ES2122132T3 - Transductor fotoelectrico de silicio policristalino y procedimiento para su fabricacion. - Google Patents

Transductor fotoelectrico de silicio policristalino y procedimiento para su fabricacion.

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Publication number
ES2122132T3
ES2122132T3 ES94118764T ES94118764T ES2122132T3 ES 2122132 T3 ES2122132 T3 ES 2122132T3 ES 94118764 T ES94118764 T ES 94118764T ES 94118764 T ES94118764 T ES 94118764T ES 2122132 T3 ES2122132 T3 ES 2122132T3
Authority
ES
Spain
Prior art keywords
layer
silicon
polycrystalline silicon
metal
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES94118764T
Other languages
English (en)
Inventor
Shoji Nishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of ES2122132T3 publication Critical patent/ES2122132T3/es
Anticipated expiration legal-status Critical
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • H01L31/1824—Special manufacturing methods for microcrystalline Si, uc-Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

ESTA INVENCION SE REFIERE A UNA CELULA SOLAR DE SILICIO POLICRISTALINO NO CARA QUE TIENE UNA CAPA SEMICONDUCTORA POLICRISTALINA DE GRAN DIMENSION DE GRANO CULTIVADA SOBRE UN SUSTRATO DE SILICIO DE NIVEL DE METAL DE BAJO COSTE, Y UN PROCESO PARA SU PRODUCCION. LA CELULA SOLAR DE SILICIO POLICRISTALINO COMPRENDE UN SUSTRATO DE SILICIO DE NIVEL DE METAL 101, UNA CAPA DE OXIDO DE METAL 102 FORMADA SOBRE ESTA Y UNA CAPA DE SILICIO POLICRISTALINO 105 FORMADO SOBRE LA CAPA DE OXIDO DE METAL. EL PROCESO PARA PRODUCIR LA CELULA SOLAR DE SILICIO POLICRISTALINO COMPRENDE LOS PASOS DE I) DEPOSICION DE CAPA DE OXIDO DE METAL 102 SOBRE UN SUSTRATO DE SILICOI DE NIVEL DE METAL 101, II) DEPOSICION D UNA CAPA DE SILICIO 103 SOBRE LA SUPERFICIE DE LA CAPA DE OXIDO DE METAL, III) DEPOSICION DE UNA CAPA DE TAPA 104 SOBRE LA SUPERFICIE DE LA CAPA DE SILICIO Y FUSION DE LA CAPA DE SILICIO CALENTADO DESDE LA PARTE DE LA CAPA DE TAPA, SEGUIDA DE LA SOLIDIFICACION PARA FORMAR UNA CAPA DE SILICIO POLICRISTALINO, Y IV) ELIMINACION DE LA CAPA DE TAPA Y FORMACION DE UNA UNION SEMICONDUCTORA SOBRE LA SUPERFICIE DE LA CAPA DE SILICIO POLICRISTALINO.
ES94118764T 1993-11-30 1994-11-29 Transductor fotoelectrico de silicio policristalino y procedimiento para su fabricacion. Expired - Lifetime ES2122132T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP29981893 1993-11-30
JP29140794A JP3478618B2 (ja) 1993-11-30 1994-11-25 光電変換素子及びその製造方法

Publications (1)

Publication Number Publication Date
ES2122132T3 true ES2122132T3 (es) 1998-12-16

Family

ID=26558535

Family Applications (1)

Application Number Title Priority Date Filing Date
ES94118764T Expired - Lifetime ES2122132T3 (es) 1993-11-30 1994-11-29 Transductor fotoelectrico de silicio policristalino y procedimiento para su fabricacion.

Country Status (5)

Country Link
US (1) US5575862A (es)
EP (1) EP0656664B1 (es)
JP (1) JP3478618B2 (es)
DE (1) DE69411861T2 (es)
ES (1) ES2122132T3 (es)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7075002B1 (en) 1995-03-27 2006-07-11 Semiconductor Energy Laboratory Company, Ltd. Thin-film photoelectric conversion device and a method of manufacturing the same
JP3616785B2 (ja) 1996-09-19 2005-02-02 キヤノン株式会社 太陽電池の製造方法
US6391108B2 (en) 1997-12-12 2002-05-21 Canon Kabushiki Kaisha Liquid phase growth method of silicon crystal, method of producing solar cell, and liquid phase growth apparatus
US6303945B1 (en) * 1998-03-16 2001-10-16 Canon Kabushiki Kaisha Semiconductor element having microcrystalline semiconductor material
JP2001160540A (ja) 1999-09-22 2001-06-12 Canon Inc 半導体装置の製造方法、液相成長法及び液相成長装置、太陽電池
JP2001094136A (ja) 1999-09-22 2001-04-06 Canon Inc 半導体素子モジュールの製造方法および太陽電池モジュールの製造方法
US6551908B2 (en) 2000-10-02 2003-04-22 Canon Kabushiki Kaisha Method for producing semiconductor thin films on moving substrates
JP2004128060A (ja) * 2002-09-30 2004-04-22 Canon Inc シリコン膜の成長方法、太陽電池の製造方法、半導体基板及び太陽電池
JP3978494B2 (ja) * 2003-06-12 2007-09-19 国立大学法人東北大学 Ｓｉ薄膜の作製方法
JP2005079122A (ja) * 2003-08-29 2005-03-24 Rikogaku Shinkokai 結晶性薄膜の作製方法
US20060049464A1 (en) 2004-09-03 2006-03-09 Rao G R Mohan Semiconductor devices with graded dopant regions
US20070044832A1 (en) * 2005-08-25 2007-03-01 Fritzemeier Leslie G Photovoltaic template
WO2009013914A1 (ja) * 2007-07-26 2009-01-29 Ecotron Co., Ltd. ＳｉＣエピタキシャル基板およびその製造方法
US20090114274A1 (en) * 2007-11-02 2009-05-07 Fritzemeier Leslie G Crystalline thin-film photovoltaic structures
US20090255574A1 (en) * 2008-04-14 2009-10-15 Sierra Solar Power, Inc. Solar cell fabricated by silicon liquid-phase deposition
US8236603B1 (en) 2008-09-04 2012-08-07 Solexant Corp. Polycrystalline semiconductor layers and methods for forming the same
GB2466496A (en) * 2008-12-23 2010-06-30 Univ Bolton Photovoltaic cell based on transition metal oxides of varied band gaps and p/n types
WO2010088366A1 (en) 2009-01-28 2010-08-05 Wakonda Technologies, Inc. Large-grain crystalline thin-film structures and devices and methods for forming the same
US7858427B2 (en) * 2009-03-03 2010-12-28 Applied Materials, Inc. Crystalline silicon solar cells on low purity substrate
FR2971086B1 (fr) * 2011-01-31 2014-04-18 Inst Polytechnique Grenoble Structure adaptee a la formation de cellules solaires

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GB2047955B (en) * 1976-07-06 1983-11-02 Boeing Co Continous process for fabricating solar cells
US4124410A (en) * 1977-11-21 1978-11-07 Union Carbide Corporation Silicon solar cells with low-cost substrates
JPS5861681A (ja) * 1981-10-07 1983-04-12 Matsushita Electric Ind Co Ltd 太陽電池
US4571448A (en) * 1981-11-16 1986-02-18 University Of Delaware Thin film photovoltaic solar cell and method of making the same
JPS59121829A (ja) * 1982-12-28 1984-07-14 Agency Of Ind Science & Technol 単結晶シリコン薄膜の製造方法
US5057163A (en) * 1988-05-04 1991-10-15 Astropower, Inc. Deposited-silicon film solar cell
JP2849388B2 (ja) * 1988-06-10 1999-01-20 三井化学株式会社 積層導電膜
JP2779033B2 (ja) * 1990-02-02 1998-07-23 三菱電機株式会社 多結晶Ｓｉ薄膜の成長方法
JPH04133356A (ja) * 1990-09-25 1992-05-07 Semiconductor Energy Lab Co Ltd 光電変換装置
JPH05129639A (ja) * 1991-01-14 1993-05-25 Mitsubishi Electric Corp 太陽電池及びその製造方法
JPH05235391A (ja) * 1991-03-07 1993-09-10 Mitsubishi Electric Corp 薄膜太陽電池及びその製造方法並びに半導体装置の製造方法
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Also Published As

Publication number Publication date
DE69411861T2 (de) 1999-01-21
JPH07211931A (ja) 1995-08-11
EP0656664A1 (en) 1995-06-07
DE69411861D1 (de) 1998-08-27
US5575862A (en) 1996-11-19
EP0656664B1 (en) 1998-07-22
JP3478618B2 (ja) 2003-12-15

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