DE69526890D1 - Ausseraxiales Ausrichtsystem für abtastende Photolithographie - Google Patents

Ausseraxiales Ausrichtsystem für abtastende Photolithographie

Info

Publication number
DE69526890D1
DE69526890D1 DE69526890T DE69526890T DE69526890D1 DE 69526890 D1 DE69526890 D1 DE 69526890D1 DE 69526890 T DE69526890 T DE 69526890T DE 69526890 T DE69526890 T DE 69526890T DE 69526890 D1 DE69526890 D1 DE 69526890D1
Authority
DE
Germany
Prior art keywords
alignment system
axis alignment
scanning photolithography
photolithography
scanning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69526890T
Other languages
English (en)
Other versions
DE69526890T2 (de
Inventor
David Angeley
Stan Drazkiewicz
Gregg Gallatin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SVG Lithography Systems Inc
Original Assignee
SVG Lithography Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SVG Lithography Systems Inc filed Critical SVG Lithography Systems Inc
Application granted granted Critical
Publication of DE69526890D1 publication Critical patent/DE69526890D1/de
Publication of DE69526890T2 publication Critical patent/DE69526890T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69526890T 1994-08-17 1995-08-01 Ausseraxiales Ausrichtsystem für abtastende Photolithographie Expired - Fee Related DE69526890T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/292,096 US5477057A (en) 1994-08-17 1994-08-17 Off axis alignment system for scanning photolithography

Publications (2)

Publication Number Publication Date
DE69526890D1 true DE69526890D1 (de) 2002-07-11
DE69526890T2 DE69526890T2 (de) 2002-10-02

Family

ID=23123200

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69526890T Expired - Fee Related DE69526890T2 (de) 1994-08-17 1995-08-01 Ausseraxiales Ausrichtsystem für abtastende Photolithographie

Country Status (6)

Country Link
US (1) US5477057A (de)
EP (1) EP0698826B1 (de)
JP (2) JPH08190202A (de)
KR (1) KR100381745B1 (de)
CA (1) CA2155045A1 (de)
DE (1) DE69526890T2 (de)

Families Citing this family (59)

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US5477057A (en) * 1994-08-17 1995-12-19 Svg Lithography Systems, Inc. Off axis alignment system for scanning photolithography
US5783833A (en) * 1994-12-12 1998-07-21 Nikon Corporation Method and apparatus for alignment with a substrate, using coma imparting optics
US5686996A (en) * 1995-05-25 1997-11-11 Advanced Micro Devices, Inc. Device and method for aligning a laser
US6023338A (en) * 1996-07-12 2000-02-08 Bareket; Noah Overlay alignment measurement of wafers
US5920396A (en) * 1996-10-16 1999-07-06 Svg Lithography Systems, Inc. Line width insensitive wafer target detection
KR100544439B1 (ko) * 1997-03-07 2006-06-07 에이에스엠엘 네델란즈 비.브이. 얼라인먼트유니트를갖는리소그래픽투영장치
US5767523A (en) * 1997-04-09 1998-06-16 Svg Lithography Systems, Inc. Multiple detector alignment system for photolithography
US5952669A (en) * 1997-11-12 1999-09-14 Mustek Systems Inc. Method of alignment for CCD and the apparatus of the same
US6282331B1 (en) 1997-11-17 2001-08-28 Mustek Systems Inc. Apparatus of alignment for scanner and a method of the same
WO2001009927A1 (en) * 1999-07-28 2001-02-08 Infineon Technologies North America Corp. Semiconductor structures and manufacturing methods
KR20010058151A (ko) * 1999-12-24 2001-07-05 박종섭 변형 조명계를 이용한 웨이퍼 정렬 시스템
US6525818B1 (en) * 2000-02-08 2003-02-25 Infineon Technologies Ag Overlay alignment system using polarization schemes
US6444557B1 (en) 2000-03-14 2002-09-03 International Business Machines Corporation Method of forming a damascene structure using a sacrificial conductive layer
US6628406B1 (en) 2000-04-20 2003-09-30 Justin L. Kreuzer Self referencing mark independent alignment sensor
JP2001351842A (ja) * 2000-06-05 2001-12-21 Canon Inc 位置検出方法、位置検出装置、露光装置、デバイス製造方法、半導体製造工場および露光装置の保守方法
US6462818B1 (en) * 2000-06-22 2002-10-08 Kla-Tencor Corporation Overlay alignment mark design
US7541201B2 (en) 2000-08-30 2009-06-02 Kla-Tencor Technologies Corporation Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
US7068833B1 (en) * 2000-08-30 2006-06-27 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US6486954B1 (en) 2000-09-01 2002-11-26 Kla-Tencor Technologies Corporation Overlay alignment measurement mark
US6466312B1 (en) * 2001-07-09 2002-10-15 St&T Instrument Corp. Illuminance sensing head structure
JP3997761B2 (ja) * 2001-11-19 2007-10-24 株式会社ニコン 照明光学装置およびそれを備えた検査装置
US7804994B2 (en) * 2002-02-15 2010-09-28 Kla-Tencor Technologies Corporation Overlay metrology and control method
CN1495540B (zh) * 2002-09-20 2010-08-11 Asml荷兰有限公司 利用至少两个波长的光刻系统的对准系统和方法
CN100510962C (zh) 2002-12-16 2009-07-08 Asml荷兰有限公司 具有对准子系统的光刻装置和使用对准的器件制造方法
EP1431832A1 (de) * 2002-12-16 2004-06-23 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
TWI264620B (en) * 2003-03-07 2006-10-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1455235A3 (de) * 2003-03-07 2009-04-22 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
US7075639B2 (en) * 2003-04-25 2006-07-11 Kla-Tencor Technologies Corporation Method and mark for metrology of phase errors on phase shift masks
US7346878B1 (en) 2003-07-02 2008-03-18 Kla-Tencor Technologies Corporation Apparatus and methods for providing in-chip microtargets for metrology or inspection
US7608468B1 (en) 2003-07-02 2009-10-27 Kla-Tencor Technologies, Corp. Apparatus and methods for determining overlay and uses of same
WO2005015313A1 (en) * 2003-08-04 2005-02-17 Carl Zeiss Smt Ag Illumination mask for range-resolved detection of scattered light
US7162223B2 (en) * 2004-02-17 2007-01-09 Teamon Systems, Inc. System and method for notifying users of an event using alerts
US7511798B2 (en) * 2004-07-30 2009-03-31 Asml Holding N.V. Off-axis catadioptric projection optical system for lithography
US7557921B1 (en) 2005-01-14 2009-07-07 Kla-Tencor Technologies Corporation Apparatus and methods for optically monitoring the fidelity of patterns produced by photolitographic tools
US7538868B2 (en) * 2005-12-19 2009-05-26 Kla-Tencor Technologies Corporation Pattern recognition matching for bright field imaging of low contrast semiconductor devices
US7511826B2 (en) * 2006-02-27 2009-03-31 Asml Holding N.V. Symmetrical illumination forming system and method
US7738692B2 (en) 2006-07-20 2010-06-15 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of determining quality of a light source
US7589832B2 (en) * 2006-08-10 2009-09-15 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device method
US20090042115A1 (en) * 2007-04-10 2009-02-12 Nikon Corporation Exposure apparatus, exposure method, and electronic device manufacturing method
US20090042139A1 (en) * 2007-04-10 2009-02-12 Nikon Corporation Exposure method and electronic device manufacturing method
US8440375B2 (en) * 2007-05-29 2013-05-14 Nikon Corporation Exposure method and electronic device manufacturing method
IL194580A0 (en) * 2007-10-09 2009-08-03 Asml Netherlands Bv Alignment method and apparatus, lithographic apparatus, metrology apparatus and device manufacturing method
CN101211124B (zh) * 2007-12-21 2010-06-02 上海微电子装备有限公司 一种同轴对准消色差光学系统
CN101286011B (zh) * 2008-05-30 2010-06-02 上海微电子装备有限公司 光刻设备的探测装置、探测方法及制造方法
JP5800456B2 (ja) * 2009-12-16 2015-10-28 キヤノン株式会社 検出器、インプリント装置及び物品の製造方法
US8947664B2 (en) * 2009-12-23 2015-02-03 Infineon Technologies Ag Apparatus and method for aligning a wafer's backside to a wafer's frontside
US9927718B2 (en) 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems
CN102419520B (zh) * 2010-09-27 2014-07-02 上海微电子装备有限公司 一种对准信号模拟发生装置
EP2699967B1 (de) 2011-04-22 2023-09-13 ASML Netherlands B.V. Positionsbestimmung in einem lithografiesystem mit einem substrat mit teilweise reflektierender druckmarke
WO2012144903A2 (en) * 2011-04-22 2012-10-26 Mapper Lithography Ip B.V. Lithography system for processing a target, such as a wafer, a method for operating a lithography system for processing a target, such as a wafer and a substrate for use in such a lithography system
WO2012158025A2 (en) 2011-05-13 2012-11-22 Mapper Lithography Ip B.V. Lithography system for processing at least a part of a target
US10890436B2 (en) 2011-07-19 2021-01-12 Kla Corporation Overlay targets with orthogonal underlayer dummyfill
US9360778B2 (en) * 2012-03-02 2016-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for lithography patterning
NL2015269A (en) * 2014-08-29 2016-07-08 Asml Holding Nv Method and apparatus for spectrally broadening radiation.
US10435786B2 (en) * 2014-09-10 2019-10-08 Applied Materials, Inc. Alignment systems employing actuators providing relative displacement between lid assemblies of process chambers and substrates, and related methods
US10451412B2 (en) 2016-04-22 2019-10-22 Kla-Tencor Corporation Apparatus and methods for detecting overlay errors using scatterometry
JP7038666B2 (ja) 2016-04-26 2022-03-18 エーエスエムエル ネザーランズ ビー．ブイ． 測定システム、較正方法、リソグラフィ装置及びポジショナ
CN114585972A (zh) * 2019-10-21 2022-06-03 Asml控股股份有限公司 感测对准标记的设备和方法
EP3926403A1 (de) * 2020-06-17 2021-12-22 Mycronic Ab Verfahren und vorrichtung zur ausrichtung einer maskenlosen zweiten schicht

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JPS5872945A (ja) * 1981-10-28 1983-05-02 Canon Inc アライメントマ−ク検出方法
JPS5963503A (ja) * 1982-10-02 1984-04-11 Canon Inc マ−ク位置検出方法
JPS59101827A (ja) * 1982-12-01 1984-06-12 Canon Inc 検知光学系
US4871257A (en) * 1982-12-01 1989-10-03 Canon Kabushiki Kaisha Optical apparatus for observing patterned article
US4549084A (en) * 1982-12-21 1985-10-22 The Perkin-Elmer Corporation Alignment and focusing system for a scanning mask aligner
US4545683A (en) * 1983-02-28 1985-10-08 The Perkin-Elmer Corporation Wafer alignment device
US4578590A (en) * 1983-05-02 1986-03-25 The Perkin-Elmer Corporation Continuous alignment target pattern and signal processing
JPS60188953A (ja) * 1984-03-08 1985-09-26 Canon Inc 位置検出装置
JPS60220348A (ja) * 1984-04-17 1985-11-05 Canon Inc 位置合せ装置
US4697087A (en) * 1986-07-31 1987-09-29 The Perkin-Elmer Corporation Reverse dark field alignment system for scanning lithographic aligner
US4769680A (en) * 1987-10-22 1988-09-06 Mrs Technology, Inc. Apparatus and method for making large area electronic devices, such as flat panel displays and the like, using correlated, aligned dual optical systems
JPH0430414A (ja) * 1990-05-25 1992-02-03 Matsushita Electric Ind Co Ltd 位置決め装置
JPH0629189A (ja) * 1992-07-13 1994-02-04 Hitachi Ltd 投影式露光装置およびその方法並びに照明光学装置
JP3278892B2 (ja) * 1992-03-30 2002-04-30 株式会社ニコン 露光装置及び方法、並びにデバイス製造方法
US5477057A (en) * 1994-08-17 1995-12-19 Svg Lithography Systems, Inc. Off axis alignment system for scanning photolithography

Also Published As

Publication number Publication date
EP0698826B1 (de) 2002-06-05
KR960008995A (ko) 1996-03-22
JP4253014B2 (ja) 2009-04-08
DE69526890T2 (de) 2002-10-02
CA2155045A1 (en) 1996-02-18
US5477057A (en) 1995-12-19
JPH08190202A (ja) 1996-07-23
EP0698826A1 (de) 1996-02-28
KR100381745B1 (ko) 2003-07-22
JP2007043199A (ja) 2007-02-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee