DE69716218T2 - Härtbare Harzzusammensetzung und gehärtete Produkte - Google Patents

Härtbare Harzzusammensetzung und gehärtete Produkte

Info

Publication number
DE69716218T2
DE69716218T2 DE69716218T DE69716218T DE69716218T2 DE 69716218 T2 DE69716218 T2 DE 69716218T2 DE 69716218 T DE69716218 T DE 69716218T DE 69716218 T DE69716218 T DE 69716218T DE 69716218 T2 DE69716218 T2 DE 69716218T2
Authority
DE
Germany
Prior art keywords
resin composition
curable resin
hardened products
hardened
products
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69716218T
Other languages
English (en)
Other versions
DE69716218D1 (de
Inventor
Takahiko Kurosawa
Kinji Yamada
Minoru Matsubara
Yasutake Inoue
Tomotaka Shinoda
Kouhei Gotou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP32336196A external-priority patent/JP3671560B2/ja
Application filed by JSR Corp filed Critical JSR Corp
Publication of DE69716218D1 publication Critical patent/DE69716218D1/de
Application granted granted Critical
Publication of DE69716218T2 publication Critical patent/DE69716218T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/42—Block-or graft-polymers containing polysiloxane sequences
    • C08G77/452—Block-or graft-polymers containing polysiloxane sequences containing nitrogen-containing sequences
    • C08G77/455—Block-or graft-polymers containing polysiloxane sequences containing nitrogen-containing sequences containing polyamide, polyesteramide or polyimide sequences
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C08K5/541—Silicon-containing compounds containing oxygen
    • C08K5/5415—Silicon-containing compounds containing oxygen containing at least one Si—O bond
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/10—Block or graft copolymers containing polysiloxane sequences
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
DE69716218T 1996-11-20 1997-11-20 Härtbare Harzzusammensetzung und gehärtete Produkte Expired - Lifetime DE69716218T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP32336196A JP3671560B2 (ja) 1996-11-20 1996-11-20 熱硬化性樹脂組成物の製造方法
JP32795096 1996-11-22

Publications (2)

Publication Number Publication Date
DE69716218D1 DE69716218D1 (de) 2002-11-14
DE69716218T2 true DE69716218T2 (de) 2003-04-17

Family

ID=26571154

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69716218T Expired - Lifetime DE69716218T2 (de) 1996-11-20 1997-11-20 Härtbare Harzzusammensetzung und gehärtete Produkte

Country Status (4)

Country Link
US (2) US6011123A (de)
EP (1) EP0844283B1 (de)
DE (1) DE69716218T2 (de)
TW (1) TW438860B (de)

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JP4096138B2 (ja) * 1999-04-12 2008-06-04 Ｊｓｒ株式会社 レジスト下層膜用組成物の製造方法
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US6824879B2 (en) * 1999-06-10 2004-11-30 Honeywell International Inc. Spin-on-glass anti-reflective coatings for photolithography
US6284391B1 (en) * 1999-07-12 2001-09-04 Corning Incorporated Mercaptofunctional silanes to deposit sol-gel coatings on metals
EP1094506A3 (de) 1999-10-18 2004-03-03 Applied Materials, Inc. Schutzschicht für Filme mit besonders kleiner Dielektrizitätskonstante
US6875687B1 (en) 1999-10-18 2005-04-05 Applied Materials, Inc. Capping layer for extreme low dielectric constant films
US6576568B2 (en) 2000-04-04 2003-06-10 Applied Materials, Inc. Ionic additives for extreme low dielectric constant chemical formulations
US7265062B2 (en) * 2000-04-04 2007-09-04 Applied Materials, Inc. Ionic additives for extreme low dielectric constant chemical formulations
JP2001288362A (ja) * 2000-04-05 2001-10-16 Hitachi Ltd 耐熱性樹脂組成物及びその製造方法
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US20030054616A1 (en) * 2001-08-29 2003-03-20 Honeywell International Inc. Electronic devices and methods of manufacture
US6958300B2 (en) * 2002-08-28 2005-10-25 Micron Technology, Inc. Systems and methods for forming metal oxides using metal organo-amines and metal organo-oxides
US7112485B2 (en) 2002-08-28 2006-09-26 Micron Technology, Inc. Systems and methods for forming zirconium and/or hafnium-containing layers
US7041609B2 (en) * 2002-08-28 2006-05-09 Micron Technology, Inc. Systems and methods for forming metal oxides using alcohols
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US20040171743A1 (en) * 2003-01-21 2004-09-02 Terry Brewer, Ph.D. Hybrid organic-inorganic polymer coatings with high refractive indices
TWI296569B (en) * 2003-08-27 2008-05-11 Mitsui Chemicals Inc Polyimide metal laminated matter
KR20070001070A (ko) * 2003-10-31 2007-01-03 제이에스알 가부시끼가이샤 적층체 및 그의 형성 방법, 절연막, 반도체 장치, 및 막형성용 조성물
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
JP2005209861A (ja) * 2004-01-22 2005-08-04 Nippon Steel Corp ウェハレベルパッケージ及びその製造方法
TWI298076B (en) * 2004-04-30 2008-06-21 Eternal Chemical Co Ltd Precursor solution for polyimide/silica composite material, its manufacture method and polyimide/silica composite material having low volume shrinkage
FR2874615B1 (fr) * 2004-08-30 2006-10-27 Nexans Sa Composition de vernis d'emaillage notamment pour fil de bobinage
EP1632956A1 (de) * 2004-09-07 2006-03-08 Rohm and Haas Electronic Materials, L.L.C. Zusammensetzungen enthaltend ein organisches Polysilica und ein Arylgruppen terminiertes Polyol sowie Methoden zur Herstellung von porösen organischen Polysilica-Filmen
JP4803342B2 (ja) * 2004-10-19 2011-10-26 信越化学工業株式会社 耐擦傷性表面被膜形成用シリコーンコーティング組成物及びそれを用いた被覆物品
KR100652863B1 (ko) 2005-01-20 2006-12-01 부산대학교 산학협력단 실리카-폴리이미드 하이브리드 및 그 제조방법
US8129467B2 (en) * 2005-04-15 2012-03-06 Hitachi Chemical Co., Ltd. Curing accelerating compound-silica composite material, method for producing curing accelerating compound-silica composite material, curing accelerator, curable resin composition, and electronic component device
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US20090026924A1 (en) * 2007-07-23 2009-01-29 Leung Roger Y Methods of making low-refractive index and/or low-k organosilicate coatings
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EP2075277A3 (de) * 2007-12-25 2012-11-07 Nitto Denko Corporation Silikonharzzusammensetzung
JP5106307B2 (ja) * 2008-08-06 2012-12-26 日東電工株式会社 金属酸化物微粒子を含有してなる樹脂組成物
US8889801B2 (en) * 2009-10-28 2014-11-18 Momentive Performance Materials, Inc. Surface protective coating and methods of use thereof
KR101631529B1 (ko) * 2009-10-30 2016-06-17 삼성전자 주식회사 고분자 및 이를 포함하는 조성물과 필름
JP4991943B2 (ja) 2010-02-26 2012-08-08 キヤノン株式会社 光学用部材、ポリイミド、およびその製造方法
US8952119B2 (en) * 2010-11-18 2015-02-10 Aspen Aerogels, Inc. Organically modified hybrid aerogels
KR20120057467A (ko) * 2010-11-26 2012-06-05 삼성전자주식회사 실리콘 변성 그룹을 갖는 감광성 폴리이미드, 이를 포함하는 접착 조성물 및 반도체 패키지
JP5932222B2 (ja) * 2011-01-19 2016-06-08 キヤノン株式会社 光学用部材及びその製造方法
JP5795221B2 (ja) * 2011-09-26 2015-10-14 株式会社東芝 パターン形成方法
US9320889B2 (en) 2013-02-13 2016-04-26 Cardiac Pacemakers, Inc. Cuff electrode with integrated tendril
US9434831B2 (en) * 2013-11-04 2016-09-06 Aspen Aerogels, Inc. Benzimidazole based aerogel materials
TWI540396B (zh) * 2014-02-18 2016-07-01 奇美實業股份有限公司 感光性聚矽氧烷組成物、保護膜及具有保護膜的元件
CN111819249A (zh) * 2018-03-12 2020-10-23 琳得科株式会社 固化性组合物、固化物、固化物的制造方法、和固化性组合物的使用方法
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Also Published As

Publication number Publication date
TW438860B (en) 2001-06-07
DE69716218D1 (de) 2002-11-14
US6313233B1 (en) 2001-11-06
US6011123A (en) 2000-01-04
EP0844283B1 (de) 2002-10-09
EP0844283A1 (de) 1998-05-27

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