CN1051402C - 芯片载体 - Google Patents
芯片载体 Download PDFInfo
- Publication number
- CN1051402C CN1051402C CN94114984A CN94114984A CN1051402C CN 1051402 C CN1051402 C CN 1051402C CN 94114984 A CN94114984 A CN 94114984A CN 94114984 A CN94114984 A CN 94114984A CN 1051402 C CN1051402 C CN 1051402C
- Authority
- CN
- China
- Prior art keywords
- chip
- mentioned
- chip carrier
- coating
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000011253 protective coating Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 229910000679 solder Inorganic materials 0.000 claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000000565 sealant Substances 0.000 claims description 19
- 238000003466 welding Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 abstract description 31
- 239000008393 encapsulating agent Substances 0.000 abstract description 7
- 239000004593 Epoxy Substances 0.000 abstract description 5
- 238000000576 coating method Methods 0.000 description 64
- 239000011248 coating agent Substances 0.000 description 50
- 239000000178 monomer Substances 0.000 description 25
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 24
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 18
- 229910021529 ammonia Inorganic materials 0.000 description 18
- 238000012360 testing method Methods 0.000 description 16
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 14
- 239000000919 ceramic Substances 0.000 description 10
- 208000037656 Respiratory Sounds Diseases 0.000 description 9
- 230000007613 environmental effect Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 8
- 239000000945 filler Substances 0.000 description 7
- 229920000647 polyepoxide Polymers 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 6
- 230000002209 hydrophobic effect Effects 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000013508 migration Methods 0.000 description 5
- 230000005012 migration Effects 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 230000004087 circulation Effects 0.000 description 3
- 229920006332 epoxy adhesive Polymers 0.000 description 3
- 229920006334 epoxy coating Polymers 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- PSGCQDPCAWOCSH-UHFFFAOYSA-N (4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl) prop-2-enoate Chemical compound C1CC2(C)C(OC(=O)C=C)CC1C2(C)C PSGCQDPCAWOCSH-UHFFFAOYSA-N 0.000 description 2
- YIKSHDNOAYSSPX-UHFFFAOYSA-N 1-propan-2-ylthioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C=CC=C2C(C)C YIKSHDNOAYSSPX-UHFFFAOYSA-N 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- GWZMWHWAWHPNHN-UHFFFAOYSA-N 2-hydroxypropyl prop-2-enoate Chemical compound CC(O)COC(=O)C=C GWZMWHWAWHPNHN-UHFFFAOYSA-N 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000001617 migratory effect Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000002421 anti-septic effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000010504 bond cleavage reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000004836 empirical method Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 229940074869 marquis Drugs 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- VBUNOIXRZNJNAD-UHFFFAOYSA-N ponazuril Chemical compound CC1=CC(N2C(N(C)C(=O)NC2=O)=O)=CC=C1OC1=CC=C(S(=O)(=O)C(F)(F)F)C=C1 VBUNOIXRZNJNAD-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003878 thermal aging Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12033—Gunn diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Epoxy Resins (AREA)
Abstract
公开了一种芯片载体,具有面朝上安装在芯片载体基片的电路化表面上的半导体芯片,从芯片上方电路化表面的接触焊点延伸到基片电路化表面的接触焊点的引线,还包括覆盖至少部分基片电路化表面、至少部分引线和至少部分芯片的密封剂。密封剂的组分包括一种尿烷,且该组分要选得使密封剂在25℃时的弹性模数等于或小于69兆帕。
Description
这是由Brenda D.Frey、Charles A.joseph、Frances J.Olshefski和James W.Wilson于1992年7月6日提出的申请号为07/909368的美国申请的部分继续申请。
本发明通常涉及到芯片载体,更确切地说是带有至少部分地用紫外线辐照固化的保护涂层所覆盖的电路化表面的芯片载体。
半导体芯片封装件中有一种包括一个或更多的安装在衬底(例如陶瓷衬底或塑料衬底)的电路化表面上的半导体芯片。这种通常称为芯片载体的半导体芯片封装件一般是打算用来安装在插件电路板或印刷电路板上的。如果例如采用表面安装,则芯片载体通常包括一个机械连接和电连接于形成在衬底上带有芯片并电路化了的表面周围的电接触焊点的引线框或夹边部件。
欧洲专利申请EP447884A2中公开了一种半导体器件,它包括基座,IC器件,封装引线,内引线以及覆盖封装引线、内引线及IC器件的紫外线固化丙烯酸环氧树脂。但该EP申请根本未提及紫外线固化丙烯酸环氧树脂的关于柔韧性(即弹性模数)的特定性能。
以所谓的倒扣结构形式,在芯片载体衬底的电路化表面上,安装上一个或更多的半导体芯片,可以容易地获得相当高的芯片连接密度。在这种结构中,用焊球将芯片面朝下安装在衬底的可焊金属焊点上。然而,例如硅芯片的热膨胀系数(CTE)显著地不同于陶瓷衬底或塑料衬底的CTE。结果,只要芯片载体受到热起伏,焊球连接就会受到明显的应力,致使焊球连接的疲劳寿命减弱和降低。显然,采取将焊球包封在一种CTE在焊接球CTE的30%以内的密封剂中的办法,可以容易地克服这一问题。这种有用的密封剂的组分如美国专利4999699所公开的那样,包括譬如一种环氧粘合剂(如环脂肪族环氧化物粘合剂)和一种填料(如高纯熔融石英或非晶石英),上述专利公开已被列为本申请的引证。如本专利所指出,粘合剂在室温下的粘度应不大于约1000厘泊,而填充料的最大粒度应不大于31μm。而且,在粘合剂和填料二者的总重量中,粘合剂应占约60%-25%,而填料应占约40%-75%。
芯片载体衬底电路化表面上的电路,以及较小程度上说,以倒扣结构形式安装在电路化表面上的芯片,需要保护起来免受机械和环境的危害。为获得这种保护的一种技术是在芯片和电路化表面的至少一部分电路上,安装一个陶瓷帽。虽然使用这种陶瓷帽来获得机械和环境保护是有效的,但芯片载体的成本因此而显著增加。而且,陶瓷帽的存在妨碍了在芯片上直接安装热沉来发散芯片产生的热。相反,热沉必须安装在陶瓷帽上,并在每一芯片上表面和陶瓷帽之间必须有热润滑脂以便在芯片和热沉之间获得好的热接触。虽然这一方法对散热有效,但若能够将热沉直接安装在芯片上则更为方便。
已经提出:为了以相当低的成本来提供电路的机械和环境保护,可以用组分中包括环氧粘合剂和填料的涂层来覆盖芯片载体衬底电路化表面上的电路。这种填充的环氧涂层已用在芯片的上表面(不带电路),证明是有用的。但也认识到:这种填充的环氧涂层要用作芯片载体电路化表面上电路的保护涂层,必须:(1)能够经得住0-100℃之间,每小时三次的热循环至少2000次的标准加速老化测试,而不在它与焊球密封剂的交界面处出现内裂纹或裂纹,因为水和其它不希望的化学物质会钻入裂纹并腐蚀电路,这种裂纹是不希望有的;(2)由于上述理由,应是疏水的;(3)能够经得住通常称之谓“舰船冲击”(ship shock)的第二标准热循环测试而不出现裂纹也不从芯片载体衬底上剥离,上述测试中的涂层热循环为-40-+65℃、每小时一次,至少10个循环;(4)离子浓度低(典型地由确保氯离子浓度低于10PPM而获得)以避免电路腐蚀和导体迁移,后一现象会导致不希望的短路′以及(5)固化要相当快因而方便。
重要的是,当上述类型的填充环氧涂层从芯片载体电路化表面上芯片的上表面扩大到大尺寸(例如36mm×36mm)的芯片载体衬底电路化表面的电路时,这些涂层被证明是不能用的。亦即,当这些涂层经受上述的加速热老化测试时,在它们同焊球密封剂的交界面处总是出现内裂纹或裂纹。而且,当经受上述“舰船冲击”时,这些涂层总是从芯片载体衬底裂开或剥离。再者,这些涂层的固化要在炉中进行长时间(例如三小时)的烘焙,这样很费时间且不方便。
因此,从事芯片载体开发的人们都在寻求(迄今尚未成功)这样一种芯片载体电路化表面上电路的保护涂层:(1)相对不贵;(2)为对电路提供有效的机械和环境保护,要能够经得住标准热循环测试而不破裂也不剥离;(3)疏水的;(4)呈现低的离子浓度,以氯离子浓度低于10PPM为例;(5)固化相对快因而方便;以及(6)允许直接在芯片上安装热沉。
因此,本发明的目的是克服现有技术中的上述及其它缺陷。本发明的再一个目的是提供一种芯片载体,其上具有保护电路的涂层,该涂层可耐热循环测试而不会破裂或剥离,从而为电路系统提供有效的机械和环境保护。
本发明者发现用弹性模数相对高,即室温25C时弹性模数大于69兆帕的前述环氧涂层来作为芯片载体电路化表面上电路的保护层时,这些涂层缺乏承受与上述热循环测试相关的应力所要求的挠性,导致裂纹和剥层。
本发明还发现了一些组合物能够用紫外辐照相当快地(例如5秒之内)固化,以得到室温弹性模数等于或小于69兆帕的价格相对低的疏水涂层。这些组合物包括适当选择的和合适相对含量的丙烯酸盐聚氨(尿烷)低聚物、丙烯酸盐单体和光引发剂。这些涂层容易经得住热循环测试而不裂缝或剥层。此外,这些涂层的氯离子浓度低于10PPM,因而不引起离子诱导的腐蚀和迁移。而且,只要不将这些涂层加于电路化表面上芯片的上表面,则热沉可容易地直接安装在芯片上。
本发明的技术方案具体如下。
一种芯片载体,包含:
一个包括一带有电路的表面的基片,此电路至少有一个基片接触焊点;
至少有一个面朝上安装在上述基片表面的半导体芯片,上述半导体芯片包括一个带有电路的上表面,上述电路至少包括一个芯片接触焊点;
至少有一个从上述芯片接触焊点延伸到上述基片接触焊点的引线,此引线用来将前一种接触焊点电连接到后一种接触焊点;以及
一个至少覆盖并包封上述基片表面上的一部分上述电路以及上述引线的一部分的密封剂,
上述密封剂的组分包括一种尿烷,且上述组分要选得使上述密封剂在25℃时的弹性模数等于或小于69兆帕。
本发明将参照附图进行描述,在这些附图中:
图1是芯片载体的第一最佳实施例的剖面图,这一芯片载体包括一个以倒扣结构形式安装在芯片载体衬底电路化表面上的半导体芯片,以及一个至少覆盖一部分电路化表面的保护涂层;以及
图2是芯片载体的第二最佳实施例的剖面图,这一芯片载体包括一个面朝上安装在芯片载体衬底电路化表面上的半导体芯片,和一个至少覆盖一部分衬底电路化表面、一部分引线和一部分芯片的保护涂层,该半导体芯片带有从芯片的电路化上表面上的接触焊点延伸到衬底电路化表面上的接触点的引线。
本发明涉及到一种芯片载体,它包括一个带有电路化表面的芯片载体基片,例如一个陶瓷基片或一个塑料基片,该电路化表面上以倒扣形式至少安装有一个半导体芯片。至少在一个半导体芯片和芯片载体衬底之间的焊球连接被包封在密封剂中,密封剂的组分包括例如环氧树脂,其CTE在焊球CTE的30%以内。此外,电路化表面上至少一部分电路用相对不贵的保护涂层覆盖起来,根据本发明选择保护涂层以使其:(1)容易经得住上述的热循环测试,在10倍光学显微镜下观察时,涂层-焊球密封剂界面处不出现任何内裂纹或界面裂纹;(2)是疏水的;(3)氯离子浓度低于10PPM;(4)用紫外辐照可相当快和方便地固化;以及(5)允许将热沉直接安装在芯片上。
如图1所示,根据本发明的芯片载体10的第一最佳实施例包括一个基片20,例如一个氧化铝之类的陶瓷基片或一个塑料基片。此基片20有一个电路化的表面30,它包括例如铜的电路线(未绘出)和电连接焊点40。采用例如含3%(重量比)的锡和97%的铅的焊球60,至少有一个半导体芯片50(例如硅芯片)以倒扣的形式安装在电路化表面30上,为了加强并增加芯片50和基片20之间的焊球连接60的疲劳寿命,焊球60被包封在密封剂70中,密封剂的CTE在焊球60的CTE的30%以内。如美国专利4,999,699所公开,焊球密封剂70的组分包括一个例如环氧粘合剂(如环脂肪族聚环氧化物粘合剂)和一个填料(如高纯熔融或非晶石英)。
芯片载体10还包括一个例如铜的金属引线框即夹边部件80,它被机械和电连接到接触焊点40上,如S.R.Engle等人1992年2月18日提出的美国申请07/838,613所公开的(此公开已被列为本发明的引证),引线框或夹边部件80和接触焊点40之间的每一个机械/电连接包括一个焊区90,90的组分例如为10%的锡和90%的铅(重量比)。此外,接触焊点40和引线框或夹边部件80之间的每一个焊接连接至少要部分地,最好是全部地包封在材料100的区域中,重要的是,根据07/838,613专利申请的技术,材料区域100的组分要选得使焊区90和材料区100组合在经受0-100℃的正弦形热循环(每小时三次)至少2000次之后,焊接区90电阻的增加小于200mΩ。根据07/838,613专利申请,利用包含至少部分地填充的其CTE在焊接区90的CTE的±30%以内的环氧树脂的材料区100,可做到这一点。美国加州Dexter公司出售的商品名为HysolFP0045的石英填料部分填充的环己基二环氧化物树脂就是这样一种有用的环氧树脂。
根据本发明的技术,除接触焊点40外,被包封的焊球60以外的至少一部分,最好是全部电路化表面30上的电路都用涂层110覆盖并包封起来,110用来保护所覆盖的电路免受机械和环境危害。这个涂层110也接触到并至少部分地包围包封焊球60的密封剂70。如下面更深入的讨论,用来形成涂层110的组分是用注射器分配到电路化表面30上的,分配后容易在表面上流动以覆盖暴露的电路。此外,这一部分随后用紫外辐照很快且方便地固化。
根据本发明,分配来形成涂层110的组分包括三个部分:(1)丙烯酸盐聚氨低聚物;(2)丙烯酸盐单体;以及(3)光引发剂。丙烯酸盐聚氨低聚物的存在倾向于使相应的涂层110疏水。丙烯酸盐单体用作丙烯酸盐聚氨低聚物的稀释剂,并且当配制的组分经受紫外辐照时,与后者发生聚合物交键。光引发剂的存在使这种交键在紫外辐照的影响下成为可能。
多种丙烯酸盐聚氨低聚物、丙烯酸盐单体及光引发剂在本发明中都是有用的。在这方面已发现:主要是低聚物和单体的组合决定着相应涂层110的弹性。还发现:产生有用弹性的丙烯酸盐聚氨低聚物和丙烯酸盐单体组合可容易地由经验方法找到,即由这些低聚物和单体(以及光引发剂)形成混合物,用紫外辐照固化这些混合物,然后在室温下例如用常规的拉力实验测量得到的涂层110的弹性模数。若测得的模数等于或小于69兆帕,则对应的低聚物和单体的组合可用于本发明,至少就得到具有有用弹性性质的涂层110来说是这样。
还发现正是低聚物、单体和光引发剂决定着得到的涂层110中的氯离子的浓度从而也是离子诱导的腐蚀和迁移的程度。而且,用在芯片载体的电路化表面上形成相应的混合物、用紫外辐照固化这些混合物,然后测量得到的涂层防腐蚀的能力的方法,可以容易地凭经验找出低聚物、单体和光引发剂的有用组合。亦即,将涂层覆盖着的电路化表面在85℃和80%相对湿度下暴露于大气1000小时来确定腐蚀行为。任一电路线的直流电阻若增加一倍或更多,则表明有显著的腐蚀作用,并被认为不能用于本发明。将涂层覆盖着的电路化表面在85℃和80%相对湿度下暴露于大气,并在10V偏压下连续作用1000小时,来确定迁移行为。任何二个相邻电路线之间的直流电阻若小于10MQ,则表明有显著的迁移行为,并被认为不可用于本发明。
除了对离子诱导的腐蚀和迁移的要求外,可用于本发明的光引发剂必须在下述的强度和时间内能够使用的丙烯酸盐聚氨低聚物在紫外辐照下同有用的丙烯酸盐单体发生基本上完全的交键。利用先将一种光引发剂加到包括有用丙烯酸盐聚氨低聚物和有用丙烯酸单体的混合物中,再对得到的混合物进行下述强度和时间的紫外辐照以形成一个第一涂层样品的方法,可以容易地凭经验找出这种有用的光引发剂。这一第一涂层样品表现的断裂应力是衡量交键的程度,可以用例如常规拉力试验来测定。然后用另一混合物制作第二个这样的涂层样品,包括相同的低聚物、单体和光引发剂,相同的紫外辐照,相同的光强但暴露时间更长,或者光强更高而暴露时间相同。如果测得的第二涂层样品的断裂应力大于第一涂层样品,则表明第二涂层样品经历了附加的交键。另一方面,如果第二涂层样品的断裂应力不变,则认为第一涂层样品已达到完全的或基本完全的交键。倘若达到这种完全交键所需要的紫外辐照强度和暴露时间落在下述范围内,则对应的光引发剂可用于本发明。否则就不可用于本发明。
用上述办法发现依里诺斯州芝加哥的Morton国际公司出售的商品名为ZL2196和ZL1365是有用的丙烯酸盐聚氨低聚物。同样发现丙烯酸盐单体异冰片基丙烯酸脂和2-羟丙基丙烯酸脂同ZL2196或ZL1365丙烯酸盐聚氨低聚物组合起来可用于本发明。而且发现下列三种光引发剂与上述低聚物和单体的任一组合都是可用的:1)2-甲基-1-(4-(甲基硫)-苯基)-2-吗啉代丙酮′2)异丙基噻吨酮;以及3)2-羟基-2-甲基-1-苯基丙烷-1-酮。
如上所述,有用混合物的三组元的相对量也是重要的。例如,丙烯酸盐聚氨低聚物反应构成有用混合物的约35%-约75%(重量比),最好是约65%,小于约35%的量是不希望的,因为此时对应的涂层110的弹性模数大于69兆帕。且当经受上述热循环時出现内部和界面裂纹及剥离。另一方面,大于75%的量也不希望,因为对应的混合物的粘度太高,使得难以用注射器分配混合物并引起它在暴露的电路上流动太少。
丙烯酸盐单体应相应地占有用的混合物约63.5%-约22.5%(重量比)。由于上述的原因,超出此范围的量是不希望的。
光引发剂因而应占有用混合物的约1.5%-2.5%(重量比)。小于约1.5%的量是不希望的,因为它们引起低聚物和单体之间的交键不充分,大于约2.55的量是不必要的,因为2.5%足以达到完全交键。
如上述指出,上面定义的有用混合物用注射器可以容易地分配到衬底20的电路化表面30上。这些混合物容易流过表面30以覆盖暴露的电路,并在毛细作用的影响下,容易流上焊球密封剂70的侧面以覆盖和包围这一密封剂。
在分配之后,有用混合物可容易地用紫外辐照来固化。有用的紫外波长包括200-400纳米的频带。有用的紫外强度是约5.5-约6.5焦耳/cm2,相应的暴露时间为约5-约30秒。小于5.5焦耳/cm2的紫外强度是不希望的,因为这会引起低聚物同单体间的不充分的交键。大于6.5焦耳/cm2的紫外强度是不必要的,因为在较低的强度下就发生完全的交键,而且实际上太高的强度会导致断键,这是适得其反的。马里兰州Rockville的Fusion紫外处理系统公司出售的装备有厂家称之为D灯和H灯的紫外处理系统是能按上述强度和时间发射紫外辐照的市售紫外辐照源。
涂层110的厚度最好超过其下面被保护的电路约0.020英寸,虽然较厚的涂层是有用的,但上述的厚度可容易地获得有效的机械和环境保护。
在分配和固化有用混合物之后,如上所述,得到的涂层110可容易地经受住0-100℃、每小时变化三次的热循环至少2000次而不会在10倍光学显微镜观察时出现内部或界面裂纹。这一热循环当然是在带有控制系统的炉子中进行的,它较不完满地遵从上述的热循环指标。确切地说,实际上每一完整的热循环的周期都是20±2分钟而不是准确的20分钟。此外,从10℃到90℃的上升时间是6+3/-2分钟。而从90℃到10℃的下降时间也是6+3/-2分钟。而且炉子达到峰值温度100±10℃,对应的保持时间为4±2分钟。再者,炉子达到最低温度0±10℃,对应的保持时间也是4±2分钟。因此,为了本发明的目的,前者(完美的)热循环指标将被解释为意味着后者(实际的)热循环指标。
根据本发明形成的涂层110也容易经受住“舰船冲击”试验,此时涂层经受-40-+65℃、每小时循环一次的热循环至少10次,在10倍光学显微镜下观察不到从电路化表面30的剥层,也没有裂纹。如前一样,此“舰船冲击”试验是在备有控制系统的炉子中进行的。也不能完满地遵从“舰船冲击”热循环的指标。确切地说,实际上最低循环温度是-40-±5℃,而最高循环温度是65±5℃。此外,虽然总的热循环数至少为10,循环频率却是每小时1±0.1次而不是准确的每小时一次。而且,在最高和最低温度的保持时间是25±7分钟,而从最高和最低温度的温度升降速率是每分钟15℃。如前一样,为了本发明的目的,前者(完美的)热循环指标将被解释为意味着后者(实际的)热循环指标。
有用的混合物除用于电路化表面30外,也可利用注射器容易地用于芯片50的暴露的上表面,以便经紫外固化后形成一个保护芯片50和电路化表面30免受机械和环境危害的连续涂层。然而,如图1所示,只要芯片上表面上不形成涂层,则热沉120就可容易地直接安装在芯片50的上表面上。
重要的是发现上述本发明能够推广到相应的半导体芯片面朝上安装在芯片载体衬底电路化表面上而引线用来将芯片电路化上表面的接触焊点连接到芯片载体衬底电路化表面上的接触焊点的那种芯片载体。亦即如所知,用在这种芯片载体中的引线机械上是易碎的并在通常的处置中易断。因此,这些引线和芯片以及芯片载体衬底的电路化表面过去都用经固化的、其CTE相对接近引线CTE的石英填充环氧密封剂来覆盖并包封在其中。然而,由于要经数小时的热处理,这种环氧密封剂是有缺点的,而且价格相对昂贵。
如上面所提到的,发现上述芯片载体衬底的电路化表面、引线、以及芯片,很容易用上述可紫外固化的包含适当选取和相对含量适当的丙烯酸盐聚氨低聚物、丙烯酸盐单体和光引发剂的混合物来覆盖并包封在其中。如上所指出,这些混合物用紫外辐照可相当快地(如在5秒钟以内)固化以形成相对便宜的、室温(25℃)下弹性模数等于或小于69兆帕的疏水涂层。结果,即使在这些涂层(例如其CTE为200×10-6/℃)和引线(例如其CTE为14×10-6/℃)之间存在相当大的CTE失配,这些涂层也富有足够的弹性以致基本上吸收掉CTE失配引起的任何应力,这一应力不被吸收则会损伤引线。因此,这些涂层可容易地经受住上述的热循环测试而不发生裂纹和剥离,同时避免对引线的损伤,而且,这些涂层的氯离子浓度低于约10PPM,因而不会引起离子诱导的腐蚀和迁移。
现参照图2,根据本发明,芯片载体210的第二最佳实施例包括一个基片220(例如氧化铝基片之类的陶瓷基片或塑料基片)。此基片底220有一个电路化的表面230,230包括位于此表面内部邻近其周边的例如铜的电路线(未绘出)和电接触焊点240。在电路化表面230上至少面朝上安装有一个半导体芯片250(例如硅芯片)。半导体芯片250的上表面255本身带有电路,例如集成电路,包括有电路线(未绘出)和接触焊点(未绘出)。从芯片接触焊点延伸到基片电路化表面230内的接触焊点的金引线将前者焊点连接到后者焊点。
芯片载体210也包括一个例如铜的金属夹边部件即引线框280,它机械和电连接到位于衬底电路化表面230的外围附近的衬底接触焊点240。用这一夹边部件或引线框,可将表面安装到印刷电路板400上,此外,如美国申请07/838,613所公开的,夹边部件或引线框280和衬底接触焊点240之间的每一个机械/电连接都包括一个焊接区290,其混含物包括例如10%的锡和90%的铅(重量比)。此外,衬底接触焊点240和夹边部件或引线框280之间和每一个焊接都至少部分地(最好是全部地)包封在材料区300之中。而且,根据07/838,613专利申请所述,材料300选取组分时要使焊接区290和材料区300的组分在经受0-100C每小时三次循环的正弦形热循环至少2000次的时侯,焊接区290的电阻增加小于200MΩ,如前面一样,采用含有一个CTE为焊接区290CTE的±30%之内的至少部分被填充的环氧脂材料区300,就可做到这一点。还如前面一样,美国加州Dexter公司出售的商品名为HysolFP0045的部分填充以石英填料的环己基二环氧化物树脂就是这样一种有用的环氧树脂。
根据本发明的技术,除了位于衬底电路化表面230外周边附近的衬底接触焊点240之外,衬底电路化表面230上至少一部分(最好全部)电路用第一涂层310覆盖并包封在其中,第一涂层310用来保护衬底电路免受机械和环境危害。用来形成涂层310的混合物容易用注射器分配,并在衬底电路化表面230上容易流动以覆盖暴露的电路。这种混合物然后用紫外辐照相当快且方便地固化。涂层310的厚度最好超过其下被保护的电路的厚度约0.381mm。这样,若被保护的电路的厚度为例如0.0254mm,则涂层310的厚度为0.4064mm。
主要想用来包封衬底表面电路的涂层310的厚度 通常只够包封引线260的下部,而不足以包封半导体芯片250的上表面或在上表面255上延伸的引线260的上部。因此,具有同第一涂层310相同的组分的第二涂层320,在第一涂层被涂布并紫外固化之后,被用来覆盖并包封上表面255和引线260的上部。如第一涂层310那样,第二涂层混合物容易用注射器分配,并在半导体芯片250的上表面255上和引线260的上部上易于流动。第二涂层混合物也用紫外辐照相当快且方便地固化。这一第二涂层的厚度最好超过引线高度至少0.0508mm。这样,若半导体芯片250的厚度为例如0.635mm,且引线的顶部在上表面255之上0.381mm延伸,则第二涂层320的厚度为0.6604mm(考虑了第一涂层的厚度)。
如第一最佳实施例一样,用来形成第二最佳实施例的涂层310和320的混合物包括三个组元:(1)丙烯酸盐聚氨低聚物;(2)丙烯酸盐单体;以及(3)光引发剂。如同第一最佳实施例,各种丙烯酸盐聚氨低聚物,丙烯酸盐单体和光引发剂在第二最佳实施例中都是有用的。在这方面,用来寻找第二最佳实施例中有用的丙烯酸盐聚氨低聚物、丙烯酸盐单体和光引发剂的方法同上述第一最佳实施例所用的方法完全相同。实际上,前面发现可用于第一最佳实施例的所有混合物,也可用于第二最佳实施例。于是,依利诺斯州芝加哥Morton国际公司出售的商品名为ZL2196和ZL1365的丙烯酸盐聚氨低聚物都可用于第二最佳实施例。此外,丙烯酸盐单体异冰片基丙烯酸脂和2-羟丙基丙烯酸脂同ZL2196或ZL1365丙烯酸盐聚氨低聚物组合起来,同第一最佳实施例那样,也可用于第二最佳实施例。而且,如第一最佳实施例即样,发现下列三种光引发剂与上述低聚物和单体的任一组合,也可用于第二最佳实施例:
(1)2-甲基-1-(4-(甲基硫)-苯基-2-吗啉代丙酮;
(2)异丙基噻吨酮;以及
(3)2-羟基-2-甲基-1-苯基丙烷-1-酮。
对于第二最佳实施例,有用丙烯酸盐聚氨低聚物、丙烯酸盐单体和光引发剂的相对含量,为了上述的理由而与上述给定的一样,而且,有用的紫外波长、强度和暴露时间也与上述所给定的一样。
必须强调的是,当如上述即样选择和固化时,涂层310和320容易经受上述的加速热老化试验和“舰船冲击”试验,在10倍光学显微镜下观察不到裂纹和剥离。此外,这些涂层可经得住这些试验而不损伤引线260。
虽然已参照最佳实施例对本发明进行了具体的描述,对熟悉本领域的技术人员来说,应该理解:在不超过本发明的构思与范围的情况下,可以做各种形式和细节的改变。
Claims (2)
1、一种芯片载体,其特征是包含:
一个包括一带有电路的表面的基片,此电路至少有一个基片接触焊点;
至少有一个面朝上安装在上述基片表面的半导体芯片,上述半导体芯片包括一个带有电路的上表面,上述电路至少包括一个芯片接触焊点;
至少有一个从上述芯片接触焊点延伸到上述基片接触焊点的引线,此引线用来将前一种接触焊点电连接到后一种接触焊点;以及
一个至少覆盖并包封上述基片表面上的一部分上述电路以及上述引线的一部分的密封剂,其特征是,
上述密封剂的组分包括一种尿烷,且上述组分要选得使上述密封剂在25℃时的弹性模数等于或小于69兆帕。
2、如权利要求1的芯片载体,其特征是:上述密封剂也覆盖并包封上述半导体芯片上表面的至少一部分。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US101168 | 1993-08-03 | ||
US101,168 | 1993-08-03 | ||
US08/101,168 US5390082A (en) | 1992-07-06 | 1993-08-03 | Chip carrier with protective coating for circuitized surface |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB991018915A Division CN1142589C (zh) | 1993-08-03 | 1994-07-28 | 芯片载体 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1103734A CN1103734A (zh) | 1995-06-14 |
CN1051402C true CN1051402C (zh) | 2000-04-12 |
Family
ID=22283349
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB991018915A Expired - Fee Related CN1142589C (zh) | 1993-08-03 | 1994-07-28 | 芯片载体 |
CN94114984A Expired - Fee Related CN1051402C (zh) | 1993-08-03 | 1994-07-28 | 芯片载体 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB991018915A Expired - Fee Related CN1142589C (zh) | 1993-08-03 | 1994-07-28 | 芯片载体 |
Country Status (10)
Country | Link |
---|---|
US (1) | US5390082A (zh) |
EP (1) | EP0637839B1 (zh) |
JP (1) | JP2723123B2 (zh) |
KR (1) | KR0177138B1 (zh) |
CN (2) | CN1142589C (zh) |
BR (1) | BR9402986A (zh) |
CA (1) | CA2126121C (zh) |
DE (1) | DE69418395T2 (zh) |
MY (1) | MY112247A (zh) |
TW (1) | TW265464B (zh) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2643074B2 (ja) * | 1993-03-17 | 1997-08-20 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 電気的接続構造 |
US5554821A (en) * | 1994-07-15 | 1996-09-10 | National Semiconductor Corporation | Removable computer peripheral cards having a solid one-piece housing |
US6150716A (en) * | 1995-01-25 | 2000-11-21 | International Business Machines Corporation | Metal substrate having an IC chip and carrier mounting |
US5677511A (en) * | 1995-03-20 | 1997-10-14 | National Semiconductor Corporation | Overmolded PC board with ESD protection and EMI suppression |
AU7096696A (en) | 1995-11-28 | 1997-06-19 | Hitachi Limited | Semiconductor device, process for producing the same, and packaged substrate |
US5851311A (en) * | 1996-03-29 | 1998-12-22 | Sophia Systems Co., Ltd. | Polymerizable flux composition for encapsulating the solder in situ |
KR100386018B1 (ko) * | 1996-06-24 | 2003-08-25 | 인터내셔널 비지네스 머신즈 코포레이션 | 스택형반도체디바이스패키지 |
US5811883A (en) * | 1996-09-30 | 1998-09-22 | Intel Corporation | Design for flip chip joint pad/LGA pad |
US5840215A (en) * | 1996-12-16 | 1998-11-24 | Shell Oil Company | Anisotropic conductive adhesive compositions |
US5760337A (en) * | 1996-12-16 | 1998-06-02 | Shell Oil Company | Thermally reworkable binders for flip-chip devices |
US5912282A (en) * | 1996-12-16 | 1999-06-15 | Shell Oil Company | Die attach adhesive compositions |
HUP9701377A3 (en) * | 1997-01-15 | 2000-01-28 | Ibm | Case and method for mouting an ic chip onto a carrier board or similar |
US6403882B1 (en) * | 1997-06-30 | 2002-06-11 | International Business Machines Corporation | Protective cover plate for flip chip assembly backside |
GB9814317D0 (en) * | 1997-07-23 | 1998-09-02 | Murata Manufacturing Co | Ceramic electronic part and method for producing the same |
US6326696B1 (en) | 1998-02-04 | 2001-12-04 | International Business Machines Corporation | Electronic package with interconnected chips |
US6177726B1 (en) * | 1999-02-11 | 2001-01-23 | Philips Electronics North America Corporation | SiO2 wire bond insulation in semiconductor assemblies |
US20020014688A1 (en) * | 1999-03-03 | 2002-02-07 | Suresh Ramalingam | Controlled collapse chip connection (c4) integrated circuit package which has two dissimilar underfill materials |
US6506448B1 (en) | 1999-06-01 | 2003-01-14 | Fry's Metals, Inc. | Method of protective coating BGA solder alloy spheres |
DE60025489T2 (de) * | 1999-07-08 | 2006-08-03 | Sunstar Giken K.K., Takatsuki | Unterfüllmaterial für halbleitergehäuse |
US6439698B1 (en) | 2000-01-14 | 2002-08-27 | Lexmark International, Inc | Dual curable encapsulating material |
JP3604988B2 (ja) | 2000-02-14 | 2004-12-22 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2001222751A (ja) * | 2000-02-14 | 2001-08-17 | Toshiba Electric Appliance Co Ltd | 自動販売機温度制御装置 |
CN1310573C (zh) * | 2000-10-11 | 2007-04-11 | 奥尔约恩有限责任公司 | 在uv固化氨基甲酸乙酯封套中的膜状el装置 |
US6425655B1 (en) | 2001-06-05 | 2002-07-30 | Lexmark International, Inc. | Dual curable encapsulating material |
EP1424728A1 (de) * | 2002-11-27 | 2004-06-02 | Abb Research Ltd. | Leistungshalbleitermodul |
JP2005002335A (ja) * | 2003-05-21 | 2005-01-06 | Japan Gore Tex Inc | 接着フィルムおよびこれを使った半導体装置 |
JP4378239B2 (ja) * | 2004-07-29 | 2009-12-02 | 株式会社日立製作所 | 半導体装置及びそれを使用した電力変換装置並びにこの電力変換装置を用いたハイブリッド自動車。 |
US8710618B2 (en) | 2007-03-12 | 2014-04-29 | Honeywell International Inc. | Fibrous laminate interface for security coatings |
US8957509B2 (en) * | 2011-06-23 | 2015-02-17 | Stats Chippac Ltd. | Integrated circuit packaging system with thermal emission and method of manufacture thereof |
US9064820B2 (en) | 2012-04-05 | 2015-06-23 | Mekiec Manufacturing Corporation (Thailand) Ltd | Method and encapsulant for flip-chip assembly |
JP6386746B2 (ja) * | 2014-02-26 | 2018-09-05 | 株式会社ジェイデバイス | 半導体装置 |
CN116536155B (zh) * | 2023-05-17 | 2024-04-09 | 扬州大学 | 一种芯片培养装置及其使用方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0447884A2 (en) * | 1990-03-23 | 1991-09-25 | Motorola, Inc. | Semiconductor device having a low temperature UV-cured epoxy seal and method for making the same |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4300184A (en) * | 1979-07-11 | 1981-11-10 | Johnson Controls, Inc. | Conformal coating for electrical circuit assemblies |
JPS6018145B2 (ja) * | 1980-09-22 | 1985-05-09 | 株式会社日立製作所 | 樹脂封止型半導体装置 |
US4546283A (en) * | 1984-05-04 | 1985-10-08 | The United States Of America As Represented By The Secretary Of The Air Force | Conductor structure for thick film electrical device |
JPS6167246A (ja) * | 1984-09-10 | 1986-04-07 | Nec Corp | 混成集積回路装置 |
DE3442131A1 (de) * | 1984-11-17 | 1986-05-22 | Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn | Verfahren zum einkapseln von mikroelektronischen halbleiter- und schichtschaltungen |
US4623559A (en) * | 1985-07-12 | 1986-11-18 | Westinghouse Electric Corp. | U.V. cured flexible polyester-monoacrylate protective thermistor coatings having good edge coverage and method of coating |
EP0340492A3 (en) * | 1988-05-02 | 1990-07-04 | International Business Machines Corporation | Conformal sealing and interplanar encapsulation of electronic device structures |
US5121190A (en) * | 1990-03-14 | 1992-06-09 | International Business Machines Corp. | Solder interconnection structure on organic substrates |
US4999699A (en) * | 1990-03-14 | 1991-03-12 | International Business Machines Corporation | Solder interconnection structure and process for making |
US5173766A (en) * | 1990-06-25 | 1992-12-22 | Lsi Logic Corporation | Semiconductor device package and method of making such a package |
US5185498A (en) * | 1991-06-11 | 1993-02-09 | Delco Electronics Corporation | Circuit assembly encapsulated with polybutadiene urethane |
US5194027A (en) * | 1991-09-09 | 1993-03-16 | Planar Systems, Inc. | Solid seal for thin film electroluminescent display panels |
US5243133A (en) * | 1992-02-18 | 1993-09-07 | International Business Machines, Inc. | Ceramic chip carrier with lead frame or edge clip |
US5249101A (en) * | 1992-07-06 | 1993-09-28 | International Business Machines Corporation | Chip carrier with protective coating for circuitized surface |
-
1993
- 1993-08-03 US US08/101,168 patent/US5390082A/en not_active Expired - Fee Related
-
1994
- 1994-06-17 CA CA002126121A patent/CA2126121C/en not_active Expired - Fee Related
- 1994-07-07 EP EP94480061A patent/EP0637839B1/en not_active Expired - Lifetime
- 1994-07-07 DE DE69418395T patent/DE69418395T2/de not_active Expired - Fee Related
- 1994-07-20 JP JP6168058A patent/JP2723123B2/ja not_active Expired - Lifetime
- 1994-07-27 MY MYPI94001948A patent/MY112247A/en unknown
- 1994-07-28 KR KR1019940018371A patent/KR0177138B1/ko not_active IP Right Cessation
- 1994-07-28 BR BR9402986A patent/BR9402986A/pt not_active Application Discontinuation
- 1994-07-28 CN CNB991018915A patent/CN1142589C/zh not_active Expired - Fee Related
- 1994-07-28 CN CN94114984A patent/CN1051402C/zh not_active Expired - Fee Related
- 1994-07-30 TW TW083106990A patent/TW265464B/zh active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0447884A2 (en) * | 1990-03-23 | 1991-09-25 | Motorola, Inc. | Semiconductor device having a low temperature UV-cured epoxy seal and method for making the same |
Also Published As
Publication number | Publication date |
---|---|
KR0177138B1 (ko) | 1999-03-20 |
KR950007621A (ko) | 1995-03-21 |
MY112247A (en) | 2001-05-31 |
EP0637839B1 (en) | 1999-05-12 |
DE69418395D1 (de) | 1999-06-17 |
EP0637839A3 (en) | 1995-06-28 |
DE69418395T2 (de) | 1999-12-16 |
CA2126121C (en) | 1997-09-16 |
BR9402986A (pt) | 1995-07-18 |
CN1103734A (zh) | 1995-06-14 |
CN1142589C (zh) | 2004-03-17 |
TW265464B (zh) | 1995-12-11 |
CN1228613A (zh) | 1999-09-15 |
CA2126121A1 (en) | 1995-02-04 |
EP0637839A2 (en) | 1995-02-08 |
JP2723123B2 (ja) | 1998-03-09 |
JPH0778914A (ja) | 1995-03-20 |
US5390082A (en) | 1995-02-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1051402C (zh) | 芯片载体 | |
JP2501287B2 (ja) | 回路化表面に保護コ―ティングを施したチップ・キャリア | |
US9196555B1 (en) | Integrated circuit protection and ruggedization coatings and methods | |
JP2012019062A (ja) | 発光半導体装置、実装基板及びそれらの製造方法 | |
US8217275B2 (en) | Sealing material and mounting method using the sealing material | |
US4906596A (en) | Die attach adhesive composition | |
JP2009542007A (ja) | セラミックmcmのc4の保護のための新規な再加工可能なアンダーフィル | |
EP1694769A1 (en) | Dual-stage wafer applied underfills | |
EP0407585A1 (en) | Semiconductor device sealed with resin and a method of producing the same | |
Tong et al. | Conductive adhesives with stable contact resistance and superior impact performance | |
EP0469614B1 (en) | Flip-chip semiconductor device | |
JP4525139B2 (ja) | 半導体封止用エポキシ樹脂組成物の製造方法。 | |
EP0317694A1 (en) | Die attach adhesive composition | |
JP5105099B2 (ja) | 半導体封止用液状エポキシ樹脂組成物、及びそれをアンダーフィル材として用いて封止したフリップチップ型半導体装置 | |
CA1250602A (en) | Sealing glass composite | |
EP1291909B1 (en) | Method of making a semiconductor device | |
JP3214266B2 (ja) | 半導体封止用エポキシ樹脂組成物及び半導体装置 | |
EP0670595B1 (en) | Resin-sealed semiconductor device | |
JPH05175262A (ja) | 樹脂封止型半導体装置 | |
Pecht et al. | Failures in electronic assemblies and devices | |
Adamson | Lead-free packaging for discrete power semiconductors | |
JPH09172110A (ja) | 半導体装置 | |
CA1304172C (en) | Metal electronic package | |
JPH09237862A (ja) | 樹脂密着性に優れたリードフレーム材及び半導体装置 | |
TW202300553A (zh) | 底部充填膠材料 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C19 | Lapse of patent right due to non-payment of the annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |