JPS5624042A - Preparation of drying agent by utilizing used cation exchange resin - Google Patents
Preparation of drying agent by utilizing used cation exchange resinInfo
- Publication number
- JPS5624042A JPS5624042A JP9869179A JP9869179A JPS5624042A JP S5624042 A JPS5624042 A JP S5624042A JP 9869179 A JP9869179 A JP 9869179A JP 9869179 A JP9869179 A JP 9869179A JP S5624042 A JPS5624042 A JP S5624042A
- Authority
- JP
- Japan
- Prior art keywords
- cation exchange
- exchange resin
- drying agent
- passed
- used cation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Gases (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
Abstract
PURPOSE: To reutilize a used cation exchange resin which has been conventionally abandoned, as a valuable drying agent by sufficiently washing a used cation exchange resin treated by a strong acid solution and, moreover, by a strong alkali solution and, thereafter, drying the same.
CONSTITUTION: To a used cation exchange resin, a strong acid solution such as hydrogen chloride or a strong acid solution and a strong alkali solution such as NaOH is passed to remove impurities adsorbed and adhered in fine pores or to a surface of aformentioned resin particle. Subsequently, to this cation exchange resin treated by the chemical solution, a predetermined amount of water is passed to extrude said chemical solution and, succeedingly, a predetermined amount of water is passed to wash said cation exchange resin. Subsequently, the cation exchange resin completed from washing is drained and dried by air to reduce a moisture content to about 30% and, thereafter, dried at a temp. of about 110°C in the conventional dryer to lower the moisture content to 5% or less, especially, 2% or less to obtain a drying agent.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9869179A JPS5624042A (en) | 1979-08-03 | 1979-08-03 | Preparation of drying agent by utilizing used cation exchange resin |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9869179A JPS5624042A (en) | 1979-08-03 | 1979-08-03 | Preparation of drying agent by utilizing used cation exchange resin |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5624042A true JPS5624042A (en) | 1981-03-07 |
Family
ID=14226524
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9869179A Pending JPS5624042A (en) | 1979-08-03 | 1979-08-03 | Preparation of drying agent by utilizing used cation exchange resin |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5624042A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05234876A (en) * | 1991-09-03 | 1993-09-10 | Ocg Microelectron Materials Inc | Method for removing metal impurity from resist component |
JPH05234877A (en) * | 1991-09-03 | 1993-09-10 | Ocg Microelectron Materials Inc | Method for removing metallic impurities from resist component |
JPH05234878A (en) * | 1991-09-03 | 1993-09-10 | Ocg Microelectron Materials Inc | Method for removing impurities from resist component |
JPH08503983A (en) * | 1992-11-25 | 1996-04-30 | ヘキスト、セラニーズ、コーポレーション | Reduction of metal ions in bottom antireflective coatings for photoresists |
JPH08504279A (en) * | 1992-07-10 | 1996-05-07 | ヘキスト、セラニーズ、コーポレーション | Reduction of metal ion content in top anti-reflective coatings for photoresists |
-
1979
- 1979-08-03 JP JP9869179A patent/JPS5624042A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05234876A (en) * | 1991-09-03 | 1993-09-10 | Ocg Microelectron Materials Inc | Method for removing metal impurity from resist component |
JPH05234877A (en) * | 1991-09-03 | 1993-09-10 | Ocg Microelectron Materials Inc | Method for removing metallic impurities from resist component |
JPH05234878A (en) * | 1991-09-03 | 1993-09-10 | Ocg Microelectron Materials Inc | Method for removing impurities from resist component |
JPH08504279A (en) * | 1992-07-10 | 1996-05-07 | ヘキスト、セラニーズ、コーポレーション | Reduction of metal ion content in top anti-reflective coatings for photoresists |
JPH08503983A (en) * | 1992-11-25 | 1996-04-30 | ヘキスト、セラニーズ、コーポレーション | Reduction of metal ions in bottom antireflective coatings for photoresists |
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