DE69324003D1 - Bipolar-Leistungstransistor mit hoher Kollektor-Durchbrucksspannung und Verfahren zu seiner Herstellung - Google Patents

Bipolar-Leistungstransistor mit hoher Kollektor-Durchbrucksspannung und Verfahren zu seiner Herstellung

Info

Publication number
DE69324003D1
DE69324003D1 DE69324003T DE69324003T DE69324003D1 DE 69324003 D1 DE69324003 D1 DE 69324003D1 DE 69324003 T DE69324003 T DE 69324003T DE 69324003 T DE69324003 T DE 69324003T DE 69324003 D1 DE69324003 D1 DE 69324003D1
Authority
DE
Germany
Prior art keywords
production
breakdown voltage
power transistor
bipolar power
high collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69324003T
Other languages
English (en)
Other versions
DE69324003T2 (de
Inventor
Ferruccio Frisina
Salvatore Coffa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Original Assignee
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno filed Critical CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Application granted granted Critical
Publication of DE69324003D1 publication Critical patent/DE69324003D1/de
Publication of DE69324003T2 publication Critical patent/DE69324003T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H01L29/66295—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/01—Bipolar transistors-ion implantation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/965—Shaped junction formation
DE69324003T 1993-06-28 1993-06-28 Bipolar-Leistungstransistor mit hoher Kollektor-Durchbrucksspannung und Verfahren zu seiner Herstellung Expired - Fee Related DE69324003T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP93830276A EP0632502B1 (de) 1993-06-28 1993-06-28 Bipolar-Leistungstransistor mit hoher Kollektor-Durchbrucksspannung und Verfahren zu seiner Herstellung

Publications (2)

Publication Number Publication Date
DE69324003D1 true DE69324003D1 (de) 1999-04-22
DE69324003T2 DE69324003T2 (de) 1999-07-15

Family

ID=8215188

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69324003T Expired - Fee Related DE69324003T2 (de) 1993-06-28 1993-06-28 Bipolar-Leistungstransistor mit hoher Kollektor-Durchbrucksspannung und Verfahren zu seiner Herstellung

Country Status (4)

Country Link
US (2) US5569612A (de)
EP (1) EP0632502B1 (de)
JP (1) JPH0729914A (de)
DE (1) DE69324003T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3008154B2 (ja) * 1994-12-19 2000-02-14 セイコーインスツルメンツ株式会社 半導体装置の製造方法
KR970024275A (ko) * 1995-10-10 1997-05-30 김광호 안전 동작 영역을 증가시킨 트랜지스터 및 그 제조 방법
DE19741167C2 (de) * 1997-09-18 1999-08-12 Siemens Ag Randstruktur für ein Halbleiterbauelement
GB9804177D0 (en) * 1998-02-28 1998-04-22 Philips Electronics Nv Semiconductor switch devices and their manufacture
US6211028B1 (en) 1999-02-05 2001-04-03 Taiwan Semiconductor Manufacturing Company Twin current bipolar device with hi-lo base profile
US6437421B1 (en) * 1999-12-03 2002-08-20 Legerity, Inc. Self-aligned dual-base semiconductor process and structure incorporating multiple bipolar device types
US6506656B2 (en) 2001-03-19 2003-01-14 International Business Machines Corporation Stepped collector implant and method for fabrication
FR2828767B1 (fr) * 2001-08-14 2003-12-12 Thales Sa Transistor bipolaire a tension de claquage elevee
US7037799B2 (en) * 2002-10-24 2006-05-02 Texas Instruments Incorporated Breakdown voltage adjustment for bipolar transistors
DE10302632B4 (de) * 2003-01-23 2004-11-11 Austriamicrosystems Ag Verfahren zum Erzeugen eines definierten Dotierungsgebietes in einem Halbleitermaterial
US20060049464A1 (en) * 2004-09-03 2006-03-09 Rao G R Mohan Semiconductor devices with graded dopant regions
EP1635397A1 (de) * 2004-09-14 2006-03-15 STMicroelectronics S.r.l. Integriertes Leistungsbauelement mit verbessertem Randabschluss
DE102007001108B4 (de) * 2007-01-04 2012-03-22 Infineon Technologies Ag Diode und Verfahren zu ihrer Herstellung
CN113437133B (zh) * 2021-06-22 2022-07-22 弘大芯源(深圳)半导体有限公司 一种耐二次击穿的功率双极晶体管

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2241600A1 (de) * 1971-08-26 1973-03-01 Dionics Inc Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung
IN141922B (de) * 1974-08-19 1977-05-07 Rca Corp
JPS5833693B2 (ja) * 1977-08-12 1983-07-21 株式会社日立製作所 半導体装置の製造方法
US4416708A (en) * 1982-01-15 1983-11-22 International Rectifier Corporation Method of manufacture of high speed, high power bipolar transistor
US4559696A (en) * 1984-07-11 1985-12-24 Fairchild Camera & Instrument Corporation Ion implantation to increase emitter energy gap in bipolar transistors
IT1214805B (it) * 1984-08-21 1990-01-18 Ates Componenti Elettron Spositivi a semiconduttore con giunprocesso per la fabbricazione di dizioni planari a concentrazione di carica variabile e ad altissima tensione di breakdown
IT1202311B (it) * 1985-12-11 1989-02-02 Sgs Microelettronica Spa Dispositivo a semiconduttore con una giunzione piana a terminazione auto passivante
DE3782608D1 (de) * 1986-09-30 1992-12-17 Siemens Ag Verfahren zum erzeugen eines p-dotierten halbleitergebiets in einem n-leitenden halbleiterkoerper.
IT1215024B (it) * 1986-10-01 1990-01-31 Sgs Microelettronica Spa Processo per la formazione di un dispositivo monolitico a semiconduttore di alta tensione
JPH0744186B2 (ja) * 1989-03-13 1995-05-15 株式会社東芝 半導体装置の製造方法
EP0439753A1 (de) * 1990-01-31 1991-08-07 International Business Machines Corporation Bipolartransistor mit verbesserter Niedertemperatur-Stromverstärkung
US4999309A (en) * 1990-07-12 1991-03-12 National Semiconductor Corporation Aluminum-implant leakage reduction
WO1993019490A1 (en) * 1992-03-23 1993-09-30 Rohm Co., Ltd. Voltage regulating diode
US5192712A (en) * 1992-04-15 1993-03-09 National Semiconductor Corporation Control and moderation of aluminum in silicon using germanium and germanium with boron
US5436179A (en) * 1994-01-05 1995-07-25 Texas Instruments Incorporated Semiconductor process for manufacturing semiconductor devices with increased operating voltages

Also Published As

Publication number Publication date
US5939769A (en) 1999-08-17
DE69324003T2 (de) 1999-07-15
US5569612A (en) 1996-10-29
JPH0729914A (ja) 1995-01-31
EP0632502B1 (de) 1999-03-17
EP0632502A1 (de) 1995-01-04

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Legal Events

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8339 Ceased/non-payment of the annual fee