DE69418395T2 - Chipträger mit einer Schutzschicht für die Schaltungsoberfläche - Google Patents

Chipträger mit einer Schutzschicht für die Schaltungsoberfläche

Info

Publication number
DE69418395T2
DE69418395T2 DE69418395T DE69418395T DE69418395T2 DE 69418395 T2 DE69418395 T2 DE 69418395T2 DE 69418395 T DE69418395 T DE 69418395T DE 69418395 T DE69418395 T DE 69418395T DE 69418395 T2 DE69418395 T2 DE 69418395T2
Authority
DE
Germany
Prior art keywords
protective layer
chip carrier
circuit surface
circuit
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69418395T
Other languages
English (en)
Other versions
DE69418395D1 (de
Inventor
Alan Walter Chase
James Warren Wilson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE69418395D1 publication Critical patent/DE69418395D1/de
Application granted granted Critical
Publication of DE69418395T2 publication Critical patent/DE69418395T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
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    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
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    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12033—Gunn diode
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    • H01L2924/1204—Optical Diode
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Epoxy Resins (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
DE69418395T 1993-08-03 1994-07-07 Chipträger mit einer Schutzschicht für die Schaltungsoberfläche Expired - Fee Related DE69418395T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/101,168 US5390082A (en) 1992-07-06 1993-08-03 Chip carrier with protective coating for circuitized surface

Publications (2)

Publication Number Publication Date
DE69418395D1 DE69418395D1 (de) 1999-06-17
DE69418395T2 true DE69418395T2 (de) 1999-12-16

Family

ID=22283349

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69418395T Expired - Fee Related DE69418395T2 (de) 1993-08-03 1994-07-07 Chipträger mit einer Schutzschicht für die Schaltungsoberfläche

Country Status (10)

Country Link
US (1) US5390082A (de)
EP (1) EP0637839B1 (de)
JP (1) JP2723123B2 (de)
KR (1) KR0177138B1 (de)
CN (2) CN1142589C (de)
BR (1) BR9402986A (de)
CA (1) CA2126121C (de)
DE (1) DE69418395T2 (de)
MY (1) MY112247A (de)
TW (1) TW265464B (de)

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US5554821A (en) * 1994-07-15 1996-09-10 National Semiconductor Corporation Removable computer peripheral cards having a solid one-piece housing
US6150716A (en) * 1995-01-25 2000-11-21 International Business Machines Corporation Metal substrate having an IC chip and carrier mounting
US5677511A (en) * 1995-03-20 1997-10-14 National Semiconductor Corporation Overmolded PC board with ESD protection and EMI suppression
CN1202983A (zh) 1995-11-28 1998-12-23 株式会社日立制作所 半导体器件及其制造方法以及装配基板
US5851311A (en) * 1996-03-29 1998-12-22 Sophia Systems Co., Ltd. Polymerizable flux composition for encapsulating the solder in situ
KR100386018B1 (ko) * 1996-06-24 2003-08-25 인터내셔널 비지네스 머신즈 코포레이션 스택형반도체디바이스패키지
US5811883A (en) * 1996-09-30 1998-09-22 Intel Corporation Design for flip chip joint pad/LGA pad
US5912282A (en) * 1996-12-16 1999-06-15 Shell Oil Company Die attach adhesive compositions
US5840215A (en) * 1996-12-16 1998-11-24 Shell Oil Company Anisotropic conductive adhesive compositions
US5760337A (en) * 1996-12-16 1998-06-02 Shell Oil Company Thermally reworkable binders for flip-chip devices
HUP9701377A3 (en) * 1997-01-15 2000-01-28 Ibm Case and method for mouting an ic chip onto a carrier board or similar
US6403882B1 (en) * 1997-06-30 2002-06-11 International Business Machines Corporation Protective cover plate for flip chip assembly backside
GB9814317D0 (en) * 1997-07-23 1998-09-02 Murata Manufacturing Co Ceramic electronic part and method for producing the same
US6326696B1 (en) 1998-02-04 2001-12-04 International Business Machines Corporation Electronic package with interconnected chips
US6177726B1 (en) * 1999-02-11 2001-01-23 Philips Electronics North America Corporation SiO2 wire bond insulation in semiconductor assemblies
US20020014688A1 (en) * 1999-03-03 2002-02-07 Suresh Ramalingam Controlled collapse chip connection (c4) integrated circuit package which has two dissimilar underfill materials
US6506448B1 (en) 1999-06-01 2003-01-14 Fry's Metals, Inc. Method of protective coating BGA solder alloy spheres
MY126046A (en) * 1999-07-08 2006-09-29 Sunstar Engineering Inc Underfilling material for semiconductor package
US6439698B1 (en) 2000-01-14 2002-08-27 Lexmark International, Inc Dual curable encapsulating material
JP3604988B2 (ja) 2000-02-14 2004-12-22 シャープ株式会社 半導体装置およびその製造方法
JP2001222751A (ja) * 2000-02-14 2001-08-17 Toshiba Electric Appliance Co Ltd 自動販売機温度制御装置
WO2002047114A2 (en) * 2000-10-11 2002-06-13 E.L. Specialists, Inc. Membranous el system in uv-cured urethane envelope
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US5390082A (en) 1995-02-14
CA2126121A1 (en) 1995-02-04
EP0637839B1 (de) 1999-05-12
KR0177138B1 (ko) 1999-03-20
EP0637839A2 (de) 1995-02-08
TW265464B (de) 1995-12-11
BR9402986A (pt) 1995-07-18
CN1228613A (zh) 1999-09-15
DE69418395D1 (de) 1999-06-17
MY112247A (en) 2001-05-31
EP0637839A3 (de) 1995-06-28
CN1142589C (zh) 2004-03-17
JP2723123B2 (ja) 1998-03-09
CN1103734A (zh) 1995-06-14
CA2126121C (en) 1997-09-16
KR950007621A (ko) 1995-03-21
JPH0778914A (ja) 1995-03-20
CN1051402C (zh) 2000-04-12

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