DE69312436D1 - Verdampfung von flüssigen Reaktionspartnern für CVD - Google Patents
Verdampfung von flüssigen Reaktionspartnern für CVDInfo
- Publication number
- DE69312436D1 DE69312436D1 DE69312436T DE69312436T DE69312436D1 DE 69312436 D1 DE69312436 D1 DE 69312436D1 DE 69312436 T DE69312436 T DE 69312436T DE 69312436 T DE69312436 T DE 69312436T DE 69312436 D1 DE69312436 D1 DE 69312436D1
- Authority
- DE
- Germany
- Prior art keywords
- cvd
- evaporation
- liquid reactants
- reactants
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
- B01F23/10—Mixing gases with gases
- B01F23/12—Mixing gases with gases with vaporisation of a liquid
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S261/00—Gas and liquid contact apparatus
- Y10S261/65—Vaporizers
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US99075592A | 1992-12-15 | 1992-12-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69312436D1 true DE69312436D1 (de) | 1997-08-28 |
DE69312436T2 DE69312436T2 (de) | 1998-02-05 |
Family
ID=25536507
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69312436T Expired - Lifetime DE69312436T2 (de) | 1992-12-15 | 1993-12-14 | Verdampfung von flüssigen Reaktionspartnern für CVD |
Country Status (4)
Country | Link |
---|---|
US (4) | US6224681B1 (de) |
EP (1) | EP0602595B1 (de) |
JP (2) | JP3606892B2 (de) |
DE (1) | DE69312436T2 (de) |
Families Citing this family (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0602595B1 (de) * | 1992-12-15 | 1997-07-23 | Applied Materials, Inc. | Verdampfung von flüssigen Reaktionspartnern für CVD |
US5925189A (en) * | 1995-12-06 | 1999-07-20 | Applied Materials, Inc. | Liquid phosphorous precursor delivery apparatus |
DE19755643C2 (de) * | 1997-12-15 | 2001-05-03 | Martin Schmaeh | Vorrichtung zum Verdampfen von Flüssigkeit und zum Herstellen von Gas/Dampf-Gemischen |
US6296711B1 (en) | 1998-04-14 | 2001-10-02 | Cvd Systems, Inc. | Film processing system |
US6136725A (en) * | 1998-04-14 | 2000-10-24 | Cvd Systems, Inc. | Method for chemical vapor deposition of a material on a substrate |
US6817381B2 (en) * | 1999-08-24 | 2004-11-16 | Tokyo Electron Limited | Gas processing apparatus, gas processing method and integrated valve unit for gas processing apparatus |
KR100649852B1 (ko) * | 1999-09-09 | 2006-11-24 | 동경 엘렉트론 주식회사 | 기화기 및 이것을 이용한 반도체 제조 시스템 |
JP4393677B2 (ja) * | 1999-09-14 | 2010-01-06 | 株式会社堀場エステック | 液体材料気化方法および装置並びに制御バルブ |
US7163197B2 (en) * | 2000-09-26 | 2007-01-16 | Shimadzu Corporation | Liquid substance supply device for vaporizing system, vaporizer, and vaporization performance appraisal method |
TW560029B (en) * | 2001-01-18 | 2003-11-01 | Watanabe M & Co Ltd | Carburetor, various types of devices using the carburetor, and method vaporization |
US6718126B2 (en) * | 2001-09-14 | 2004-04-06 | Applied Materials, Inc. | Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition |
US7780785B2 (en) * | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
JP3881569B2 (ja) * | 2002-03-13 | 2007-02-14 | 株式会社堀場エステック | 液体材料気化装置 |
US7186385B2 (en) | 2002-07-17 | 2007-03-06 | Applied Materials, Inc. | Apparatus for providing gas to a processing chamber |
US7192486B2 (en) * | 2002-08-15 | 2007-03-20 | Applied Materials, Inc. | Clog-resistant gas delivery system |
JP3854555B2 (ja) * | 2002-08-30 | 2006-12-06 | 東京エレクトロン株式会社 | 薄膜形成装置および薄膜形成方法 |
US7534363B2 (en) * | 2002-12-13 | 2009-05-19 | Lam Research Corporation | Method for providing uniform removal of organic material |
US7169231B2 (en) * | 2002-12-13 | 2007-01-30 | Lam Research Corporation | Gas distribution system with tuning gas |
US20040112540A1 (en) * | 2002-12-13 | 2004-06-17 | Lam Research Corporation | Uniform etch system |
US20050056216A1 (en) * | 2003-09-15 | 2005-03-17 | Intel Corporation | Precursor delivery system |
KR100541814B1 (ko) * | 2003-09-15 | 2006-01-11 | 삼성전자주식회사 | 화학기상증착장치 |
DE10345824A1 (de) * | 2003-09-30 | 2005-05-04 | Infineon Technologies Ag | Anordnung zur Abscheidung von atomaren Schichten auf Substraten |
US20050095859A1 (en) * | 2003-11-03 | 2005-05-05 | Applied Materials, Inc. | Precursor delivery system with rate control |
US7115508B2 (en) * | 2004-04-02 | 2006-10-03 | Applied-Materials, Inc. | Oxide-like seasoning for dielectric low k films |
US7112541B2 (en) * | 2004-05-06 | 2006-09-26 | Applied Materials, Inc. | In-situ oxide capping after CVD low k deposition |
JP4696561B2 (ja) * | 2005-01-14 | 2011-06-08 | 東京エレクトロン株式会社 | 気化装置及び処理装置 |
JP2006222133A (ja) * | 2005-02-08 | 2006-08-24 | Hitachi Cable Ltd | 原料ガス供給方法及びその装置 |
US7273823B2 (en) * | 2005-06-03 | 2007-09-25 | Applied Materials, Inc. | Situ oxide cap layer development |
JP2007031751A (ja) * | 2005-07-25 | 2007-02-08 | Renesas Technology Corp | 薬液供給方法 |
US8755679B2 (en) | 2006-04-05 | 2014-06-17 | Horiba Stec, Co., Ltd. | Liquid material vaporizer |
KR101058976B1 (ko) * | 2006-04-05 | 2011-08-23 | 가부시키가이샤 호리바 에스텍 | 액체재료 기화장치 |
US7932181B2 (en) * | 2006-06-20 | 2011-04-26 | Lam Research Corporation | Edge gas injection for critical dimension uniformity improvement |
JP4605790B2 (ja) * | 2006-06-27 | 2011-01-05 | 株式会社フジキン | 原料の気化供給装置及びこれに用いる圧力自動調整装置。 |
US7775508B2 (en) * | 2006-10-31 | 2010-08-17 | Applied Materials, Inc. | Ampoule for liquid draw and vapor draw with a continuous level sensor |
US7975718B2 (en) * | 2007-04-16 | 2011-07-12 | Applied Materials, Inc. | In-situ monitor of injection valve |
US7883745B2 (en) * | 2007-07-30 | 2011-02-08 | Micron Technology, Inc. | Chemical vaporizer for material deposition systems and associated methods |
DE102007038278B4 (de) * | 2007-08-08 | 2013-09-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Stofftransport und Ereigniskontrolle in Systemen mit piezoelektrisch aktivierter Tröpfchenemission und Kombinationsmöglichkeiten von Trägermatrix und zu dosierendem Stoff |
CN101903561B (zh) * | 2007-12-19 | 2012-08-22 | 株式会社堀场Stec | 液体材料气化装置 |
JP4934117B2 (ja) * | 2008-09-03 | 2012-05-16 | 東京エレクトロン株式会社 | ガス処理装置、ガス処理方法、および記憶媒体 |
KR101502415B1 (ko) * | 2008-09-12 | 2015-03-13 | 엠 에스피 코포레이션 | 액체 전구물질 분무 방법 및 장치 |
US8146896B2 (en) | 2008-10-31 | 2012-04-03 | Applied Materials, Inc. | Chemical precursor ampoule for vapor deposition processes |
WO2010077606A1 (en) * | 2008-12-08 | 2010-07-08 | Rensselaer Polytechnic Institute | Redox-initiated cationic polymerization using vapor-state reducing agents |
US8151814B2 (en) * | 2009-01-13 | 2012-04-10 | Asm Japan K.K. | Method for controlling flow and concentration of liquid precursor |
WO2011040067A1 (ja) * | 2009-09-30 | 2011-04-07 | シーケーディ株式会社 | 液体気化システム |
WO2011097238A2 (en) * | 2010-02-05 | 2011-08-11 | Msp Corporation | Fine droplet atomizer for liquid precursor vaporization |
DE102010056021B3 (de) * | 2010-12-23 | 2012-04-19 | Centrotherm Sitec Gmbh | Düsenanordnung und CVD-Reaktor |
KR101845580B1 (ko) | 2011-01-19 | 2018-04-04 | 시케이디 가부시키가이샤 | 액체 기화기 |
KR101892758B1 (ko) | 2011-09-30 | 2018-10-04 | 시케이디 가부시키가이샤 | 액체 제어 장치 |
JP5989944B2 (ja) | 2011-09-30 | 2016-09-07 | Ckd株式会社 | 液体制御装置 |
JP5973178B2 (ja) * | 2012-02-01 | 2016-08-23 | Ckd株式会社 | 液体制御装置 |
US8783652B2 (en) * | 2012-03-12 | 2014-07-22 | Mps Corporation | Liquid flow control for film deposition |
KR101351313B1 (ko) * | 2012-04-06 | 2014-01-14 | 주식회사 지에스티에스 | 기화 장치 |
KR101363354B1 (ko) * | 2012-05-01 | 2014-02-17 | 주식회사 유니텍스 | 소스 컨테이너 및 기상 증착용 반응로 |
JP5919115B2 (ja) | 2012-07-12 | 2016-05-18 | Ckd株式会社 | 液体制御装置、及び液体制御装置に適用される網状体組立体 |
WO2017009997A1 (ja) * | 2015-07-16 | 2017-01-19 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及び気化システム |
JP6695701B2 (ja) * | 2016-02-03 | 2020-05-20 | 株式会社Screenホールディングス | 処理液気化装置と基板処理装置 |
JP6748586B2 (ja) * | 2016-07-11 | 2020-09-02 | 東京エレクトロン株式会社 | ガス供給システム、基板処理システム及びガス供給方法 |
JP7281285B2 (ja) * | 2019-01-28 | 2023-05-25 | 株式会社堀場エステック | 濃度制御装置、及び、ゼロ点調整方法、濃度制御装置用プログラム |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4496609A (en) * | 1969-10-15 | 1985-01-29 | Applied Materials, Inc. | Chemical vapor deposition coating process employing radiant heat and a susceptor |
US3930908A (en) | 1974-09-30 | 1976-01-06 | Rca Corporation | Accurate control during vapor phase epitaxy |
US4232063A (en) | 1978-11-14 | 1980-11-04 | Applied Materials, Inc. | Chemical vapor deposition reactor and process |
EP0058571A1 (de) | 1981-02-18 | 1982-08-25 | National Research Development Corporation | Verfahren und Vorrichtung zum Zuführen einer kontrollierten Menge eines Reaktanten bei einem Dampfphasen-Abscheidungsverfahren |
JPS58125633A (ja) * | 1982-01-18 | 1983-07-26 | Nippon Telegr & Teleph Corp <Ntt> | ガラス微粒子製造におけるガス供給方法 |
US4579080A (en) | 1983-12-09 | 1986-04-01 | Applied Materials, Inc. | Induction heated reactor system for chemical vapor deposition |
US4668365A (en) | 1984-10-25 | 1987-05-26 | Applied Materials, Inc. | Apparatus and method for magnetron-enhanced plasma-assisted chemical vapor deposition |
US4761269A (en) | 1986-06-12 | 1988-08-02 | Crystal Specialties, Inc. | Apparatus for depositing material on a substrate |
US5000113A (en) | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
JP2846891B2 (ja) | 1988-06-03 | 1999-01-13 | 東京エレクトロン株式会社 | 処理装置 |
JPH0784662B2 (ja) * | 1989-12-12 | 1995-09-13 | アプライドマテリアルズジャパン株式会社 | 化学的気相成長方法とその装置 |
US5078092A (en) * | 1989-12-22 | 1992-01-07 | Corning Incorporated | Flash vaporizer system for use in manufacturing optical waveguide fiber |
US4970093A (en) * | 1990-04-12 | 1990-11-13 | University Of Colorado Foundation | Chemical deposition methods using supercritical fluid solutions |
US5204314A (en) * | 1990-07-06 | 1993-04-20 | Advanced Technology Materials, Inc. | Method for delivering an involatile reagent in vapor form to a CVD reactor |
JPH0795527B2 (ja) * | 1991-02-05 | 1995-10-11 | 株式会社リンテック | 液体原料用気化供給器 |
US5203925A (en) * | 1991-06-20 | 1993-04-20 | Matsushita Electric Industrial Co., Ltd. | Apparatus for producing a thin film of tantalum oxide |
JPH0582507A (ja) * | 1991-09-18 | 1993-04-02 | Applied Materials Japan Kk | 液体気化バルブ |
EP0602595B1 (de) * | 1992-12-15 | 1997-07-23 | Applied Materials, Inc. | Verdampfung von flüssigen Reaktionspartnern für CVD |
-
1993
- 1993-12-14 EP EP93120131A patent/EP0602595B1/de not_active Expired - Lifetime
- 1993-12-14 DE DE69312436T patent/DE69312436T2/de not_active Expired - Lifetime
- 1993-12-15 JP JP31546693A patent/JP3606892B2/ja not_active Expired - Lifetime
-
1995
- 1995-12-19 US US08/574,999 patent/US6224681B1/en not_active Expired - Lifetime
-
2001
- 2001-07-31 US US09/919,633 patent/US6783118B2/en not_active Expired - Fee Related
-
2002
- 2002-11-26 US US10/305,827 patent/US7055808B2/en not_active Expired - Fee Related
-
2003
- 2003-11-12 JP JP2003383001A patent/JP3607278B2/ja not_active Expired - Lifetime
-
2004
- 2004-04-02 US US10/817,396 patent/US7055809B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20040188866A1 (en) | 2004-09-30 |
US6224681B1 (en) | 2001-05-01 |
JP2004115920A (ja) | 2004-04-15 |
EP0602595A1 (de) | 1994-06-22 |
US20030226505A1 (en) | 2003-12-11 |
US20020014207A1 (en) | 2002-02-07 |
US7055808B2 (en) | 2006-06-06 |
US6783118B2 (en) | 2004-08-31 |
JP3606892B2 (ja) | 2005-01-05 |
JP3607278B2 (ja) | 2005-01-05 |
DE69312436T2 (de) | 1998-02-05 |
JPH06220641A (ja) | 1994-08-09 |
US7055809B2 (en) | 2006-06-06 |
EP0602595B1 (de) | 1997-07-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |