DE69323076T2 - Verfahren zur Erkennung fehlerhafter Elemente eines redundanten Halbleiterspeichers - Google Patents

Verfahren zur Erkennung fehlerhafter Elemente eines redundanten Halbleiterspeichers

Info

Publication number
DE69323076T2
DE69323076T2 DE69323076T DE69323076T DE69323076T2 DE 69323076 T2 DE69323076 T2 DE 69323076T2 DE 69323076 T DE69323076 T DE 69323076T DE 69323076 T DE69323076 T DE 69323076T DE 69323076 T2 DE69323076 T2 DE 69323076T2
Authority
DE
Germany
Prior art keywords
semiconductor memory
defective elements
redundant semiconductor
recognizing defective
recognizing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69323076T
Other languages
English (en)
Other versions
DE69323076D1 (de
Inventor
Saverio Pezzini Saveri Pezzini
Roberto Ganzelmi Robe Ganzelmi
Maurizio Peri Maurizio Peri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Publication of DE69323076D1 publication Critical patent/DE69323076D1/de
Application granted granted Critical
Publication of DE69323076T2 publication Critical patent/DE69323076T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70Masking faults in memories by using spares or by reconfiguring
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/24Accessing extra cells, e.g. dummy cells or redundant cells
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44Indication or identification of errors, e.g. for repair
DE69323076T 1993-07-26 1993-07-26 Verfahren zur Erkennung fehlerhafter Elemente eines redundanten Halbleiterspeichers Expired - Fee Related DE69323076T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP93830329A EP0637034B1 (de) 1993-07-26 1993-07-26 Verfahren zur Erkennung fehlerhafter Elemente eines redundanten Halbleiterspeichers

Publications (2)

Publication Number Publication Date
DE69323076D1 DE69323076D1 (de) 1999-02-25
DE69323076T2 true DE69323076T2 (de) 1999-06-24

Family

ID=8215203

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69323076T Expired - Fee Related DE69323076T2 (de) 1993-07-26 1993-07-26 Verfahren zur Erkennung fehlerhafter Elemente eines redundanten Halbleiterspeichers

Country Status (4)

Country Link
US (1) US5774646A (de)
EP (1) EP0637034B1 (de)
JP (1) JPH07169298A (de)
DE (1) DE69323076T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69626792T2 (de) * 1996-05-09 2004-03-25 Stmicroelectronics S.R.L., Agrate Brianza Elektrische löschbare und programmierbare nichtflüchtige Speicheranordnung mit prüfbaren Redundanzschaltungen
FR2764096B1 (fr) * 1997-05-30 1999-08-13 Sgs Thomson Microelectronics Test d'une memoire en circuit integre pourvue d'au moins un element de redondance
DE10002139A1 (de) 2000-01-19 2001-08-02 Infineon Technologies Ag Datenspeicher
DE10002127B4 (de) * 2000-01-19 2012-12-27 Infineon Technologies Ag Testverfahren für einen Datenspeicher
US7320100B2 (en) * 2003-05-20 2008-01-15 Cray Inc. Apparatus and method for memory with bit swapping on the fly and testing
US7184916B2 (en) * 2003-05-20 2007-02-27 Cray Inc. Apparatus and method for testing memory cards
JP4514028B2 (ja) * 2004-05-20 2010-07-28 ルネサスエレクトロニクス株式会社 故障診断回路及び故障診断方法
EP1617438B1 (de) * 2004-07-14 2006-10-25 STMicroelectronics S.r.l. NAND Flash Speicher mit Speicherredundanz
CN105702299B (zh) * 2015-12-30 2018-09-28 工业和信息化部电子第五研究所 存储器单元失效检测方法与系统

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4156905A (en) * 1974-02-28 1979-05-29 Ncr Corporation Method and apparatus for improving access speed in a random access memory
JPS5721799B2 (de) * 1975-02-01 1982-05-10
US4051354A (en) * 1975-07-03 1977-09-27 Texas Instruments Incorporated Fault-tolerant cell addressable array
US4047163A (en) * 1975-07-03 1977-09-06 Texas Instruments Incorporated Fault-tolerant cell addressable array
US4063081A (en) * 1976-06-08 1977-12-13 Honeywell Computer apparatus
US4535420A (en) * 1979-09-26 1985-08-13 Sperry Corporation Circular-queue structure
JPS59185098A (ja) * 1983-04-04 1984-10-20 Oki Electric Ind Co Ltd 自己診断回路内蔵型半導体メモリ装置
NL8600099A (nl) * 1986-01-20 1987-08-17 Philips Nv Niet-vluchtig, programmeerbaar halfgeleidergeheugen.
US5274648A (en) * 1990-01-24 1993-12-28 International Business Machines Corporation Memory card resident diagnostic testing
US5224101A (en) * 1990-05-16 1993-06-29 The United States Of America As Represented By The Secretary Of The Air Force Micro-coded built-in self-test apparatus for a memory array
JP2899374B2 (ja) * 1990-07-16 1999-06-02 沖電気工業株式会社 半導体メモリのデコーダチェック回路

Also Published As

Publication number Publication date
EP0637034A1 (de) 1995-02-01
EP0637034B1 (de) 1999-01-13
US5774646A (en) 1998-06-30
DE69323076D1 (de) 1999-02-25
JPH07169298A (ja) 1995-07-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee