KR940703070A - 전압 가변 커패시터 - Google Patents

전압 가변 커패시터

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Publication number
KR940703070A
KR940703070A KR1019940701230A KR19940701230A KR940703070A KR 940703070 A KR940703070 A KR 940703070A KR 1019940701230 A KR1019940701230 A KR 1019940701230A KR 19940701230 A KR19940701230 A KR 19940701230A KR 940703070 A KR940703070 A KR 940703070A
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KR
South Korea
Prior art keywords
layer
insulating layer
semiconductor
high resistivity
variable capacitor
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KR1019940701230A
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English (en)
Inventor
디 코넷 케네스.
에스. 라마크리스난 이.
에이취. 샤피로 게리.
엠. 칼드웰 레이몬드
홍웨이연
Original Assignee
다니엘 케이. 니콜스
모토로라 인코포레이티드(Motorola, Inc.)
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Application filed by 다니엘 케이. 니콜스, 모토로라 인코포레이티드(Motorola, Inc.) filed Critical 다니엘 케이. 니콜스
Publication of KR940703070A publication Critical patent/KR940703070A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

전압 가변 커패시터(10)는 기판의 상부에 저항률이 높은 반도체 재료의 층을 갖는 베이스 기판인 실리콘 웨이퍼를 갖는다. 지르코늄 티탄산염과 같은 반도체(12)의 유전 상수보다 큰 유전상수를 갖는 금속 산화물의 절연층(16)은 저항률이 높은 층의 상부에 형성되며, 금속 전극(18)은 절연층(16)상에 형성된다. 전극이 작동될때, 소모층(20)은 저항률이 높은 층에 형성된다. 전극에 가해진 전압을 변화시키므로써, 장치의 정전용량이 변화된다.

Description

전압 가변 커패시터
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 전압가변 커패시터의 단면도,
제2a도 및 제2b도는 본 발명에 따른 장치를 위한 1MHz(제2b도)와 20KHz(제2a도)에서의 용량 대 전압의 그래프,
제3도는 본 발명에 따른 집적 회로에서 전압 가변 커패시터의 사시도.

Claims (16)

  1. 전압 가변 커패시터에 있어서, 반도체보다 저항률이 높은 반도체 재료의 층을 갖는 반도체와, 저항률이 높은 층에 형성된 소모층과, 저항률이 높은 층에 형성되고, 반도체의 유전상수보다 큰 유전상수를 갖는 금속산화물인 절연층과, 유전층상에 형성된 도전성 전극을 포함하는 것을 특징으로 하는 전압가변 커패시터.
  2. 전압 가변 커패시터에 있어서, 반도체보다 저항률이 높은 반도체 재료의 층을 갖는 반도체와, 저항률이 높은 층에 형성된 소모층과, 저항률이 높은 층에 형성된 절연층과, 절연층상에 형성된 도전성 전극을 포함하며, 상기 절연층은 금속 산화 화합물이며, 상기 금속은 바륨, 납, 리튬, 몰리브덴, 네오디뮴, 니오븀, 스트론튬, 탄탈, 티타늄, 텅스텐, 바나듐, 및 지르코늄으로 구성된 집단에서 선택된 적어도 제1 및 제2성분을 포함하며, 상기 절연층은 반도체의 유전상수보다 큰 유전상수를 갖는 것을 특징으로 하는 전압가변 커패시터.
  3. 전압 가변 커패시터에 있어서, 반도체보다 저항률이 높은 반도체 재료의 층을 갖는 반도체와, 저항률이 높은 층에 형성된 소모층과, 저항률이 높은 층에 형성된 절연층과, 절연층상에 형성된 도전성 전극을 포함하며, 상기 절연층은 바륨, 납, 리튬, 몰리브덴, 네오디뮴, 니오븀, 스트론튬, 탄탈, 티타늄, 텅스텐, 바나듐, 및 지르코늄 등의 산화물로 구성된 집단에서 선택된 산화물이며, 상기 절연층은 반도체의 유전상수보다 큰 유전상수를 갖는 것을 특징으로 하는 전압가변 커패시터.
  4. 제1항에 있어서, 절연층은 지르코늄 티탄산염을 포함하는 것을 특징으로 하는 전압가변 커패시터.
  5. 제1항에 있어서, 절연층은 16 보다 큰 유전 상수를 갖는 것을 특징으로 하는 전압가변 커패시터.
  6. 제1항에 있어서, 절연층은 저손실의 비강유전성 절연체를 포함하는 것을 특징으로 하는 전압가변 커패시터.
  7. 제1항에 있어서, 절연층은 유전상수는 저항률이 높은 반도체 재료의 유전상수보다 큰 것을 특징으로 하는 전압가변 커패시터.
  8. 전압 가변 커패시터에 있어서, 반도체보다 저항률이 높은 반도체 재료의 층을 갖는 반도체와, 저항률이 높은 층에 형성된 소모층과, 저항률이 높은 층에 형성되고, 반도체의 유전상수보다 큰 유전상수를 갖는 금속산화물인 절연층과, 절연층상에 형성된 도전성 전극을 포함하는 것을 특징으로 하는 전압가변 커패시터.
  9. 전압가변 박막 커패시터에 있어서, 저항률이 높은 반도체 재료층을 갖는 반도체와, 저항률이 높은 층에 형성되고, 지르코늄 티탄산염의 박막과 지르코늄 티탄산염상에 형성된 금속전극을 포함하는 절연층과, 커패시터의 전기적 작동에 따라 저항률이 높은 층에 형성된 소모층을 포함하는 것을 특징으로 하는 전압 가변 박막 커패시터.
  10. 유전 상수가 40이거나 40보다 큰 저손실의 비강유전성 재료를 포함하는 것을 특징으로 하는 전압 가변 커패시터용 절연층.
  11. 전압 가변 커패시터용의 절연층에 있어서, 유전 상수가 40이거나 40보다 큰 저손실의 비강유전성 재료를 포함하며, 상기 절연층은 금속 산화물이며, 상기 금속은 바륨, 납, 리튬, 몰리브덴, 네오디뮴, 니오븀, 스트론튬, 탄탈, 티타늄, 텅스텐, 바나듐, 및 지르코늄으로 구성된 집단에서 선택된 적어도 제1 및 제2성분을 포함하는 것을 특징으로 하는 전압 가변 커패시터용 절연층.
  12. 전압 가변 커패시터용의 절연층에 있어서, 유전상수가 40이거나 40보다 큰 저손실의 비강유전성 재료를 포함하며, 상기 절연층은 바륨, 납, 리튬, 몰리브덴, 네오디뮴, 니오븀, 스트론튬, 탄탈, 티타늄, 텅스텐, 바나듐, 및 지르코늄 등의 산화물로 구성된 집단에서 선택된 산화물인 것을 특징으로 하는 전압 가변 커패시터용의 절연층.
  13. 제10항에 있어서, 상기 재료는 지르코늄 티탄산염을 포함하는 것을 특징으로 하는 전압가변 커패시터용 절연층.
  14. 전압 가변 커패시터의 제조 방법에 있어서, 저항률이 높은 반도체 재료층을 동일한 도전형태를 갖는 반도체상에 침착하는 단계와, 반도체의 유전상수보다 큰 유전상수를 갖는 금속 산화물과 금속 티탄산염 또는 금속 니오브산염의 층을 저항률이 높은 층의 표면에 침착하는 단계와, 절연재료상에 전극을 형성하는 단계와, 저항률이 높은 층에 소모층을 형성하기 위하여 전극에 전압을 가하는 단계를 포함하는 것을 특징으로 하는 전압가변 커패시터의 제조 방법.
  15. 제14항에 있어서, 스퍼터링, 증발, 화학증착, 이온 비임, 플라즈마, 졸-겔, 또는 용액 화학처리에 의해 코팅을 실시하는 코팅단계를 포함하는 것을 특징으로 하는 전압 가변 커패시터의 제조 방법.
  16. 적어도 하나의 전압가변 커패시터를 구비한 공진기를 갖는 라디오에 있어서, 상기 전압가변 커패시터는, 저항률이 높은 반도체성 재료의 층을 갖는 반도체 기판과, 저항률이 높은 층에 형성된 소모층과, 저항률이 높은 층에 형성되고, 지르코늄 티탄산염 박막을 포함하는 절연층과, 소모층의 바로 위의 지역에서 지르코늄 티탄산염상에 형성된 전극을 포함하는 것을 특징으로 하는 공진기를 갖는 라디오.
    ※참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940701230A 1991-10-15 1992-10-15 전압 가변 커패시터 KR940703070A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US776,111 1991-10-15
US07/776,111 US5173835A (en) 1991-10-15 1991-10-15 Voltage variable capacitor
PCT/US1992/008781 WO1993008578A1 (en) 1991-10-15 1992-10-15 Voltage variable capacitor

Publications (1)

Publication Number Publication Date
KR940703070A true KR940703070A (ko) 1994-09-17

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KR1019940701230A KR0134980B1 (ko) 1991-10-15 1992-10-15 전압가변 커패시터(Voltage varible capacitor)
KR1019940701230A KR940703070A (ko) 1991-10-15 1992-10-15 전압 가변 커패시터

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Application Number Title Priority Date Filing Date
KR1019940701230A KR0134980B1 (ko) 1991-10-15 1992-10-15 전압가변 커패시터(Voltage varible capacitor)

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Country Link
US (1) US5173835A (ko)
EP (1) EP0608376B1 (ko)
JP (1) JP2853332B2 (ko)
KR (2) KR0134980B1 (ko)
DE (1) DE69232740T2 (ko)
ES (1) ES2181679T3 (ko)
WO (1) WO1993008578A1 (ko)

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EP0608376B1 (en) 2002-08-21
JPH07500457A (ja) 1995-01-12
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US5173835A (en) 1992-12-22

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