JPS5149689A - Handotaisochi - Google Patents

Handotaisochi

Info

Publication number
JPS5149689A
JPS5149689A JP50103392A JP10339275A JPS5149689A JP S5149689 A JPS5149689 A JP S5149689A JP 50103392 A JP50103392 A JP 50103392A JP 10339275 A JP10339275 A JP 10339275A JP S5149689 A JPS5149689 A JP S5149689A
Authority
JP
Japan
Prior art keywords
handotaisochi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50103392A
Other languages
English (en)
Other versions
JPS5523468B2 (ja
Inventor
Deningu Richaado
Jeraado Aintohooben Uiremu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of JPS5149689A publication Critical patent/JPS5149689A/ja
Publication of JPS5523468B2 publication Critical patent/JPS5523468B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0772—Vertical bipolar transistor in combination with resistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
JP50103392A 1974-08-26 1975-08-25 Handotaisochi Granted JPS5149689A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/500,448 US3988759A (en) 1974-08-26 1974-08-26 Thermally balanced PN junction

Publications (2)

Publication Number Publication Date
JPS5149689A true JPS5149689A (en) 1976-04-30
JPS5523468B2 JPS5523468B2 (ja) 1980-06-23

Family

ID=23989460

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50103392A Granted JPS5149689A (en) 1974-08-26 1975-08-25 Handotaisochi

Country Status (6)

Country Link
US (1) US3988759A (ja)
JP (1) JPS5149689A (ja)
CA (1) CA1041221A (ja)
DE (1) DE2537327A1 (ja)
FR (1) FR2283548A1 (ja)
GB (1) GB1500325A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53122170U (ja) * 1977-03-04 1978-09-28
JPS5457963U (ja) * 1977-09-29 1979-04-21
JPS5496161U (ja) * 1977-12-19 1979-07-07
JPS56146271A (en) * 1980-04-16 1981-11-13 Nec Corp Semiconductor device
JPS57138174A (en) * 1981-02-20 1982-08-26 Hitachi Ltd Semiconductor device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5397379A (en) * 1977-02-07 1978-08-25 Fujitsu Ltd Transistor
US4691220A (en) * 1983-10-07 1987-09-01 American Telephone And Telegraph Company, At&T Bell Laboratories Radial high voltage bidirectional switch structure with concavo-concave shaped semiconductor regions

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1153497A (en) * 1966-07-25 1969-05-29 Associated Semiconductor Mft Improvements in and relating to Semiconductor Devices
US3667008A (en) * 1970-10-29 1972-05-30 Rca Corp Semiconductor device employing two-metal contact and polycrystalline isolation means
US3740621A (en) * 1971-08-30 1973-06-19 Rca Corp Transistor employing variable resistance ballasting means dependent on the magnitude of the emitter current

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53122170U (ja) * 1977-03-04 1978-09-28
JPS5457963U (ja) * 1977-09-29 1979-04-21
JPS5496161U (ja) * 1977-12-19 1979-07-07
JPS56146271A (en) * 1980-04-16 1981-11-13 Nec Corp Semiconductor device
JPS57138174A (en) * 1981-02-20 1982-08-26 Hitachi Ltd Semiconductor device
JPH049378B2 (ja) * 1981-02-20 1992-02-20

Also Published As

Publication number Publication date
FR2283548A1 (fr) 1976-03-26
DE2537327A1 (de) 1976-03-11
US3988759A (en) 1976-10-26
CA1041221A (en) 1978-10-24
GB1500325A (en) 1978-02-08
JPS5523468B2 (ja) 1980-06-23

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