DE69425335T2 - Hochreine Titan-Aufstäube-Targets - Google Patents

Hochreine Titan-Aufstäube-Targets

Info

Publication number
DE69425335T2
DE69425335T2 DE69425335T DE69425335T DE69425335T2 DE 69425335 T2 DE69425335 T2 DE 69425335T2 DE 69425335 T DE69425335 T DE 69425335T DE 69425335 T DE69425335 T DE 69425335T DE 69425335 T2 DE69425335 T2 DE 69425335T2
Authority
DE
Germany
Prior art keywords
sputtering targets
purity titanium
titanium sputtering
purity
targets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69425335T
Other languages
English (en)
Other versions
DE69425335D1 (de
Inventor
Susumu Sawada
Masaru Nagasawa
Fukuyo Hideaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Mining Holdings Inc
Original Assignee
Japan Energy Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5260382A external-priority patent/JP2901852B2/ja
Priority claimed from JP26038493A external-priority patent/JP2901854B2/ja
Priority claimed from JP5260381A external-priority patent/JP2948073B2/ja
Priority claimed from JP5260383A external-priority patent/JP2901853B2/ja
Priority claimed from JP5260380A external-priority patent/JPH0790560A/ja
Application filed by Japan Energy Corp filed Critical Japan Energy Corp
Application granted granted Critical
Publication of DE69425335D1 publication Critical patent/DE69425335D1/de
Publication of DE69425335T2 publication Critical patent/DE69425335T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/223—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69425335T 1993-09-27 1994-09-20 Hochreine Titan-Aufstäube-Targets Expired - Lifetime DE69425335T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP5260382A JP2901852B2 (ja) 1993-09-27 1993-09-27 高純度チタニウムスパッタリングターゲット
JP26038493A JP2901854B2 (ja) 1993-09-27 1993-09-27 高純度チタニウムスパッタリングターゲット
JP5260381A JP2948073B2 (ja) 1993-09-27 1993-09-27 高純度チタニウムスパッタリングターゲット
JP5260383A JP2901853B2 (ja) 1993-09-27 1993-09-27 高純度チタニウムスパッタリングターゲット
JP5260380A JPH0790560A (ja) 1993-09-27 1993-09-27 高純度チタニウムスパッタリングターゲット

Publications (2)

Publication Number Publication Date
DE69425335D1 DE69425335D1 (de) 2000-08-24
DE69425335T2 true DE69425335T2 (de) 2001-02-01

Family

ID=27530375

Family Applications (3)

Application Number Title Priority Date Filing Date
DE69414526T Expired - Lifetime DE69414526T2 (de) 1993-09-27 1994-09-20 Hochreine Titan-Aufstäube-Targets
DE69425284T Expired - Lifetime DE69425284T2 (de) 1993-09-27 1994-09-20 Hochreine Titansputtertargets
DE69425335T Expired - Lifetime DE69425335T2 (de) 1993-09-27 1994-09-20 Hochreine Titan-Aufstäube-Targets

Family Applications Before (2)

Application Number Title Priority Date Filing Date
DE69414526T Expired - Lifetime DE69414526T2 (de) 1993-09-27 1994-09-20 Hochreine Titan-Aufstäube-Targets
DE69425284T Expired - Lifetime DE69425284T2 (de) 1993-09-27 1994-09-20 Hochreine Titansputtertargets

Country Status (4)

Country Link
US (1) US5772860A (de)
EP (3) EP0653498B1 (de)
KR (1) KR0135369B1 (de)
DE (3) DE69414526T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10392142B4 (de) * 2003-06-23 2007-08-02 Kobelco Research Institute, Inc., Kobe Sputtertarget aus einer Silberlegierung und Verfahren zur Herstellung desselben

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2984783B2 (ja) * 1995-03-13 1999-11-29 株式会社住友シチックス尼崎 スパッタリング用チタンターゲットおよびその製造方法
JP2894279B2 (ja) * 1996-06-10 1999-05-24 日本電気株式会社 金属薄膜形成方法
US6024847A (en) * 1997-04-30 2000-02-15 The Alta Group, Inc. Apparatus for producing titanium crystal and titanium
US6309595B1 (en) 1997-04-30 2001-10-30 The Altalgroup, Inc Titanium crystal and titanium
US6063254A (en) * 1997-04-30 2000-05-16 The Alta Group, Inc. Method for producing titanium crystal and titanium
US6569270B2 (en) * 1997-07-11 2003-05-27 Honeywell International Inc. Process for producing a metal article
US5993621A (en) * 1997-07-11 1999-11-30 Johnson Matthey Electronics, Inc. Titanium sputtering target
US6045634A (en) * 1997-08-14 2000-04-04 Praxair S. T. Technology, Inc. High purity titanium sputtering target and method of making
JPH11269621A (ja) * 1997-12-24 1999-10-05 Toho Titanium Co Ltd 高純度チタン材の加工方法
US6348139B1 (en) 1998-06-17 2002-02-19 Honeywell International Inc. Tantalum-comprising articles
US6348113B1 (en) * 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
JP3820787B2 (ja) * 1999-01-08 2006-09-13 日鉱金属株式会社 スパッタリングターゲットおよびその製造方法
US20040072009A1 (en) * 1999-12-16 2004-04-15 Segal Vladimir M. Copper sputtering targets and methods of forming copper sputtering targets
US6878250B1 (en) * 1999-12-16 2005-04-12 Honeywell International Inc. Sputtering targets formed from cast materials
US6331233B1 (en) 2000-02-02 2001-12-18 Honeywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture
US7517417B2 (en) * 2000-02-02 2009-04-14 Honeywell International Inc. Tantalum PVD component producing methods
CN1285754C (zh) * 2001-05-01 2006-11-22 霍尼韦尔国际公司 包括钛和锆的物理汽相淀积靶件和使用方法
JP4110476B2 (ja) * 2001-11-26 2008-07-02 日鉱金属株式会社 スパッタリングターゲット及びその製造方法
KR100568392B1 (ko) * 2002-06-24 2006-04-05 가부시키가이샤 코베루코 카겐 은 합금 스퍼터링 타겟 및 그의 제조 방법
US20040016635A1 (en) * 2002-07-19 2004-01-29 Ford Robert B. Monolithic sputtering target assembly
WO2004079039A1 (ja) * 2003-03-07 2004-09-16 Nikko Materials Co., Ltd. ハフニウム合金ターゲット及びその製造方法
US7297247B2 (en) * 2003-05-06 2007-11-20 Applied Materials, Inc. Electroformed sputtering target
US20070084527A1 (en) * 2005-10-19 2007-04-19 Stephane Ferrasse High-strength mechanical and structural components, and methods of making high-strength components
US8647484B2 (en) * 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
US20070251818A1 (en) * 2006-05-01 2007-11-01 Wuwen Yi Copper physical vapor deposition targets and methods of making copper physical vapor deposition targets
US9279178B2 (en) * 2007-04-27 2016-03-08 Honeywell International Inc. Manufacturing design and processing methods and apparatus for sputtering targets
US9068258B2 (en) 2010-10-25 2015-06-30 Jx Nippon Mining & Metals Corporation Titanium target for sputtering
JP6077102B2 (ja) * 2013-03-06 2017-02-08 Ｊｘ金属株式会社 スパッタリング用チタンターゲット及びその製造方法
JP7179450B2 (ja) * 2017-09-21 2022-11-29 Ｊｘ金属株式会社 スパッタリング用チタンターゲット及びその製造方法、並びにチタン含有薄膜の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63216966A (ja) * 1987-03-06 1988-09-09 Toshiba Corp スパツタタ−ゲツト
JPS63312975A (ja) 1987-06-17 1988-12-21 Kasei Naoetsu:Kk アルミニウムスパツタリングタ−ゲツト
JP2671397B2 (ja) 1988-07-01 1997-10-29 住友化学工業株式会社 マグネトロンスパッタリング用ターゲット
JP2712561B2 (ja) 1989-05-26 1998-02-16 住友化学工業株式会社 スパッタリング用アルミニウムターゲット
JPH0310709A (ja) 1989-06-09 1991-01-18 Amada Co Ltd コーナーシャーリングマシン
US5155063A (en) * 1990-10-09 1992-10-13 Nec Corporation Method of fabricating semiconductor device including an al/tin/ti contact
JP2857015B2 (ja) * 1993-04-08 1999-02-10 株式会社ジャパンエナジー 高純度アルミニウムまたはその合金からなるスパッタリングターゲット

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10392142B4 (de) * 2003-06-23 2007-08-02 Kobelco Research Institute, Inc., Kobe Sputtertarget aus einer Silberlegierung und Verfahren zur Herstellung desselben

Also Published As

Publication number Publication date
DE69425284T2 (de) 2001-01-25
EP0653498B1 (de) 1998-11-11
EP0785292B1 (de) 2000-07-19
KR0135369B1 (ko) 1998-07-01
EP0785293A1 (de) 1997-07-23
EP0785293B1 (de) 2000-07-12
US5772860A (en) 1998-06-30
EP0653498A1 (de) 1995-05-17
KR950008715A (ko) 1995-04-19
DE69414526D1 (de) 1998-12-17
EP0785292A1 (de) 1997-07-23
DE69425284D1 (de) 2000-08-17
DE69425335D1 (de) 2000-08-24
DE69414526T2 (de) 1999-04-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NIKKO MATERIALS CO., LTD., TOKIO/TOKYO, JP

8327 Change in the person/name/address of the patent owner

Owner name: NIPPON MINING & METALS CO., LTD., TOKIO/TOKYO, JP

R082 Change of representative

Ref document number: 785292

Country of ref document: EP

Representative=s name: SCHWAN SCHWAN SCHORER, 80796 MUENCHEN, DE