DE69710230T2 - Nichtflüchtige Halbleiterspeichereinheit mit Korrektur-Kodierungsschaltung - Google Patents

Nichtflüchtige Halbleiterspeichereinheit mit Korrektur-Kodierungsschaltung

Info

Publication number
DE69710230T2
DE69710230T2 DE69710230T DE69710230T DE69710230T2 DE 69710230 T2 DE69710230 T2 DE 69710230T2 DE 69710230 T DE69710230 T DE 69710230T DE 69710230 T DE69710230 T DE 69710230T DE 69710230 T2 DE69710230 T2 DE 69710230T2
Authority
DE
Germany
Prior art keywords
data
error
prom
detection signal
specific
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69710230T
Other languages
English (en)
Other versions
DE69710230D1 (de
Inventor
Kunio Yoshinogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69710230D1 publication Critical patent/DE69710230D1/de
Application granted granted Critical
Publication of DE69710230T2 publication Critical patent/DE69710230T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Detection And Correction Of Errors (AREA)
DE69710230T 1996-02-28 1997-02-27 Nichtflüchtige Halbleiterspeichereinheit mit Korrektur-Kodierungsschaltung Expired - Fee Related DE69710230T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP08041042A JP3106947B2 (ja) 1996-02-28 1996-02-28 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
DE69710230D1 DE69710230D1 (de) 2002-03-21
DE69710230T2 true DE69710230T2 (de) 2002-10-24

Family

ID=12597355

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69710230T Expired - Fee Related DE69710230T2 (de) 1996-02-28 1997-02-27 Nichtflüchtige Halbleiterspeichereinheit mit Korrektur-Kodierungsschaltung

Country Status (4)

Country Link
US (1) US6052816A (de)
EP (1) EP0793173B1 (de)
JP (1) JP3106947B2 (de)
DE (1) DE69710230T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100487632B1 (ko) * 1997-10-11 2005-07-28 주식회사 하이닉스반도체 디램의다중고장검사방법
US20030120858A1 (en) 2000-09-15 2003-06-26 Matrix Semiconductor, Inc. Memory devices and methods for use therewith
US6591394B2 (en) 2000-12-22 2003-07-08 Matrix Semiconductor, Inc. Three-dimensional memory array and method for storing data bits and ECC bits therein
US7051264B2 (en) * 2001-11-14 2006-05-23 Monolithic System Technology, Inc. Error correcting memory and method of operating same
US7237082B1 (en) * 2004-06-08 2007-06-26 Sun Microsystems, Inc. Spatially distributed parity protection
US7392456B2 (en) * 2004-11-23 2008-06-24 Mosys, Inc. Predictive error correction code generation facilitating high-speed byte-write in a semiconductor memory
US8874958B2 (en) * 2010-11-09 2014-10-28 International Business Machines Corporation Error detection in a mirrored data storage system
CN102298112B (zh) * 2011-05-05 2016-06-01 中兴通讯股份有限公司 一种可编程逻辑器件的测试方法及系统

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61134988A (ja) * 1984-12-04 1986-06-23 Toshiba Corp 半導体メモリにおける誤り検出訂正機能制御系
US4726021A (en) * 1985-04-17 1988-02-16 Hitachi, Ltd. Semiconductor memory having error correcting means
EP0218830B1 (de) * 1985-09-09 1992-04-29 Hitachi, Ltd. Speicherprüfgerät
US4710934A (en) * 1985-11-08 1987-12-01 Texas Instruments Incorporated Random access memory with error correction capability
JP2527935B2 (ja) * 1986-05-19 1996-08-28 株式会社 アドバンテスト 半導体メモリ試験装置
US4872168A (en) * 1986-10-02 1989-10-03 American Telephone And Telegraph Company, At&T Bell Laboratories Integrated circuit with memory self-test
US4761783A (en) * 1986-10-17 1988-08-02 Christensen Harold F Apparatus and method for reporting occurrences of errors in signals stored in a data processor
JP2613411B2 (ja) * 1987-12-29 1997-05-28 株式会社アドバンテスト メモリ試験装置
JPH01184700A (ja) * 1988-01-11 1989-07-24 Advantest Corp メモリ試験装置
JP2821278B2 (ja) * 1991-04-15 1998-11-05 日本電気アイシーマイコンシステム株式会社 半導体集積回路
JP2745252B2 (ja) * 1991-06-24 1998-04-28 三菱電機株式会社 半導体記憶装置
US5455517A (en) * 1992-06-09 1995-10-03 International Business Machines Corporation Data output impedance control
JPH06275098A (ja) * 1993-03-24 1994-09-30 Mitsubishi Electric Corp 半導体記憶装置
JP2801495B2 (ja) * 1993-04-07 1998-09-21 シャープ株式会社 光記録再生装置

Also Published As

Publication number Publication date
EP0793173A2 (de) 1997-09-03
EP0793173A3 (de) 1998-03-25
EP0793173B1 (de) 2002-02-06
DE69710230D1 (de) 2002-03-21
JPH09231785A (ja) 1997-09-05
US6052816A (en) 2000-04-18
JP3106947B2 (ja) 2000-11-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee