FR2283548A1 - Procede de fabrication d'une jonction pn d'un semi-conducteur a compensation thermique, et semi-conducteur ainsi obtenu - Google Patents

Procede de fabrication d'une jonction pn d'un semi-conducteur a compensation thermique, et semi-conducteur ainsi obtenu

Info

Publication number
FR2283548A1
FR2283548A1 FR7526179A FR7526179A FR2283548A1 FR 2283548 A1 FR2283548 A1 FR 2283548A1 FR 7526179 A FR7526179 A FR 7526179A FR 7526179 A FR7526179 A FR 7526179A FR 2283548 A1 FR2283548 A1 FR 2283548A1
Authority
FR
France
Prior art keywords
semiconductor
junction
manufacturing
thermally compensated
obtained semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7526179A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2283548A1 publication Critical patent/FR2283548A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0772—Vertical bipolar transistor in combination with resistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
FR7526179A 1974-08-26 1975-08-25 Procede de fabrication d'une jonction pn d'un semi-conducteur a compensation thermique, et semi-conducteur ainsi obtenu Withdrawn FR2283548A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/500,448 US3988759A (en) 1974-08-26 1974-08-26 Thermally balanced PN junction

Publications (1)

Publication Number Publication Date
FR2283548A1 true FR2283548A1 (fr) 1976-03-26

Family

ID=23989460

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7526179A Withdrawn FR2283548A1 (fr) 1974-08-26 1975-08-25 Procede de fabrication d'une jonction pn d'un semi-conducteur a compensation thermique, et semi-conducteur ainsi obtenu

Country Status (6)

Country Link
US (1) US3988759A (fr)
JP (1) JPS5149689A (fr)
CA (1) CA1041221A (fr)
DE (1) DE2537327A1 (fr)
FR (1) FR2283548A1 (fr)
GB (1) GB1500325A (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5397379A (en) * 1977-02-07 1978-08-25 Fujitsu Ltd Transistor
JPS53122170U (fr) * 1977-03-04 1978-09-28
JPS5457963U (fr) * 1977-09-29 1979-04-21
JPS5496161U (fr) * 1977-12-19 1979-07-07
JPS56146271A (en) * 1980-04-16 1981-11-13 Nec Corp Semiconductor device
JPS57138174A (en) * 1981-02-20 1982-08-26 Hitachi Ltd Semiconductor device
US4691220A (en) * 1983-10-07 1987-09-01 American Telephone And Telegraph Company, At&T Bell Laboratories Radial high voltage bidirectional switch structure with concavo-concave shaped semiconductor regions

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1153497A (en) * 1966-07-25 1969-05-29 Associated Semiconductor Mft Improvements in and relating to Semiconductor Devices
US3667008A (en) * 1970-10-29 1972-05-30 Rca Corp Semiconductor device employing two-metal contact and polycrystalline isolation means
US3740621A (en) * 1971-08-30 1973-06-19 Rca Corp Transistor employing variable resistance ballasting means dependent on the magnitude of the emitter current

Also Published As

Publication number Publication date
JPS5149689A (en) 1976-04-30
DE2537327A1 (de) 1976-03-11
US3988759A (en) 1976-10-26
CA1041221A (fr) 1978-10-24
GB1500325A (en) 1978-02-08
JPS5523468B2 (fr) 1980-06-23

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Legal Events

Date Code Title Description
ST Notification of lapse