DE69411861T2 - Photoelektrische Wandlervorrichtung aus polykrystallinem Silicon und Verfahren zur Herstellung - Google Patents
Photoelektrische Wandlervorrichtung aus polykrystallinem Silicon und Verfahren zur HerstellungInfo
- Publication number
- DE69411861T2 DE69411861T2 DE69411861T DE69411861T DE69411861T2 DE 69411861 T2 DE69411861 T2 DE 69411861T2 DE 69411861 T DE69411861 T DE 69411861T DE 69411861 T DE69411861 T DE 69411861T DE 69411861 T2 DE69411861 T2 DE 69411861T2
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- photoelectric conversion
- conversion device
- polycrystalline silicone
- polycrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000006243 chemical reaction Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 229920001296 polysiloxane Polymers 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
- H01L31/1824—Special manufacturing methods for microcrystalline Si, uc-Si
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/545—Microcrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29981893 | 1993-11-30 | ||
JP29140794A JP3478618B2 (ja) | 1993-11-30 | 1994-11-25 | 光電変換素子及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69411861D1 DE69411861D1 (de) | 1998-08-27 |
DE69411861T2 true DE69411861T2 (de) | 1999-01-21 |
Family
ID=26558535
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69411861T Expired - Fee Related DE69411861T2 (de) | 1993-11-30 | 1994-11-29 | Photoelektrische Wandlervorrichtung aus polykrystallinem Silicon und Verfahren zur Herstellung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5575862A (de) |
EP (1) | EP0656664B1 (de) |
JP (1) | JP3478618B2 (de) |
DE (1) | DE69411861T2 (de) |
ES (1) | ES2122132T3 (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7075002B1 (en) | 1995-03-27 | 2006-07-11 | Semiconductor Energy Laboratory Company, Ltd. | Thin-film photoelectric conversion device and a method of manufacturing the same |
JP3616785B2 (ja) | 1996-09-19 | 2005-02-02 | キヤノン株式会社 | 太陽電池の製造方法 |
US6391108B2 (en) | 1997-12-12 | 2002-05-21 | Canon Kabushiki Kaisha | Liquid phase growth method of silicon crystal, method of producing solar cell, and liquid phase growth apparatus |
US6303945B1 (en) * | 1998-03-16 | 2001-10-16 | Canon Kabushiki Kaisha | Semiconductor element having microcrystalline semiconductor material |
JP2001160540A (ja) | 1999-09-22 | 2001-06-12 | Canon Inc | 半導体装置の製造方法、液相成長法及び液相成長装置、太陽電池 |
JP2001094136A (ja) | 1999-09-22 | 2001-04-06 | Canon Inc | 半導体素子モジュールの製造方法および太陽電池モジュールの製造方法 |
US6551908B2 (en) | 2000-10-02 | 2003-04-22 | Canon Kabushiki Kaisha | Method for producing semiconductor thin films on moving substrates |
JP2004128060A (ja) * | 2002-09-30 | 2004-04-22 | Canon Inc | シリコン膜の成長方法、太陽電池の製造方法、半導体基板及び太陽電池 |
JP3978494B2 (ja) * | 2003-06-12 | 2007-09-19 | 国立大学法人東北大学 | Si薄膜の作製方法 |
JP2005079122A (ja) * | 2003-08-29 | 2005-03-24 | Rikogaku Shinkokai | 結晶性薄膜の作製方法 |
US20060049464A1 (en) | 2004-09-03 | 2006-03-09 | Rao G R Mohan | Semiconductor devices with graded dopant regions |
US20070044832A1 (en) * | 2005-08-25 | 2007-03-01 | Fritzemeier Leslie G | Photovoltaic template |
WO2009013914A1 (ja) * | 2007-07-26 | 2009-01-29 | Ecotron Co., Ltd. | SiCエピタキシャル基板およびその製造方法 |
US20090114274A1 (en) * | 2007-11-02 | 2009-05-07 | Fritzemeier Leslie G | Crystalline thin-film photovoltaic structures |
US20090255574A1 (en) * | 2008-04-14 | 2009-10-15 | Sierra Solar Power, Inc. | Solar cell fabricated by silicon liquid-phase deposition |
US8236603B1 (en) | 2008-09-04 | 2012-08-07 | Solexant Corp. | Polycrystalline semiconductor layers and methods for forming the same |
GB2466496A (en) * | 2008-12-23 | 2010-06-30 | Univ Bolton | Photovoltaic cell based on transition metal oxides of varied band gaps and p/n types |
WO2010088366A1 (en) | 2009-01-28 | 2010-08-05 | Wakonda Technologies, Inc. | Large-grain crystalline thin-film structures and devices and methods for forming the same |
US7858427B2 (en) * | 2009-03-03 | 2010-12-28 | Applied Materials, Inc. | Crystalline silicon solar cells on low purity substrate |
FR2971086B1 (fr) * | 2011-01-31 | 2014-04-18 | Inst Polytechnique Grenoble | Structure adaptee a la formation de cellules solaires |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2047955B (en) * | 1976-07-06 | 1983-11-02 | Boeing Co | Continous process for fabricating solar cells |
US4124410A (en) * | 1977-11-21 | 1978-11-07 | Union Carbide Corporation | Silicon solar cells with low-cost substrates |
JPS5861681A (ja) * | 1981-10-07 | 1983-04-12 | Matsushita Electric Ind Co Ltd | 太陽電池 |
US4571448A (en) * | 1981-11-16 | 1986-02-18 | University Of Delaware | Thin film photovoltaic solar cell and method of making the same |
JPS59121829A (ja) * | 1982-12-28 | 1984-07-14 | Agency Of Ind Science & Technol | 単結晶シリコン薄膜の製造方法 |
US5057163A (en) * | 1988-05-04 | 1991-10-15 | Astropower, Inc. | Deposited-silicon film solar cell |
JP2849388B2 (ja) * | 1988-06-10 | 1999-01-20 | 三井化学株式会社 | 積層導電膜 |
JP2779033B2 (ja) * | 1990-02-02 | 1998-07-23 | 三菱電機株式会社 | 多結晶Si薄膜の成長方法 |
JPH04133356A (ja) * | 1990-09-25 | 1992-05-07 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
JPH05129639A (ja) * | 1991-01-14 | 1993-05-25 | Mitsubishi Electric Corp | 太陽電池及びその製造方法 |
JPH05235391A (ja) * | 1991-03-07 | 1993-09-10 | Mitsubishi Electric Corp | 薄膜太陽電池及びその製造方法並びに半導体装置の製造方法 |
US5455430A (en) * | 1991-08-01 | 1995-10-03 | Sanyo Electric Co., Ltd. | Photovoltaic device having a semiconductor grade silicon layer formed on a metallurgical grade substrate |
JPH0690013A (ja) * | 1992-09-08 | 1994-03-29 | Mitsubishi Electric Corp | 薄膜太陽電池及び太陽電池の製造方法並びに半導体インゴットの製造方法及び半導体基板の製造方法 |
-
1994
- 1994-11-25 JP JP29140794A patent/JP3478618B2/ja not_active Expired - Fee Related
- 1994-11-29 EP EP94118764A patent/EP0656664B1/de not_active Expired - Lifetime
- 1994-11-29 ES ES94118764T patent/ES2122132T3/es not_active Expired - Lifetime
- 1994-11-29 DE DE69411861T patent/DE69411861T2/de not_active Expired - Fee Related
- 1994-11-30 US US08/352,034 patent/US5575862A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
ES2122132T3 (es) | 1998-12-16 |
JPH07211931A (ja) | 1995-08-11 |
EP0656664A1 (de) | 1995-06-07 |
DE69411861D1 (de) | 1998-08-27 |
US5575862A (en) | 1996-11-19 |
EP0656664B1 (de) | 1998-07-22 |
JP3478618B2 (ja) | 2003-12-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |