DE69508635D1 - Halbleiterbauelement und hybride integrierte Schaltung - Google Patents
Halbleiterbauelement und hybride integrierte SchaltungInfo
- Publication number
- DE69508635D1 DE69508635D1 DE69508635T DE69508635T DE69508635D1 DE 69508635 D1 DE69508635 D1 DE 69508635D1 DE 69508635 T DE69508635 T DE 69508635T DE 69508635 T DE69508635 T DE 69508635T DE 69508635 D1 DE69508635 D1 DE 69508635D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- integrated circuit
- hybrid integrated
- hybrid
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/4809—Loop shape
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/01005—Boron [B]
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- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
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- H01L2924/14—Integrated circuits
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
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- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1903—Structure including wave guides
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- H01L2924/3011—Impedance
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- H01L2924/3011—Impedance
- H01L2924/30111—Impedance matching
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Waveguides (AREA)
- Microwave Amplifiers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6011269A JPH07221223A (ja) | 1994-02-03 | 1994-02-03 | 半導体装置,及び混成集積回路装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69508635D1 true DE69508635D1 (de) | 1999-05-06 |
Family
ID=11773257
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69508635T Expired - Lifetime DE69508635D1 (de) | 1994-02-03 | 1995-01-26 | Halbleiterbauelement und hybride integrierte Schaltung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5528074A (de) |
EP (1) | EP0666594B1 (de) |
JP (1) | JPH07221223A (de) |
DE (1) | DE69508635D1 (de) |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19505860A1 (de) * | 1995-02-21 | 1996-08-22 | Philips Patentverwaltung | Konverter |
US5773887A (en) * | 1996-06-03 | 1998-06-30 | Motorola, Inc. | High frequency semiconductor component |
JP3464119B2 (ja) * | 1997-04-25 | 2003-11-05 | 京セラ株式会社 | 高周波用パッケージ及びその接続構造 |
JP2910736B2 (ja) * | 1997-07-16 | 1999-06-23 | 日本電気株式会社 | ストリップ線路−導波管変換器 |
EP1014471A1 (de) * | 1998-12-24 | 2000-06-28 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Hohlleiter-Übertragungsleitungsübergang |
US6624030B2 (en) * | 2000-12-19 | 2003-09-23 | Advanced Power Devices, Inc. | Method of fabricating power rectifier device having a laterally graded P-N junction for a channel region |
US6434726B1 (en) | 1999-06-29 | 2002-08-13 | Lucent Technologies Inc. | System and method of transmission using coplanar bond wires |
US6294966B1 (en) * | 1999-12-31 | 2001-09-25 | Hei, Inc. | Interconnection device |
US6873044B2 (en) * | 2000-09-11 | 2005-03-29 | Xytrans, Inc. | Microwave monolithic integrated circuit package |
FR2826780A1 (fr) * | 2001-06-28 | 2003-01-03 | St Microelectronics Sa | Dispositif semi-conducteur a structure hyperfrequence |
JP3999710B2 (ja) * | 2002-08-01 | 2007-10-31 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
KR20050055204A (ko) * | 2003-12-05 | 2005-06-13 | 한국전자통신연구원 | 도파관 연결 장치 |
US7187256B2 (en) * | 2004-02-19 | 2007-03-06 | Hittite Microwave Corporation | RF package |
FR2869725A1 (fr) * | 2004-04-29 | 2005-11-04 | Thomson Licensing Sa | Element de transition sans contact entre un guide d'ondes et une ligne mocroruban |
JP2006222609A (ja) * | 2005-02-09 | 2006-08-24 | Sony Corp | 高周波信号伝送回路の製造方法及び高周波信号伝送回路装置 |
EP1949491B1 (de) * | 2005-11-14 | 2011-07-06 | VEGA Grieshaber KG | Hohlleiterübergang |
JP5072968B2 (ja) * | 2007-08-02 | 2012-11-14 | 三菱電機株式会社 | 導波管の接続構造 |
JP5226799B2 (ja) * | 2007-11-30 | 2013-07-03 | テレフオンアクチーボラゲット エル エム エリクソン(パブル) | マイクロストリップ‐導波管変換構成 |
WO2009128752A1 (en) * | 2008-04-16 | 2009-10-22 | Telefonaktiebolaget Lm Ericsson (Publ) | A waveguide transition arrangement |
US8089327B2 (en) * | 2009-03-09 | 2012-01-03 | Toyota Motor Engineering & Manufacturing North America, Inc. | Waveguide to plural microstrip transition |
US8901719B2 (en) | 2009-05-08 | 2014-12-02 | Optis Cellular Technology, Llc | Transition from a chip to a waveguide port |
US9123737B2 (en) * | 2010-09-21 | 2015-09-01 | Texas Instruments Incorporated | Chip to dielectric waveguide interface for sub-millimeter wave communications link |
CN103119714B (zh) * | 2010-09-21 | 2016-08-17 | 德克萨斯仪器股份有限公司 | 利用亚毫米波和介电波导的芯片到芯片通信 |
US9070703B2 (en) * | 2010-09-21 | 2015-06-30 | Texas Instruments Incorporated | High speed digital interconnect and method |
US9496593B2 (en) * | 2011-02-21 | 2016-11-15 | Siklu Communication ltd. | Enhancing operation of laminate waveguide structures using an electrically conductive fence |
US9270005B2 (en) * | 2011-02-21 | 2016-02-23 | Siklu Communication ltd. | Laminate structures having a hole surrounding a probe for propagating millimeter waves |
US9059329B2 (en) * | 2011-08-22 | 2015-06-16 | Monolithic Power Systems, Inc. | Power device with integrated Schottky diode and method for making the same |
SG188009A1 (en) * | 2011-08-26 | 2013-03-28 | Sony Corp | Waveguide network |
CN104937768B (zh) | 2012-12-27 | 2018-06-08 | 韩国科学技术院 | 使用介质波导的低功率、高速多通道芯片到芯片接口 |
KR20150075347A (ko) * | 2013-12-25 | 2015-07-03 | 가부시끼가이샤 도시바 | 반도체 패키지, 반도체 모듈 및 반도체 디바이스 |
JP2015149649A (ja) | 2014-02-07 | 2015-08-20 | 株式会社東芝 | ミリ波帯用半導体パッケージおよびミリ波帯用半導体装置 |
JP2015149650A (ja) | 2014-02-07 | 2015-08-20 | 株式会社東芝 | ミリ波帯用半導体パッケージおよびミリ波帯用半導体装置 |
US9583811B2 (en) * | 2014-08-07 | 2017-02-28 | Infineon Technologies Ag | Transition between a plastic waveguide and a semiconductor chip, where the semiconductor chip is embedded and encapsulated within a mold compound |
US9564671B2 (en) * | 2014-12-28 | 2017-02-07 | International Business Machines Corporation | Direct chip to waveguide transition including ring shaped antennas disposed in a thinned periphery of the chip |
US9537199B2 (en) | 2015-03-19 | 2017-01-03 | International Business Machines Corporation | Package structure having an integrated waveguide configured to communicate between first and second integrated circuit chips |
US9978676B2 (en) * | 2015-05-28 | 2018-05-22 | The Regents Of The University Of California | Sub-terahertz/terahertz interconnect |
RU2600506C1 (ru) * | 2015-10-02 | 2016-10-20 | Общество с ограниченной ответственностью "Радио Гигабит" | Волноводно-микрополосковый переход |
US10658739B2 (en) * | 2017-05-04 | 2020-05-19 | Mellanox Technologies, Ltd. | Wireless printed circuit board assembly with integral radio frequency waveguide |
US10622270B2 (en) | 2017-08-31 | 2020-04-14 | Texas Instruments Incorporated | Integrated circuit package with stress directing material |
US10553573B2 (en) | 2017-09-01 | 2020-02-04 | Texas Instruments Incorporated | Self-assembly of semiconductor die onto a leadframe using magnetic fields |
US10886590B2 (en) * | 2017-10-11 | 2021-01-05 | Texas Instruments Incorporated | Interposer for connecting an antenna on an IC substrate to a dielectric waveguide through an interface waveguide located within an interposer block |
US10833648B2 (en) | 2017-10-24 | 2020-11-10 | Texas Instruments Incorporated | Acoustic management in integrated circuit using phononic bandgap structure |
US10886187B2 (en) | 2017-10-24 | 2021-01-05 | Texas Instruments Incorporated | Thermal management in integrated circuit using phononic bandgap structure |
US10371891B2 (en) | 2017-10-31 | 2019-08-06 | Texas Instruments Incorporated | Integrated circuit with dielectric waveguide connector using photonic bandgap structure |
US10497651B2 (en) | 2017-10-31 | 2019-12-03 | Texas Instruments Incorporated | Electromagnetic interference shield within integrated circuit encapsulation using photonic bandgap structure |
US10444432B2 (en) * | 2017-10-31 | 2019-10-15 | Texas Instruments Incorporated | Galvanic signal path isolation in an encapsulated package using a photonic structure |
US10557754B2 (en) | 2017-10-31 | 2020-02-11 | Texas Instruments Incorporated | Spectrometry in integrated circuit using a photonic bandgap structure |
US11901270B2 (en) * | 2020-09-02 | 2024-02-13 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6341041A (ja) * | 1986-08-06 | 1988-02-22 | Mitsubishi Electric Corp | 半導体装置 |
JPS6477202A (en) * | 1987-09-18 | 1989-03-23 | Fujitsu Ltd | Semiconductor device for millimeter wave band |
JPH07105608B2 (ja) * | 1990-03-01 | 1995-11-13 | 三菱電機株式会社 | マイクロ波集積回路収納ケース |
US5206712A (en) * | 1990-04-05 | 1993-04-27 | General Electric Company | Building block approach to microwave modules |
US5049978A (en) * | 1990-09-10 | 1991-09-17 | General Electric Company | Conductively enclosed hybrid integrated circuit assembly using a silicon substrate |
JP2763445B2 (ja) * | 1992-04-03 | 1998-06-11 | 三菱電機株式会社 | 高周波信号用配線及びそのボンディング装置 |
-
1994
- 1994-02-03 JP JP6011269A patent/JPH07221223A/ja active Pending
-
1995
- 1995-01-26 DE DE69508635T patent/DE69508635D1/de not_active Expired - Lifetime
- 1995-01-26 EP EP95101085A patent/EP0666594B1/de not_active Expired - Lifetime
- 1995-01-26 US US08/378,748 patent/US5528074A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH07221223A (ja) | 1995-08-18 |
EP0666594B1 (de) | 1999-03-31 |
US5528074A (en) | 1996-06-18 |
EP0666594A1 (de) | 1995-08-09 |
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