DE69518938D1 - Lawinenphotodiode mit Übergitter - Google Patents
Lawinenphotodiode mit ÜbergitterInfo
- Publication number
- DE69518938D1 DE69518938D1 DE69518938T DE69518938T DE69518938D1 DE 69518938 D1 DE69518938 D1 DE 69518938D1 DE 69518938 T DE69518938 T DE 69518938T DE 69518938 T DE69518938 T DE 69518938T DE 69518938 D1 DE69518938 D1 DE 69518938D1
- Authority
- DE
- Germany
- Prior art keywords
- superlattice
- avalanche photodiode
- avalanche
- photodiode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5083694 | 1994-03-22 | ||
JP6299996A JP2762939B2 (ja) | 1994-03-22 | 1994-12-02 | 超格子アバランシェフォトダイオード |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69518938D1 true DE69518938D1 (de) | 2000-11-02 |
DE69518938T2 DE69518938T2 (de) | 2001-04-26 |
Family
ID=26391309
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69518938T Expired - Lifetime DE69518938T2 (de) | 1994-03-22 | 1995-03-22 | Lawinenphotodiode mit Übergitter |
Country Status (4)
Country | Link |
---|---|
US (1) | US5552629A (de) |
EP (1) | EP0675549B1 (de) |
JP (1) | JP2762939B2 (de) |
DE (1) | DE69518938T2 (de) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2601231B2 (ja) * | 1994-12-22 | 1997-04-16 | 日本電気株式会社 | 超格子アバランシェフォトダイオード |
JP3177962B2 (ja) | 1998-05-08 | 2001-06-18 | 日本電気株式会社 | プレーナ型アバランシェフォトダイオード |
JP3141847B2 (ja) * | 1998-07-03 | 2001-03-07 | 日本電気株式会社 | アバランシェフォトダイオード |
US6228673B1 (en) * | 1999-05-13 | 2001-05-08 | Hughes Electronics Corporation | Method of fabricating a surface coupled InGaAs photodetector |
JP2001267620A (ja) * | 2000-03-22 | 2001-09-28 | Sumitomo Electric Ind Ltd | 半導体受光素子 |
US6586718B2 (en) * | 2000-05-25 | 2003-07-01 | Matsushita Electric Industrial Co., Ltd. | Photodetector and method for fabricating the same |
JP3994655B2 (ja) | 2000-11-14 | 2007-10-24 | 住友電気工業株式会社 | 半導体受光素子 |
US6495380B2 (en) * | 2000-12-11 | 2002-12-17 | Nortel Networks Limited | Epitaxially grown avalanche photodiode |
JP4220688B2 (ja) * | 2001-02-26 | 2009-02-04 | 日本オプネクスト株式会社 | アバランシェホトダイオード |
JP4861388B2 (ja) * | 2001-02-26 | 2012-01-25 | 日本オプネクスト株式会社 | アバランシェホトダイオード |
JP2003168818A (ja) * | 2001-09-18 | 2003-06-13 | Anritsu Corp | 順メサ型アバランシェフォトダイオード及びその製造方法 |
US7072557B2 (en) * | 2001-12-21 | 2006-07-04 | Infinera Corporation | InP-based photonic integrated circuits with Al-containing waveguide cores and InP-based array waveguide gratings (AWGs) and avalanche photodiodes (APDs) and other optical components containing an InAlGaAs waveguide core |
WO2003065418A2 (en) * | 2002-02-01 | 2003-08-07 | Picometrix, Inc. | Planar avalanche photodiode |
ES2616248T3 (es) * | 2002-02-01 | 2017-06-12 | Picometrix, Llc | Fotodiodo PIN de alta velocidad con respuesta incrementada |
CN1633699A (zh) * | 2002-02-01 | 2005-06-29 | 派克米瑞斯公司 | 电荷控制雪崩光电二极管及其制造方法 |
KR20050051532A (ko) * | 2003-11-27 | 2005-06-01 | 삼성에스디아이 주식회사 | 전계방출 표시장치 |
WO2005078809A1 (ja) * | 2004-02-13 | 2005-08-25 | Nec Corporation | 半導体受光素子 |
JP4306508B2 (ja) * | 2004-03-29 | 2009-08-05 | 三菱電機株式会社 | アバランシェフォトダイオード |
JP4611066B2 (ja) * | 2004-04-13 | 2011-01-12 | 三菱電機株式会社 | アバランシェフォトダイオード |
US9640703B2 (en) | 2004-10-25 | 2017-05-02 | Mitsubishi Electric Corporation | Avalanche photodiode |
JP4841834B2 (ja) * | 2004-12-24 | 2011-12-21 | 浜松ホトニクス株式会社 | ホトダイオードアレイ |
WO2006080153A1 (ja) * | 2005-01-28 | 2006-08-03 | Nec Corporation | 半導体受光素子及びその製造方法 |
US20080191240A1 (en) * | 2005-05-18 | 2008-08-14 | Mitsubishi Electric Corporation | Avalanche Photo Diode |
JP5433948B2 (ja) | 2006-01-30 | 2014-03-05 | 日本電気株式会社 | 半導体受光素子 |
US8030684B2 (en) * | 2007-07-18 | 2011-10-04 | Jds Uniphase Corporation | Mesa-type photodetectors with lateral diffusion junctions |
JP2010135360A (ja) * | 2008-12-02 | 2010-06-17 | Mitsubishi Electric Corp | アバランシェフォトダイオード |
JP5631668B2 (ja) | 2010-09-02 | 2014-11-26 | Nttエレクトロニクス株式会社 | アバランシ・フォトダイオード |
US10128397B1 (en) * | 2012-05-21 | 2018-11-13 | The Boeing Company | Low excess noise, high gain avalanche photodiodes |
JP6137732B2 (ja) * | 2013-05-16 | 2017-05-31 | 住友電気工業株式会社 | エピタキシャルウエハおよびその製造方法 |
US10923614B2 (en) * | 2014-07-25 | 2021-02-16 | Panasonic Intellectual Property Management Co., Ltd. | Photodiode, photodiode array, and solid-state imaging device |
JP5844445B2 (ja) * | 2014-09-10 | 2016-01-20 | Nttエレクトロニクス株式会社 | アバランシ・フォトダイオード |
US9584744B2 (en) * | 2015-06-23 | 2017-02-28 | Semiconductor Components Industries, Llc | Image sensors with voltage-biased trench isolation structures |
US11101400B2 (en) * | 2017-11-28 | 2021-08-24 | Luxtera Llc | Method and system for a focused field avalanche photodiode |
CN114256374B (zh) * | 2021-12-29 | 2023-12-05 | 武汉光谷信息光电子创新中心有限公司 | 雪崩光电探测器及其制备方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0824199B2 (ja) * | 1984-05-31 | 1996-03-06 | 富士通株式会社 | 半導体受光素子の製造方法 |
JPH01149486A (ja) * | 1987-12-04 | 1989-06-12 | Fujitsu Ltd | 半導体受光素子 |
JPH02248081A (ja) * | 1989-03-22 | 1990-10-03 | Toshiba Corp | アバランシェフォトダイオード及びその製造方法 |
JPH03238879A (ja) * | 1990-02-16 | 1991-10-24 | Hitachi Ltd | 半導体受光装置 |
JP2934294B2 (ja) * | 1990-04-09 | 1999-08-16 | 日本電信電話株式会社 | アバランシェフォトダイオード |
JP2997528B2 (ja) * | 1990-10-17 | 2000-01-11 | 株式会社日立製作所 | 超格子アバランシェフォトダイオードの製造方法 |
JP2978572B2 (ja) * | 1991-02-19 | 1999-11-15 | 日本電気株式会社 | 半導体受光素子 |
JPH05102517A (ja) * | 1991-05-30 | 1993-04-23 | Fujitsu Ltd | アバランシエフオトダイオードとその製造方法 |
JP2998375B2 (ja) * | 1991-12-20 | 2000-01-11 | 日本電気株式会社 | アバランシェフォトダイオード |
JPH05190889A (ja) * | 1992-01-09 | 1993-07-30 | Hitachi Ltd | 光半導体装置 |
US5288989A (en) * | 1993-04-02 | 1994-02-22 | General Electric Company | Avalanche photodiode with moisture resistant passivation coating disposed to cover the outer periphery of the photodiode body except at a selected top contact area |
-
1994
- 1994-12-02 JP JP6299996A patent/JP2762939B2/ja not_active Expired - Lifetime
-
1995
- 1995-03-22 EP EP95104238A patent/EP0675549B1/de not_active Expired - Lifetime
- 1995-03-22 DE DE69518938T patent/DE69518938T2/de not_active Expired - Lifetime
- 1995-03-22 US US08/408,903 patent/US5552629A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69518938T2 (de) | 2001-04-26 |
EP0675549A1 (de) | 1995-10-04 |
JP2762939B2 (ja) | 1998-06-11 |
US5552629A (en) | 1996-09-03 |
EP0675549B1 (de) | 2000-09-27 |
JPH07312442A (ja) | 1995-11-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |