DE69523285D1 - Halbleiterteilchendetektor und Verfahren zu seiner Herstellung - Google Patents

Halbleiterteilchendetektor und Verfahren zu seiner Herstellung

Info

Publication number
DE69523285D1
DE69523285D1 DE69523285T DE69523285T DE69523285D1 DE 69523285 D1 DE69523285 D1 DE 69523285D1 DE 69523285 T DE69523285 T DE 69523285T DE 69523285 T DE69523285 T DE 69523285T DE 69523285 D1 DE69523285 D1 DE 69523285D1
Authority
DE
Germany
Prior art keywords
manufacture
particle detector
semiconductor particle
semiconductor
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69523285T
Other languages
English (en)
Inventor
Piero Giorgio Fallica
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Original Assignee
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno filed Critical CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Application granted granted Critical
Publication of DE69523285D1 publication Critical patent/DE69523285D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H01L31/118—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
DE69523285T 1995-02-27 1995-02-27 Halbleiterteilchendetektor und Verfahren zu seiner Herstellung Expired - Lifetime DE69523285D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP95830060A EP0730304B1 (de) 1995-02-27 1995-02-27 Halbleiterteilchendetektor und Verfahren zu seiner Herstellung

Publications (1)

Publication Number Publication Date
DE69523285D1 true DE69523285D1 (de) 2001-11-22

Family

ID=8221859

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69523285T Expired - Lifetime DE69523285D1 (de) 1995-02-27 1995-02-27 Halbleiterteilchendetektor und Verfahren zu seiner Herstellung

Country Status (4)

Country Link
US (1) US5854506A (de)
EP (1) EP0730304B1 (de)
JP (1) JP2854550B2 (de)
DE (1) DE69523285D1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69935664D1 (de) * 1999-06-15 2007-05-10 St Microelectronics Srl Monolithischer Halbleiterteilchendetektor und Verfahren zu seiner Herstellung
SE519103C2 (sv) 2000-06-02 2003-01-14 Sitek Electro Optics Ab Strålningspositionsdetektor
US6545330B1 (en) 2000-07-12 2003-04-08 International Business Machines Corporation On chip alpha-particle detector
US6717146B2 (en) * 2001-05-24 2004-04-06 Applied Materials, Inc. Tandem microchannel plate and solid state electron detector
US7148485B2 (en) * 2004-05-28 2006-12-12 Hewlett-Packard Development Company, L.P. Low-energy charged particle detector
CN101401208A (zh) * 2006-03-15 2009-04-01 皇家飞利浦电子股份有限公司 用于辐射检测的半导体器件
US20080054180A1 (en) * 2006-05-25 2008-03-06 Charles Silver Apparatus and method of detecting secondary electrons
EP1865556B1 (de) * 2006-06-05 2010-11-17 STMicroelectronics Srl DELTA E-E-Strahlungsdetektor mit Isolationsgräben und seine Herstellungsmethode
US8642944B2 (en) * 2007-08-31 2014-02-04 Schlumberger Technology Corporation Downhole tools with solid-state neutron monitors
US8158449B2 (en) * 2008-10-08 2012-04-17 International Business Machines Corporation Particle emission analysis for semiconductor fabrication steps
EP3821276B1 (de) * 2018-07-12 2023-10-18 Istituto Nazionale di Fisica Nucleare Detektor ionisierender strahlung aus siliziumkarbid

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4174562A (en) * 1973-11-02 1979-11-20 Harris Corporation Process for forming metallic ground grid for integrated circuits
US4055765A (en) * 1976-04-27 1977-10-25 The Ohio State University Gamma camera system with composite solid state detector
JPS6175569A (ja) * 1984-09-21 1986-04-17 Nissan Motor Co Ltd 半導体装置
FR2618258B1 (fr) * 1987-07-17 1990-01-05 Suisse Electronique Microtech Detecteur de particules ionisantes.
JPH01117375A (ja) * 1987-10-30 1989-05-10 Hamamatsu Photonics Kk 半導体装置
NL8900343A (nl) * 1989-02-13 1990-09-03 Univ Delft Tech Plaatsgevoelige stralingsdetector.
US5286986A (en) * 1989-04-13 1994-02-15 Kabushiki Kaisha Toshiba Semiconductor device having CCD and its peripheral bipolar transistors
JP2799540B2 (ja) * 1993-04-19 1998-09-17 シャープ株式会社 受光素子
JPH06310702A (ja) * 1993-04-26 1994-11-04 Matsushita Electron Corp 固体撮像装置およびその製造方法

Also Published As

Publication number Publication date
EP0730304A1 (de) 1996-09-04
EP0730304B1 (de) 2001-10-17
US5854506A (en) 1998-12-29
JPH0923020A (ja) 1997-01-21
JP2854550B2 (ja) 1999-02-03

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Legal Events

Date Code Title Description
8332 No legal effect for de