DE69315813D1 - Kaskodenschaltungsstruktur mit bipolaren Epitoxial-Transistoren und niedrig gelegenem Basisanschluss - Google Patents
Kaskodenschaltungsstruktur mit bipolaren Epitoxial-Transistoren und niedrig gelegenem BasisanschlussInfo
- Publication number
- DE69315813D1 DE69315813D1 DE69315813T DE69315813T DE69315813D1 DE 69315813 D1 DE69315813 D1 DE 69315813D1 DE 69315813 T DE69315813 T DE 69315813T DE 69315813 T DE69315813 T DE 69315813T DE 69315813 D1 DE69315813 D1 DE 69315813D1
- Authority
- DE
- Germany
- Prior art keywords
- epitoxial
- bipolar
- transistors
- low
- circuit structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP92204091 | 1992-12-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69315813D1 true DE69315813D1 (de) | 1998-01-29 |
DE69315813T2 DE69315813T2 (de) | 1998-06-10 |
Family
ID=8211178
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69315813T Expired - Lifetime DE69315813T2 (de) | 1992-12-28 | 1993-12-23 | Kaskodenschaltungsstruktur mit bipolaren Epitoxial-Transistoren und niedrig gelegenem Basisanschluss |
Country Status (4)
Country | Link |
---|---|
US (1) | US5399899A (de) |
JP (1) | JP3905929B2 (de) |
KR (1) | KR100327746B1 (de) |
DE (1) | DE69315813T2 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0810662A1 (de) * | 1996-05-29 | 1997-12-03 | Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Integriertes Bauteil in Emitterschalteranordnung und mit einer zellularen Struktur |
EP1273042B1 (de) | 2000-03-30 | 2010-03-03 | Nxp B.V. | Halbleiterbauelement und dessen herstellungsverfahren |
US6670255B2 (en) * | 2001-09-27 | 2003-12-30 | International Business Machines Corporation | Method of fabricating lateral diodes and bipolar transistors |
EP1597772B1 (de) * | 2003-02-18 | 2008-12-24 | Nxp B.V. | Halbleiterbauelement und verfahren zur herstellung eines solchen bauelements |
DE102004037186B4 (de) * | 2003-08-13 | 2010-04-15 | Atmel Automotive Gmbh | Bipolares Halbleiterbauelement mit Kaskodenstruktur und Verfahren zur Herstellung desselben |
EP1654768A1 (de) * | 2003-08-13 | 2006-05-10 | ATMEL Germany GmbH | Verfahren zur verbesserung elektrischer eigenschaften aktiver bipolarbauelemente |
DE102004038699A1 (de) * | 2004-08-10 | 2006-02-23 | Atmel Germany Gmbh | Kaskode, Kaskodenschaltung und Verfahren zur vertikalen Integration von zwei Bipolartransistoren zu einer Kaskodenanordnung |
DE102004044835B4 (de) * | 2004-09-14 | 2008-12-11 | Atmel Germany Gmbh | Integrierte Halbleiter-Kaskodenschaltung für Hochfrequenzanwendungen |
DE102004053393B4 (de) | 2004-11-05 | 2007-01-11 | Atmel Germany Gmbh | Verfahren zur Herstellung einer vertikal integrierten Kaskodenstruktur und vertikal integrierte Kaskodenstruktur |
DE102004062135B4 (de) * | 2004-12-23 | 2010-09-23 | Atmel Automotive Gmbh | Verstärkerschaltung |
US8212291B2 (en) * | 2008-03-12 | 2012-07-03 | Georgia Tech Research Corporation | Inverse mode SiGe HBT cascode device and fabrication method |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4771013A (en) * | 1986-08-01 | 1988-09-13 | Texas Instruments Incorporated | Process of making a double heterojunction 3-D I2 L bipolar transistor with a Si/Ge superlattice |
IT1246759B (it) * | 1990-12-31 | 1994-11-26 | Sgs Thomson Microelectronics | Struttura integrata di transistore bipolare di potenza e di transistore bipolare di bassa tensione nelle configurazioni ''emitter switching'' o ''semi-ponte'' e relativi processi di fabbricazione. |
US5084750A (en) * | 1991-02-20 | 1992-01-28 | Raytheon Company | Push-pull heterojunction bipolar transistor |
-
1993
- 1993-12-23 DE DE69315813T patent/DE69315813T2/de not_active Expired - Lifetime
- 1993-12-24 KR KR1019930029703A patent/KR100327746B1/ko not_active IP Right Cessation
- 1993-12-27 JP JP33212193A patent/JP3905929B2/ja not_active Expired - Fee Related
- 1993-12-27 US US08/173,839 patent/US5399899A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR940016782A (ko) | 1994-07-25 |
JP3905929B2 (ja) | 2007-04-18 |
DE69315813T2 (de) | 1998-06-10 |
US5399899A (en) | 1995-03-21 |
JPH06232151A (ja) | 1994-08-19 |
KR100327746B1 (ko) | 2002-09-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N |
|
8328 | Change in the person/name/address of the agent |
Representative=s name: VOLMER, G., DIPL.-ING., PAT.-ANW., 52066 AACHEN |
|
8328 | Change in the person/name/address of the agent |
Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: NXP B.V., EINDHOVEN, NL |