DE69708981T2 - Flüssigkristallanzeige - Google Patents

Flüssigkristallanzeige

Info

Publication number
DE69708981T2
DE69708981T2 DE69708981T DE69708981T DE69708981T2 DE 69708981 T2 DE69708981 T2 DE 69708981T2 DE 69708981 T DE69708981 T DE 69708981T DE 69708981 T DE69708981 T DE 69708981T DE 69708981 T2 DE69708981 T2 DE 69708981T2
Authority
DE
Germany
Prior art keywords
liquid
crystal display
crystal
display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69708981T
Other languages
English (en)
Other versions
DE69708981D1 (de
Inventor
Genshiro Kawachi
Yoshiro Mikami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE69708981D1 publication Critical patent/DE69708981D1/de
Publication of DE69708981T2 publication Critical patent/DE69708981T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
    • G02F1/136245—Active matrix addressed cells having more than one switching element per pixel having complementary transistors

Landscapes

  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
DE69708981T 1996-07-03 1997-07-03 Flüssigkristallanzeige Expired - Fee Related DE69708981T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17318896 1996-07-03

Publications (2)

Publication Number Publication Date
DE69708981D1 DE69708981D1 (de) 2002-01-24
DE69708981T2 true DE69708981T2 (de) 2002-04-25

Family

ID=15955732

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69708981T Expired - Fee Related DE69708981T2 (de) 1996-07-03 1997-07-03 Flüssigkristallanzeige

Country Status (6)

Country Link
US (2) US6104040A (de)
EP (1) EP0816903B1 (de)
KR (1) KR100546905B1 (de)
DE (1) DE69708981T2 (de)
SG (1) SG73573A1 (de)
TW (1) TW324862B (de)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW324862B (en) * 1996-07-03 1998-01-11 Hitachi Ltd Liquid display apparatus
US6005801A (en) * 1997-08-20 1999-12-21 Micron Technology, Inc. Reduced leakage DRAM storage unit
JP2000347159A (ja) * 1999-06-09 2000-12-15 Hitachi Ltd 液晶表示装置
KR100324871B1 (ko) * 1999-06-25 2002-02-28 구본준, 론 위라하디락사 박막트랜지스터 제조방법
US6227723B1 (en) * 1999-06-30 2001-05-08 Kyocera Corporation Substrate for mounting an optical component and optical module provided with the same
US6952020B1 (en) * 1999-07-06 2005-10-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP4104800B2 (ja) * 1999-12-08 2008-06-18 三菱電機株式会社 液晶表示装置およびｔｆｔパネル
US6998656B2 (en) * 2003-02-07 2006-02-14 Hewlett-Packard Development Company, L.P. Transparent double-injection field-effect transistor
TW490649B (en) * 2000-12-29 2002-06-11 Ind Tech Res Inst Drive circuit of a single matrix-type organic electrically triggered light emission pixel
JP4202012B2 (ja) * 2001-11-09 2008-12-24 株式会社半導体エネルギー研究所 発光装置及び電流記憶回路
JP2004296665A (ja) * 2003-03-26 2004-10-21 Seiko Epson Corp 半導体装置、電気光学装置、および電子機器
KR100542986B1 (ko) * 2003-04-29 2006-01-20 삼성에스디아이 주식회사 박막 트랜지스터, 상기 박막 트랜지스터 제조 방법 및 이를 이용한 표시장치
TW200500979A (en) * 2003-05-20 2005-01-01 Adv Lcd Tech Dev Ct Co Ltd Light emission type display apparatus
KR100515357B1 (ko) * 2003-08-14 2005-09-15 삼성에스디아이 주식회사 게이트와 바디가 전기적으로 연결된 박막 트랜지스터와 그제조방법
KR100543004B1 (ko) 2003-09-18 2006-01-20 삼성에스디아이 주식회사 평판표시장치
KR100501706B1 (ko) 2003-10-16 2005-07-18 삼성에스디아이 주식회사 게이트-바디콘택 박막 트랜지스터
KR100626007B1 (ko) * 2004-06-30 2006-09-20 삼성에스디아이 주식회사 박막 트랜지스터, 상기 박막 트랜지스터의 제조방법, 이박막 트랜지스터를 구비한 평판표시장치, 및 이평판표시장치의 제조방법
KR100688979B1 (ko) * 2005-06-14 2007-03-08 삼성전자주식회사 백라이트유닛
JP4967264B2 (ja) * 2005-07-11 2012-07-04 株式会社日立製作所 半導体装置
KR100741976B1 (ko) 2005-08-25 2007-07-23 삼성에스디아이 주식회사 박막트랜지스터 및 그 제조 방법
US7754509B2 (en) * 2006-03-29 2010-07-13 Chunghua Picture Tubes, Ltd. Manufacturing method for thin film transistor
KR101261609B1 (ko) * 2006-07-06 2013-05-06 삼성디스플레이 주식회사 박막 트랜지스터, 표시판 및 그 제조 방법
KR101319076B1 (ko) 2006-12-22 2013-10-17 엘지디스플레이 주식회사 문턱 전압 복원 기능을 가진 트랜지스터와 그의 구동 및제조 방법
KR100878284B1 (ko) * 2007-03-09 2009-01-12 삼성모바일디스플레이주식회사 박막트랜지스터와 그 제조 방법 및 이를 구비한유기전계발광표시장치
KR100875432B1 (ko) 2007-05-31 2008-12-22 삼성모바일디스플레이주식회사 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치
KR100889626B1 (ko) 2007-08-22 2009-03-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 이를 구비한유기전계발광표시장치, 및 그의 제조방법
KR100889627B1 (ko) 2007-08-23 2009-03-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 구비한유기전계발광표시장치
KR100982310B1 (ko) 2008-03-27 2010-09-15 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR100989136B1 (ko) * 2008-04-11 2010-10-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR101002666B1 (ko) 2008-07-14 2010-12-21 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR101272892B1 (ko) * 2009-11-11 2013-06-11 엘지디스플레이 주식회사 어레이 기판
WO2011099342A1 (en) * 2010-02-10 2011-08-18 Semiconductor Energy Laboratory Co., Ltd. Field effect transistor
JP5521993B2 (ja) * 2010-11-17 2014-06-18 富士通セミコンダクター株式会社 半導体装置の製造方法及び半導体装置
KR102319478B1 (ko) * 2014-03-18 2021-10-29 삼성디스플레이 주식회사 박막 트랜지스터 및 그 제조 방법
CN105810749B (zh) * 2014-12-31 2018-12-21 清华大学 N型薄膜晶体管
KR102283919B1 (ko) 2015-01-06 2021-07-30 삼성디스플레이 주식회사 액정 표시 장치
CN105390510B (zh) * 2015-12-14 2018-06-01 武汉华星光电技术有限公司 低温多晶硅tft基板及其制作方法
US20220310732A1 (en) * 2020-10-27 2022-09-29 Chengdu Boe Optoelectronics Technology Co., Ltd. Array substrate, fabrication method thereof and display device

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JP3437863B2 (ja) 1993-01-18 2003-08-18 株式会社半導体エネルギー研究所 Ｍｉｓ型半導体装置の作製方法
JPH07175084A (ja) 1993-12-21 1995-07-14 Hitachi Ltd 液晶表示装置及びその製造方法
GB9311129D0 (en) * 1993-05-28 1993-07-14 Philips Electronics Uk Ltd Electronic devices with-film circuit elements forming a sampling circuit
KR100294026B1 (ko) 1993-06-24 2001-09-17 야마자끼 순페이 전기광학장치
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US5985703A (en) 1994-10-24 1999-11-16 Banerjee; Sanjay Method of making thin film transistors
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TW324862B (en) * 1996-07-03 1998-01-11 Hitachi Ltd Liquid display apparatus
JP3323889B2 (ja) 1996-10-28 2002-09-09 三菱電機株式会社 薄膜トランジスタの製造方法

Also Published As

Publication number Publication date
US6104040A (en) 2000-08-15
TW324862B (en) 1998-01-11
SG73573A1 (en) 2000-06-20
EP0816903A1 (de) 1998-01-07
DE69708981D1 (de) 2002-01-24
US6812489B2 (en) 2004-11-02
KR100546905B1 (ko) 2006-08-22
US20030160237A1 (en) 2003-08-28
EP0816903B1 (de) 2001-12-12
KR980010572A (ko) 1998-04-30

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