DE69513599D1 - Redundanter Adressenspeicher und Testverfahren dafür - Google Patents

Redundanter Adressenspeicher und Testverfahren dafür

Info

Publication number
DE69513599D1
DE69513599D1 DE69513599T DE69513599T DE69513599D1 DE 69513599 D1 DE69513599 D1 DE 69513599D1 DE 69513599 T DE69513599 T DE 69513599T DE 69513599 T DE69513599 T DE 69513599T DE 69513599 D1 DE69513599 D1 DE 69513599D1
Authority
DE
Germany
Prior art keywords
test procedure
address memory
redundant address
redundant
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69513599T
Other languages
English (en)
Other versions
DE69513599T2 (de
Inventor
Hugh Mcintyre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Ltd Great Britain
Original Assignee
STMicroelectronics Ltd Great Britain
SGS Thomson Microelectronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Ltd Great Britain, SGS Thomson Microelectronics Ltd filed Critical STMicroelectronics Ltd Great Britain
Publication of DE69513599D1 publication Critical patent/DE69513599D1/de
Application granted granted Critical
Publication of DE69513599T2 publication Critical patent/DE69513599T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/24—Accessing extra cells, e.g. dummy cells or redundant cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
DE69513599T 1994-08-26 1995-08-21 Redundanter Adressenspeicher und Testverfahren dafür Expired - Fee Related DE69513599T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9417269A GB9417269D0 (en) 1994-08-26 1994-08-26 Memory and test method therefor

Publications (2)

Publication Number Publication Date
DE69513599D1 true DE69513599D1 (de) 2000-01-05
DE69513599T2 DE69513599T2 (de) 2000-04-27

Family

ID=10760452

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69513599T Expired - Fee Related DE69513599T2 (de) 1994-08-26 1995-08-21 Redundanter Adressenspeicher und Testverfahren dafür

Country Status (5)

Country Link
US (1) US5757814A (de)
EP (1) EP0702373B1 (de)
JP (1) JP2755926B2 (de)
DE (1) DE69513599T2 (de)
GB (1) GB9417269D0 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0811988B1 (de) * 1996-06-06 2003-10-01 STMicroelectronics S.r.l. Halbleiterspeicheranordnung mit Zeilen- und Spaltenredundanzschaltungen und eine zeitverteilte Redundanzschaltungtestarchitektur
US5867504A (en) * 1997-06-05 1999-02-02 Sgs-Thomson Microelectronics, S.R.L. Semiconductor memory device with row and column redundancy circuits and a time-shared redundancy circuit test architecture.
US7061821B2 (en) * 1998-10-20 2006-06-13 International Business Machines Corporation Address wrap function for addressable memory devices
US6536003B1 (en) 2000-02-08 2003-03-18 Infineon Technologies Ag Testable read-only memory for data memory redundant logic
DE10005618A1 (de) * 2000-02-09 2001-08-30 Infineon Technologies Ag Integrierter Halbleiterspeicher mit redundanter Einheit von Speicherzellen
US7065683B1 (en) 2001-12-05 2006-06-20 Lsi Logic Corporation Long path at-speed testing
DE10256487B4 (de) * 2002-12-03 2008-12-24 Infineon Technologies Ag Integrierter Speicher und Verfahren zum Testen eines integrierten Speichers
US7131039B2 (en) * 2002-12-11 2006-10-31 Hewlett-Packard Development Company, L.P. Repair techniques for memory with multiple redundancy
DE10334520B4 (de) * 2003-07-29 2008-08-21 Infineon Technologies Ag Verfahren und Vorrichtung zur Fehlerkorrektur bei einem digitalen Speicher

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5046046A (en) * 1978-03-10 1991-09-03 Intel Corporation Redundancy CAM using word line from memory
US4796233A (en) * 1984-10-19 1989-01-03 Fujitsu Limited Bipolar-transistor type semiconductor memory device having redundancy configuration
JPS61120400A (ja) * 1984-11-14 1986-06-07 Fujitsu Ltd 半導体記憶装置
JPS61120399A (ja) * 1984-11-14 1986-06-07 Fujitsu Ltd 半導体記憶装置
JPS6214399A (ja) * 1985-07-12 1987-01-22 Fujitsu Ltd 半導体記憶装置
JPS62222500A (ja) * 1986-03-20 1987-09-30 Fujitsu Ltd 半導体記憶装置
US5617365A (en) * 1988-10-07 1997-04-01 Hitachi, Ltd. Semiconductor device having redundancy circuit
JPH0359895A (ja) * 1989-07-27 1991-03-14 Nec Corp 半導体メモリ
JPH03276498A (ja) * 1990-03-27 1991-12-06 Fujitsu Ltd 半導体集積回路装置
JPH0426999A (ja) * 1990-05-19 1992-01-30 Fujitsu Ltd 冗長情報読み出し回路
DE4028819A1 (de) * 1990-09-11 1992-03-12 Siemens Ag Schaltungsanordnung zum testen eines halbleiterspeichers mittels paralleltests mit verschiedenen testbitmustern
FR2684206B1 (fr) * 1991-11-25 1994-01-07 Sgs Thomson Microelectronics Sa Circuit de lecture de fusible de redondance pour memoire integree.
JPH05243386A (ja) * 1992-02-27 1993-09-21 Mitsubishi Electric Corp 半導体記憶装置
EP0567707A1 (de) * 1992-04-30 1993-11-03 International Business Machines Corporation Implementierung von Spaltenredundanz in einer Cachespeicherarchitektur
US5550394A (en) * 1993-06-18 1996-08-27 Texas Instruments Incorporated Semiconductor memory device and defective memory cell correction circuit
US5434208A (en) * 1992-07-10 1995-07-18 Akzo Nobel N.V. Optically non-linear active waveguiding material comprising a dopant having multiple donor-n-acceptor systems
DE4223532A1 (de) * 1992-07-17 1994-01-20 Philips Patentverwaltung Schaltungsanordnung zum Prüfen der Adressierung wenigstens einer Matrix
FR2695493B1 (fr) * 1992-09-08 1994-10-07 Thomson Composants Militaires Circuit de mémoire avec redondance.
JP2870320B2 (ja) * 1992-09-29 1999-03-17 日本電気株式会社 半導体メモリ回路
JPH06275095A (ja) * 1993-03-18 1994-09-30 Fujitsu Ltd 半導体記憶装置及び冗長アドレス書込方法
JP3257860B2 (ja) * 1993-05-17 2002-02-18 株式会社日立製作所 半導体メモリ装置
JPH07111100A (ja) * 1993-10-08 1995-04-25 Nec Corp テスト回路
DE69324020T2 (de) * 1993-12-07 1999-07-15 St Microelectronics Srl Halbleiterspeicher mit redundanter Schaltung
JP3215566B2 (ja) * 1994-01-31 2001-10-09 富士通株式会社 半導体記憶装置
DE69411532T2 (de) * 1994-02-17 1999-03-04 St Microelectronics Srl Verfahren zur Programmierung von Redundanzregistern in einer Zeilenredundanzschaltung für einen Halbleiterspeicherbaustein
JP3530574B2 (ja) * 1994-05-20 2004-05-24 株式会社ルネサステクノロジ 半導体記憶装置
GB9417266D0 (en) * 1994-08-26 1994-10-19 Inmos Ltd Testing a non-volatile memory

Also Published As

Publication number Publication date
EP0702373A1 (de) 1996-03-20
DE69513599T2 (de) 2000-04-27
US5757814A (en) 1998-05-26
GB9417269D0 (en) 1994-10-19
JPH0887900A (ja) 1996-04-02
EP0702373B1 (de) 1999-12-01
JP2755926B2 (ja) 1998-05-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee