DE69312339D1 - Optischer Halbleiterverstärker mit kurzer Schaltzeit - Google Patents
Optischer Halbleiterverstärker mit kurzer SchaltzeitInfo
- Publication number
- DE69312339D1 DE69312339D1 DE69312339T DE69312339T DE69312339D1 DE 69312339 D1 DE69312339 D1 DE 69312339D1 DE 69312339 T DE69312339 T DE 69312339T DE 69312339 T DE69312339 T DE 69312339T DE 69312339 D1 DE69312339 D1 DE 69312339D1
- Authority
- DE
- Germany
- Prior art keywords
- optical semiconductor
- switching time
- semiconductor amplifier
- short switching
- short
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000003287 optical effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3418—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers using transitions from higher quantum levels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3428—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer orientation perpendicular to the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9201083A FR2687011B1 (fr) | 1992-01-31 | 1992-01-31 | Amplificateur optique a semiconducteur a faible temps de commutation. |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69312339D1 true DE69312339D1 (de) | 1997-09-04 |
DE69312339T2 DE69312339T2 (de) | 1998-01-29 |
Family
ID=9426203
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69312339T Expired - Fee Related DE69312339T2 (de) | 1992-01-31 | 1993-01-28 | Optischer Halbleiterverstärker mit kurzer Schaltzeit |
Country Status (5)
Country | Link |
---|---|
US (1) | US5283688A (de) |
EP (1) | EP0554178B1 (de) |
JP (1) | JP3215531B2 (de) |
DE (1) | DE69312339T2 (de) |
FR (1) | FR2687011B1 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100198936B1 (ko) * | 1996-11-20 | 1999-06-15 | 정선종 | 자체광전효과소자를 이용한 다단구조의 광 패킷 스위칭장치 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4745452A (en) * | 1984-09-24 | 1988-05-17 | Massachusetts Institute Of Technology | Tunneling transfer devices |
EP0280281B1 (de) * | 1987-02-27 | 1994-06-15 | Canon Kabushiki Kaisha | Halbleiterlaser mit variabler Oszillationswellenlänge |
US4941025A (en) * | 1987-12-30 | 1990-07-10 | Bell Communications Research, Inc. | Quantum well semiconductor structures for infrared and submillimeter light sources |
US5033053A (en) * | 1989-03-30 | 1991-07-16 | Canon Kabushiki Kaisha | Semiconductor laser device having plurality of layers for emitting lights of different wavelengths and method of driving the same |
EP0469681B1 (de) * | 1990-08-03 | 1994-10-12 | Koninklijke Philips Electronics N.V. | Optischer Verstärker |
JPH04163967A (ja) * | 1990-10-27 | 1992-06-09 | Canon Inc | 光デバイス |
-
1992
- 1992-01-31 FR FR9201083A patent/FR2687011B1/fr not_active Expired - Fee Related
-
1993
- 1993-01-26 US US08/009,138 patent/US5283688A/en not_active Expired - Lifetime
- 1993-01-28 EP EP93400210A patent/EP0554178B1/de not_active Expired - Lifetime
- 1993-01-28 DE DE69312339T patent/DE69312339T2/de not_active Expired - Fee Related
- 1993-01-29 JP JP01414293A patent/JP3215531B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69312339T2 (de) | 1998-01-29 |
JP3215531B2 (ja) | 2001-10-09 |
EP0554178A1 (de) | 1993-08-04 |
US5283688A (en) | 1994-02-01 |
EP0554178B1 (de) | 1997-07-23 |
FR2687011A1 (fr) | 1993-08-06 |
FR2687011B1 (fr) | 1994-07-08 |
JPH05275807A (ja) | 1993-10-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: AVANEX CORP.(N.D.GES.D.STAATES DELAWARE), FREMONT, |
|
8339 | Ceased/non-payment of the annual fee |