DE69312339T2 - Optischer Halbleiterverstärker mit kurzer Schaltzeit - Google Patents

Optischer Halbleiterverstärker mit kurzer Schaltzeit

Info

Publication number
DE69312339T2
DE69312339T2 DE69312339T DE69312339T DE69312339T2 DE 69312339 T2 DE69312339 T2 DE 69312339T2 DE 69312339 T DE69312339 T DE 69312339T DE 69312339 T DE69312339 T DE 69312339T DE 69312339 T2 DE69312339 T2 DE 69312339T2
Authority
DE
Germany
Prior art keywords
optical semiconductor
switching time
semiconductor amplifier
short switching
short
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69312339T
Other languages
English (en)
Other versions
DE69312339D1 (de
Inventor
Benoit Deveaud-Pledran
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oclaro North America Inc
Original Assignee
France Telecom SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by France Telecom SA filed Critical France Telecom SA
Application granted granted Critical
Publication of DE69312339D1 publication Critical patent/DE69312339D1/de
Publication of DE69312339T2 publication Critical patent/DE69312339T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3418—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers using transitions from higher quantum levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3428—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer orientation perpendicular to the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
DE69312339T 1992-01-31 1993-01-28 Optischer Halbleiterverstärker mit kurzer Schaltzeit Expired - Fee Related DE69312339T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9201083A FR2687011B1 (fr) 1992-01-31 1992-01-31 Amplificateur optique a semiconducteur a faible temps de commutation.

Publications (2)

Publication Number Publication Date
DE69312339D1 DE69312339D1 (de) 1997-09-04
DE69312339T2 true DE69312339T2 (de) 1998-01-29

Family

ID=9426203

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69312339T Expired - Fee Related DE69312339T2 (de) 1992-01-31 1993-01-28 Optischer Halbleiterverstärker mit kurzer Schaltzeit

Country Status (5)

Country Link
US (1) US5283688A (de)
EP (1) EP0554178B1 (de)
JP (1) JP3215531B2 (de)
DE (1) DE69312339T2 (de)
FR (1) FR2687011B1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100198936B1 (ko) * 1996-11-20 1999-06-15 정선종 자체광전효과소자를 이용한 다단구조의 광 패킷 스위칭장치

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4745452A (en) * 1984-09-24 1988-05-17 Massachusetts Institute Of Technology Tunneling transfer devices
DE3850139T2 (de) * 1987-02-27 1994-10-06 Canon Kk Halbleiterlaser mit variabler Oszillationswellenlänge.
US4941025A (en) * 1987-12-30 1990-07-10 Bell Communications Research, Inc. Quantum well semiconductor structures for infrared and submillimeter light sources
US5033053A (en) * 1989-03-30 1991-07-16 Canon Kabushiki Kaisha Semiconductor laser device having plurality of layers for emitting lights of different wavelengths and method of driving the same
DE69104573T2 (de) * 1990-08-03 1995-04-20 Philips Nv Optischer Verstärker.
JPH04163967A (ja) * 1990-10-27 1992-06-09 Canon Inc 光デバイス

Also Published As

Publication number Publication date
JPH05275807A (ja) 1993-10-22
EP0554178A1 (de) 1993-08-04
FR2687011B1 (fr) 1994-07-08
JP3215531B2 (ja) 2001-10-09
FR2687011A1 (fr) 1993-08-06
DE69312339D1 (de) 1997-09-04
EP0554178B1 (de) 1997-07-23
US5283688A (en) 1994-02-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AVANEX CORP.(N.D.GES.D.STAATES DELAWARE), FREMONT,

8339 Ceased/non-payment of the annual fee