DE69721618D1 - Halbleiter-Photodetektor mit Wellenleiter - Google Patents

Halbleiter-Photodetektor mit Wellenleiter

Info

Publication number
DE69721618D1
DE69721618D1 DE69721618T DE69721618T DE69721618D1 DE 69721618 D1 DE69721618 D1 DE 69721618D1 DE 69721618 T DE69721618 T DE 69721618T DE 69721618 T DE69721618 T DE 69721618T DE 69721618 D1 DE69721618 D1 DE 69721618D1
Authority
DE
Germany
Prior art keywords
waveguide
semiconductor photodetector
photodetector
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69721618T
Other languages
English (en)
Other versions
DE69721618T2 (de
Inventor
Kazutoshi Kato
Yoshifumi Muramoto
Osaake Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of DE69721618D1 publication Critical patent/DE69721618D1/de
Application granted granted Critical
Publication of DE69721618T2 publication Critical patent/DE69721618T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
    • H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12123—Diode
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12126—Light absorber
DE69721618T 1996-02-28 1997-02-27 Halbleiter-Photodetektor mit Wellenleiter Expired - Lifetime DE69721618T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP4089296 1996-02-28
JP4089296 1996-02-28
JP27314796 1996-10-16
JP27314796 1996-10-16
JP33649496 1996-12-17
JP33649496 1996-12-17

Publications (2)

Publication Number Publication Date
DE69721618D1 true DE69721618D1 (de) 2003-06-12
DE69721618T2 DE69721618T2 (de) 2004-03-11

Family

ID=27290632

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69721618T Expired - Lifetime DE69721618T2 (de) 1996-02-28 1997-02-27 Halbleiter-Photodetektor mit Wellenleiter

Country Status (3)

Country Link
US (1) US5949120A (de)
EP (1) EP0793279B1 (de)
DE (1) DE69721618T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6353250B1 (en) * 1997-11-07 2002-03-05 Nippon Telegraph And Telephone Corporation Semiconductor photo-detector, semiconductor photo-detection device, and production methods thereof
US20030075672A1 (en) * 2001-10-19 2003-04-24 Yet-Zen Liu Method and apparatus for coupling optical fiber with photodetectors
JP4061057B2 (ja) 2001-12-04 2008-03-12 Ｎｔｔエレクトロニクス株式会社 フォトダイオード
CN100347865C (zh) * 2003-12-11 2007-11-07 武汉电信器件有限公司 侧面进光的双台形高速光探测器的连体式双管芯
CN106784123B (zh) * 2016-11-23 2018-10-30 苏州苏纳光电有限公司 单行载流子光电探测器及其制作方法
CN110676330B (zh) * 2019-10-14 2021-07-13 重庆邮电大学 光敏台面与n接触台面之间光隔离的低功耗波导光探测器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5006906A (en) * 1988-08-29 1991-04-09 Bell Communications Research, Inc. Integrated semiconductor waveguide/photodetector
JP2933099B2 (ja) * 1991-02-25 1999-08-09 日本電信電話株式会社 半導体導波路型受光素子
GB2253480A (en) * 1991-03-07 1992-09-09 Marconi Gec Ltd Optical waveguide photodetector
US5316593A (en) * 1992-11-16 1994-05-31 Midwest Research Institute Heterojunction solar cell with passivated emitter surface
US5376185A (en) * 1993-05-12 1994-12-27 Midwest Research Institute Single-junction solar cells with the optimum band gap for terrestrial concentrator applications
JPH0818089A (ja) * 1994-06-29 1996-01-19 Nippon Telegr & Teleph Corp <Ntt> 半導体光検出器

Also Published As

Publication number Publication date
EP0793279A2 (de) 1997-09-03
EP0793279B1 (de) 2003-05-07
DE69721618T2 (de) 2004-03-11
EP0793279A3 (de) 1998-08-12
US5949120A (en) 1999-09-07

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Legal Events

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