces
EP0415541B1 (de) * 1989-07-29 1994-10-05 Shimadzu Corporation Halbleiterstrahlungsbilddetektor und sein Herstellungsverfahren
US5245191A (en) * 1992-04-14 1993-09-14 The Board Of Regents Of The University Of Arizona Semiconductor sensor for gamma-ray tomographic imaging system
CA2095366C (en) * 1992-05-21 1999-09-14 Timothy C. Collins Hybridized semiconductor pixel detector arrays for use in digital radiography
FR2693033B1 (fr) * 1992-06-30 1994-08-19 Commissariat Energie Atomique Dispositif d'imagerie de grande dimension.
JPH06168385A (ja) * 1992-11-30 1994-06-14 Matsushita Electric Works Ltd 火災感知器
US5619040A (en) * 1994-03-29 1997-04-08 Shapiro; Stephen L. Data acquisition system
JP3348528B2 (ja) * 1994-07-20 2002-11-20 富士通株式会社 半導体装置の製造方法と半導体装置及び電子回路装置の製造方法と電子回路装置
JPH0936410A (ja) * 1995-07-24 1997-02-07 Shimadzu Corp 半導体放射線検出素子
JPH0983007A (ja) * 1995-09-12 1997-03-28 Shimadzu Corp 半導体放射線検出素子

Also Published As

Publication number Publication date
IL130594A (en) 2002-08-14
CA2273356A1 (en) 1998-07-09
CN1127757C (zh) 2003-11-12
CA2273356C (en) 2002-10-01
WO1998029904A1 (en) 1998-07-09
US5952646A (en) 1999-09-14
ATE302996T1 (de) 2005-09-15
GB2319394B (en) 1998-10-28
HK1009182A1 (en) 1999-05-28
AU6091598A (en) 1998-07-31
EP0948810B1 (de) 2005-08-24
DE69734068T2 (de) 2006-06-22
EP0948810A1 (de) 1999-10-13
GB9626972D0 (en) 1997-02-19
IL130594A0 (en) 2000-06-01
CN1242106A (zh) 2000-01-19
GB2319394A (en) 1998-05-20
JP2001507519A (ja) 2001-06-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: IPL INTELLECTUAL PROPERTY LICENSING LTD., LIMA, CY