DE69706754D1 - Verfahren und Halterung zum Beschichten der Spiegelflächen eines Laserstabs - Google Patents

Verfahren und Halterung zum Beschichten der Spiegelflächen eines Laserstabs

Info

Publication number
DE69706754D1
DE69706754D1 DE69706754T DE69706754T DE69706754D1 DE 69706754 D1 DE69706754 D1 DE 69706754D1 DE 69706754 T DE69706754 T DE 69706754T DE 69706754 T DE69706754 T DE 69706754T DE 69706754 D1 DE69706754 D1 DE 69706754D1
Authority
DE
Germany
Prior art keywords
holder
coating
mirror surfaces
laser rod
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69706754T
Other languages
English (en)
Other versions
DE69706754T2 (de
Inventor
Utpal Kumar Chakrabarti
George John Przybylek
Paul Sangone Chen
Dominic Paul Rinaudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agere Systems LLC
Original Assignee
Agere Systems Optoelectronics Guardian Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agere Systems Optoelectronics Guardian Corp filed Critical Agere Systems Optoelectronics Guardian Corp
Application granted granted Critical
Publication of DE69706754D1 publication Critical patent/DE69706754D1/de
Publication of DE69706754T2 publication Critical patent/DE69706754T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/0915—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light
    • H01S3/0933—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light of a semiconductor, e.g. light emitting diode
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Lasers (AREA)
  • Laser Beam Processing (AREA)
  • Physical Vapour Deposition (AREA)
DE69706754T 1996-05-09 1997-04-30 Verfahren und Halterung zum Beschichten der Spiegelflächen eines Laserstabs Expired - Lifetime DE69706754T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1906896P 1996-05-09 1996-05-09

Publications (2)

Publication Number Publication Date
DE69706754D1 true DE69706754D1 (de) 2001-10-25
DE69706754T2 DE69706754T2 (de) 2002-07-04

Family

ID=21791244

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69706754T Expired - Lifetime DE69706754T2 (de) 1996-05-09 1997-04-30 Verfahren und Halterung zum Beschichten der Spiegelflächen eines Laserstabs

Country Status (5)

Country Link
US (2) US5911830A (de)
EP (1) EP0806494B1 (de)
JP (1) JP3217989B2 (de)
KR (1) KR970077848A (de)
DE (1) DE69706754T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5911830A (en) * 1996-05-09 1999-06-15 Lucent Technologies Inc. Method and fixture for laser bar facet coating
DE19812562A1 (de) * 1998-03-21 1999-09-23 Joachim Sacher Beschichtungs-Verfahren und -Vorrichtung
US6026557A (en) * 1998-04-02 2000-02-22 Lucent Technologies Inc. Method for laser bar facet coating
US5989637A (en) * 1998-04-16 1999-11-23 Lucent Technologies, Inc. Method for preventing facet coating overspray
US6125530A (en) * 1999-01-05 2000-10-03 Lucent Technologies, Inc. Method and apparatus for handling laser bar
US6170132B1 (en) * 1999-09-01 2001-01-09 Lucent Technologies Inc. Magnetic laser bar clamp
US6258403B1 (en) * 1999-09-16 2001-07-10 Lucent Technologies, Inc. Method for coating facet edges of an optoelectrical device
US6249955B1 (en) * 1999-10-13 2001-06-26 Agere Systems Optoelectronics Guardian Corp. Laser bar transport method
KR100934679B1 (ko) * 2000-10-17 2009-12-31 네오포토닉스 코포레이션 반응성 증착에 의한 코팅 형성
JP3784639B2 (ja) * 2000-11-28 2006-06-14 シャープ株式会社 半導体レーザ端面コート方法及び固定フレーム
DE60231215D1 (de) * 2002-10-31 2009-04-02 Avago Tech Fiber Ip Sg Pte Ltd Verfahren und Träger zur Behandlung von Facetten von photonischen Bauelementen
US7208046B1 (en) * 2003-01-10 2007-04-24 White Electronic Designs Corporation Spray coating apparatus and fixtures
US20050064090A1 (en) * 2003-09-24 2005-03-24 Union Optronics Corporation Method for coating on laser-diode facet
CN1293402C (zh) * 2003-10-20 2007-01-03 中国科学院半导体研究所 具有自动识别装置的同轴封装半导体激光器耦合用夹具
US8277877B1 (en) * 2006-05-15 2012-10-02 Finisar Corporation Method for applying protective laser facet coatings
TWI417406B (zh) * 2006-10-27 2013-12-01 Hon Hai Prec Ind Co Ltd 鍍膜用基片夾具、鍍膜用轉盤及鍍膜機
CN104368891B (zh) * 2013-08-16 2016-08-10 东方强光（北京)科技有限公司 一种激光巴条单元叠层烧结的夹具
DE102014102037A1 (de) * 2014-02-18 2015-08-20 Osram Opto Semiconductors Gmbh Halbleitervorrichtung und Verfahren zum Aufbringen einer Beschichtung auf mehrere Halbleitervorrichtungen
CN104300361A (zh) * 2014-09-26 2015-01-21 北京工业大学 一种半导体激光器腔面镀膜陪片及使用
TWI794475B (zh) * 2018-05-09 2023-03-01 德商索萊爾有限公司 用於接收多個基板以進行處理之保持裝置、處理系統及方法
CN111501042B (zh) * 2020-06-02 2023-09-01 海南师范大学 一种边发射半导体激光芯片腔面镀膜夹具

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4397724A (en) * 1981-08-24 1983-08-09 Bell Telephone Laboratories, Incorporated Apparatus and method for plasma-assisted etching of wafers
US4391696A (en) * 1981-08-25 1983-07-05 Rca Corporation Method and apparatus for holding styli
JPS60140780A (ja) * 1983-12-27 1985-07-25 Matsushita Electric Ind Co Ltd 半導体表面処理用治具
DE3418332A1 (de) * 1984-05-17 1985-11-21 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Vorrichtung zur halterung zylinderfoermiger koerper
JPS6328859A (ja) * 1986-07-22 1988-02-06 Mitsubishi Electric Corp 蒸着装置
JPS6384971U (de) * 1986-11-25 1988-06-03
JPS63273388A (ja) * 1987-04-30 1988-11-10 Nec Corp 半導体レ−ザ
JPS63308922A (ja) * 1987-06-11 1988-12-16 Hitachi Ltd 半導体製造用ｃｖｄ装置の排気装置
JPS63308992A (ja) * 1987-06-11 1988-12-16 Nec Corp 光半導体素子の製造方法
DE68915763T2 (de) * 1989-09-07 1994-12-08 Ibm Verfahren zur Spiegelpassivierung bei Halbleiterlaserdioden.
JPH03268382A (ja) * 1990-03-16 1991-11-29 Mitsubishi Electric Corp 半導体レーザ装置の製造方法
EP0457998B1 (de) * 1990-05-25 1994-01-26 International Business Machines Corporation Verfahren und Vorrichtung zum Spalten von Halbleiterplatten und Bekleiden der gespalteten Facetten
US5154333A (en) * 1991-10-30 1992-10-13 International Business Machines Corporation Jaw cleaving device
US5391036A (en) * 1993-03-15 1995-02-21 International Business Machines Corporation Magnetic transfer device
US5911830A (en) * 1996-05-09 1999-06-15 Lucent Technologies Inc. Method and fixture for laser bar facet coating
US5668049A (en) * 1996-07-31 1997-09-16 Lucent Technologies Inc. Method of making a GaAs-based laser comprising a facet coating with gas phase sulphur

Also Published As

Publication number Publication date
DE69706754T2 (de) 2002-07-04
EP0806494B1 (de) 2001-09-19
KR970077848A (ko) 1997-12-12
US6037006A (en) 2000-03-14
US5911830A (en) 1999-06-15
EP0806494A1 (de) 1997-11-12
JP3217989B2 (ja) 2001-10-15
JPH1056232A (ja) 1998-02-24

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