EP0602595A1 - Verdampfung von flüssigen Reaktionspartnern für CVD - Google Patents

Verdampfung von flüssigen Reaktionspartnern für CVD Download PDF

Info

Publication number
EP0602595A1
EP0602595A1 EP93120131A EP93120131A EP0602595A1 EP 0602595 A1 EP0602595 A1 EP 0602595A1 EP 93120131 A EP93120131 A EP 93120131A EP 93120131 A EP93120131 A EP 93120131A EP 0602595 A1 EP0602595 A1 EP 0602595A1
Authority
EP
European Patent Office
Prior art keywords
liquid
aperture
flow rate
inlet port
vaporizer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP93120131A
Other languages
English (en)
French (fr)
Other versions
EP0602595B1 (de
Inventor
Visweswaren Sivaramakrishnan
John M. White
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of EP0602595A1 publication Critical patent/EP0602595A1/de
Application granted granted Critical
Publication of EP0602595B1 publication Critical patent/EP0602595B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
    • B01F23/10—Mixing gases with gases
    • B01F23/12—Mixing gases with gases with vaporisation of a liquid
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S261/00—Gas and liquid contact apparatus
    • Y10S261/65—Vaporizers

Definitions

  • the present invention relates generally to a device for vaporizing a liquid at a controlled rate. More specifically, it relates to a device for vaporizing a liquid with a rapid pressure drop and mixing the vaporized liquid with a carrier gas in a manner which allows independent control of the flow rates of the liquid and carrier gas.
  • the invention is particularly suited for supplying vaporized reactants to the reaction chamber of a chemical vapor deposition system.
  • Chemical vapor deposition (CVD) processes are widely used in the deposition of thin films used in semiconductor devices and integrated circuits. Such processes involve deposition resulting from a reaction of chemical vapors homogeneously or heterogeneously on a substrate. The reaction rate is controlled, e.g., by temperature, pressure and reactant gas flow rates.
  • the use of low vapor pressure liquids as precursors for such processes has several advantages and has become more common.
  • Prior CVD processes involve transport of low vapor pressure liquid using a bubbler or boiler.
  • a carrier gas saturates the liquid and transports the vapor.
  • the amount of vapor transported depends on the downstream pressure, carrier gas flow, vapor pressure in the ampoule holding the source liquid source, and the like.
  • the amount of vapor transported is not an independent parameter and therefore is difficult to control.
  • CVD processes using a bubbler or boiler have not demonstrated the ability to consistently control the flow rate of the vaporized reactant, which decreases the quality of films produced by these processes.
  • the liquid is heated, and the vapor formed is controlled using a high temperature gas flow controller.
  • the amount of vapor transported depends on the downstream chamber pressure and the boiler temperature.
  • the vapor pressure of liquids commonly used in the deposition of semiconductor films e.g.,tetraethylorthosilane TEOS
  • the vapor pressure of liquids commonly used in the deposition of semiconductor films is very small at normal operating temperatures; as a result, vapor transport limitations occur when a boiler is used in high pressure (e.g., atmospheric pressure) CVD processes. Heating the boiler to the liquid boiling temperature could obviously improve the vapor transport for such processes, but the boiler temperature is limited by the reliability of the downstream hardware.
  • the present invention addresses that need.
  • the invention features a vaporizer which accepts a carrier gas and a pressurized liquid.
  • An internal cavity receives the carrier gas through a carrier aperture and combines the carrier gas with vapor formed from liquid received through a liquid aperture.
  • the mixed gas and vapor are exhausted out of the cavity via a third aperture.
  • the liquid is vaporized by the pressure differential between the liquid and vapor: a closure element which is substantially wider than the liquid aperture is disposed adjacent to the liquid aperture so that a pressure gradient forms between the liquid aperture and the remainder of the cavity. The liquid passing through this pressure gradient vaporizes due to expansion.
  • An advantage of the invention is that the vaporizer forms vapor by expansion in a pressure gradient, rather than evaporation, and therefore can vaporize liquid at high flow rates such as those needed for some semiconductor fabrication processes.
  • the closure element is a diaphragm movable relative to the liquid aperture to increase or decrease the flow rate of the liquid.
  • the closure element is moved by an electrically controlled actuator such as a piezoelectric element.
  • an electrically controlled actuator such as a piezoelectric element.
  • a liquid flow meter is connected to measure the flow rate of liquid into the liquid inlet port.
  • a feedback control system compares the measured flow rate to a selected value and controls the piezoelectric actuator so that the flow rate approximates the selected value.
  • An advantage of this embodiment is that the liquid flow rate is controlled solely by the movement of the diaphragm, so that (unlike the vaporization systems described above) the liquid flow rate is independent of the carrier gas flow rate and therefore can be more accurately controlled.
  • a heater heats at least a portion of the valve body near to the cavity so as to inhibit the liquid, which has cooled due to expansion, from condensing on the walls of the cavity after it has vaporized.
  • a liquid delivery system 10 which uses a specially designed vaporizer 12 for both liquid flow control and vaporization at a single stage. Liquid flow rate is controlled by a closed loop system between a liquid flow monitor 14 and the vaporizer 12.
  • a liquid reactant 11 such as TEOS, trimethyl borate, tetraethyl borate, tetraethyl phosphate, tetraethyl phosphite, tetrakis(dimethylamino)titanium diethyl analog, water or the like is delivered from a liquid bulk delivery tank 16 to a CVD process chamber 18 of a conventional thermal or plasma-enhanced type.
  • a CVD process chamber 18 of a conventional thermal or plasma-enhanced type.
  • a chamber 18 is described in the following commonly owned issued U.S.
  • the liquid bulk delivery tank 16 has a dip tube 20 extending into the tank 16 and a source 24 providing a pressurized gas such as helium to "head" space 26 at the top of tank 16, above the liquid reactant 11, for driving the liquid from the tank.
  • the liquid flow monitor 14 is connected between the liquid bulk delivery tank 16 and liquid inlet 30 of the vaporizer 12.
  • a controlled amount of liquid is injected by the vaporizer 12, which converts the liquid to vapor by expansion and transports the vapor to the process chamber 18 by means of a carrier gas, such as helium, nitrogen or argon.
  • a control signal from the liquid flow monitor 14 is fed back via control electronics 32 to the liquid flow control input of vaporizer 12.
  • a gas tank 34 containing the carrier gas is connected to gas inlet 36 of the vaporizer 12 through a mass flow controller 38 which regulates the gas flow rate.
  • liquid 11 may be toxic and/or caustic.
  • a purge line 39 is connected between the gas tank 34 and the liquid flow monitor to allow the operator to purge system 10 of the reactant liquid 11 and its vapor before servicing.
  • a vacuum line 41 is used in conjunction with purge line 39 to evacuate liquid and vapor from the system. (Vacuum line 41 is coupled to the vacuum system of the CVD process chamber.)
  • Remotely controllable (e.g., pneumatic) valves 13 and manual valves 15 are inserted on each line. These valves are opened and closed to enable normal operation and purge and evacuation operations. To enhance safety and fault-tolerance, each line having a remotely controlled valve 13 also has a manual valve 15 which can be closed manually if the remotely controlled valve fails.
  • pneumatic valves 13 and manual valves 15 are inserted on each line. These valves are opened and closed to enable normal operation and purge and evacuation operations.
  • each line having a remotely controlled valve 13 also has a manual valve 15 which can be closed manually if the remotely controlled valve fails.
  • vaporizer 12 Details of the vaporizer 12 are shown in Figs. 2A-2D.
  • liquid inlet port 30 is connected by passage 40 through valve body 42 to shut off valve bore 44, which contains a piston 46.
  • piston 46 seats against the inner face of valve bore 44 (as shown in Fig. 2A), preventing liquid flow.
  • Any suitable actuating means can be used to move valve piston 46 along bore 44 into and out of this seated position.
  • a bellows spring 45 generates pressure tending to seat piston 46 against the valve bore 44 and close the shut off valve.
  • the shut off valve is opened by driving compressed air into a cavity 43 via opening 41', generating force on piston 46 and moving it out of bore 44, allowing liquid to flow.
  • Other types of valves can be used for shut off valve, e.g., a diaphragm valve.
  • a typical piezoelectric valve must be supplied with electrical power, e.g., ⁇ 15 Volt supplies, to operate properly; typically the valve will relax to a fully open state when electrical power is removed. Thus, to protect against electrical failure, it is prudent to connect a piezoelectric valve in series with a positive shut off valve such as that provided by piston 46. Alternatively, a different proportional control valve could be substituted for the piezo valve, possibly providing both flow control and positive shut-off.
  • gas inlet port 36 is connected by passage 58 through valve body 42 to control valve bore 50.
  • Outlet port 60 is connected by passage 62 through valve body 42 to the control valve bore 50.
  • Housing 57 retains the diaphragm 54 in proximity to the valve body 42.
  • Diaphragm 54 has a cylindrical center piston 61 which is positioned parallel to, and an adjustable close spacing from, the surface of valve seat 53.
  • Diaphragm 54 also has a thick annular edge 63 which rests on a circular lip 56 formed in the valve body 42.
  • Diaphragm 54 is manufactured of stainless steel or a similarly flexible metal.
  • Movable "spider" portion 59 of diaphragm 54 comprises a thin (e.g. 40-50 mil), elastic, annular sheet or membrane connecting the thick annular edge 63 and the cylindrical center piston 61.
  • Annular O-ring seal 55 couples to the annular edge of diaphragm 54 and thereby contains the vapor/carrier mixture within valve bore 50.
  • Fig. 2C also illustrates: circular seat 53 which engages the face of diaphragm 54 (as discussed below with reference to Fig. 2D); circular lip 56 which engages the thick annular edge 63 of diaphragm 54; and the circular center edge of housing 57.
  • liquid reactant 11 such as TEOS is pressurized by source 24 (Fig. 1) at, e.g., from about 2 to about 30 pounds per square inch (psi).
  • the shut off valve is open (i.e., piston 46 is drawn out of bore 44, as shown)
  • the liquid enters liquid inlet port 30, flows via liquid inlet passages 40 and 48, and is injected out of the opening 49 into a vaporizing area 51 formed in the control valve bore 50 between the diaphragm 54 and seat 53 which rises out of valve body 42 and which contains opening 49.
  • turbulent vaporization which can be detected by oscillating flow measured by flow meter 14, may occur if the diameter of the seat 53 is too large.
  • the diameter of the seat is approximately 0.5 cm. It has also been found that the more efficient vaporization can be achieved if the diameter of the face of the diaphragm 54 coupled to the seat 53 is larger than the diameter of the seat itself. In one embodiment, the proportion of these two diameters is as illustrated in Fig. 2D.
  • the amount of liquid 11 injected into the vaporizing area 51 is controlled by position of the diaphragm 54 relative to the opening 49, which is in turn controlled by the electrical excitation of the piezoelectric member 52.
  • the surface of seat 53 is coplanar with the upper surface of lip 56.
  • the line extending across cavity 50, which represents the upper surface of lip 56, is exactly collinear with the line representing the upper surface of seat 53.
  • control electronics 32 of Fig. 1 Details of the control electronics 32 of Fig. 1 are shown in Fig. 3. Feedback control is used to control the piezo valve because the voltage-to-opening transfer function of the piezo valve can be difficult to control because it is non-linear, has hysteresis, and drifts with changes in temperature, pressure, and liquid flow rates.
  • the control electronics 32 include a proportional-integral-derivative (PID) control circuit 72 which generates an output on line 80 which is a function of: the difference between the signals on lines 76 and 78; the integral of this difference; and the derivative of this difference.
  • PID proportional-integral-derivative
  • the input-output relationship of the PID circuit is chosen to maximize the stability and tracking of the circuit and minimize response time.
  • an auto-tune or adaptive filtered PID circuit is used so that the control function is continuously optimized to the system response.
  • Any commercially available adaptive PID circuit for example the PID sold by Watlow Controls under part no. 965A, can be suitably used in the Fig. 3 application.
  • the inputs to the PID 72 are a 0 to 5 volt flow output signal supplied by the liquid flow monitor on line 76, and a 0 to 5 volt set point signal on line 78.
  • the output of PID 72 is a 0 to 5 volt position input signal which is supplied to the piezo valve on line 80.
  • the PID 72 drives the position signal on line 80 so that the flow monitor output signal on line 76 is equal to the set point signal on line 78. If the liquid flow rate is below the desired level, the flow output signal on line 76 and the set point signal on line 78 will differ, and the PID 72 will drive the vaporizer 12 to increase the liquid flow by opening the piezoelectric valve. If the liquid flow rate is above the desired level, PID 72 will drive the vaporizer 12 to decrease liquid flow by closing the piezoelectric valve.
  • the liquid mass flow can be controlled separately from the liquid vaporization.
  • the liquid flow monitor 14 of Fig. 1 may be replaced with a liquid mass flow controller having a low pressure differential, and an additional high-temperature monitor may be inserted in line 47.
  • the control electronics may then contain separate sections: a first section controlling the liquid mass flow to a desired value by driving the input of the liquid mass flow controller; and a second section controlling the vaporization at the piezo valve of vaporizer 12 in response to measurements generated by the high-temperature monitor.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
EP93120131A 1992-12-15 1993-12-14 Verdampfung von flüssigen Reaktionspartnern für CVD Expired - Lifetime EP0602595B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US99075592A 1992-12-15 1992-12-15
US990755 1992-12-15

Publications (2)

Publication Number Publication Date
EP0602595A1 true EP0602595A1 (de) 1994-06-22
EP0602595B1 EP0602595B1 (de) 1997-07-23

Family

ID=25536507

Family Applications (1)

Application Number Title Priority Date Filing Date
EP93120131A Expired - Lifetime EP0602595B1 (de) 1992-12-15 1993-12-14 Verdampfung von flüssigen Reaktionspartnern für CVD

Country Status (4)

Country Link
US (4) US6224681B1 (de)
EP (1) EP0602595B1 (de)
JP (2) JP3606892B2 (de)
DE (1) DE69312436T2 (de)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0923985A1 (de) * 1997-12-15 1999-06-23 Martin Dr. Schmäh Vorrichtung zum Verdampfen von Flüssigkeiten und zum Herstellen von Gas/Dampfgemischen
US5925189A (en) * 1995-12-06 1999-07-20 Applied Materials, Inc. Liquid phosphorous precursor delivery apparatus
EP1085106A1 (de) * 1999-09-14 2001-03-21 Stec Inc. Verfahren und Vorrichtung zum Verdampfen einer Flüssigkeit
WO2005028702A2 (en) * 2003-09-15 2005-03-31 Intel Corporation Precursor delivery system

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0602595B1 (de) * 1992-12-15 1997-07-23 Applied Materials, Inc. Verdampfung von flüssigen Reaktionspartnern für CVD
US6296711B1 (en) 1998-04-14 2001-10-02 Cvd Systems, Inc. Film processing system
US6136725A (en) * 1998-04-14 2000-10-24 Cvd Systems, Inc. Method for chemical vapor deposition of a material on a substrate
US6817381B2 (en) * 1999-08-24 2004-11-16 Tokyo Electron Limited Gas processing apparatus, gas processing method and integrated valve unit for gas processing apparatus
KR100649852B1 (ko) * 1999-09-09 2006-11-24 동경 엘렉트론 주식회사 기화기 및 이것을 이용한 반도체 제조 시스템
US7163197B2 (en) * 2000-09-26 2007-01-16 Shimadzu Corporation Liquid substance supply device for vaporizing system, vaporizer, and vaporization performance appraisal method
JPWO2002058141A1 (ja) * 2001-01-18 2004-05-27 株式会社渡邊商行 気化器及びそれを用いた各種装置並びに気化方法
US6718126B2 (en) * 2001-09-14 2004-04-06 Applied Materials, Inc. Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition
US7780785B2 (en) * 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
JP3881569B2 (ja) * 2002-03-13 2007-02-14 株式会社堀場エステック 液体材料気化装置
US7186385B2 (en) 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
US7192486B2 (en) * 2002-08-15 2007-03-20 Applied Materials, Inc. Clog-resistant gas delivery system
JP3854555B2 (ja) * 2002-08-30 2006-12-06 東京エレクトロン株式会社 薄膜形成装置および薄膜形成方法
US20040112540A1 (en) * 2002-12-13 2004-06-17 Lam Research Corporation Uniform etch system
US7534363B2 (en) * 2002-12-13 2009-05-19 Lam Research Corporation Method for providing uniform removal of organic material
US7169231B2 (en) * 2002-12-13 2007-01-30 Lam Research Corporation Gas distribution system with tuning gas
KR100541814B1 (ko) * 2003-09-15 2006-01-11 삼성전자주식회사 화학기상증착장치
DE10345824A1 (de) * 2003-09-30 2005-05-04 Infineon Technologies Ag Anordnung zur Abscheidung von atomaren Schichten auf Substraten
US20050095859A1 (en) * 2003-11-03 2005-05-05 Applied Materials, Inc. Precursor delivery system with rate control
US7115508B2 (en) * 2004-04-02 2006-10-03 Applied-Materials, Inc. Oxide-like seasoning for dielectric low k films
US7112541B2 (en) * 2004-05-06 2006-09-26 Applied Materials, Inc. In-situ oxide capping after CVD low k deposition
JP4696561B2 (ja) * 2005-01-14 2011-06-08 東京エレクトロン株式会社 気化装置及び処理装置
JP2006222133A (ja) * 2005-02-08 2006-08-24 Hitachi Cable Ltd 原料ガス供給方法及びその装置
US7273823B2 (en) * 2005-06-03 2007-09-25 Applied Materials, Inc. Situ oxide cap layer development
JP2007031751A (ja) * 2005-07-25 2007-02-08 Renesas Technology Corp 薬液供給方法
US8755679B2 (en) 2006-04-05 2014-06-17 Horiba Stec, Co., Ltd. Liquid material vaporizer
JP5090341B2 (ja) * 2006-04-05 2012-12-05 株式会社堀場エステック 液体材料気化装置
US7932181B2 (en) * 2006-06-20 2011-04-26 Lam Research Corporation Edge gas injection for critical dimension uniformity improvement
JP4605790B2 (ja) * 2006-06-27 2011-01-05 株式会社フジキン 原料の気化供給装置及びこれに用いる圧力自動調整装置。
US7775508B2 (en) * 2006-10-31 2010-08-17 Applied Materials, Inc. Ampoule for liquid draw and vapor draw with a continuous level sensor
US7975718B2 (en) * 2007-04-16 2011-07-12 Applied Materials, Inc. In-situ monitor of injection valve
US7883745B2 (en) * 2007-07-30 2011-02-08 Micron Technology, Inc. Chemical vaporizer for material deposition systems and associated methods
DE102007038278B4 (de) * 2007-08-08 2013-09-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Stofftransport und Ereigniskontrolle in Systemen mit piezoelektrisch aktivierter Tröpfchenemission und Kombinationsmöglichkeiten von Trägermatrix und zu dosierendem Stoff
KR101501311B1 (ko) * 2007-12-19 2015-03-10 가부시키가이샤 호리바 에스텍 액체 재료 기화 장치
JP4934117B2 (ja) * 2008-09-03 2012-05-16 東京エレクトロン株式会社 ガス処理装置、ガス処理方法、および記憶媒体
KR101502415B1 (ko) * 2008-09-12 2015-03-13 엠 에스피 코포레이션 액체 전구물질 분무 방법 및 장치
US8146896B2 (en) 2008-10-31 2012-04-03 Applied Materials, Inc. Chemical precursor ampoule for vapor deposition processes
WO2010077606A1 (en) * 2008-12-08 2010-07-08 Rensselaer Polytechnic Institute Redox-initiated cationic polymerization using vapor-state reducing agents
US8151814B2 (en) * 2009-01-13 2012-04-10 Asm Japan K.K. Method for controlling flow and concentration of liquid precursor
KR101234409B1 (ko) * 2009-09-30 2013-02-18 시케이디 가부시키가이샤 액체 기화 시스템
JP5781546B2 (ja) * 2010-02-05 2015-09-24 エムエスピー コーポレーション 液体前躯体を気化するための微細液滴噴霧器
DE102010056021B3 (de) * 2010-12-23 2012-04-19 Centrotherm Sitec Gmbh Düsenanordnung und CVD-Reaktor
JP5810101B2 (ja) 2011-01-19 2015-11-11 Ckd株式会社 液体気化器
KR101892758B1 (ko) 2011-09-30 2018-10-04 시케이디 가부시키가이샤 액체 제어 장치
JP5989944B2 (ja) 2011-09-30 2016-09-07 Ckd株式会社 液体制御装置
JP5973178B2 (ja) * 2012-02-01 2016-08-23 Ckd株式会社 液体制御装置
US8783652B2 (en) * 2012-03-12 2014-07-22 Mps Corporation Liquid flow control for film deposition
KR101351313B1 (ko) * 2012-04-06 2014-01-14 주식회사 지에스티에스 기화 장치
KR101363354B1 (ko) * 2012-05-01 2014-02-17 주식회사 유니텍스 소스 컨테이너 및 기상 증착용 반응로
JP5919115B2 (ja) 2012-07-12 2016-05-18 Ckd株式会社 液体制御装置、及び液体制御装置に適用される網状体組立体
WO2017009997A1 (ja) 2015-07-16 2017-01-19 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び気化システム
JP6695701B2 (ja) * 2016-02-03 2020-05-20 株式会社Ｓｃｒｅｅｎホールディングス 処理液気化装置と基板処理装置
JP6748586B2 (ja) * 2016-07-11 2020-09-02 東京エレクトロン株式会社 ガス供給システム、基板処理システム及びガス供給方法
JP7281285B2 (ja) * 2019-01-28 2023-05-25 株式会社堀場エステック 濃度制御装置、及び、ゼロ点調整方法、濃度制御装置用プログラム

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0435088A1 (de) * 1989-12-12 1991-07-03 Applied Materials Japan, Inc. Verfahren und Vorrichtung zum chemischen Aufdampfen aus der Gasphase
EP0434966A1 (de) * 1989-12-22 1991-07-03 Corning Incorporated Verfahren zum Zuführen eines Reaktionspartners zu einer Abscheidungsvorrichtung für Glasruss.
EP0453107A1 (de) * 1990-04-12 1991-10-23 University Of Colorado Foundation, Inc. Chemische Abscheidemethoden unter Verwendung überkritischer Lösungen
EP0498622A2 (de) * 1991-02-05 1992-08-12 Applied Materials, Inc. Vorrichtung zum Verdampfen und Einspeisen einer Flüssigkeit
EP0533201A1 (de) * 1991-09-18 1993-03-24 Applied Materials Japan, Inc. Flüssigkeitsverdampfungsventil

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4496609A (en) * 1969-10-15 1985-01-29 Applied Materials, Inc. Chemical vapor deposition coating process employing radiant heat and a susceptor
US3930908A (en) 1974-09-30 1976-01-06 Rca Corporation Accurate control during vapor phase epitaxy
US4232063A (en) 1978-11-14 1980-11-04 Applied Materials, Inc. Chemical vapor deposition reactor and process
GB2092908A (en) 1981-02-18 1982-08-25 Nat Res Dev Method and apparatus for delivering a controlled flow rate of reactant to a vapour deposition process
JPS58125633A (ja) * 1982-01-18 1983-07-26 Nippon Telegr & Teleph Corp <Ntt> ガラス微粒子製造におけるガス供給方法
US4579080A (en) 1983-12-09 1986-04-01 Applied Materials, Inc. Induction heated reactor system for chemical vapor deposition
US4668365A (en) 1984-10-25 1987-05-26 Applied Materials, Inc. Apparatus and method for magnetron-enhanced plasma-assisted chemical vapor deposition
US4761269A (en) 1986-06-12 1988-08-02 Crystal Specialties, Inc. Apparatus for depositing material on a substrate
US5000113A (en) 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
JP2846891B2 (ja) 1988-06-03 1999-01-13 東京エレクトロン株式会社 処理装置
US5204314A (en) * 1990-07-06 1993-04-20 Advanced Technology Materials, Inc. Method for delivering an involatile reagent in vapor form to a CVD reactor
US5203925A (en) * 1991-06-20 1993-04-20 Matsushita Electric Industrial Co., Ltd. Apparatus for producing a thin film of tantalum oxide
EP0602595B1 (de) * 1992-12-15 1997-07-23 Applied Materials, Inc. Verdampfung von flüssigen Reaktionspartnern für CVD

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0435088A1 (de) * 1989-12-12 1991-07-03 Applied Materials Japan, Inc. Verfahren und Vorrichtung zum chemischen Aufdampfen aus der Gasphase
EP0434966A1 (de) * 1989-12-22 1991-07-03 Corning Incorporated Verfahren zum Zuführen eines Reaktionspartners zu einer Abscheidungsvorrichtung für Glasruss.
EP0453107A1 (de) * 1990-04-12 1991-10-23 University Of Colorado Foundation, Inc. Chemische Abscheidemethoden unter Verwendung überkritischer Lösungen
EP0498622A2 (de) * 1991-02-05 1992-08-12 Applied Materials, Inc. Vorrichtung zum Verdampfen und Einspeisen einer Flüssigkeit
EP0533201A1 (de) * 1991-09-18 1993-03-24 Applied Materials Japan, Inc. Flüssigkeitsverdampfungsventil

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5925189A (en) * 1995-12-06 1999-07-20 Applied Materials, Inc. Liquid phosphorous precursor delivery apparatus
US6616973B1 (en) 1995-12-06 2003-09-09 Applied Materials, Inc. Liquid phosphorous precursor delivery apparatus
EP0923985A1 (de) * 1997-12-15 1999-06-23 Martin Dr. Schmäh Vorrichtung zum Verdampfen von Flüssigkeiten und zum Herstellen von Gas/Dampfgemischen
EP1085106A1 (de) * 1999-09-14 2001-03-21 Stec Inc. Verfahren und Vorrichtung zum Verdampfen einer Flüssigkeit
US6752387B1 (en) 1999-09-14 2004-06-22 Stec Inc. Method and an apparatus for mixing and gasifying a reactant gas-liquid mixture
WO2005028702A2 (en) * 2003-09-15 2005-03-31 Intel Corporation Precursor delivery system
WO2005028702A3 (en) * 2003-09-15 2005-05-06 Intel Corp Precursor delivery system

Also Published As

Publication number Publication date
US20020014207A1 (en) 2002-02-07
US7055809B2 (en) 2006-06-06
DE69312436T2 (de) 1998-02-05
JP3607278B2 (ja) 2005-01-05
JP2004115920A (ja) 2004-04-15
JP3606892B2 (ja) 2005-01-05
US20030226505A1 (en) 2003-12-11
JPH06220641A (ja) 1994-08-09
US7055808B2 (en) 2006-06-06
US6224681B1 (en) 2001-05-01
DE69312436D1 (de) 1997-08-28
EP0602595B1 (de) 1997-07-23
US20040188866A1 (en) 2004-09-30
US6783118B2 (en) 2004-08-31

Similar Documents

Publication Publication Date Title
EP0602595B1 (de) Verdampfung von flüssigen Reaktionspartnern für CVD
US6132515A (en) Liquid precursor delivery system
EP0220552B1 (de) System und Verfahren zur Vakuumabscheidung
US8162298B2 (en) Method for vaporizing liquid material capable of vaporizing liquid material at low temperature and vaporizer using the same
EP2501839B1 (de) Gaszufuhr für strahlenverarbeitungssysteme
US5098741A (en) Method and system for delivering liquid reagents to processing vessels
EP0435088B1 (de) Verfahren und Vorrichtung zum chemischen Aufdampfen aus der Gasphase
JP3529731B2 (ja) 蒸気搬送システム
US5372754A (en) Liquid vaporizer/feeder
US4619844A (en) Method and apparatus for low pressure chemical vapor deposition
US5520001A (en) Vapor controller
JP2009527905A (ja) 直接液体注入デバイス
JP2001156055A (ja) 液体材料気化方法および装置
US20140124064A1 (en) Raw material vaporizing and supplying apparatus
WO2001067048A2 (en) Miniature pulsatile flow controller
KR20030024787A (ko) 기판 상의 박막 성장 방법
JP3200464B2 (ja) 液体材料気化供給装置
US5455014A (en) Liquid deposition source gas delivery system
US6006701A (en) Vaporizer in a liquid material vaporizing and feeding apparatus
EP0533201B1 (de) Flüssigkeitsverdampfungsventil
US8015989B2 (en) Method and apparatus for dampening pressure fluctuations in a fluid delivery system
JP3200457B2 (ja) 液体材料気化供給装置
KR20160099765A (ko) 원료 공급기 및 기판 처리 장치
JPH07227535A (ja) 液体材料気化供給装置
JP3280507B2 (ja) 液体材料気化供給装置

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): DE FR

17P Request for examination filed

Effective date: 19941221

17Q First examination report despatched

Effective date: 19951205

GRAG Despatch of communication of intention to grant

Free format text: ORIGINAL CODE: EPIDOS AGRA

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE FR

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Effective date: 19970723

REF Corresponds to:

Ref document number: 69312436

Country of ref document: DE

Date of ref document: 19970828

EN Fr: translation not filed
PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed
PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20121221

Year of fee payment: 20

REG Reference to a national code

Ref country code: DE

Ref legal event code: R071

Ref document number: 69312436

Country of ref document: DE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF EXPIRATION OF PROTECTION

Effective date: 20131217