DE69315813D1 - Kaskodenschaltungsstruktur mit bipolaren Epitoxial-Transistoren und niedrig gelegenem Basisanschluss - Google Patents

Kaskodenschaltungsstruktur mit bipolaren Epitoxial-Transistoren und niedrig gelegenem Basisanschluss

Info

Publication number
DE69315813D1
DE69315813D1 DE69315813T DE69315813T DE69315813D1 DE 69315813 D1 DE69315813 D1 DE 69315813D1 DE 69315813 T DE69315813 T DE 69315813T DE 69315813 T DE69315813 T DE 69315813T DE 69315813 D1 DE69315813 D1 DE 69315813D1
Authority
DE
Germany
Prior art keywords
epitoxial
bipolar
transistors
low
circuit structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69315813T
Other languages
English (en)
Other versions
DE69315813T2 (de
Inventor
Robertus Wilhelmus C Dekker
Henricus Godefridus R Maas
Dirk Jan Gravesteijn
Martinus Pieter J Versleijen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV, Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE69315813D1 publication Critical patent/DE69315813D1/de
Publication of DE69315813T2 publication Critical patent/DE69315813T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
DE69315813T 1992-12-28 1993-12-23 Kaskodenschaltungsstruktur mit bipolaren Epitoxial-Transistoren und niedrig gelegenem Basisanschluss Expired - Lifetime DE69315813T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP92204091 1992-12-28

Publications (2)

Publication Number Publication Date
DE69315813D1 true DE69315813D1 (de) 1998-01-29
DE69315813T2 DE69315813T2 (de) 1998-06-10

Family

ID=8211178

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69315813T Expired - Lifetime DE69315813T2 (de) 1992-12-28 1993-12-23 Kaskodenschaltungsstruktur mit bipolaren Epitoxial-Transistoren und niedrig gelegenem Basisanschluss

Country Status (4)

Country Link
US (1) US5399899A (de)
JP (1) JP3905929B2 (de)
KR (1) KR100327746B1 (de)
DE (1) DE69315813T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0810662A1 (de) * 1996-05-29 1997-12-03 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Integriertes Bauteil in Emitterschalteranordnung und mit einer zellularen Struktur
JP2003529937A (ja) 2000-03-30 2003-10-07 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体装置及び半導体装置を製造する方法
US6670255B2 (en) * 2001-09-27 2003-12-30 International Business Machines Corporation Method of fabricating lateral diodes and bipolar transistors
WO2004075303A1 (en) * 2003-02-18 2004-09-02 Koninklijke Philips Electronics N.V. Semiconductor device and method of manufacturing such a device
WO2005020330A1 (de) * 2003-08-13 2005-03-03 Atmel Germany Gmbh Verfahren zur verbesserung elektrischer eigenschaften aktiver bipolarbauelemente
DE102004037186B4 (de) * 2003-08-13 2010-04-15 Atmel Automotive Gmbh Bipolares Halbleiterbauelement mit Kaskodenstruktur und Verfahren zur Herstellung desselben
DE102004038699A1 (de) * 2004-08-10 2006-02-23 Atmel Germany Gmbh Kaskode, Kaskodenschaltung und Verfahren zur vertikalen Integration von zwei Bipolartransistoren zu einer Kaskodenanordnung
DE102004044835B4 (de) * 2004-09-14 2008-12-11 Atmel Germany Gmbh Integrierte Halbleiter-Kaskodenschaltung für Hochfrequenzanwendungen
DE102004053393B4 (de) * 2004-11-05 2007-01-11 Atmel Germany Gmbh Verfahren zur Herstellung einer vertikal integrierten Kaskodenstruktur und vertikal integrierte Kaskodenstruktur
DE102004062135B4 (de) 2004-12-23 2010-09-23 Atmel Automotive Gmbh Verstärkerschaltung
US8212291B2 (en) * 2008-03-12 2012-07-03 Georgia Tech Research Corporation Inverse mode SiGe HBT cascode device and fabrication method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4771013A (en) * 1986-08-01 1988-09-13 Texas Instruments Incorporated Process of making a double heterojunction 3-D I2 L bipolar transistor with a Si/Ge superlattice
IT1246759B (it) * 1990-12-31 1994-11-26 Sgs Thomson Microelectronics Struttura integrata di transistore bipolare di potenza e di transistore bipolare di bassa tensione nelle configurazioni ''emitter switching'' o ''semi-ponte'' e relativi processi di fabbricazione.
US5084750A (en) * 1991-02-20 1992-01-28 Raytheon Company Push-pull heterojunction bipolar transistor

Also Published As

Publication number Publication date
JPH06232151A (ja) 1994-08-19
JP3905929B2 (ja) 2007-04-18
US5399899A (en) 1995-03-21
KR100327746B1 (ko) 2002-09-04
DE69315813T2 (de) 1998-06-10
KR940016782A (ko) 1994-07-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8328 Change in the person/name/address of the agent

Representative=s name: VOLMER, G., DIPL.-ING., PAT.-ANW., 52066 AACHEN

8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN

8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL