DE69425703T2 - Ein Verfahren zur Herstellung eines epitaktischen Halbleitersubstrats - Google Patents
Ein Verfahren zur Herstellung eines epitaktischen HalbleitersubstratsInfo
- Publication number
- DE69425703T2 DE69425703T2 DE69425703T DE69425703T DE69425703T2 DE 69425703 T2 DE69425703 T2 DE 69425703T2 DE 69425703 T DE69425703 T DE 69425703T DE 69425703 T DE69425703 T DE 69425703T DE 69425703 T2 DE69425703 T2 DE 69425703T2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- inyga
- manufacturing
- semiconductor substrate
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Junction Field-Effect Transistors (AREA)
- Recrystallisation Techniques (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15685093A JP3254823B2 (ja) | 1993-06-28 | 1993-06-28 | 半導体エピタキシャル基板およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69425703D1 DE69425703D1 (de) | 2000-10-05 |
DE69425703T2 true DE69425703T2 (de) | 2001-04-19 |
Family
ID=15636749
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69425703T Expired - Lifetime DE69425703T2 (de) | 1993-06-28 | 1994-06-28 | Ein Verfahren zur Herstellung eines epitaktischen Halbleitersubstrats |
Country Status (6)
Country | Link |
---|---|
US (1) | US5441913A (de) |
EP (1) | EP0631298B1 (de) |
JP (1) | JP3254823B2 (de) |
KR (1) | KR100329690B1 (de) |
CA (1) | CA2126741A1 (de) |
DE (1) | DE69425703T2 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2674474B2 (ja) * | 1993-07-29 | 1997-11-12 | 日本電気株式会社 | 歪量子井戸半導体レーザの気相成長方法 |
JPH0786184A (ja) * | 1993-09-20 | 1995-03-31 | Nec Kansai Ltd | 結晶成長方法 |
JP4867137B2 (ja) * | 2004-05-31 | 2012-02-01 | 住友化学株式会社 | 化合物半導体エピタキシャル基板 |
JP6812333B2 (ja) * | 2017-12-08 | 2021-01-13 | エア・ウォーター株式会社 | 化合物半導体基板 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4207122A (en) * | 1978-01-11 | 1980-06-10 | International Standard Electric Corporation | Infra-red light emissive devices |
US4233090A (en) * | 1979-06-28 | 1980-11-11 | Rca Corporation | Method of making a laser diode |
KR900002687B1 (ko) * | 1985-12-16 | 1990-04-23 | 후지쓰가부시끼가이샤 | Mbe법에 의한 기판에 격자 정합시키는 4원 또는 5원 흔정 반도체의 성장방법 |
US4827320A (en) * | 1986-09-19 | 1989-05-02 | University Of Illinois | Semiconductor device with strained InGaAs layer |
JPH0198215A (ja) * | 1987-10-12 | 1989-04-17 | Sumitomo Electric Ind Ltd | 化合物半導体エピタキシヤル基板 |
JP2708863B2 (ja) * | 1989-03-20 | 1998-02-04 | 三洋電機株式会社 | エピタキシヤルウエハ及びその製造方法 |
JPH0322541A (ja) * | 1989-06-20 | 1991-01-30 | Sanyo Electric Co Ltd | エピタキシャルウエハ |
US5270798A (en) * | 1990-02-20 | 1993-12-14 | Varian Associates, Inc. | High electron mobility transistor |
JPH0410684A (ja) * | 1990-04-27 | 1992-01-14 | Nec Corp | 半導体レーザ |
JPH0828326B2 (ja) * | 1990-05-18 | 1996-03-21 | シャープ株式会社 | 化合物半導体層の製造方法 |
CA2041991A1 (en) * | 1990-06-12 | 1991-12-13 | Gary E. Bulman | Silcon-doped inygal-yas laser |
JPH04186824A (ja) * | 1990-11-21 | 1992-07-03 | Fujitsu Ltd | 半導体基板およびその製造方法 |
JPH04321239A (ja) * | 1991-04-19 | 1992-11-11 | Sanyo Electric Co Ltd | 電界効果型トランジスタ |
US5298441A (en) * | 1991-06-03 | 1994-03-29 | Motorola, Inc. | Method of making high transconductance heterostructure field effect transistor |
US5162243A (en) * | 1991-08-30 | 1992-11-10 | Trw Inc. | Method of producing high reliability heterojunction bipolar transistors |
US5313093A (en) * | 1991-10-29 | 1994-05-17 | Rohm Co., Ltd. | Compound semiconductor device |
-
1993
- 1993-06-28 JP JP15685093A patent/JP3254823B2/ja not_active Expired - Fee Related
-
1994
- 1994-06-24 CA CA002126741A patent/CA2126741A1/en not_active Abandoned
- 1994-06-27 KR KR1019940014800A patent/KR100329690B1/ko not_active IP Right Cessation
- 1994-06-28 EP EP94304696A patent/EP0631298B1/de not_active Expired - Lifetime
- 1994-06-28 DE DE69425703T patent/DE69425703T2/de not_active Expired - Lifetime
- 1994-06-28 US US08/266,680 patent/US5441913A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR100329690B1 (ko) | 2002-08-17 |
EP0631298A2 (de) | 1994-12-28 |
JP3254823B2 (ja) | 2002-02-12 |
CA2126741A1 (en) | 1994-12-29 |
EP0631298A3 (de) | 1995-03-01 |
JPH0714785A (ja) | 1995-01-17 |
EP0631298B1 (de) | 2000-08-30 |
DE69425703D1 (de) | 2000-10-05 |
US5441913A (en) | 1995-08-15 |
KR950001874A (ko) | 1995-01-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: SUMITOMO CHEMICAL CO. LTD., TOKIO/TOKYO, JP |