DE69505413T2 - Verfahren zur direkten selektiven aufbringung gemusterter metallhaltiger filme - Google Patents

Verfahren zur direkten selektiven aufbringung gemusterter metallhaltiger filme

Info

Publication number
DE69505413T2
DE69505413T2 DE69505413T DE69505413T DE69505413T2 DE 69505413 T2 DE69505413 T2 DE 69505413T2 DE 69505413 T DE69505413 T DE 69505413T DE 69505413 T DE69505413 T DE 69505413T DE 69505413 T2 DE69505413 T2 DE 69505413T2
Authority
DE
Germany
Prior art keywords
patterned metal
selective application
metal containers
directly
directly selective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69505413T
Other languages
English (en)
Other versions
DE69505413D1 (de
Inventor
Ross Hill
Bentley Palmer
Alfred Avey
Sharon Blair
Chu-Hui Chu
Meihua Gao
Wai Law
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Simon Fraser University
Original Assignee
Simon Fraser University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Simon Fraser University filed Critical Simon Fraser University
Publication of DE69505413D1 publication Critical patent/DE69505413D1/de
Application granted granted Critical
Publication of DE69505413T2 publication Critical patent/DE69505413T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/143Radiation by light, e.g. photolysis or pyrolysis
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/105Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Chemically Coating (AREA)
DE69505413T 1994-11-14 1995-11-10 Verfahren zur direkten selektiven aufbringung gemusterter metallhaltiger filme Expired - Fee Related DE69505413T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/339,127 US5534312A (en) 1994-11-14 1994-11-14 Method for directly depositing metal containing patterned films
PCT/CA1995/000647 WO1996015289A1 (en) 1994-11-14 1995-11-10 Method for directly depositing metal containing patterned films

Publications (2)

Publication Number Publication Date
DE69505413D1 DE69505413D1 (de) 1998-11-19
DE69505413T2 true DE69505413T2 (de) 1999-06-10

Family

ID=23327618

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69505413T Expired - Fee Related DE69505413T2 (de) 1994-11-14 1995-11-10 Verfahren zur direkten selektiven aufbringung gemusterter metallhaltiger filme

Country Status (8)

Country Link
US (1) US5534312A (de)
EP (1) EP0792388B1 (de)
JP (1) JP3413205B2 (de)
KR (1) KR100358463B1 (de)
CN (1) CN1092244C (de)
CA (1) CA2196770C (de)
DE (1) DE69505413T2 (de)
WO (1) WO1996015289A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007018845A1 (de) 2007-04-20 2008-10-23 Carl Von Ossietzky Universität Oldenburg Verfahren zur Abscheidung einer metallhaltigen Substanz auf einem Substrat

Families Citing this family (100)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10237078A (ja) * 1996-10-14 1998-09-08 Dainippon Printing Co Ltd 金属錯体溶液、感光性金属錯体溶液及び金属酸化物膜の形成方法
US5980998A (en) * 1997-09-16 1999-11-09 Sri International Deposition of substances on a surface
US6548122B1 (en) * 1997-09-16 2003-04-15 Sri International Method of producing and depositing a metal film
CN1053713C (zh) * 1997-12-08 2000-06-21 中国科学院感光化学研究所 光诱导绝缘体表面金属化方法
IE980461A1 (en) * 1998-06-15 2000-05-03 Univ Cork Method for selective activation and metallisation of materials
US6348239B1 (en) 2000-04-28 2002-02-19 Simon Fraser University Method for depositing metal and metal oxide films and patterned films
US6162587A (en) * 1998-12-01 2000-12-19 Advanced Micro Devices Thin resist with transition metal hard mask for via etch application
US6165695A (en) * 1998-12-01 2000-12-26 Advanced Micro Devices, Inc. Thin resist with amorphous silicon hard mask for via etch application
US6127070A (en) * 1998-12-01 2000-10-03 Advanced Micro Devices, Inc. Thin resist with nitride hard mask for via etch application
US6309926B1 (en) 1998-12-04 2001-10-30 Advanced Micro Devices Thin resist with nitride hard mask for gate etch application
US6248658B1 (en) * 1999-01-13 2001-06-19 Advanced Micro Devices, Inc. Method of forming submicron-dimensioned metal patterns
JP3383838B2 (ja) * 1999-02-25 2003-03-10 独立行政法人産業技術総合研究所 金属酸化物の製造方法及び微細パターンの形成方法
US6656373B1 (en) * 1999-07-09 2003-12-02 Wavefront Sciences, Inc. Apodized micro-lenses for Hartmann wavefront sensing and method for fabricating desired profiles
US6740566B2 (en) * 1999-09-17 2004-05-25 Advanced Micro Devices, Inc. Ultra-thin resist shallow trench process using high selectivity nitride etch
US6348125B1 (en) * 2000-01-17 2002-02-19 Micron Technology, Inc. Removal of copper oxides from integrated interconnects
US20060001064A1 (en) * 2000-04-28 2006-01-05 Hill Ross H Methods for the lithographic deposition of ferroelectric materials
US20040191423A1 (en) * 2000-04-28 2004-09-30 Ruan Hai Xiong Methods for the deposition of silver and silver oxide films and patterned films
US6849305B2 (en) 2000-04-28 2005-02-01 Ekc Technology, Inc. Photolytic conversion process to form patterned amorphous film
US7074640B2 (en) * 2000-06-06 2006-07-11 Simon Fraser University Method of making barrier layers
US7427529B2 (en) * 2000-06-06 2008-09-23 Simon Fraser University Deposition of permanent polymer structures for OLED fabrication
KR20030007904A (ko) 2000-06-06 2003-01-23 이케이씨 테크놀로지, 인코포레이티드 전자 재료 제조 방법
US7176114B2 (en) * 2000-06-06 2007-02-13 Simon Fraser University Method of depositing patterned films of materials using a positive imaging process
US7067346B2 (en) * 2000-06-06 2006-06-27 Simon Foster University Titanium carboxylate films for use in semiconductor processing
US6696363B2 (en) * 2000-06-06 2004-02-24 Ekc Technology, Inc. Method of and apparatus for substrate pre-treatment
WO2002009884A2 (en) 2000-07-28 2002-02-07 Simon Fraser University Methods for the lithographic deposition of materials containing nanoparticles
US6787198B2 (en) 2000-07-28 2004-09-07 Ekc Technology, Inc. Hydrothermal treatment of nanostructured films
US6723388B2 (en) 2000-07-28 2004-04-20 Ekc Technology, Inc. Method of depositing nanostructured films with embedded nanopores
US20040209190A1 (en) * 2000-12-22 2004-10-21 Yoshiaki Mori Pattern forming method and apparatus used for semiconductor device, electric circuit, display module, and light emitting device
US6673388B2 (en) * 2001-04-27 2004-01-06 Eastman Kodak Company Method of making a printed circuit board
US6777036B2 (en) * 2001-06-06 2004-08-17 Simon Fraser University Method for the deposition of materials from mesomorphous films
KR20030022911A (ko) 2001-09-11 2003-03-19 삼성전자주식회사 금속 패턴 형성용 유기금속 전구체 및 그를 이용한 금속패턴 형성방법
KR20050033523A (ko) * 2001-10-05 2005-04-12 이케이씨 테크놀로지, 인코포레이티드 패턴화된 비정질 필름의 제조를 위한 광분해성 전환 방법
KR20030057133A (ko) * 2001-12-28 2003-07-04 삼성전자주식회사 금속 패턴 형성용 유기금속 전구체 및 이를 이용한 금속패턴 형성방법
KR20030059872A (ko) * 2002-01-03 2003-07-12 삼성전자주식회사 금속 또는 금속산화물 미세 패턴의 제조방법
DE50310646D1 (de) * 2002-04-15 2008-11-27 Schott Ag Verfahren zur beschichtung von metalloberflächen
KR100772790B1 (ko) * 2002-04-30 2007-11-01 삼성전자주식회사 금속 패턴 형성용 유기금속 전구체 및 이를 이용한 금속패턴 형성방법
KR100878236B1 (ko) * 2002-06-12 2009-01-13 삼성전자주식회사 금속 패턴의 형성 방법 및 이를 이용한 박막 트랜지스터기판의 제조 방법
GB0213925D0 (en) * 2002-06-18 2002-07-31 Univ Dundee Metallisation
KR100819297B1 (ko) * 2002-06-26 2008-04-02 삼성전자주식회사 고반사율 미세 패턴의 제조방법
KR100765684B1 (ko) * 2002-07-03 2007-10-11 삼성전자주식회사 합금 패턴 형성용 유기금속 전구체 혼합물 및 이를 이용한합금 패턴 형성방법
KR100797731B1 (ko) * 2002-11-25 2008-01-24 삼성전자주식회사 합금 패턴 형성을 위한 유기 금속화합물의 조성물 및 이를이용한 합금 패턴 형성방법
JP3920802B2 (ja) * 2003-03-28 2007-05-30 Jsr株式会社 配線、電極およびそれらの形成方法
US6869143B2 (en) 2003-04-01 2005-03-22 Bae Industries, Inc. Recliner clutch mechanism for vehicle seat
KR100974778B1 (ko) * 2003-06-30 2010-08-06 삼성전자주식회사 유기금속 전구체 조성물 및 이를 이용한 금속 필름 또는패턴 형성방법
US7488570B2 (en) * 2003-12-16 2009-02-10 Samsung Electronics Co., Ltd. Method of forming metal pattern having low resistivity
US7504199B2 (en) * 2003-12-16 2009-03-17 Samsung Electronics Co., Ltd. Method of forming metal pattern having low resistivity
US7294449B1 (en) 2003-12-31 2007-11-13 Kovio, Inc. Radiation patternable functional materials, methods of their use, and structures formed therefrom
US20050285312A1 (en) * 2004-06-23 2005-12-29 Fury Michael A Use of PMOD materials in layered (3D) manufacturing technology
WO2010059174A1 (en) 2008-08-07 2010-05-27 Pryog, Llc Metal compositions and methods of making same
KR100727466B1 (ko) 2005-02-07 2007-06-13 주식회사 잉크테크 유기 은 착체 화합물, 이의 제조방법 및 이를 이용한박막형성방법
AU2006211796B2 (en) 2005-02-07 2010-02-25 Inktec Co., Ltd. Organic silver complexes, their preparation methods and their methods for forming thin layers
WO2006093398A1 (en) * 2005-03-04 2006-09-08 Inktec Co., Ltd. Conductive inks and manufacturing method thereof
US20070075628A1 (en) * 2005-10-04 2007-04-05 General Electric Company Organic light emitting devices having latent activated layers
US20070148420A1 (en) * 2005-12-28 2007-06-28 Intel Corporation Method of making a substrate using laser assisted metallization and patterning with electroless plating without electrolytic plating
US20080085326A1 (en) * 2006-10-04 2008-04-10 Hai Xiong Ruan Antimicrobial material compositions enriched with different active oxygen species
KR100807948B1 (ko) * 2007-02-28 2008-02-28 삼성전자주식회사 저저항 금속 배선 형성방법, 금속 배선 구조 및 이를이용하는 표시장치
KR100823020B1 (ko) * 2007-07-05 2008-04-17 현대중공업 주식회사 원형 파이프 내부에의 미세패턴 제조방법
KR100920388B1 (ko) 2008-01-17 2009-10-07 연세대학교 산학협력단 무감광 리소그래피에 의한 박막 패터닝 방법
WO2010128107A1 (en) * 2009-05-07 2010-11-11 Neodec B.V. Process for manufacturing conductive tracks
EP2296171A3 (de) * 2009-09-10 2016-04-06 Basf Se Verwendung von metallorganischen gerüstmaterialien zur herstellung von mikroelektronischen bauteilen
JP5977673B2 (ja) * 2009-11-09 2016-08-24 カーネギー メロン ユニバーシティ 金属インク組成物、導電性パターン、方法および素子
DE102010052032A1 (de) 2010-11-23 2012-05-24 Leibniz-Institut Für Neue Materialien Gemeinnützige Gmbh Verfahren zur Herstellung von metallischen Strukturen
DE102010052033A1 (de) 2010-11-23 2012-05-24 Leibniz-Institut Für Neue Materialien Gemeinnützige Gmbh Verfahren zur Herstellung von metallischen Strukturen
JP5708521B2 (ja) 2011-02-15 2015-04-30 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
JP5708522B2 (ja) 2011-02-15 2015-04-30 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
KR101909567B1 (ko) * 2011-07-08 2018-10-18 에이에스엠엘 네델란즈 비.브이. 리소그래피 패터닝 공정 및 상기 공정에 사용하기 위한 레지스트
CA2846135C (en) * 2011-08-24 2017-04-04 Blue-O Technology Inc. Plate-shaped catalyst product and method for manufacturing same
US9433928B2 (en) 2011-09-01 2016-09-06 Click Materials Corp. Electrocatalytic materials and methods for manufacturing same
JP6119544B2 (ja) 2013-10-04 2017-04-26 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
KR102306612B1 (ko) 2014-01-31 2021-09-29 램 리써치 코포레이션 진공-통합된 하드마스크 프로세스 및 장치
US9592493B2 (en) 2014-12-16 2017-03-14 Eastman Kodak Company Forming silver catalytic sites from silver phosphite carboxylates
US9377688B1 (en) 2014-12-16 2016-06-28 Eastman Kodak Company Metal catalytic composition with silver N-heterocycle complex
US9586200B2 (en) 2014-12-16 2017-03-07 Eastman Kodak Company Forming catalytic sites from reducible silver complexes
US9586201B2 (en) 2014-12-16 2017-03-07 Eastman Kodak Company Forming catalytic sites from reducible silver-heterocyclic complexes
US9587315B2 (en) 2014-12-16 2017-03-07 Eastman Kodak Company Forming silver catalytic sites from reducible silver-oximes
US9375704B1 (en) 2014-12-16 2016-06-28 Eastman Kodak Company Metal catalytic composition with silver carboxylate-trialkyl(triaryl)phosphite complex
US9624582B2 (en) 2014-12-16 2017-04-18 Eastman Kodak Company Non-aqueous metal catalytic composition with oxyazinium photoreducing agent
US9387460B2 (en) 2014-12-16 2016-07-12 Eastman Kodak Company Metal catalytic composition with silver-oxime complex
WO2016101067A1 (en) * 2014-12-22 2016-06-30 Firewater Fuel Corp. Electrocatalytic films comprising amorphous metals or metal-oxides prepared using near-infrared decomposition of precursors
US9982349B2 (en) 2015-05-11 2018-05-29 Eastman Kodak Company Method for making electrically-conductive articles
US9566569B2 (en) 2015-05-11 2017-02-14 Eastman Kodak Company Metal catalytic compositions and articles therefrom
US10941163B2 (en) 2015-09-29 2021-03-09 Pryog, Llc Metal compositions and methods of making same
US9996004B2 (en) 2015-11-20 2018-06-12 Lam Research Corporation EUV photopatterning of vapor-deposited metal oxide-containing hardmasks
US10186342B2 (en) 2016-08-09 2019-01-22 Eastman Kodak Company Photosensitive reducible silver ion-containing compositions
US10314173B2 (en) 2016-08-09 2019-06-04 Eastman Kodak Company Articles with reducible silver ions or silver metal
US10356899B2 (en) 2016-08-09 2019-07-16 Eastman Kodak Company Articles having reducible silver ion complexes or silver metal
US9809606B1 (en) 2016-08-09 2017-11-07 Eastman Kodak Company Silver ion carboxylate N-heteroaromatic complexes
US10311990B2 (en) 2016-08-09 2019-06-04 Eastman Kodak Company Photosensitive reducible silver ion-containing compositions
CN109562628B (zh) 2016-08-09 2021-07-27 柯达公司 银离子羧酸根n-杂芳香族络合物和用途
US9718842B1 (en) 2016-08-09 2017-08-01 Eastman Kodak Company Silver ion carboxylate primary alkylamine complexes
WO2018031234A1 (en) 2016-08-09 2018-02-15 Eastman Kodak Company Silver ion carboxylate primary alkylamine complexes
US10087331B2 (en) 2016-08-09 2018-10-02 Eastman Kodak Company Methods for forming and using silver metal
EP3548498B1 (de) 2016-11-29 2021-04-21 Eastman Kodak Company Silberion-alpha-oxycarboxylat-oxim komplexe für fotolithografische verfahren zur erzeugung von elektrisch leitenden metallischen strukturen
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
JP7024744B2 (ja) 2018-02-22 2022-02-24 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
JP6933605B2 (ja) 2018-05-21 2021-09-08 信越化学工業株式会社 パターン形成方法
JP6875325B2 (ja) 2018-05-21 2021-05-19 信越化学工業株式会社 パターン形成方法
WO2020033673A1 (en) * 2018-08-08 2020-02-13 The Curators Of The University Of Missouri Three-dimensional laser-assisted printing of structures from nanoparticles
JP2022507368A (ja) 2018-11-14 2022-01-18 ラム リサーチ コーポレーション 次世代リソグラフィにおいて有用なハードマスクを作製する方法
KR102539806B1 (ko) 2020-01-15 2023-06-05 램 리써치 코포레이션 포토레지스트 부착 및 선량 감소를 위한 하부층

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62263973A (ja) * 1986-05-08 1987-11-16 Kazumichi Omura 金属薄膜とその製造方法
JP2514207B2 (ja) * 1987-06-29 1996-07-10 富士通株式会社 金属薄膜パタ−ンの形成方法
US4952556A (en) * 1987-12-08 1990-08-28 General Motors Corporation Patterning thin film superconductors using focused beam techniques
US4985273A (en) * 1988-06-07 1991-01-15 Matsushita Electric Industrial Co., Ltd. Method of producing fine inorganic particles
US5064685A (en) * 1989-08-23 1991-11-12 At&T Laboratories Electrical conductor deposition method
US5176744A (en) * 1991-08-09 1993-01-05 Microelectronics Computer & Technology Corp. Solution for direct copper writing
DE4210400C1 (en) * 1992-03-30 1993-01-07 Siemens Ag, 8000 Muenchen, De Local copper@ deposition from organo:metallic film on substrate - by forming film from mixt. of copper acetate and copper formate in specified ratio and depositing film by laser irradiation
JPH062145A (ja) * 1992-06-19 1994-01-11 Murata Mfg Co Ltd 光cvd装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007018845A1 (de) 2007-04-20 2008-10-23 Carl Von Ossietzky Universität Oldenburg Verfahren zur Abscheidung einer metallhaltigen Substanz auf einem Substrat
DE102007018845B4 (de) * 2007-04-20 2009-11-12 Carl Von Ossietzky Universität Oldenburg Verfahren zur Abscheidung einer metallhaltigen Substanz auf einem Substrat und Beschichtungsmaterial dafür

Also Published As

Publication number Publication date
KR970707319A (ko) 1997-12-01
CN1092244C (zh) 2002-10-09
EP0792388A1 (de) 1997-09-03
CN1163637A (zh) 1997-10-29
CA2196770C (en) 2004-02-10
JP3413205B2 (ja) 2003-06-03
US5534312A (en) 1996-07-09
KR100358463B1 (ko) 2003-01-25
WO1996015289A1 (en) 1996-05-23
DE69505413D1 (de) 1998-11-19
JPH10508660A (ja) 1998-08-25
EP0792388B1 (de) 1998-10-14
CA2196770A1 (en) 1996-05-23

Similar Documents

Publication Publication Date Title
DE69505413T2 (de) Verfahren zur direkten selektiven aufbringung gemusterter metallhaltiger filme
DE69636693D1 (de) Verfahren zur Interferenz-Überwachung
DE69623770T2 (de) Phasenschieber und verfahren zur phasenverschiebung
DE59603566D1 (de) Verfahren zur mehrschichtlackierung
DE69932526D1 (de) Verfahren zur homogenisierung
DE69622874D1 (de) Verfahren zur selektiven oxidation
DE69624729T2 (de) Verfahren zur selektiven öffnung von naphtalinringen
DE69535753D1 (de) Vorrichtung und verfahren zur mehrschichtigen beschichtigung und zur wulstbeschichtung
DE69313249D1 (de) Verfahren zur beschränkten Koaleszenz
DE59604191D1 (de) Verfahren und vorrichtung zur salzgewinnung
DE69819773D1 (de) Verfahren und vorrichtung zur herstellung von ferritisch gewalztem stahlband
DE69509651T2 (de) Verfahren und vorrichtung zur kombinierten walzen- und extrusionsbeschichtung
DE69604374D1 (de) Verfahren und vorrichtung zur freien kurveninterpolation
ATE195005T1 (de) Wässrige lösung und verfahren zur phosphatierung metallischer oberflächen
DE69727689D1 (de) Zusammensetzung für und verfahren zur metallverformung
DE69603795D1 (de) Verfahren und Vorrichtung zur Herstellung von Stahlröhren
DE69818512D1 (de) Vorrichtung und verfahren zur herstellung von stahlband
DE69501054D1 (de) Vorrichtung und Verfahren zur Herstellung von zweimal gewalztem Stahlband
DE59510307D1 (de) Verfahren zur Nachbehandlung geschweisster Platinen
DE69605561T2 (de) Verfahren zur beschichtung
DE69601540T2 (de) Verfahren zur oxychlorierung
DE69609963T2 (de) Verfahren zur iodierung
DE59603091D1 (de) Verfahren zur aufarbeitung ammoniakalischer metallösungen
DE59708316D1 (de) Verfahren zur beschichtung von metallbändern
DE69318223T2 (de) Verfahren zur sprachanalyse

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee