DE69418842T2 - Apparat zur Messung der Oxidladung auf Halbleiterscheiben und Methode zur Herstellung einer Sonde für den vorerwähnten Apparat - Google Patents

Apparat zur Messung der Oxidladung auf Halbleiterscheiben und Methode zur Herstellung einer Sonde für den vorerwähnten Apparat

Info

Publication number
DE69418842T2
DE69418842T2 DE69418842T DE69418842T DE69418842T2 DE 69418842 T2 DE69418842 T2 DE 69418842T2 DE 69418842 T DE69418842 T DE 69418842T DE 69418842 T DE69418842 T DE 69418842T DE 69418842 T2 DE69418842 T2 DE 69418842T2
Authority
DE
Germany
Prior art keywords
probe
measuring
producing
semiconductor wafers
oxide charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69418842T
Other languages
English (en)
Other versions
DE69418842D1 (de
Inventor
Roger Leonard Verkuil
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE69418842D1 publication Critical patent/DE69418842D1/de
Publication of DE69418842T2 publication Critical patent/DE69418842T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
    • G01R31/1227—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
    • G01R31/1263—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation
    • G01R31/129—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation of components or parts made of semiconducting materials; of LV components or parts
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06733—Geometry aspects
    • G01R1/06738—Geometry aspects related to tip portion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Tests Of Electronic Circuits (AREA)
DE69418842T 1993-12-22 1994-11-24 Apparat zur Messung der Oxidladung auf Halbleiterscheiben und Methode zur Herstellung einer Sonde für den vorerwähnten Apparat Expired - Lifetime DE69418842T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/173,320 US5500607A (en) 1993-12-22 1993-12-22 Probe-oxide-semiconductor method and apparatus for measuring oxide charge on a semiconductor wafer

Publications (2)

Publication Number Publication Date
DE69418842D1 DE69418842D1 (de) 1999-07-08
DE69418842T2 true DE69418842T2 (de) 2000-01-27

Family

ID=22631488

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69418842T Expired - Lifetime DE69418842T2 (de) 1993-12-22 1994-11-24 Apparat zur Messung der Oxidladung auf Halbleiterscheiben und Methode zur Herstellung einer Sonde für den vorerwähnten Apparat

Country Status (4)

Country Link
US (2) US5500607A (de)
EP (1) EP0660387B1 (de)
JP (1) JP2587204B2 (de)
DE (1) DE69418842T2 (de)

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US7676077B2 (en) * 2005-11-18 2010-03-09 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
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Also Published As

Publication number Publication date
US5767691A (en) 1998-06-16
EP0660387A3 (de) 1995-11-02
EP0660387A2 (de) 1995-06-28
US5500607A (en) 1996-03-19
EP0660387B1 (de) 1999-06-02
DE69418842D1 (de) 1999-07-08
JPH07209376A (ja) 1995-08-11
JP2587204B2 (ja) 1997-03-05

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8328 Change in the person/name/address of the agent

Representative=s name: DUSCHER, R., DIPL.-PHYS. DR.RER.NAT., PAT.-ANW., 7