DE69521949D1 - Stromquellengeneratorschaltung - Google Patents

Stromquellengeneratorschaltung

Info

Publication number
DE69521949D1
DE69521949D1 DE69521949T DE69521949T DE69521949D1 DE 69521949 D1 DE69521949 D1 DE 69521949D1 DE 69521949 T DE69521949 T DE 69521949T DE 69521949 T DE69521949 T DE 69521949T DE 69521949 D1 DE69521949 D1 DE 69521949D1
Authority
DE
Germany
Prior art keywords
power source
generator circuit
source generator
circuit
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69521949T
Other languages
English (en)
Inventor
Hugh Mcintyre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Ltd Great Britain
Original Assignee
STMicroelectronics Ltd Great Britain
SGS Thomson Microelectronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Ltd Great Britain, SGS Thomson Microelectronics Ltd filed Critical STMicroelectronics Ltd Great Britain
Application granted granted Critical
Publication of DE69521949D1 publication Critical patent/DE69521949D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/267—Current mirrors using both bipolar and field-effect technology
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
DE69521949T 1994-08-26 1995-08-21 Stromquellengeneratorschaltung Expired - Lifetime DE69521949D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9417267A GB9417267D0 (en) 1994-08-26 1994-08-26 Current generator circuit

Publications (1)

Publication Number Publication Date
DE69521949D1 true DE69521949D1 (de) 2001-09-06

Family

ID=10760450

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69521949T Expired - Lifetime DE69521949D1 (de) 1994-08-26 1995-08-21 Stromquellengeneratorschaltung

Country Status (5)

Country Link
US (1) US5629611A (de)
EP (1) EP0698841B1 (de)
JP (1) JP2823822B2 (de)
DE (1) DE69521949D1 (de)
GB (1) GB9417267D0 (de)

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JP3484838B2 (ja) * 1995-09-22 2004-01-06 ソニー株式会社 記録方法及び再生装置
FR2750514A1 (fr) * 1996-06-26 1998-01-02 Philips Electronics Nv Dispositif de regulation de tension a faible dissipation interne d'energie
EP0840193B1 (de) * 1996-11-04 2002-05-02 STMicroelectronics S.r.l. Banddistanzreferenzspannungsgenerator
US5994937A (en) * 1996-11-06 1999-11-30 International Business Machines Corporation Temperature and power supply adjusted address transition detector
JP3554123B2 (ja) * 1996-12-11 2004-08-18 ローム株式会社 定電圧回路
US6075407A (en) * 1997-02-28 2000-06-13 Intel Corporation Low power digital CMOS compatible bandgap reference
US6028640A (en) * 1997-05-08 2000-02-22 Sony Corporation Current source and threshold voltage generation method and apparatus for HHK video circuit
US6018370A (en) * 1997-05-08 2000-01-25 Sony Corporation Current source and threshold voltage generation method and apparatus for HHK video circuit
WO1998051071A2 (en) * 1997-05-08 1998-11-12 Sony Electronics Inc. Current source and threshold voltage generation method and apparatus to be used in a circuit for removing the equalization pulses in a composite video synchronization signal
US5864230A (en) * 1997-06-30 1999-01-26 Lsi Logic Corporation Variation-compensated bias current generator
JP4116133B2 (ja) * 1997-07-31 2008-07-09 株式会社東芝 温度依存型定電流発生回路およびこれを用いた光半導体素子の駆動回路
US6052020A (en) 1997-09-10 2000-04-18 Intel Corporation Low supply voltage sub-bandgap reference
US6147908A (en) * 1997-11-03 2000-11-14 Cypress Semiconductor Corp. Stable adjustable programming voltage scheme
US6037833A (en) * 1997-11-10 2000-03-14 Philips Electronics North America Corporation Generator for generating voltage proportional to absolute temperature
US5867013A (en) * 1997-11-20 1999-02-02 Cypress Semiconductor Corporation Startup circuit for band-gap reference circuit
US6049202A (en) * 1998-11-13 2000-04-11 National Semiconductor Corporation Reference current generator with gated-diodes
US6177789B1 (en) * 2000-01-31 2001-01-23 National Semiconductor Corporation Line driver for producing operating condition invariant signal levels
JP3519361B2 (ja) * 2000-11-07 2004-04-12 Ｎｅｃエレクトロニクス株式会社 バンドギャップレファレンス回路
KR100441248B1 (ko) 2001-02-22 2004-07-21 삼성전자주식회사 저항 변화에 둔감한 전류 발생 회로
EP1262852B1 (de) * 2001-06-01 2005-05-11 STMicroelectronics Limited Stromquelle
TWI245122B (en) * 2001-06-29 2005-12-11 Winbond Electronics Corp Temperature measurement method and device with voltage variation compensation
JP3696145B2 (ja) * 2001-10-25 2005-09-14 株式会社東芝 温度依存型定電流発生回路
JP2003258105A (ja) * 2002-02-27 2003-09-12 Ricoh Co Ltd 基準電圧発生回路及びその製造方法、並びにそれを用いた電源装置
US6720755B1 (en) * 2002-05-16 2004-04-13 Lattice Semiconductor Corporation Band gap reference circuit
US6737849B2 (en) 2002-06-19 2004-05-18 International Business Machines Corporation Constant current source having a controlled temperature coefficient
DE10237122B4 (de) * 2002-08-13 2011-06-22 Infineon Technologies AG, 81669 Schaltung und Verfahren zur Einstellung des Arbeitspunkts einer BGR-Schaltung
FR2845767B1 (fr) * 2002-10-09 2005-12-09 St Microelectronics Sa Capteur numerique de temperature integre
FR2845781B1 (fr) 2002-10-09 2005-03-04 St Microelectronics Sa Generateur de tension de type a intervalle de bande
US6853238B1 (en) * 2002-10-23 2005-02-08 Analog Devices, Inc. Bandgap reference source
US7064602B2 (en) * 2004-05-05 2006-06-20 Rambus Inc. Dynamic gain compensation and calibration
US7453252B1 (en) * 2004-08-24 2008-11-18 National Semiconductor Corporation Circuit and method for reducing reference voltage drift in bandgap circuits
JP4603378B2 (ja) * 2005-02-08 2010-12-22 株式会社豊田中央研究所 基準電圧回路
US7148672B1 (en) * 2005-03-16 2006-12-12 Zilog, Inc. Low-voltage bandgap reference circuit with startup control
TWI269955B (en) * 2005-08-17 2007-01-01 Ind Tech Res Inst Circuit for reference current and voltage generation
KR100756317B1 (ko) * 2006-02-06 2007-09-06 삼성전자주식회사 딥 엔웰 씨모스 공정으로 구현한 수직형 바이폴라 정션트랜지스터를 이용한 전압 기준 회로 및 전류 기준 회로
JP2008117215A (ja) * 2006-11-06 2008-05-22 Toshiba Corp 基準電位発生回路
US7659705B2 (en) * 2007-03-16 2010-02-09 Smartech Worldwide Limited Low-power start-up circuit for bandgap reference voltage generator
US7598800B2 (en) * 2007-05-22 2009-10-06 Msilica Inc Method and circuit for an efficient and scalable constant current source for an electronic display
KR100882753B1 (ko) * 2007-05-29 2009-02-09 김병희 정전류 공급 회로
KR100940151B1 (ko) * 2007-12-26 2010-02-03 주식회사 동부하이텍 밴드갭 기준전압 발생회로
JP2008251055A (ja) * 2008-07-14 2008-10-16 Ricoh Co Ltd 基準電圧発生回路及びその製造方法、並びにそれを用いた電源装置
TW201017360A (en) * 2008-10-28 2010-05-01 Advanced Analog Technology Inc Bandgap voltage reference circuit
JP2011150526A (ja) * 2010-01-21 2011-08-04 Renesas Electronics Corp 基準電圧発生回路及びそれを用いた集積回路
US8878511B2 (en) * 2010-02-04 2014-11-04 Semiconductor Components Industries, Llc Current-mode programmable reference circuits and methods therefor
EP2555078B1 (de) * 2011-08-03 2014-06-25 ams AG Referenzschaltungsanordnung und Verfahren zur Erzeugung einer Referenzspannung
US9030186B2 (en) * 2012-07-12 2015-05-12 Freescale Semiconductor, Inc. Bandgap reference circuit and regulator circuit with common amplifier
US9667134B2 (en) * 2015-09-15 2017-05-30 Texas Instruments Deutschland Gmbh Startup circuit for reference circuits
CN106571797B (zh) * 2015-10-10 2024-03-15 意法半导体研发(深圳)有限公司 上电复位(por)电路
US11231736B2 (en) * 2017-11-17 2022-01-25 Samsung Electronics Co., Ltd. Reference voltage generating circuit method of generating reference voltage and integrated circuit including the same
US11460875B2 (en) 2018-12-17 2022-10-04 Marvell Asia Pte Ltd. Bandgap circuits with voltage calibration
US10613570B1 (en) * 2018-12-17 2020-04-07 Inphi Corporation Bandgap circuits with voltage calibration
CN112558672A (zh) * 2020-12-24 2021-03-26 上海贝岭股份有限公司 基准电流源及包含基准电流源的芯片

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US4250445A (en) * 1979-01-17 1981-02-10 Analog Devices, Incorporated Band-gap voltage reference with curvature correction
USRE30586E (en) * 1979-02-02 1981-04-21 Analog Devices, Incorporated Solid-state regulated voltage supply
US4443753A (en) * 1981-08-24 1984-04-17 Advanced Micro Devices, Inc. Second order temperature compensated band cap voltage reference
US4588941A (en) * 1985-02-11 1986-05-13 At&T Bell Laboratories Cascode CMOS bandgap reference
US4714872A (en) * 1986-07-10 1987-12-22 Tektronix, Inc. Voltage reference for transistor constant-current source
GB2222884A (en) * 1988-09-19 1990-03-21 Philips Electronic Associated Temperature sensing circuit
GB2224846A (en) * 1988-11-14 1990-05-16 Philips Electronic Associated Temperature sensing circuit
US4978868A (en) * 1989-08-07 1990-12-18 Harris Corporation Simplified transistor base current compensation circuitry
EP0424264B1 (de) * 1989-10-20 1993-01-20 STMicroelectronics S.A. Stromquelle mit niedrigem Temperaturkoeffizient
JP2715642B2 (ja) * 1990-08-22 1998-02-18 日本電気株式会社 半導体集積回路
DE59105528D1 (de) * 1991-02-18 1995-06-22 Siemens Ag Integrierbarer Shunt-Regler.
IT1246598B (it) * 1991-04-12 1994-11-24 Sgs Thomson Microelectronics Circuito di riferimento di tensione a band-gap campionato
IT1252324B (it) * 1991-07-18 1995-06-08 Sgs Thomson Microelectronics Circuito integrato regolatore di tensione ad elevata stabilita' e basso consumo di corrente.
JPH0745994Y2 (ja) * 1991-11-18 1995-10-18 株式会社フジタ 電磁波シールド材の目地接合部
US5424628A (en) * 1993-04-30 1995-06-13 Texas Instruments Incorporated Bandgap reference with compensation via current squaring
US5508958A (en) * 1994-09-29 1996-04-16 Intel Corporation Method and apparatus for sensing the state of floating gate memory cells by applying a variable gate voltage

Also Published As

Publication number Publication date
US5629611A (en) 1997-05-13
JP2823822B2 (ja) 1998-11-11
JPH08194554A (ja) 1996-07-30
EP0698841A1 (de) 1996-02-28
EP0698841B1 (de) 2001-08-01
GB9417267D0 (en) 1994-10-19

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Legal Events

Date Code Title Description
8332 No legal effect for de