DE69519056D1 - Zuverlässigkeitstestverfahren für Halbleiternutanordnungen - Google Patents
Zuverlässigkeitstestverfahren für HalbleiternutanordnungenInfo
- Publication number
- DE69519056D1 DE69519056D1 DE69519056T DE69519056T DE69519056D1 DE 69519056 D1 DE69519056 D1 DE 69519056D1 DE 69519056 T DE69519056 T DE 69519056T DE 69519056 T DE69519056 T DE 69519056T DE 69519056 D1 DE69519056 D1 DE 69519056D1
- Authority
- DE
- Germany
- Prior art keywords
- test method
- reliability test
- groove arrangements
- semiconductor groove
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000010998 test method Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/268,755 US5486772A (en) | 1994-06-30 | 1994-06-30 | Reliability test method for semiconductor trench devices |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69519056D1 true DE69519056D1 (de) | 2000-11-16 |
DE69519056T2 DE69519056T2 (de) | 2001-03-08 |
Family
ID=23024326
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69519056T Expired - Fee Related DE69519056T2 (de) | 1994-06-30 | 1995-06-19 | Zuverlässigkeitstestverfahren für Halbleiternutanordnungen |
DE0690311T Pending DE690311T1 (de) | 1994-06-30 | 1995-06-19 | Zuverlässigkeitstestverfahren für Halbleiternutanordnungen |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE0690311T Pending DE690311T1 (de) | 1994-06-30 | 1995-06-19 | Zuverlässigkeitstestverfahren für Halbleiternutanordnungen |
Country Status (5)
Country | Link |
---|---|
US (1) | US5486772A (de) |
EP (1) | EP0690311B1 (de) |
JP (1) | JP3921248B2 (de) |
KR (1) | KR0161322B1 (de) |
DE (2) | DE69519056T2 (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5689128A (en) * | 1995-08-21 | 1997-11-18 | Siliconix Incorporated | High density trenched DMOS transistor |
US5821583A (en) * | 1996-03-06 | 1998-10-13 | Siliconix Incorporated | Trenched DMOS transistor with lightly doped tub |
DE19610065A1 (de) * | 1996-03-14 | 1997-09-18 | Siemens Ag | Verfahren zur Abschätzung der Lebensdauer eines Leistungshalbleiter-Bauelements |
WO1998045719A1 (en) | 1997-04-04 | 1998-10-15 | University Of Florida | Method for testing and diagnosing mos transistors |
US6255707B1 (en) | 1998-08-24 | 2001-07-03 | Lucent Technologies, Inc. | Semiconductor laser reliability test structure and method |
US6348808B1 (en) * | 1999-06-25 | 2002-02-19 | Lsi Logic Corporation | Mobile ionic contamination detection in manufacture of semiconductor devices |
US7745289B2 (en) | 2000-08-16 | 2010-06-29 | Fairchild Semiconductor Corporation | Method of forming a FET having ultra-low on-resistance and low gate charge |
US7298159B1 (en) * | 2005-07-07 | 2007-11-20 | National Semiconductor Corporation | Method of measuring the leakage current of a deep trench isolation structure |
KR100732762B1 (ko) * | 2005-10-26 | 2007-06-27 | 주식회사 하이닉스반도체 | 리세스게이트를 갖는 반도체소자의 테스트패턴 및 그제조방법 |
US7256605B2 (en) * | 2005-11-14 | 2007-08-14 | Semiconductor Components Industries, L.L.C. | Diagnostic circuit and method therefor |
JP4776368B2 (ja) * | 2005-12-20 | 2011-09-21 | 矢崎総業株式会社 | 電力供給回路のオン故障検出装置 |
JP4593526B2 (ja) * | 2006-06-09 | 2010-12-08 | 株式会社デンソー | 半導体装置のスクリーニング方法および半導体装置 |
JP4927164B2 (ja) * | 2007-04-12 | 2012-05-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2011071174A (ja) * | 2009-09-24 | 2011-04-07 | Renesas Electronics Corp | 半導体装置、及び半導体装置の特性劣化検出方法 |
CN102568578A (zh) * | 2010-12-08 | 2012-07-11 | 旺宏电子股份有限公司 | 半导体存储装置及其测试及控制方法 |
CN102737726A (zh) * | 2011-04-13 | 2012-10-17 | 旺宏电子股份有限公司 | 存储阵列局部位线缺陷的检测方法 |
CN103887202B (zh) * | 2014-03-24 | 2016-08-17 | 上海华力微电子有限公司 | 监测方法 |
CN104483615B (zh) * | 2014-12-24 | 2017-10-24 | 上海华虹宏力半导体制造有限公司 | 沟槽栅mos器件缺陷验证方法 |
CN104575614A (zh) * | 2015-02-10 | 2015-04-29 | 武汉新芯集成电路制造有限公司 | 一种存储单元失效筛选的方法 |
CN107078061B (zh) * | 2015-03-16 | 2020-07-10 | 富士电机株式会社 | 半导体装置的制造方法 |
US10215795B1 (en) * | 2018-04-13 | 2019-02-26 | Infineon Technologies Ag | Three level gate monitoring |
CN112599436B (zh) * | 2020-12-10 | 2022-07-05 | 泉芯集成电路制造(济南)有限公司 | 一种侦测结构、及sti异常孔洞的侦测方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US826875A (en) * | 1906-04-16 | 1906-07-24 | Isaac E Palmer | Thread-guide. |
DE3173901D1 (en) * | 1981-10-28 | 1986-04-03 | Ibm | Process for characterising the reliability behaviour of bipolar semiconductor devices |
US4542340A (en) * | 1982-12-30 | 1985-09-17 | Ibm Corporation | Testing method and structure for leakage current characterization in the manufacture of dynamic RAM cells |
US4835458A (en) * | 1987-11-09 | 1989-05-30 | Intel Corporation | Signature analysis technique for defect characterization of CMOS static RAM cell failures |
US5072266A (en) | 1988-12-27 | 1991-12-10 | Siliconix Incorporated | Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry |
US5239270A (en) * | 1992-02-24 | 1993-08-24 | National Semiconductor Corporation | Wafer level reliability contact test structure and method |
-
1994
- 1994-06-30 US US08/268,755 patent/US5486772A/en not_active Expired - Lifetime
-
1995
- 1995-06-19 EP EP95304255A patent/EP0690311B1/de not_active Expired - Lifetime
- 1995-06-19 DE DE69519056T patent/DE69519056T2/de not_active Expired - Fee Related
- 1995-06-19 DE DE0690311T patent/DE690311T1/de active Pending
- 1995-06-22 JP JP18079795A patent/JP3921248B2/ja not_active Expired - Fee Related
- 1995-06-23 KR KR1019950016991A patent/KR0161322B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0690311A2 (de) | 1996-01-03 |
EP0690311A3 (de) | 1997-06-18 |
US5486772A (en) | 1996-01-23 |
DE69519056T2 (de) | 2001-03-08 |
JPH08181180A (ja) | 1996-07-12 |
DE690311T1 (de) | 1996-09-19 |
KR960001769A (ko) | 1996-01-25 |
KR0161322B1 (ko) | 1999-03-20 |
EP0690311B1 (de) | 2000-10-11 |
JP3921248B2 (ja) | 2007-05-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |