DE69628075D1 - Vorspannungssteuerschaltung eines HF-Leistungsverstärkers - Google Patents

Vorspannungssteuerschaltung eines HF-Leistungsverstärkers

Info

Publication number
DE69628075D1
DE69628075D1 DE69628075T DE69628075T DE69628075D1 DE 69628075 D1 DE69628075 D1 DE 69628075D1 DE 69628075 T DE69628075 T DE 69628075T DE 69628075 T DE69628075 T DE 69628075T DE 69628075 D1 DE69628075 D1 DE 69628075D1
Authority
DE
Germany
Prior art keywords
control circuit
power amplifier
bias control
bias
amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69628075T
Other languages
English (en)
Other versions
DE69628075T2 (de
Inventor
Simo Murtojarvi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Nokia Oyj
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nokia Oyj filed Critical Nokia Oyj
Publication of DE69628075D1 publication Critical patent/DE69628075D1/de
Application granted granted Critical
Publication of DE69628075T2 publication Critical patent/DE69628075T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3241—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits
    • H03F1/3276—Modifications of amplifiers to reduce non-linear distortion using predistortion circuits using the nonlinearity inherent to components, e.g. a diode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
DE69628075T 1995-03-21 1996-03-04 Vorspannungssteuerschaltung eines HF-Leistungsverstärkers Expired - Lifetime DE69628075T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/407,653 US5493255A (en) 1995-03-21 1995-03-21 Bias control circuit for an RF power amplifier
US407653 1995-03-21

Publications (2)

Publication Number Publication Date
DE69628075D1 true DE69628075D1 (de) 2003-06-18
DE69628075T2 DE69628075T2 (de) 2004-03-18

Family

ID=23612971

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69628075T Expired - Lifetime DE69628075T2 (de) 1995-03-21 1996-03-04 Vorspannungssteuerschaltung eines HF-Leistungsverstärkers

Country Status (4)

Country Link
US (1) US5493255A (de)
EP (1) EP0734118B1 (de)
JP (1) JPH08274557A (de)
DE (1) DE69628075T2 (de)

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US6824307B2 (en) 2000-12-12 2004-11-30 Harris Corporation Temperature sensor and related methods
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US6724252B2 (en) * 2002-02-21 2004-04-20 Rf Micro Devices, Inc. Switched gain amplifier circuit
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GB2389275B (en) 2002-05-31 2006-10-25 Hitachi Ltd Apparatus for mobile communication system
US6762647B1 (en) * 2002-08-09 2004-07-13 Triquint Semiconductor, Inc. Active protection circuit for load mismatched power amplifier
KR20050083712A (ko) 2002-10-03 2005-08-26 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 무선 통신 시스템용 전력 증폭기, 이를 포함한 ｕｍｔｓ핸드셋 및 그 전력 증폭기의 전력 소비 감소 방법
US20040070454A1 (en) * 2002-10-15 2004-04-15 Triquint Semiconductor, Inc. Continuous bias circuit and method for an amplifier
US6701134B1 (en) 2002-11-05 2004-03-02 Rf Micro Devices, Inc. Increased dynamic range for power amplifiers used with polar modulation
FI115935B (fi) 2003-02-25 2005-08-15 Nokia Corp Menetelmä ja laite tehovahvistimen ominaisuuksien säätämiseksi
JP4111853B2 (ja) * 2003-03-25 2008-07-02 富士通テン株式会社 送受信共用ｆｍ−ｃｗレーダ装置及びｆｍ−ｃｗレーダの信号処理方法
SE526386C2 (sv) * 2003-11-10 2005-09-06 Infineon Technologies Ag Spänning-till-strömomvandlare och förfarande för att omvandla
US7177370B2 (en) * 2003-12-17 2007-02-13 Triquint Semiconductor, Inc. Method and architecture for dual-mode linear and saturated power amplifier operation
JP2005229268A (ja) * 2004-02-12 2005-08-25 Renesas Technology Corp 高周波電力増幅回路および無線通信システム
US7109791B1 (en) 2004-07-09 2006-09-19 Rf Micro Devices, Inc. Tailored collector voltage to minimize variation in AM to PM distortion in a power amplifier
JP4077831B2 (ja) * 2005-05-11 2008-04-23 松下電器産業株式会社 高周波増幅器
US7336127B2 (en) * 2005-06-10 2008-02-26 Rf Micro Devices, Inc. Doherty amplifier configuration for a collector controlled power amplifier
US7330071B1 (en) 2005-10-19 2008-02-12 Rf Micro Devices, Inc. High efficiency radio frequency power amplifier having an extended dynamic range
WO2008103375A2 (en) * 2007-02-19 2008-08-28 Mobileaccess Networks Ltd. Method and system for improving uplink performance
CN101090275B (zh) * 2007-06-22 2010-06-16 中兴通讯股份有限公司 一种实现温度补偿的发信机系统及其温度补偿电路
US7768353B2 (en) * 2008-06-13 2010-08-03 Samsung Electro-Mechanics Company, Ltd. Systems and methods for switching mode power amplifier control
US8115552B2 (en) * 2010-01-11 2012-02-14 Microchip Technology Incorporated Amplifier circuit with step gain
US8624675B2 (en) * 2010-03-25 2014-01-07 Lloyd Lautzenhiser Method and system for providing automatic gate bias and bias sequencing for field effect transistors
CN102570985B (zh) * 2011-12-31 2014-08-06 上海贝岭股份有限公司 一种用于电力线多载波通信系统的功率放大电路
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KR102267237B1 (ko) 2014-03-07 2021-06-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
WO2018030278A1 (ja) * 2016-08-10 2018-02-15 株式会社村田製作所 電力増幅モジュール、フロントエンド回路および通信装置
US9847765B1 (en) * 2016-08-16 2017-12-19 Raytheon Company Amplifier with automatic gain control
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Also Published As

Publication number Publication date
US5493255A (en) 1996-02-20
JPH08274557A (ja) 1996-10-18
EP0734118B1 (de) 2003-05-14
DE69628075T2 (de) 2004-03-18
EP0734118A1 (de) 1996-09-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: RENESAS ELECTRONICS CORP., KAWASAKI-SHI, KANAG, JP