DE69406321T2 - Verfahren und Vorrichtung vom Typ Czochralski zur Herstellung von Halbleitereinkristallen - Google Patents

Verfahren und Vorrichtung vom Typ Czochralski zur Herstellung von Halbleitereinkristallen

Info

Publication number
DE69406321T2
DE69406321T2 DE69406321T DE69406321T DE69406321T2 DE 69406321 T2 DE69406321 T2 DE 69406321T2 DE 69406321 T DE69406321 T DE 69406321T DE 69406321 T DE69406321 T DE 69406321T DE 69406321 T2 DE69406321 T2 DE 69406321T2
Authority
DE
Germany
Prior art keywords
production
single crystals
semiconductor single
type czochralski
czochralski
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69406321T
Other languages
English (en)
Other versions
DE69406321D1 (de
Inventor
Urano Masahiko
Oda Michiaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of DE69406321D1 publication Critical patent/DE69406321D1/de
Application granted granted Critical
Publication of DE69406321T2 publication Critical patent/DE69406321T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE69406321T 1993-02-10 1994-02-04 Verfahren und Vorrichtung vom Typ Czochralski zur Herstellung von Halbleitereinkristallen Expired - Fee Related DE69406321T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2239893 1993-02-10
JP5027920A JP2823035B2 (ja) 1993-02-10 1993-02-17 半導体単結晶の引上装置及び引上方法

Publications (2)

Publication Number Publication Date
DE69406321D1 DE69406321D1 (de) 1997-11-27
DE69406321T2 true DE69406321T2 (de) 1998-04-09

Family

ID=26359606

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69406321T Expired - Fee Related DE69406321T2 (de) 1993-02-10 1994-02-04 Verfahren und Vorrichtung vom Typ Czochralski zur Herstellung von Halbleitereinkristallen

Country Status (4)

Country Link
US (1) US5419277A (de)
EP (1) EP0610830B1 (de)
JP (1) JP2823035B2 (de)
DE (1) DE69406321T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112015003765B4 (de) 2014-09-12 2022-02-03 Shin-Etsu Handotai Co., Ltd. Verfahren zum Herstellen eines Einkristalls

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9810207D0 (en) * 1998-05-14 1998-07-08 Secr Defence Crystal growth apparatus and method
JP4616949B2 (ja) * 1999-03-17 2011-01-19 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 メルトレベル検出装置及び検出方法
US6491752B1 (en) * 1999-07-16 2002-12-10 Sumco Oregon Corporation Enhanced n-type silicon material for epitaxial wafer substrate and method of making same
TW546423B (en) * 2000-05-01 2003-08-11 Komatsu Denshi Kinzoku Kk Method and apparatus for measuring melt level
JP4734139B2 (ja) 2006-02-27 2011-07-27 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 位置測定方法
JP5167651B2 (ja) * 2007-02-08 2013-03-21 信越半導体株式会社 遮熱部材下端面と原料融液面との間の距離の測定方法、及びその距離の制御方法
US9228878B2 (en) * 2012-03-19 2016-01-05 Advanced Energy Industries, Inc. Dual beam non-contact displacement sensor
DE102013002471B4 (de) 2013-02-13 2016-08-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur Bestimmung der Schmelzhöhe und zur Regulation der Erstarrung und Schmelzung einer Schmelze in einem Tiegel
US11692883B2 (en) 2020-10-28 2023-07-04 Advanced Energy Industries, Inc. Fiber optic temperature probe

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2979386A (en) * 1956-08-02 1961-04-11 Shockley William Crystal growing apparatus
FR1316707A (fr) * 1961-12-22 1963-02-01 Radiotechnique Perfectionnements aux dispositifs d'obtention de monocristaux par tirage
US3741656A (en) * 1971-05-27 1973-06-26 Bendix Corp Fill level measuring device
US4508970A (en) * 1982-07-15 1985-04-02 Motorola, Inc. Melt level sensing system and method
JPS6424089A (en) * 1987-07-21 1989-01-26 Shinetsu Handotai Kk Device for adjusting initial position of melt surface
JP2678383B2 (ja) * 1989-05-30 1997-11-17 信越半導体 株式会社 単結晶上装置
JPH0663824B2 (ja) * 1990-04-29 1994-08-22 信越半導体株式会社 湯面振動測定方法及び装置
JPH0726817B2 (ja) * 1990-07-28 1995-03-29 信越半導体株式会社 結晶径測定装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112015003765B4 (de) 2014-09-12 2022-02-03 Shin-Etsu Handotai Co., Ltd. Verfahren zum Herstellen eines Einkristalls

Also Published As

Publication number Publication date
EP0610830B1 (de) 1997-10-22
US5419277A (en) 1995-05-30
JP2823035B2 (ja) 1998-11-11
DE69406321D1 (de) 1997-11-27
JPH06293590A (ja) 1994-10-21
EP0610830A1 (de) 1994-08-17

Similar Documents

Publication Publication Date Title
DE69833610D1 (de) Verfahren und Vorrichtung zur Herstellung von Silicium Einkristallen mit verringerten Kristalldefekten und danach hergestellte Silicium Einkristall und Siliciumwafer
DE69533114D1 (de) Verfahren und vorrichtung zur herstellung von einkristallen
DE69429218D1 (de) Vorrichtung zur schnellen thermischen behandlung zur herstellung von halbleiterwafers
ATA224287A (de) Verfahren zum zuechten von kristallen und vorrichtung zur durchfuehrung des verfahrens
DE69122599D1 (de) Verfahren und gerät zur herstellung von einkristallen
DE69723865D1 (de) Verfahren und vorrichtung zur herstellung von einkristallen
DE68913429D1 (de) Verfahren zur Herstellung von Silicium-Einkristallen.
DE68916157D1 (de) Vorrichtung und Verfahren zur Züchtung von Kristallen aus Halbleitermaterialien.
DE3480721D1 (de) Verfahren und vorrichtung zur herstellung von einkristallen.
DE69839723D1 (de) Verfahren und Vorrichtung zur Herstellung von Halbleiterkristallen
DE3878990T2 (de) Vorrichtung und verfahren zur zuechtung von kristallen aus halbleitermaterialien.
DE69610021D1 (de) Verfahren und Vorrichtung zur Herstellung von Einkristallen durch die Czochralski-Technik
DE69406321D1 (de) Verfahren und Vorrichtung vom Typ Czochralski zur Herstellung von Halbleitereinkristallen
DE59705140D1 (de) Verfahren und Vorrichtung zur Herstellung von Einkristallen
DE59603612D1 (de) Verfahren und Vorrichtung zur Herstellung von Einkristallen
DE69605507D1 (de) Verfahren und Vorrichtung zur Herstellung Einkristallen vom Typ Oxid
DE69422367D1 (de) Verfahren und Vorrichtung zur elektrolytischen Herstellung von Arsin
DE69007858D1 (de) Vorrichtung zur Herstellung von Silicium-Einkristallen.
DE69704637D1 (de) Vorrichtung und Verfahren zur Herstellung von Einkristallen
DE69417933D1 (de) Verfahren und Vorrichtung zur Herstellung von Halbleitervorrichtungen
DE3853084D1 (de) Verfahren und vorrichtung zur züchtung von kristallen nach der czochralski-methode.
DE69110029D1 (de) Vorrichtung zur Herstellung von Halbleitern und Verfahren zur Kontrolle der thermischen Behandlung von Wafers.
DE69016392D1 (de) Verfahren und Vorrichtung zur Züchtung von Kristallen.
DE69613306D1 (de) Vorrichtung zur Herstellung von Kristallen
DE69203737D1 (de) Verfahren und Vorrichtung zur Kristallzüchtung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee