DE69621348D1 - Verfahren und vorrichtung zur herstellung von polykristallinem silizium und verfahren zur herstellung eines siliziumsubstrats für eine solarzelle - Google Patents

Verfahren und vorrichtung zur herstellung von polykristallinem silizium und verfahren zur herstellung eines siliziumsubstrats für eine solarzelle

Info

Publication number
DE69621348D1
DE69621348D1 DE69621348T DE69621348T DE69621348D1 DE 69621348 D1 DE69621348 D1 DE 69621348D1 DE 69621348 T DE69621348 T DE 69621348T DE 69621348 T DE69621348 T DE 69621348T DE 69621348 D1 DE69621348 D1 DE 69621348D1
Authority
DE
Germany
Prior art keywords
producing
silicon
solar cell
polycristalline
silicon substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Revoked
Application number
DE69621348T
Other languages
English (en)
Other versions
DE69621348T2 (de
Inventor
Fukuo Aratani
Yoshiei Kato
Yasuhiko Sakaguchi
Noriyoshi Yuge
Hiroyuki Baba
Naomichi Nakamura
Kazuhiro Hanazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JFE Steel Corp
Original Assignee
Kawasaki Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kawasaki Steel Corp filed Critical Kawasaki Steel Corp
Priority claimed from PCT/JP1996/002965 external-priority patent/WO1998016466A1/ja
Publication of DE69621348D1 publication Critical patent/DE69621348D1/de
Application granted granted Critical
Publication of DE69621348T2 publication Critical patent/DE69621348T2/de
Anticipated expiration legal-status Critical
Revoked legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
DE69621348T 1996-10-14 1996-10-14 Verfahren und vorrichtung zur herstellung von polykristallinem silizium und verfahren zur herstellung eines siliziumsubstrats für eine solarzelle Revoked DE69621348T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1996/002965 WO1998016466A1 (fr) 1996-10-14 1996-10-14 Procede et appareil de preparation de silicium polycristallin et procede de preparation d'un substrat en silicium pour cellule solaire

Publications (2)

Publication Number Publication Date
DE69621348D1 true DE69621348D1 (de) 2002-06-27
DE69621348T2 DE69621348T2 (de) 2002-09-05

Family

ID=14153957

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69621348T Revoked DE69621348T2 (de) 1996-10-14 1996-10-14 Verfahren und vorrichtung zur herstellung von polykristallinem silizium und verfahren zur herstellung eines siliziumsubstrats für eine solarzelle

Country Status (6)

Country Link
US (1) US5961944A (de)
JP (1) JP3325900B2 (de)
KR (1) KR100263220B1 (de)
BR (1) BR9611816A (de)
DE (1) DE69621348T2 (de)
TW (1) TW335539B (de)

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Also Published As

Publication number Publication date
US5961944A (en) 1999-10-05
KR100263220B1 (ko) 2000-09-01
TW335539B (en) 1998-07-01
BR9611816A (pt) 1999-07-13
DE69621348T2 (de) 2002-09-05
JP3325900B2 (ja) 2002-09-17
KR19980703521A (ko) 1998-11-05

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