DE69510132D1 - Vakuumkammer für Ultrahochvakuumbehandlung bei hoher Temperatur - Google Patents

Vakuumkammer für Ultrahochvakuumbehandlung bei hoher Temperatur

Info

Publication number
DE69510132D1
DE69510132D1 DE69510132T DE69510132T DE69510132D1 DE 69510132 D1 DE69510132 D1 DE 69510132D1 DE 69510132 T DE69510132 T DE 69510132T DE 69510132 T DE69510132 T DE 69510132T DE 69510132 D1 DE69510132 D1 DE 69510132D1
Authority
DE
Germany
Prior art keywords
chamber
vacuum
pump
getter
cryogenic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69510132T
Other languages
English (en)
Other versions
DE69510132T2 (de
Inventor
Seshadri Ramaswami
Robert Davenport
Jaim Nulman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE69510132D1 publication Critical patent/DE69510132D1/de
Application granted granted Critical
Publication of DE69510132T2 publication Critical patent/DE69510132T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/203—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using physical deposition, e.g. vacuum deposition, sputtering
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
    • F04B37/00—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00
    • F04B37/06—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00 for evacuating by thermal means
    • F04B37/08—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00 for evacuating by thermal means by condensing or freezing, e.g. cryogenic pumps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
DE69510132T 1994-07-20 1995-07-20 Vakuumkammer für Ultrahochvakuumbehandlung bei hoher Temperatur Expired - Fee Related DE69510132T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US27788194A 1994-07-20 1994-07-20

Publications (2)

Publication Number Publication Date
DE69510132D1 true DE69510132D1 (de) 1999-07-15
DE69510132T2 DE69510132T2 (de) 2000-01-05

Family

ID=23062770

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69510132T Expired - Fee Related DE69510132T2 (de) 1994-07-20 1995-07-20 Vakuumkammer für Ultrahochvakuumbehandlung bei hoher Temperatur

Country Status (5)

Country Link
EP (1) EP0693626B1 (de)
JP (1) JPH08203830A (de)
KR (1) KR960005772A (de)
AT (1) ATE181141T1 (de)
DE (1) DE69510132T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5911560A (en) * 1994-10-31 1999-06-15 Saes Pure Gas, Inc. Getter pump module and system
US6109880A (en) * 1994-10-31 2000-08-29 Saes Pure Gas, Inc. Getter pump module and system including focus shields
US5972183A (en) * 1994-10-31 1999-10-26 Saes Getter S.P.A Getter pump module and system
US5685963A (en) * 1994-10-31 1997-11-11 Saes Pure Gas, Inc. In situ getter pump system and method
US6142742A (en) * 1994-10-31 2000-11-07 Saes Pure Gas, Inc. Getter pump module and system
US5935395A (en) * 1995-11-08 1999-08-10 Mitel Corporation Substrate processing apparatus with non-evaporable getter pump
US5778682A (en) * 1996-06-20 1998-07-14 Mitel Corporation Reactive PVD with NEG pump
CN1252844A (zh) * 1997-04-18 2000-05-10 赛斯纯净气体公司 现场吸气泵系统和方法
IT1297013B1 (it) * 1997-12-23 1999-08-03 Getters Spa Sistema getter per la purificazione dell'atmosfera di lavoro nei processi di deposizione fisica da vapore
US6077404A (en) 1998-02-17 2000-06-20 Applied Material, Inc. Reflow chamber and process
DE10317837A1 (de) * 2003-04-16 2004-11-04 Leybold Vakuum Gmbh Vakuumkammer
KR20050104526A (ko) * 2004-04-29 2005-11-03 (주)씨에스씨 전기오븐용 회전 꼬치장치
KR100864643B1 (ko) * 2007-08-24 2008-10-23 세메스 주식회사 기판 세정 방법 및 기판 세정 장치
JP2010106290A (ja) * 2008-10-28 2010-05-13 Showa Denko Kk 成膜装置および成膜方法、磁気記録媒体、磁気記録再生装置
CN112144037B (zh) * 2020-09-17 2022-10-21 北京北方华创微电子装备有限公司 半导体设备
JP2023006149A (ja) * 2021-06-30 2023-01-18 キヤノントッキ株式会社 スパッタ装置及び電子デバイスの製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3625019A (en) * 1969-10-27 1971-12-07 Sargent Welch Scientific Co Vacuum pump with demountable cold trap and getter pump
FR2511709A1 (fr) * 1981-08-21 1983-02-25 Thomson Csf Procede pour obtenir un vide pousse dans l'enceinte d'un reacteur d'epitaxie par jets moleculaires et reacteur mettant en oeuvre ce procede
JPS58117372A (ja) * 1981-12-30 1983-07-12 Ulvac Corp クライオポンプとバルグゲッタポンプを組合わせた超高真空ポンプ
JPS60222572A (ja) * 1984-04-18 1985-11-07 Anelva Corp クライオポンプ
US4910965A (en) * 1984-06-29 1990-03-27 Helix Technology Corporation Means for periodic desorption of a cryopump
JPS62113876A (ja) * 1985-11-13 1987-05-25 Hitachi Ltd クライオポンプ
US5228501A (en) 1986-12-19 1993-07-20 Applied Materials, Inc. Physical vapor deposition clamping mechanism and heater/cooler
US4873833A (en) 1988-11-23 1989-10-17 American Telephone Telegraph Company, At&T Bell Laboratories Apparatus comprising a high-vacuum chamber
US5242566A (en) 1990-04-23 1993-09-07 Applied Materials, Inc. Planar magnetron sputtering source enabling a controlled sputtering profile out to the target perimeter
US5357760A (en) * 1993-07-22 1994-10-25 Ebara Technologies Inc. Hybrid cryogenic vacuum pump apparatus and method of operation

Also Published As

Publication number Publication date
EP0693626A1 (de) 1996-01-24
DE69510132T2 (de) 2000-01-05
JPH08203830A (ja) 1996-08-09
EP0693626B1 (de) 1999-06-09
KR960005772A (ko) 1996-02-23
ATE181141T1 (de) 1999-06-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee