FR2828767B1 - Transistor bipolaire a tension de claquage elevee - Google Patents
Transistor bipolaire a tension de claquage eleveeInfo
- Publication number
- FR2828767B1 FR2828767B1 FR0110821A FR0110821A FR2828767B1 FR 2828767 B1 FR2828767 B1 FR 2828767B1 FR 0110821 A FR0110821 A FR 0110821A FR 0110821 A FR0110821 A FR 0110821A FR 2828767 B1 FR2828767 B1 FR 2828767B1
- Authority
- FR
- France
- Prior art keywords
- bipolar transistor
- breakdown voltage
- high breakdown
- bipolar
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000015556 catabolic process Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0110821A FR2828767B1 (fr) | 2001-08-14 | 2001-08-14 | Transistor bipolaire a tension de claquage elevee |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0110821A FR2828767B1 (fr) | 2001-08-14 | 2001-08-14 | Transistor bipolaire a tension de claquage elevee |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2828767A1 FR2828767A1 (fr) | 2003-02-21 |
| FR2828767B1 true FR2828767B1 (fr) | 2003-12-12 |
Family
ID=8866538
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR0110821A Expired - Fee Related FR2828767B1 (fr) | 2001-08-14 | 2001-08-14 | Transistor bipolaire a tension de claquage elevee |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2828767B1 (fr) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4337474A (en) * | 1978-08-31 | 1982-06-29 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
| GB2173037A (en) * | 1985-03-29 | 1986-10-01 | Philips Electronic Associated | Semiconductor devices employing conductivity modulation |
| IT1202311B (it) * | 1985-12-11 | 1989-02-02 | Sgs Microelettronica Spa | Dispositivo a semiconduttore con una giunzione piana a terminazione auto passivante |
| EP0632502B1 (fr) * | 1993-06-28 | 1999-03-17 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno | Transistor bipolaire de puissance ayant une tension de claquage de collecteur élevée et procédé pour sa fabrication |
-
2001
- 2001-08-14 FR FR0110821A patent/FR2828767B1/fr not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| FR2828767A1 (fr) | 2003-02-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |