DE60322061D1 - Tieftemperatur-strahlungsbildaufnahmevorrichtung mit höcker-bondverbindung - Google Patents
Tieftemperatur-strahlungsbildaufnahmevorrichtung mit höcker-bondverbindungInfo
- Publication number
- DE60322061D1 DE60322061D1 DE60322061T DE60322061T DE60322061D1 DE 60322061 D1 DE60322061 D1 DE 60322061D1 DE 60322061 T DE60322061 T DE 60322061T DE 60322061 T DE60322061 T DE 60322061T DE 60322061 D1 DE60322061 D1 DE 60322061D1
- Authority
- DE
- Germany
- Prior art keywords
- höcker
- temperature
- recording device
- image recording
- radiation image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005855 radiation Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 3
- 229910000679 solder Inorganic materials 0.000 abstract 3
- 229910045601 alloy Inorganic materials 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 2
- 238000003384 imaging method Methods 0.000 abstract 2
- 229910004613 CdTe Inorganic materials 0.000 abstract 1
- 229910004611 CdZnTe Inorganic materials 0.000 abstract 1
- 230000005251 gamma ray Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 150000003498 tellurium compounds Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14661—X-ray, gamma-ray or corpuscular radiation imagers of the hybrid type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
- Wire Bonding (AREA)
- Radiation Pyrometers (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US36424902P | 2002-03-13 | 2002-03-13 | |
US10/126,254 US6933505B2 (en) | 2002-03-13 | 2002-04-19 | Low temperature, bump-bonded radiation imaging device |
PCT/IB2003/001510 WO2003077319A2 (en) | 2002-03-13 | 2003-03-12 | Low temperature, bump-bonded radiation imaging device |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60322061D1 true DE60322061D1 (de) | 2008-08-21 |
Family
ID=27807310
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60322061T Expired - Lifetime DE60322061D1 (de) | 2002-03-13 | 2003-03-12 | Tieftemperatur-strahlungsbildaufnahmevorrichtung mit höcker-bondverbindung |
Country Status (8)
Country | Link |
---|---|
US (1) | US6933505B2 (de) |
EP (1) | EP1520300B1 (de) |
AT (1) | ATE400895T1 (de) |
AU (1) | AU2003216662A1 (de) |
DE (1) | DE60322061D1 (de) |
DK (1) | DK1520300T3 (de) |
ES (1) | ES2309308T3 (de) |
WO (1) | WO2003077319A2 (de) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7361881B2 (en) * | 2002-03-13 | 2008-04-22 | Oy Ajat Ltd | Ganged detector pixel, photon/pulse counting radiation imaging device |
US20040232535A1 (en) * | 2003-05-22 | 2004-11-25 | Terry Tarn | Microelectromechanical device packages with integral heaters |
JP2005012049A (ja) * | 2003-06-20 | 2005-01-13 | Shimadzu Corp | 放射線検出器およびそれを備えた放射線撮像装置 |
US20060011853A1 (en) * | 2004-07-06 | 2006-01-19 | Konstantinos Spartiotis | High energy, real time capable, direct radiation conversion X-ray imaging system for Cd-Te and Cd-Zn-Te based cameras |
WO2006018804A1 (en) * | 2004-08-20 | 2006-02-23 | Philips Intellectual Property & Standards Gmbh | Microelectronic system with a passivation layer |
US7187066B2 (en) * | 2004-09-22 | 2007-03-06 | Intel Corporation | Radiant energy heating for die attach |
JP4479577B2 (ja) * | 2005-04-28 | 2010-06-09 | 株式会社日立製作所 | 半導体装置 |
US8295432B2 (en) | 2005-05-02 | 2012-10-23 | Oy Ajat Ltd | Radiation imaging device with irregular rectangular shape and extraoral dental imaging system therefrom |
US7742560B2 (en) | 2005-05-02 | 2010-06-22 | Oy Ajat Ltd. | Radiation imaging device with irregular rectangular shape and extraoral dental imaging system therefrom |
US7676022B2 (en) | 2005-05-02 | 2010-03-09 | Oy Ajat Ltd. | Extra-oral digital panoramic dental x-ray imaging system |
US7336763B2 (en) | 2005-05-02 | 2008-02-26 | Oy Ajat Ltd | Dental extra-oral x-ray imaging system and method |
US9332950B2 (en) | 2005-05-02 | 2016-05-10 | Oy Ajat Ltd. | Radiation imaging device with irregular rectangular shape and extraoral dental imaging system therefrom |
DE102005051330B4 (de) * | 2005-10-25 | 2015-04-02 | Infineon Technologies Ag | Verfahren zum Herstellen und Reinigen von oberflächenmontierbaren Außenkontaktsockeln |
CA2541256A1 (en) * | 2006-02-22 | 2007-08-22 | Redlen Technologies Inc. | Shielding electrode for monolithic radiation detector |
US7589324B2 (en) * | 2006-12-21 | 2009-09-15 | Redlen Technologies | Use of solder mask as a protective coating for radiation detector |
CN101903802B (zh) * | 2007-12-20 | 2013-09-11 | 皇家飞利浦电子股份有限公司 | 直接转换探测器 |
DE102008012604B4 (de) | 2008-03-05 | 2017-10-12 | Siemens Healthcare Gmbh | Detektormodul, Röntgendetektor und Verfahren zum Aufbau eines Röntgendetektors |
US7715525B2 (en) | 2008-03-13 | 2010-05-11 | Oy Ajat Limited | Single sensor multi-functional dental extra-oral x-ray imaging system and method |
US7715526B2 (en) | 2008-03-13 | 2010-05-11 | Oy Ajat Limited | Single sensor multi-functional dental extra-oral x-ray imaging system and method |
DE102008020924A1 (de) | 2008-04-25 | 2009-11-05 | Siemens Aktiengesellschaft | Modul mit Niedertemperatur-Lötverbindung und dazugehöriges Verfahren zur Herstellung |
DE102008048044B4 (de) * | 2008-09-19 | 2012-06-14 | Siemens Aktiengesellschaft | Herstellungsverfahren für einen Strahlungswandler, sowie Strahlungsdetektormodul, Strahlungsdetektor und Tomografiegerät |
DE102008050840A1 (de) | 2008-10-08 | 2009-10-15 | Siemens Aktiengesellschaft | Verfahren zur Fertigung eines elektrischen Moduls, elektrisches Modul, Röntgenmesssystem sowie Computertomograh |
DE102008050838A1 (de) | 2008-10-08 | 2009-10-15 | Siemens Aktiengesellschaft | Elektrische Baugruppe, Röntgenmesssystem, Computertomograph sowie Verfahren zur Fertigung einer elektrischen Baugruppe |
WO2010126445A1 (en) | 2009-04-29 | 2010-11-04 | Xcounter Ab | Computed tomography scanning system |
US8476101B2 (en) * | 2009-12-28 | 2013-07-02 | Redlen Technologies | Method of fabricating patterned CZT and CdTe devices |
DE102010011582B4 (de) * | 2010-03-16 | 2011-12-01 | Siemens Aktiengesellschaft | Detektormodul für einen Strahlendetektor und Strahlendetektor |
US20120009394A1 (en) * | 2010-07-07 | 2012-01-12 | MOS Art Pack Corporation | Bonding method and bonding substrate |
EP2407109B1 (de) | 2010-07-14 | 2016-01-06 | XCounter AB | Computertomografie-Abtastsystem und Verfahren |
JP6234074B2 (ja) * | 2013-06-07 | 2017-11-22 | オリンパス株式会社 | 半導体装置、固体撮像装置、および撮像装置 |
US20150276945A1 (en) | 2014-03-25 | 2015-10-01 | Oy Ajat Ltd. | Semiconductor bump-bonded x-ray imaging device |
DE102014213734B4 (de) | 2014-07-15 | 2021-01-21 | Siemens Healthcare Gmbh | Bildgebende Vorrichtung für elektromagnetische Strahlung |
CN107003417B (zh) * | 2014-10-20 | 2019-06-21 | 模拟技术公司 | 用于辐射成像模态装置的探测器阵列的探测器单元 |
CN107076858A (zh) * | 2015-05-26 | 2017-08-18 | 西门子医疗有限公司 | 辐射检测器设备 |
US10483316B2 (en) * | 2016-01-13 | 2019-11-19 | mPower Technology, Inc. | Fabrication and operation of multi-function flexible radiation detection systems |
EP3552242B1 (de) | 2016-12-09 | 2021-07-07 | mPower Technology, Inc. | Hochleistungsfähige solarzellen, arrays und herstellungsverfahren dafür |
US10914848B1 (en) | 2018-07-13 | 2021-02-09 | mPower Technology, Inc. | Fabrication, integration and operation of multi-function radiation detection systems |
WO2020028402A1 (en) | 2018-07-30 | 2020-02-06 | mPower Technology, Inc. | In-situ rapid annealing and operation of solar cells for extreme environment applications |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5269453A (en) * | 1992-04-02 | 1993-12-14 | Motorola, Inc. | Low temperature method for forming solder bump interconnections to a plated circuit trace |
US5316205A (en) * | 1993-04-05 | 1994-05-31 | Motorola, Inc. | Method for forming gold bump connection using tin-bismuth solder |
US5619040A (en) * | 1994-03-29 | 1997-04-08 | Shapiro; Stephen L. | Data acquisition system |
US5730932A (en) * | 1996-03-06 | 1998-03-24 | International Business Machines Corporation | Lead-free, tin-based multi-component solder alloys |
JPH09326554A (ja) | 1996-06-06 | 1997-12-16 | Matsushita Electric Ind Co Ltd | 電子部品接合用電極のはんだ合金及びはんだ付け方法 |
GB2319394B (en) | 1996-12-27 | 1998-10-28 | Simage Oy | Bump-bonded semiconductor imaging device |
US6207944B1 (en) * | 1997-02-18 | 2001-03-27 | Simage, O.Y. | Semiconductor imaging device |
US6238599B1 (en) * | 1997-06-18 | 2001-05-29 | International Business Machines Corporation | High conductivity, high strength, lead-free, low cost, electrically conducting materials and applications |
JP2000197988A (ja) | 1998-03-26 | 2000-07-18 | Nihon Superior Co Ltd | 無鉛はんだ合金 |
US6742701B2 (en) * | 1998-09-17 | 2004-06-01 | Kabushiki Kaisha Tamura Seisakusho | Bump forming method, presoldering treatment method, soldering method, bump forming apparatus, presoldering treatment device and soldering apparatus |
US6365097B1 (en) * | 1999-01-29 | 2002-04-02 | Fuji Electric Co., Ltd. | Solder alloy |
KR20010072364A (ko) | 1999-06-11 | 2001-07-31 | 이즈하라 요조 | 무연 땜납 |
JP3514670B2 (ja) | 1999-07-29 | 2004-03-31 | 松下電器産業株式会社 | 半田付け方法 |
GB2354369A (en) * | 1999-09-17 | 2001-03-21 | Secr Defence | Noise reduced semiconductor photon detectors |
US6638847B1 (en) * | 2000-04-19 | 2003-10-28 | Advanced Interconnect Technology Ltd. | Method of forming lead-free bump interconnections |
KR100398716B1 (ko) * | 2000-06-12 | 2003-09-19 | 가부시키가이샤 히타치세이사쿠쇼 | 반도체 모듈 및 반도체 장치를 접속한 회로 기판 |
-
2002
- 2002-04-19 US US10/126,254 patent/US6933505B2/en not_active Expired - Lifetime
-
2003
- 2003-03-12 EP EP03712573A patent/EP1520300B1/de not_active Expired - Lifetime
- 2003-03-12 AT AT03712573T patent/ATE400895T1/de not_active IP Right Cessation
- 2003-03-12 AU AU2003216662A patent/AU2003216662A1/en not_active Abandoned
- 2003-03-12 DK DK03712573T patent/DK1520300T3/da active
- 2003-03-12 WO PCT/IB2003/001510 patent/WO2003077319A2/en active IP Right Grant
- 2003-03-12 ES ES03712573T patent/ES2309308T3/es not_active Expired - Lifetime
- 2003-03-12 DE DE60322061T patent/DE60322061D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
ATE400895T1 (de) | 2008-07-15 |
DK1520300T3 (da) | 2008-10-27 |
WO2003077319A2 (en) | 2003-09-18 |
ES2309308T3 (es) | 2008-12-16 |
AU2003216662A1 (en) | 2003-09-22 |
US6933505B2 (en) | 2005-08-23 |
EP1520300B1 (de) | 2008-07-09 |
US20030173523A1 (en) | 2003-09-18 |
WO2003077319A3 (en) | 2004-06-03 |
EP1520300A2 (de) | 2005-04-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |