DK0562101T3 - Spændingsvariabel kondensator med amorf dielektrisk film - Google Patents

Spændingsvariabel kondensator med amorf dielektrisk film

Info

Publication number
DK0562101T3
DK0562101T3 DK92922713T DK92922713T DK0562101T3 DK 0562101 T3 DK0562101 T3 DK 0562101T3 DK 92922713 T DK92922713 T DK 92922713T DK 92922713 T DK92922713 T DK 92922713T DK 0562101 T3 DK0562101 T3 DK 0562101T3
Authority
DK
Denmark
Prior art keywords
dielectric film
variable capacitor
voltage variable
amorphous dielectric
amorphous
Prior art date
Application number
DK92922713T
Other languages
English (en)
Inventor
E S Ramakrishnan
Kenneth D Cornett
Wei-Yean Howng
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of DK0562101T3 publication Critical patent/DK0562101T3/da

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
DK92922713T 1991-10-15 1992-10-15 Spændingsvariabel kondensator med amorf dielektrisk film DK0562101T3 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/776,034 US5192871A (en) 1991-10-15 1991-10-15 Voltage variable capacitor having amorphous dielectric film
PCT/US1992/008809 WO1993008610A1 (en) 1991-10-15 1992-10-15 Voltage variable capacitor having amorphous dielectric film

Publications (1)

Publication Number Publication Date
DK0562101T3 true DK0562101T3 (da) 2000-08-07

Family

ID=25106274

Family Applications (1)

Application Number Title Priority Date Filing Date
DK92922713T DK0562101T3 (da) 1991-10-15 1992-10-15 Spændingsvariabel kondensator med amorf dielektrisk film

Country Status (7)

Country Link
US (1) US5192871A (da)
EP (1) EP0562101B1 (da)
JP (1) JP2780489B2 (da)
KR (1) KR0164874B1 (da)
DE (1) DE69230995T2 (da)
DK (1) DK0562101T3 (da)
WO (1) WO1993008610A1 (da)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5173835A (en) * 1991-10-15 1992-12-22 Motorola, Inc. Voltage variable capacitor
US5587870A (en) * 1992-09-17 1996-12-24 Research Foundation Of State University Of New York Nanocrystalline layer thin film capacitors
US5390072A (en) * 1992-09-17 1995-02-14 Research Foundation Of State University Of New York Thin film capacitors
US5933316A (en) * 1993-08-02 1999-08-03 Motorola Inc. Method for forming a titanate thin film on silicon, and device formed thereby
US5623724A (en) * 1994-08-09 1997-04-22 Northrop Grumman Corporation High power capacitor
KR0180779B1 (ko) * 1995-02-27 1999-03-20 김주용 반도체소자의 캐패시터 제조방법
KR100360468B1 (ko) * 1995-03-20 2003-01-24 삼성전자 주식회사 강유전성박막제조방법및이를적용한캐패시터및그제조방법
JPH0931645A (ja) * 1995-07-21 1997-02-04 Sharp Corp 誘電体薄膜素子の製造方法
US5771148A (en) * 1995-11-17 1998-06-23 Motorola, Inc. Intercalation-based voltage variable capacitor
US5747698A (en) * 1996-04-24 1998-05-05 Simmonds Precision Products Inc. Capacitive z-axis strain gauge
WO1998000881A1 (en) * 1996-06-28 1998-01-08 Superconducting Core Technologies, Inc. Near resonant cavity tuning devices
US6038134A (en) * 1996-08-26 2000-03-14 Johanson Dielectrics, Inc. Modular capacitor/inductor structure
US5910880A (en) 1997-08-20 1999-06-08 Micron Technology, Inc. Semiconductor circuit components and capacitors
US5965912A (en) * 1997-09-03 1999-10-12 Motorola, Inc. Variable capacitor and method for fabricating the same
US6191443B1 (en) 1998-02-28 2001-02-20 Micron Technology, Inc. Capacitors, methods of forming capacitors, and DRAM memory cells
US6730559B2 (en) 1998-04-10 2004-05-04 Micron Technology, Inc. Capacitors and methods of forming capacitors
KR100494322B1 (ko) * 1999-12-22 2005-06-10 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
US6278158B1 (en) * 1999-12-29 2001-08-21 Motorola, Inc. Voltage variable capacitor with improved C-V linearity
US7005695B1 (en) * 2000-02-23 2006-02-28 Micron Technology, Inc. Integrated circuitry including a capacitor with an amorphous and a crystalline high K capacitor dielectric region
US6953730B2 (en) * 2001-12-20 2005-10-11 Micron Technology, Inc. Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics
US6649281B2 (en) * 2002-03-27 2003-11-18 Raytheon Company Voltage variable metal/dielectric composite structure
US20040121566A1 (en) * 2002-12-23 2004-06-24 Infineon Technologies North America Corp Method to produce low leakage high K materials in thin film form
US7183186B2 (en) * 2003-04-22 2007-02-27 Micro Technology, Inc. Atomic layer deposited ZrTiO4 films
JP4563655B2 (ja) * 2003-04-23 2010-10-13 株式会社日立製作所 半導体装置及びその製造方法
US7588988B2 (en) 2004-08-31 2009-09-15 Micron Technology, Inc. Method of forming apparatus having oxide films formed using atomic layer deposition
US7494939B2 (en) 2004-08-31 2009-02-24 Micron Technology, Inc. Methods for forming a lanthanum-metal oxide dielectric layer
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7972974B2 (en) * 2006-01-10 2011-07-05 Micron Technology, Inc. Gallium lanthanide oxide films
JP4953877B2 (ja) * 2006-08-30 2012-06-13 京セラ株式会社 コンデンサ及び高周波部品
CN101542728A (zh) * 2006-11-22 2009-09-23 日本电气株式会社 非易失性存储器件
JP5583875B1 (ja) * 2012-11-14 2014-09-03 日本碍子株式会社 複合基板及びその製法

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Publication number Priority date Publication date Assignee Title
US3579278A (en) * 1967-10-12 1971-05-18 Varian Associates Surface barrier diode having a hypersensitive {72 {30 {0 region forming a hypersensitive voltage variable capacitor
US3624895A (en) * 1968-01-11 1971-12-07 Gen Motors Corp Metal-insulator-semiconductor voltage variable capacitor with controlled resistivity dielectric
US3604990A (en) * 1970-04-01 1971-09-14 Gen Electric Smoothly changing voltage-variable capacitor having an extendible pn junction region
US3611070A (en) * 1970-06-15 1971-10-05 Gen Electric Voltage-variable capacitor with controllably extendible pn junction region
US3634738A (en) * 1970-10-06 1972-01-11 Kev Electronics Corp Diode having a voltage variable capacitance characteristic and method of making same
US3860945A (en) * 1973-03-29 1975-01-14 Rca Corp High frequency voltage-variable capacitor
JPH0754846B2 (ja) * 1985-11-29 1995-06-07 株式会社日立製作所 キャパシタの製造方法
JPS62286325A (ja) * 1986-06-05 1987-12-12 Clarion Co Ltd 無線通信装置
US4973922A (en) * 1987-11-27 1990-11-27 At&T Bell Laboratories Voltage controlled variable capacitor and oscillator using it
JPH01222469A (ja) * 1988-03-01 1989-09-05 Fujitsu Ltd 半導体記憶装置とその製造方法
JPH01280347A (ja) * 1988-05-06 1989-11-10 Nec Corp 半導体装置
JPH0236559A (ja) * 1988-07-26 1990-02-06 Nec Corp 半導体装置及びその製造方法
JPH0736438B2 (ja) * 1988-08-25 1995-04-19 日本電気株式会社 半導体装置
JP3195785B2 (ja) * 1989-07-17 2001-08-06 株式会社東芝 半導体記憶装置およびその製造方法
JPH03104285A (ja) * 1989-09-19 1991-05-01 Casio Comput Co Ltd 不揮発性半導体メモリ
US5038184A (en) * 1989-11-30 1991-08-06 Xerox Corporation Thin film varactors

Also Published As

Publication number Publication date
WO1993008610A1 (en) 1993-04-29
JPH06502967A (ja) 1994-03-31
JP2780489B2 (ja) 1998-07-30
EP0562101A4 (en) 1994-12-07
KR930702788A (ko) 1993-09-09
DE69230995D1 (de) 2000-06-08
KR0164874B1 (ko) 1998-12-15
EP0562101B1 (en) 2000-05-03
EP0562101A1 (en) 1993-09-29
US5192871A (en) 1993-03-09
DE69230995T2 (de) 2000-11-16

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