DE69313132D1 - Metallionenreduzierung in antireflexunterschichten für photoresist - Google Patents

Metallionenreduzierung in antireflexunterschichten für photoresist

Info

Publication number
DE69313132D1
DE69313132D1 DE69313132T DE69313132T DE69313132D1 DE 69313132 D1 DE69313132 D1 DE 69313132D1 DE 69313132 T DE69313132 T DE 69313132T DE 69313132 T DE69313132 T DE 69313132T DE 69313132 D1 DE69313132 D1 DE 69313132D1
Authority
DE
Germany
Prior art keywords
metalion
underlayers
photoresist
reflective
reduction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69313132T
Other languages
English (en)
Other versions
DE69313132T2 (de
Inventor
Dalil M Rahman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EMD Performance Materials Corp
Original Assignee
Hoechst Celanese Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoechst Celanese Corp filed Critical Hoechst Celanese Corp
Publication of DE69313132D1 publication Critical patent/DE69313132D1/de
Application granted granted Critical
Publication of DE69313132T2 publication Critical patent/DE69313132T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Paints Or Removers (AREA)
DE69313132T 1992-11-25 1993-11-08 Metallionenreduzierung in antireflexunterschichten für photoresist Expired - Lifetime DE69313132T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US98219792A 1992-11-25 1992-11-25
PCT/US1993/010798 WO1994012912A1 (en) 1992-11-25 1993-11-08 Metal ion reduction in bottom anti-reflective coatings for photoresists

Publications (2)

Publication Number Publication Date
DE69313132D1 true DE69313132D1 (de) 1997-09-18
DE69313132T2 DE69313132T2 (de) 1997-12-11

Family

ID=25528927

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69313132T Expired - Lifetime DE69313132T2 (de) 1992-11-25 1993-11-08 Metallionenreduzierung in antireflexunterschichten für photoresist

Country Status (7)

Country Link
US (1) US5580700A (de)
EP (1) EP0671025B1 (de)
JP (1) JP3727335B2 (de)
DE (1) DE69313132T2 (de)
HK (1) HK1001101A1 (de)
SG (1) SG49596A1 (de)
WO (1) WO1994012912A1 (de)

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US5580949A (en) * 1991-12-18 1996-12-03 Hoechst Celanese Corporation Metal ion reduction in novolak resins and photoresists
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JP3184530B2 (ja) * 1992-03-06 2001-07-09 クラリアント・ファイナンス・（ビーブイアイ）・リミテッド 金属イオンレベルが低いフォトレジスト
SG52770A1 (en) * 1992-07-10 1998-09-28 Hoechst Celanese Corp Metal ion reduction in top anti-reflective coatings for photoresists
US5830990A (en) * 1992-07-10 1998-11-03 Clariant Finance (Bvi) Limited Low metals perfluorooctanoic acid and top anti-reflective coatings for photoresists
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US5476750A (en) * 1992-12-29 1995-12-19 Hoechst Celanese Corporation Metal ion reduction in the raw materials and using a Lewis base to control molecular weight of novolak resin to be used in positive photoresists
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US5731385A (en) * 1993-12-16 1998-03-24 International Business Machines Corporation Polymeric dyes for antireflective coatings
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US6025268A (en) * 1996-06-26 2000-02-15 Advanced Micro Devices, Inc. Method of etching conductive lines through an etch resistant photoresist mask
US5652317A (en) * 1996-08-16 1997-07-29 Hoechst Celanese Corporation Antireflective coatings for photoresist compositions
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US5965461A (en) * 1997-08-01 1999-10-12 Advanced Micro Devices, Inc. Controlled linewidth reduction during gate pattern formation using a spin-on barc
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EP1966251A1 (de) 2005-12-22 2008-09-10 Dupont Electronic Polymers L.P. Verfahren zur herstellung stabiler fotolackzusammensetzungen
US8083953B2 (en) 2007-03-06 2011-12-27 Micron Technology, Inc. Registered structure formation via the application of directed thermal energy to diblock copolymer films
US8557128B2 (en) 2007-03-22 2013-10-15 Micron Technology, Inc. Sub-10 nm line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers
US8097175B2 (en) 2008-10-28 2012-01-17 Micron Technology, Inc. Method for selectively permeating a self-assembled block copolymer, method for forming metal oxide structures, method for forming a metal oxide pattern, and method for patterning a semiconductor structure
US7959975B2 (en) * 2007-04-18 2011-06-14 Micron Technology, Inc. Methods of patterning a substrate
US8294139B2 (en) 2007-06-21 2012-10-23 Micron Technology, Inc. Multilayer antireflection coatings, structures and devices including the same and methods of making the same
US8372295B2 (en) 2007-04-20 2013-02-12 Micron Technology, Inc. Extensions of self-assembled structures to increased dimensions via a “bootstrap” self-templating method
US8404124B2 (en) 2007-06-12 2013-03-26 Micron Technology, Inc. Alternating self-assembling morphologies of diblock copolymers controlled by variations in surfaces
US8080615B2 (en) 2007-06-19 2011-12-20 Micron Technology, Inc. Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide
US8999492B2 (en) 2008-02-05 2015-04-07 Micron Technology, Inc. Method to produce nanometer-sized features with directed assembly of block copolymers
US8101261B2 (en) 2008-02-13 2012-01-24 Micron Technology, Inc. One-dimensional arrays of block copolymer cylinders and applications thereof
US8426313B2 (en) 2008-03-21 2013-04-23 Micron Technology, Inc. Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference
US8425982B2 (en) 2008-03-21 2013-04-23 Micron Technology, Inc. Methods of improving long range order in self-assembly of block copolymer films with ionic liquids
US8114301B2 (en) 2008-05-02 2012-02-14 Micron Technology, Inc. Graphoepitaxial self-assembly of arrays of downward facing half-cylinders
JP5556046B2 (ja) * 2009-03-31 2014-07-23 栗田工業株式会社 粗イオン交換樹脂の精製用の処理液
US8900963B2 (en) 2011-11-02 2014-12-02 Micron Technology, Inc. Methods of forming semiconductor device structures, and related structures
US9087699B2 (en) 2012-10-05 2015-07-21 Micron Technology, Inc. Methods of forming an array of openings in a substrate, and related methods of forming a semiconductor device structure
US9229328B2 (en) 2013-05-02 2016-01-05 Micron Technology, Inc. Methods of forming semiconductor device structures, and related semiconductor device structures
US9177795B2 (en) 2013-09-27 2015-11-03 Micron Technology, Inc. Methods of forming nanostructures including metal oxides
JP6618613B2 (ja) * 2016-04-28 2019-12-11 富士フイルム株式会社 処理液及び処理液収容体

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SG52770A1 (en) * 1992-07-10 1998-09-28 Hoechst Celanese Corp Metal ion reduction in top anti-reflective coatings for photoresists
JP3727335B2 (ja) * 1992-11-25 2005-12-14 Ａｚエレクトロニックマテリアルズ株式会社 フォトレジスト用底部反射防止塗料における金属イオンの低減
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US5476750A (en) * 1992-12-29 1995-12-19 Hoechst Celanese Corporation Metal ion reduction in the raw materials and using a Lewis base to control molecular weight of novolak resin to be used in positive photoresists

Also Published As

Publication number Publication date
JPH08503983A (ja) 1996-04-30
HK1001101A1 (en) 1998-05-22
EP0671025A1 (de) 1995-09-13
SG49596A1 (en) 1998-06-15
US5580700A (en) 1996-12-03
WO1994012912A1 (en) 1994-06-09
DE69313132T2 (de) 1997-12-11
JP3727335B2 (ja) 2005-12-14
EP0671025B1 (de) 1997-08-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AZ ELECTRONIC MATERIALS USA CORP. (N.D.GES.D. STAA

8328 Change in the person/name/address of the agent

Representative=s name: PATENTANWAELTE ISENBRUCK BOESL HOERSCHLER WICHMANN HU