DE69329083T2 - Halbleiteranordnung - Google Patents

Halbleiteranordnung

Info

Publication number
DE69329083T2
DE69329083T2 DE69329083T DE69329083T DE69329083T2 DE 69329083 T2 DE69329083 T2 DE 69329083T2 DE 69329083 T DE69329083 T DE 69329083T DE 69329083 T DE69329083 T DE 69329083T DE 69329083 T2 DE69329083 T2 DE 69329083T2
Authority
DE
Germany
Prior art keywords
polypeptide
sequence
seq
dna sequence
val
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69329083T
Other languages
German (de)
English (en)
Other versions
DE69329083D1 (de
Inventor
Franciscus Adrianus Cornelis Maria Schoofs
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE69329083D1 publication Critical patent/DE69329083D1/de
Publication of DE69329083T2 publication Critical patent/DE69329083T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/87—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of PN-junction gate FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10P14/24—

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Bipolar Transistors (AREA)
  • Noodles (AREA)
DE69329083T 1992-04-14 1993-04-06 Halbleiteranordnung Expired - Lifetime DE69329083T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP92201046 1992-04-14

Publications (2)

Publication Number Publication Date
DE69329083D1 DE69329083D1 (de) 2000-08-31
DE69329083T2 true DE69329083T2 (de) 2001-08-02

Family

ID=8210549

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69329083T Expired - Lifetime DE69329083T2 (de) 1992-04-14 1993-04-06 Halbleiteranordnung

Country Status (7)

Country Link
US (1) US5338949A (Direct)
JP (1) JP3509896B2 (Direct)
KR (1) KR100263602B1 (Direct)
CN (1) CN1032339C (Direct)
AT (1) ATE195037T1 (Direct)
DE (1) DE69329083T2 (Direct)
TW (1) TW287307B (Direct)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11191596A (ja) * 1997-04-02 1999-07-13 Sony Corp 半導体メモリセル及びその製造方法
JP3858332B2 (ja) * 1997-04-09 2006-12-13 ソニー株式会社 電界効果トランジスタのピンチオフ電圧の測定回路、測定用トランジスタ、測定方法および製造方法
CN1147935C (zh) * 2000-12-18 2004-04-28 黄敞 互补偶载场效应晶体管及其片上系统
US7829941B2 (en) * 2006-01-24 2010-11-09 Alpha & Omega Semiconductor, Ltd. Configuration and method to form MOSFET devices with low resistance silicide gate and mesa contact regions
CN100570885C (zh) * 2006-06-30 2009-12-16 崇贸科技股份有限公司 具有高击穿电压的电压夹断装置及其制造方法
TWI405332B (zh) 2010-03-10 2013-08-11 Macronix Int Co Ltd 接面場效應電晶體元件
WO2012075272A2 (en) * 2010-12-01 2012-06-07 Cornell University Structures and methods for electrically and mechanically linked monolithically integrated transistor and mems/nems devices
US9214457B2 (en) 2011-09-20 2015-12-15 Alpha & Omega Semiconductor Incorporated Method of integrating high voltage devices
CN103137686B (zh) * 2011-11-24 2016-01-06 中芯国际集成电路制造(北京)有限公司 半导体器件及其制造方法
CN103137685B (zh) * 2011-11-24 2015-09-30 中芯国际集成电路制造(北京)有限公司 半导体器件及其制造方法
CN103904078A (zh) * 2012-12-28 2014-07-02 旺宏电子股份有限公司 高电压接面场效晶体管结构

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3450963A (en) * 1966-12-30 1969-06-17 Westinghouse Electric Corp Field effect semiconductor devices of the junction type and method of making
US3967305A (en) * 1969-03-27 1976-06-29 Mcdonnell Douglas Corporation Multichannel junction field-effect transistor and process
JPS53139987A (en) * 1977-05-13 1978-12-06 Nec Corp Monolithic impedance converting circuit
JPS5425175A (en) * 1977-07-27 1979-02-24 Nippon Gakki Seizo Kk Integrated circuit device
FR2411512A1 (fr) * 1977-12-06 1979-07-06 Lardy Jean Louis Porte logique a transistor mos multidrain
US4516037A (en) * 1978-12-20 1985-05-07 At&T Bell Laboratories Control circuitry for high voltage solid-state switches
JPS5740983A (en) * 1980-08-26 1982-03-06 Nec Corp Semiconductor device and manufacture thereof
JPS61112381A (ja) * 1984-11-07 1986-05-30 Hitachi Ltd 半導体装置
US4816881A (en) * 1985-06-27 1989-03-28 United State Of America As Represented By The Secretary Of The Navy A TiW diffusion barrier for AuZn ohmic contacts to p-type InP
JPH0244413A (ja) * 1988-08-05 1990-02-14 Nec Corp 定電流供給回路
US4951114A (en) * 1988-12-05 1990-08-21 Raytheon Company Complementary metal electrode semiconductor device

Also Published As

Publication number Publication date
US5338949A (en) 1994-08-16
KR930022604A (ko) 1993-11-24
JP3509896B2 (ja) 2004-03-22
KR100263602B1 (ko) 2000-08-01
CN1032339C (zh) 1996-07-17
ATE195037T1 (de) 2000-08-15
JPH0855860A (ja) 1996-02-27
CN1082254A (zh) 1994-02-16
DE69329083D1 (de) 2000-08-31
TW287307B (Direct) 1996-10-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN

8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL