DE69232740D1 - Spannungsvariabler kondensator - Google Patents

Spannungsvariabler kondensator

Info

Publication number
DE69232740D1
DE69232740D1 DE69232740T DE69232740T DE69232740D1 DE 69232740 D1 DE69232740 D1 DE 69232740D1 DE 69232740 T DE69232740 T DE 69232740T DE 69232740 T DE69232740 T DE 69232740T DE 69232740 D1 DE69232740 D1 DE 69232740D1
Authority
DE
Germany
Prior art keywords
variable capacitor
voltage variable
voltage
capacitor
variable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69232740T
Other languages
English (en)
Other versions
DE69232740T2 (de
Inventor
D Cornett
S Ramakrishnan
H Shapiro
M Caldwell
Wei-Yean Howng
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of DE69232740D1 publication Critical patent/DE69232740D1/de
Publication of DE69232740T2 publication Critical patent/DE69232740T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69232740T 1991-10-15 1992-10-15 Spannungsvariabler kondensator Expired - Fee Related DE69232740T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/776,111 US5173835A (en) 1991-10-15 1991-10-15 Voltage variable capacitor
PCT/US1992/008781 WO1993008578A1 (en) 1991-10-15 1992-10-15 Voltage variable capacitor

Publications (2)

Publication Number Publication Date
DE69232740D1 true DE69232740D1 (de) 2002-09-26
DE69232740T2 DE69232740T2 (de) 2002-12-05

Family

ID=25106486

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69232740T Expired - Fee Related DE69232740T2 (de) 1991-10-15 1992-10-15 Spannungsvariabler kondensator

Country Status (7)

Country Link
US (1) US5173835A (de)
EP (1) EP0608376B1 (de)
JP (1) JP2853332B2 (de)
KR (2) KR940703070A (de)
DE (1) DE69232740T2 (de)
ES (1) ES2181679T3 (de)
WO (1) WO1993008578A1 (de)

Families Citing this family (110)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0568064B1 (de) * 1992-05-01 1999-07-14 Texas Instruments Incorporated Pb/Bi enthaltende Oxide von hohen Dielektrizitätskonstanten unter Verwendung von Perovskiten als Pufferschicht, die keine Pb/Bi enthalten
JPH0677402A (ja) * 1992-07-02 1994-03-18 Natl Semiconductor Corp <Ns> 半導体デバイス用誘電体構造及びその製造方法
US5587870A (en) * 1992-09-17 1996-12-24 Research Foundation Of State University Of New York Nanocrystalline layer thin film capacitors
US5390072A (en) * 1992-09-17 1995-02-14 Research Foundation Of State University Of New York Thin film capacitors
US5379008A (en) * 1993-03-03 1995-01-03 Motorola, Inc. Variable impedance circuit providing reduced distortion
US5933316A (en) * 1993-08-02 1999-08-03 Motorola Inc. Method for forming a titanate thin film on silicon, and device formed thereby
US5405790A (en) * 1993-11-23 1995-04-11 Motorola, Inc. Method of forming a semiconductor structure having MOS, bipolar, and varactor devices
US5495208A (en) * 1994-04-04 1996-02-27 Motorola, Inc. Wide band tunable and modulatable reference oscillator
US5615096A (en) * 1994-06-06 1997-03-25 Motorola, Inc. Direct current power supply conditioning circuit
US5600187A (en) * 1994-06-27 1997-02-04 General Electric Company Electronically controllable capacitors using power MOSFET's
US5493715A (en) * 1994-08-01 1996-02-20 Motorola, Inc. Multi-range voltage controlled resonant circuit
US5602052A (en) * 1995-04-24 1997-02-11 Harris Corporation Method of forming dummy island capacitor
US5673001A (en) * 1995-06-07 1997-09-30 Motorola, Inc. Method and apparatus for amplifying a signal
US5888585A (en) * 1996-02-08 1999-03-30 Symetrix Corporation Process for making an integrated circuit with high dielectric constant barium-strontium-niobium oxide
JP3161333B2 (ja) * 1996-07-22 2001-04-25 日本電気株式会社 半導体装置およびその製造方法
AU5150298A (en) * 1996-10-25 1998-05-29 Superconducting Core Technologies, Inc. Tunable dielectric flip chip varactors
US5744385A (en) * 1997-03-21 1998-04-28 Plato Labs, Inc. Compensation technique for parasitic capacitance
US7115461B2 (en) * 1997-07-24 2006-10-03 Texas Instruments Incorporated High permittivity silicate gate dielectric
US6013553A (en) 1997-07-24 2000-01-11 Texas Instruments Incorporated Zirconium and/or hafnium oxynitride gate dielectric
US6841439B1 (en) * 1997-07-24 2005-01-11 Texas Instruments Incorporated High permittivity silicate gate dielectric
US5959515A (en) * 1997-08-11 1999-09-28 Motorola, Inc. High Q integrated resonator structure
US5965912A (en) * 1997-09-03 1999-10-12 Motorola, Inc. Variable capacitor and method for fabricating the same
SE515783C2 (sv) * 1997-09-11 2001-10-08 Ericsson Telefon Ab L M Elektriska anordningar jämte förfarande för deras tillverkning
WO1999023705A1 (de) * 1997-10-30 1999-05-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Passives hf-element und verfahren zum betreiben, zum herstellen und zum bestimmen von charakteristischen eigenschaften desselben
US6268779B1 (en) 1999-03-19 2001-07-31 Telefonaktiebolaget Lm Ericsson (Publ) Integrated oscillators and tuning circuits
US6057203A (en) * 1998-06-19 2000-05-02 Programmable Silicon Solutions Integrated circuit capacitor
US6727535B1 (en) * 1998-11-09 2004-04-27 Paratek Microwave, Inc. Ferroelectric varactor with built-in DC blocks
US6507476B1 (en) * 1999-11-01 2003-01-14 International Business Machines Corporation Tuneable ferroelectric decoupling capacitor
US20030058022A1 (en) * 1999-12-14 2003-03-27 Rajendran Nair Device and method for controlling voltage variation
US6828638B2 (en) 1999-12-22 2004-12-07 Intel Corporation Decoupling capacitors for thin gate oxides
US6278158B1 (en) * 1999-12-29 2001-08-21 Motorola, Inc. Voltage variable capacitor with improved C-V linearity
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
SE516361C2 (en) * 2000-05-16 2002-01-08 Ericsson Telefon Ab L M LC tank formed on a low resistivity substrate for use in resonators used in microwave filters, oscillators etc., has adjacent strips leading current in opposite directions and arranged so that substrate currents balance out
US6504443B1 (en) 2000-05-17 2003-01-07 Nec America, Inc., Common anode varactor tuned LC circuit
JP2004506985A (ja) * 2000-08-18 2004-03-04 シーメンス　アクチエンゲゼルシヤフト 封入された有機電子構成素子、その製造方法および使用
JP2004507096A (ja) * 2000-08-18 2004-03-04 シーメンス　アクチエンゲゼルシヤフト 有機電界効果トランジスタ（ｏｆｅｔ），該有機電界効果トランジスタの製造方法、前記有機電界効果トランジスタから形成される集積回路、及び該集積回路の使用
DE10044842A1 (de) * 2000-09-11 2002-04-04 Siemens Ag Organischer Gleichrichter, Schaltung, RFID-Tag und Verwendung eines organischen Gleichrichters
WO2002025750A1 (de) * 2000-09-22 2002-03-28 Siemens Aktiengesellschaft Elektrode und/oder leiterbahn für organische bauelemente und herstellungsverfahren dazu
US6521939B1 (en) 2000-09-29 2003-02-18 Chartered Semiconductor Manufacturing Ltd. High performance integrated varactor on silicon
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
DE10061286C1 (de) * 2000-12-08 2002-04-04 Hollingsworth Gmbh Vorrichtung zum Aufziehen einer Kardiergarnitur
DE10061299A1 (de) * 2000-12-08 2002-06-27 Siemens Ag Vorrichtung zur Feststellung und/oder Weiterleitung zumindest eines Umwelteinflusses, Herstellungsverfahren und Verwendung dazu
DE10061297C2 (de) 2000-12-08 2003-05-28 Siemens Ag Verfahren zur Sturkturierung eines OFETs
US6686817B2 (en) 2000-12-12 2004-02-03 Paratek Microwave, Inc. Electronic tunable filters with dielectric varactors
WO2002050919A1 (fr) * 2000-12-21 2002-06-27 Kolesnikov, Vladimir Ilich Dispositif semi-conducteur
DE10105914C1 (de) * 2001-02-09 2002-10-10 Siemens Ag Organischer Feldeffekt-Transistor mit fotostrukturiertem Gate-Dielektrikum und ein Verfahren zu dessen Erzeugung
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
JP2005509200A (ja) * 2001-03-26 2005-04-07 シーメンス　アクチエンゲゼルシヤフト 少なくとも２つの有機電子構成エレメントを有する装置、および該装置のための製造方法
DE10126860C2 (de) * 2001-06-01 2003-05-28 Siemens Ag Organischer Feldeffekt-Transistor, Verfahren zu seiner Herstellung und Verwendung zum Aufbau integrierter Schaltungen
DE10126859A1 (de) * 2001-06-01 2002-12-12 Siemens Ag Verfahren zur Erzeugung von leitfähigen Strukturen mittels Drucktechnik sowie daraus hergestellte aktive Bauelemente für integrierte Schaltungen
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
DE10151036A1 (de) 2001-10-16 2003-05-08 Siemens Ag Isolator für ein organisches Elektronikbauteil
US20030071327A1 (en) * 2001-10-17 2003-04-17 Motorola, Inc. Method and apparatus utilizing monocrystalline insulator
DE10151440C1 (de) * 2001-10-18 2003-02-06 Siemens Ag Organisches Elektronikbauteil, Verfahren zu seiner Herstellung und seine Verwendung
US6541814B1 (en) 2001-11-06 2003-04-01 Pericom Semiconductor Corp. MOS variable capacitor with controlled dC/dV and voltage drop across W of gate
US6667539B2 (en) 2001-11-08 2003-12-23 International Business Machines Corporation Method to increase the tuning voltage range of MOS varactors
JP3978019B2 (ja) * 2001-11-19 2007-09-19 矢崎化工株式会社 樹脂被覆鋼管における鋼管と被覆樹脂の分離回収方法、及び分離回収設備
DE10160732A1 (de) * 2001-12-11 2003-06-26 Siemens Ag Organischer Feld-Effekt-Transistor mit verschobener Schwellwertspannung und Verwendung dazu
US20050113138A1 (en) * 2002-03-18 2005-05-26 Greg Mendolia RF ID tag reader utlizing a scanning antenna system and method
DE10212640B4 (de) * 2002-03-21 2004-02-05 Siemens Ag Logische Bauteile aus organischen Feldeffekttransistoren
DE10212639A1 (de) * 2002-03-21 2003-10-16 Siemens Ag Vorrichtung und Verfahren zur Laserstrukturierung von Funktionspolymeren und Verwendungen
DE10226370B4 (de) * 2002-06-13 2008-12-11 Polyic Gmbh & Co. Kg Substrat für ein elektronisches Bauteil, Verwendung des Substrates, Verfahren zur Erhöhung der Ladungsträgermobilität und Organischer Feld-Effekt Transistor (OFET)
EP1525630A2 (de) * 2002-07-29 2005-04-27 Siemens Aktiengesellschaft Elektronisches bauteil mit vorwiegend organischen funktionsmaterialien und herstellungsverfahren dazu
DE50309888D1 (de) * 2002-08-08 2008-07-03 Polyic Gmbh & Co Kg Elektronisches gerät
WO2004021256A1 (de) 2002-08-23 2004-03-11 Siemens Aktiengesellschaft Organisches bauelement zum überspannungsschutz und dazugehörige schaltung
US20060118778A1 (en) * 2002-11-05 2006-06-08 Wolfgang Clemens Organic electronic component with high-resolution structuring and method for the production thereof
DE10253154A1 (de) * 2002-11-14 2004-05-27 Siemens Ag Messgerät zur Bestimmung eines Analyten in einer Flüssigkeitsprobe
ATE540436T1 (de) * 2002-11-19 2012-01-15 Polyic Gmbh & Co Kg Organisches elektronisches bauelement mit gleichem organischem material für zumindest zwei funktionsschichten
WO2004047144A2 (de) * 2002-11-19 2004-06-03 Polyic Gmbh & Co.Kg Organisches elektronisches bauelement mit stukturierter halbleitender funktionsschicht und herstellungsverfahren dazu
DE10300521A1 (de) * 2003-01-09 2004-07-22 Siemens Ag Organoresistiver Speicher
DE502004003677D1 (de) * 2003-01-21 2007-06-14 Polyic Gmbh & Co Kg Organisches elektronikbauteil und verfahren zur herstellung organischer elektronik
DE10302149A1 (de) * 2003-01-21 2005-08-25 Siemens Ag Verwendung leitfähiger Carbon-black/Graphit-Mischungen für die Herstellung von low-cost Elektronik
KR100528464B1 (ko) * 2003-02-06 2005-11-15 삼성전자주식회사 스마트카드의 보안장치
US7656036B2 (en) 2003-02-14 2010-02-02 Nec Corporation Line component and semiconductor circuit using line component
JP5121114B2 (ja) * 2003-05-29 2013-01-16 三洋電機株式会社 画素回路および表示装置
DE10330062A1 (de) * 2003-07-03 2005-01-27 Siemens Ag Verfahren und Vorrichtung zur Strukturierung von organischen Schichten
DE10330064B3 (de) * 2003-07-03 2004-12-09 Siemens Ag Logikgatter mit potentialfreier Gate-Elektrode für organische integrierte Schaltungen
DE10338277A1 (de) * 2003-08-20 2005-03-17 Siemens Ag Organischer Kondensator mit spannungsgesteuerter Kapazität
DE10339036A1 (de) 2003-08-25 2005-03-31 Siemens Ag Organisches elektronisches Bauteil mit hochaufgelöster Strukturierung und Herstellungsverfahren dazu
DE10340643B4 (de) * 2003-09-03 2009-04-16 Polyic Gmbh & Co. Kg Druckverfahren zur Herstellung einer Doppelschicht für Polymerelektronik-Schaltungen, sowie dadurch hergestelltes elektronisches Bauelement mit Doppelschicht
DE10340644B4 (de) * 2003-09-03 2010-10-07 Polyic Gmbh & Co. Kg Mechanische Steuerelemente für organische Polymerelektronik
DE102004002024A1 (de) * 2004-01-14 2005-08-11 Siemens Ag Organischer Transistor mit selbstjustierender Gate-Elektrode und Verfahren zu dessen Herstellung
DE102004040831A1 (de) 2004-08-23 2006-03-09 Polyic Gmbh & Co. Kg Funketikettfähige Umverpackung
DE102004059464A1 (de) 2004-12-10 2006-06-29 Polyic Gmbh & Co. Kg Elektronikbauteil mit Modulator
DE102004059465A1 (de) 2004-12-10 2006-06-14 Polyic Gmbh & Co. Kg Erkennungssystem
DE102004063435A1 (de) 2004-12-23 2006-07-27 Polyic Gmbh & Co. Kg Organischer Gleichrichter
DE102005009819A1 (de) 2005-03-01 2006-09-07 Polyic Gmbh & Co. Kg Elektronikbaugruppe
DE102005009820A1 (de) 2005-03-01 2006-09-07 Polyic Gmbh & Co. Kg Elektronikbaugruppe mit organischen Logik-Schaltelementen
DE102005017655B4 (de) 2005-04-15 2008-12-11 Polyic Gmbh & Co. Kg Mehrschichtiger Verbundkörper mit elektronischer Funktion
US7936344B2 (en) * 2005-05-03 2011-05-03 Hannstar Display Corporation Pixel structure with improved viewing angle
CN101228630B (zh) 2005-05-30 2011-10-05 株式会社半导体能源研究所 半导体器件
DE102005031448A1 (de) 2005-07-04 2007-01-11 Polyic Gmbh & Co. Kg Aktivierbare optische Schicht
US7276910B2 (en) * 2005-07-19 2007-10-02 Seektech, Inc. Compact self-tuned electrical resonator for buried object locator applications
DE102005035589A1 (de) 2005-07-29 2007-02-01 Polyic Gmbh & Co. Kg Verfahren zur Herstellung eines elektronischen Bauelements
DE102005044306A1 (de) 2005-09-16 2007-03-22 Polyic Gmbh & Co. Kg Elektronische Schaltung und Verfahren zur Herstellung einer solchen
EP1909384A3 (de) * 2006-10-06 2015-11-25 Semiconductor Energy Laboratory Co., Ltd. Gleichrichterschaltung mit variabler Kapazität, Halbleiter mit dieser Schaltung und Ansteuerungsverfahren dafür
JP5325415B2 (ja) * 2006-12-18 2013-10-23 株式会社半導体エネルギー研究所 半導体装置
TW200849759A (en) * 2007-06-08 2008-12-16 Univ Chang Gung Cascade EMP protection circuit
US20090088105A1 (en) * 2007-09-28 2009-04-02 Ahmadreza Rofougaran Method and system for utilizing a programmable coplanar waveguide or microstrip bandpass filter for undersampling in a receiver
TWI363914B (en) 2007-11-21 2012-05-11 Hannstar Display Corp Liquid crystal display
TWI445241B (zh) * 2008-03-21 2014-07-11 Univ Chang Gung Electromagnetic pulse protection circuit with filtering function
JP5185845B2 (ja) * 2009-01-27 2013-04-17 株式会社神戸製鋼所 可変容量素子
KR101067496B1 (ko) * 2009-04-08 2011-09-27 주식회사 에스세라 전압 가변부 및 이를 구비하는 표면 실장 소자
US9923101B2 (en) 2012-09-13 2018-03-20 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure
US10319426B2 (en) * 2017-05-09 2019-06-11 Micron Technology, Inc. Semiconductor structures, memory cells and devices comprising ferroelectric materials, systems including same, and related methods

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3202891A (en) * 1960-11-30 1965-08-24 Gen Telephone & Elect Voltage variable capacitor with strontium titanate dielectric
US3512052A (en) * 1968-01-11 1970-05-12 Gen Motors Corp Metal-insulator-semiconductor voltage variable capacitor with controlled resistivity dielectric
US3648340A (en) * 1969-08-11 1972-03-14 Gen Motors Corp Hybrid solid-state voltage-variable tuning capacitor
US3634738A (en) * 1970-10-06 1972-01-11 Kev Electronics Corp Diode having a voltage variable capacitance characteristic and method of making same
US3809971A (en) * 1972-03-17 1974-05-07 Norton Co Microfarad range varactor
US3890635A (en) * 1973-12-26 1975-06-17 Gen Electric Variable capacitance semiconductor devices
US4005466A (en) * 1975-05-07 1977-01-25 Rca Corporation Planar voltage variable tuning capacitors
JPS5745968A (en) * 1980-08-29 1982-03-16 Ibm Capacitor with double dielectric unit
JPS5873146A (ja) * 1981-10-28 1983-05-02 Hitachi Ltd 混成集積回路とその製造方法
US4782350A (en) * 1987-10-28 1988-11-01 Xerox Corporation Amorphous silicon varactors as rf amplitude modulators and their application to acoustic ink printers
US5192871A (en) * 1991-10-15 1993-03-09 Motorola, Inc. Voltage variable capacitor having amorphous dielectric film

Also Published As

Publication number Publication date
EP0608376A1 (de) 1994-08-03
US5173835A (en) 1992-12-22
EP0608376B1 (de) 2002-08-21
DE69232740T2 (de) 2002-12-05
JPH07500457A (ja) 1995-01-12
ES2181679T3 (es) 2003-03-01
WO1993008578A1 (en) 1993-04-29
KR940703070A (ko) 1994-09-17
JP2853332B2 (ja) 1999-02-03
KR0134980B1 (ko) 1998-05-15
EP0608376A4 (de) 1994-12-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee