DE69500566D1 - Elektrostatische Halteplatte - Google Patents

Elektrostatische Halteplatte

Info

Publication number
DE69500566D1
DE69500566D1 DE69500566T DE69500566T DE69500566D1 DE 69500566 D1 DE69500566 D1 DE 69500566D1 DE 69500566 T DE69500566 T DE 69500566T DE 69500566 T DE69500566 T DE 69500566T DE 69500566 D1 DE69500566 D1 DE 69500566D1
Authority
DE
Germany
Prior art keywords
holding plate
electrostatic holding
electrostatic
plate
holding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69500566T
Other languages
English (en)
Other versions
DE69500566T2 (de
Inventor
Semyon Sherstinsky
Shamouil Shamouilian
Manoocher Birang
Alfred Mak
Simon W Tam
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE69500566D1 publication Critical patent/DE69500566D1/de
Publication of DE69500566T2 publication Critical patent/DE69500566T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)
DE69500566T 1994-02-28 1995-02-15 Elektrostatische Halteplatte Expired - Fee Related DE69500566T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US20311194A 1994-02-28 1994-02-28

Publications (2)

Publication Number Publication Date
DE69500566D1 true DE69500566D1 (de) 1997-09-25
DE69500566T2 DE69500566T2 (de) 1998-01-29

Family

ID=22752556

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69500566T Expired - Fee Related DE69500566T2 (de) 1994-02-28 1995-02-15 Elektrostatische Halteplatte

Country Status (5)

Country Link
US (2) US5634266A (de)
EP (1) EP0669644B1 (de)
JP (1) JP2840041B2 (de)
KR (1) KR950034656A (de)
DE (1) DE69500566T2 (de)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6278600B1 (en) * 1994-01-31 2001-08-21 Applied Materials, Inc. Electrostatic chuck with improved temperature control and puncture resistance
US5883778A (en) * 1994-02-28 1999-03-16 Applied Materials, Inc. Electrostatic chuck with fluid flow regulator
JP3650248B2 (ja) * 1997-03-19 2005-05-18 東京エレクトロン株式会社 プラズマ処理装置
US6034863A (en) * 1997-11-12 2000-03-07 Applied Materials, Inc. Apparatus for retaining a workpiece in a process chamber within a semiconductor wafer processing system
KR100476677B1 (ko) * 1997-11-17 2005-07-07 삼성전자주식회사 반도체장치 제조용 이온주입장치의 정전척
EP0948042A1 (de) * 1998-03-06 1999-10-06 VenTec Gesellschaft für Venturekapital und Unternehmensberatung Elektrostatische Vorrichtung zum Halten von Wafern und anderen Bauteilen
US5969934A (en) * 1998-04-10 1999-10-19 Varian Semiconductor Equipment Associats, Inc. Electrostatic wafer clamp having low particulate contamination of wafers
US5996353A (en) * 1998-05-21 1999-12-07 Applied Materials, Inc. Semiconductor processing system with a thermoelectric cooling/heating device
US6256555B1 (en) 1998-12-02 2001-07-03 Newport Corporation Robot arm with specimen edge gripping end effector
US6115232A (en) * 1998-12-03 2000-09-05 Lsi Logic Corporation Method for forming an ion implanted electrostatic chuck
US6373679B1 (en) 1999-07-02 2002-04-16 Cypress Semiconductor Corp. Electrostatic or mechanical chuck assembly conferring improved temperature uniformity onto workpieces held thereby, workpiece processing technology and/or apparatus containing the same, and method(s) for holding and/or processing a workpiece with the same
US6839217B1 (en) 1999-10-01 2005-01-04 Varian Semiconductor Equipment Associates, Inc. Surface structure and method of making, and electrostatic wafer clamp incorporating surface structure
US6362946B1 (en) 1999-11-02 2002-03-26 Varian Semiconductor Equipment Associates, Inc. Electrostatic wafer clamp having electrostatic seal for retaining gas
US6538873B1 (en) 1999-11-02 2003-03-25 Varian Semiconductor Equipment Associates, Inc. Active electrostatic seal and electrostatic vacuum pump
US6377437B1 (en) * 1999-12-22 2002-04-23 Lam Research Corporation High temperature electrostatic chuck
US6508062B2 (en) 2001-01-31 2003-01-21 Applied Materials, Inc. Thermal exchanger for a wafer chuck
DE10156407A1 (de) * 2001-11-16 2003-06-05 Bosch Gmbh Robert Haltevorrichtung, insbesondere zum Fixieren eines Halbleiterwafers in einer Plasmaätzvorrichtung, und Verfahren zur Wärmezufuhr oder Wärmeabfuhr von einem Substrat
KR20030047341A (ko) * 2001-12-10 2003-06-18 삼성전자주식회사 이온주입장치의 정전척
US20030106646A1 (en) * 2001-12-11 2003-06-12 Applied Materials, Inc. Plasma chamber insert ring
JP2003197727A (ja) * 2001-12-21 2003-07-11 Kyocera Corp ウエハ載置ステージ
KR100511854B1 (ko) 2002-06-18 2005-09-02 아네르바 가부시키가이샤 정전 흡착 장치
US6986865B2 (en) * 2002-07-10 2006-01-17 Watlow Electric Manufacturing Company Method for manufacturing an electrostatic chuck
JP4260450B2 (ja) * 2002-09-20 2009-04-30 東京エレクトロン株式会社 真空処理装置における静電チャックの製造方法
US7151658B2 (en) * 2003-04-22 2006-12-19 Axcelis Technologies, Inc. High-performance electrostatic clamp comprising a resistive layer, micro-grooves, and dielectric layer
KR101022663B1 (ko) * 2003-09-08 2011-03-22 주성엔지니어링(주) 정전척에서의 냉각 가스 공급구조
US7378616B2 (en) * 2004-06-10 2008-05-27 Asm Technology Singapore Pte. Ltd. Heating apparatus and method for semiconductor devices
KR100898793B1 (ko) * 2005-12-29 2009-05-20 엘지디스플레이 주식회사 액정표시소자용 기판 합착 장치
US8027171B2 (en) * 2006-09-19 2011-09-27 Creative Technology Corporation Feeding structure of electrostatic chuck, method for producing the same, and method for regenerating feeding structure of electrostatic chuck
DE102008037364A1 (de) 2008-08-12 2010-03-04 Suss Microtec Lithography Gmbh Vorrichtung zur Behandlung der Oberfläche eines Substrats durch Auftragen und Abschleudern einer Behandlungsflüssigkeit
NL2007452A (en) * 2010-12-08 2012-06-11 Asml Holding Nv Electrostatic clamp, lithographic apparatus and method of manufacturing an electrostatic clamp.
JP5441020B1 (ja) * 2012-08-29 2014-03-12 Ｔｏｔｏ株式会社 静電チャック
JP6349228B2 (ja) * 2014-10-22 2018-06-27 新光電気工業株式会社 静電チャック及びその静電チャックに使用されるベース部材
JP6373803B2 (ja) * 2015-06-23 2018-08-15 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体
JP2017183558A (ja) * 2016-03-31 2017-10-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法およびドライエッチング装置のメンテナンス方法
US10844488B2 (en) * 2017-01-27 2020-11-24 Veeco Instruments Inc. Chuck systems and methods having enhanced electrical isolation for substrate-biased ALD

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58190037A (ja) * 1982-04-28 1983-11-05 Toshiba Corp 静電チヤツク装置およびその製造方法
JPS6131636U (ja) * 1984-07-31 1986-02-26 株式会社 徳田製作所 静電チヤツク
JPH0697675B2 (ja) * 1985-10-21 1994-11-30 東陶機器株式会社 静電チャック基盤
JPS6372877A (ja) * 1986-09-12 1988-04-02 Tokuda Seisakusho Ltd 真空処理装置
US4724510A (en) * 1986-12-12 1988-02-09 Tegal Corporation Electrostatic wafer clamp
JPH0697677B2 (ja) * 1987-04-21 1994-11-30 東陶機器株式会社 静電チャック基盤の製造方法
WO1988009054A1 (en) * 1987-05-06 1988-11-17 Labtam Limited Electrostatic chuck using ac field excitation
JP2665242B2 (ja) * 1988-09-19 1997-10-22 東陶機器株式会社 静電チャック
EP0423327B1 (de) * 1989-05-08 1994-03-30 Koninklijke Philips Electronics N.V. Vorrichtung und verfahren zur behandlung eines flachen, scheibenförmigen substrates unter niedrigem druck
US5001594A (en) * 1989-09-06 1991-03-19 Mcnc Electrostatic handling device
US5255153A (en) * 1990-07-20 1993-10-19 Tokyo Electron Limited Electrostatic chuck and plasma apparatus equipped therewith
JPH04100255A (ja) * 1990-08-18 1992-04-02 Fujitsu Ltd 半導体製造装置
US5099571A (en) * 1990-09-07 1992-03-31 International Business Machines Corporation Method for fabricating a split-ring electrostatic chuck
US5055964A (en) * 1990-09-07 1991-10-08 International Business Machines Corporation Electrostatic chuck having tapered electrodes
JP3238925B2 (ja) * 1990-11-17 2001-12-17 株式会社東芝 静電チャック
DE69130205T2 (de) * 1990-12-25 1999-03-25 Ngk Insulators, Ltd., Nagoya, Aichi Heizungsapparat für eine Halbleiterscheibe und Verfahren zum Herstellen desselben
US5155652A (en) * 1991-05-02 1992-10-13 International Business Machines Corporation Temperature cycling ceramic electrostatic chuck
JPH04371579A (ja) * 1991-06-19 1992-12-24 Ulvac Japan Ltd 静電吸着装置
US5275683A (en) * 1991-10-24 1994-01-04 Tokyo Electron Limited Mount for supporting substrates and plasma processing apparatus using the same
US5207437A (en) * 1991-10-29 1993-05-04 International Business Machines Corporation Ceramic electrostatic wafer chuck
DE69231299T2 (de) * 1991-11-07 2001-01-18 Varian Semiconductor Equipment Associates Inc., Gloucester Verfahren zur Herstellung einer elektrostatischen Halteplatte
JPH05166757A (ja) * 1991-12-13 1993-07-02 Tokyo Electron Ltd 被処理体の温調装置
US5213349A (en) * 1991-12-18 1993-05-25 Elliott Joe C Electrostatic chuck
US5315473A (en) * 1992-01-21 1994-05-24 Applied Materials, Inc. Isolated electrostatic chuck and excitation method
US5350479A (en) * 1992-12-02 1994-09-27 Applied Materials, Inc. Electrostatic chuck for high power plasma processing
US5382311A (en) * 1992-12-17 1995-01-17 Tokyo Electron Limited Stage having electrostatic chuck and plasma processing apparatus using same
US5542559A (en) * 1993-02-16 1996-08-06 Tokyo Electron Kabushiki Kaisha Plasma treatment apparatus
US5384682A (en) * 1993-03-22 1995-01-24 Toto Ltd. Electrostatic chuck
US5452510A (en) * 1993-12-20 1995-09-26 International Business Machines Corporation Method of making an electrostatic chuck with oxide insulator
US5535090A (en) * 1994-03-03 1996-07-09 Sherman; Arthur Electrostatic chuck

Also Published As

Publication number Publication date
US5671117A (en) 1997-09-23
JPH0846019A (ja) 1996-02-16
KR950034656A (ko) 1995-12-28
DE69500566T2 (de) 1998-01-29
EP0669644B1 (de) 1997-08-20
EP0669644A2 (de) 1995-08-30
JP2840041B2 (ja) 1998-12-24
US5634266A (en) 1997-06-03
EP0669644A3 (de) 1995-12-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee