DE69230995T2 - Spannungsvariable kapazität mit amorphen dielektrischem film - Google Patents

Spannungsvariable kapazität mit amorphen dielektrischem film

Info

Publication number
DE69230995T2
DE69230995T2 DE69230995T DE69230995T DE69230995T2 DE 69230995 T2 DE69230995 T2 DE 69230995T2 DE 69230995 T DE69230995 T DE 69230995T DE 69230995 T DE69230995 T DE 69230995T DE 69230995 T2 DE69230995 T2 DE 69230995T2
Authority
DE
Germany
Prior art keywords
dielectric film
variable capacity
voltage variable
amorphous dielectric
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69230995T
Other languages
English (en)
Other versions
DE69230995D1 (de
Inventor
S Ramakrishnan
D Cornett
Wei-Yean Howng
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE69230995D1 publication Critical patent/DE69230995D1/de
Application granted granted Critical
Publication of DE69230995T2 publication Critical patent/DE69230995T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
DE69230995T 1991-10-15 1992-10-15 Spannungsvariable kapazität mit amorphen dielektrischem film Expired - Fee Related DE69230995T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/776,034 US5192871A (en) 1991-10-15 1991-10-15 Voltage variable capacitor having amorphous dielectric film
PCT/US1992/008809 WO1993008610A1 (en) 1991-10-15 1992-10-15 Voltage variable capacitor having amorphous dielectric film

Publications (2)

Publication Number Publication Date
DE69230995D1 DE69230995D1 (de) 2000-06-08
DE69230995T2 true DE69230995T2 (de) 2000-11-16

Family

ID=25106274

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69230995T Expired - Fee Related DE69230995T2 (de) 1991-10-15 1992-10-15 Spannungsvariable kapazität mit amorphen dielektrischem film

Country Status (7)

Country Link
US (1) US5192871A (de)
EP (1) EP0562101B1 (de)
JP (1) JP2780489B2 (de)
KR (1) KR0164874B1 (de)
DE (1) DE69230995T2 (de)
DK (1) DK0562101T3 (de)
WO (1) WO1993008610A1 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5173835A (en) * 1991-10-15 1992-12-22 Motorola, Inc. Voltage variable capacitor
US5390072A (en) * 1992-09-17 1995-02-14 Research Foundation Of State University Of New York Thin film capacitors
US5587870A (en) * 1992-09-17 1996-12-24 Research Foundation Of State University Of New York Nanocrystalline layer thin film capacitors
US5933316A (en) * 1993-08-02 1999-08-03 Motorola Inc. Method for forming a titanate thin film on silicon, and device formed thereby
US5623724A (en) * 1994-08-09 1997-04-22 Northrop Grumman Corporation High power capacitor
KR0180779B1 (ko) * 1995-02-27 1999-03-20 김주용 반도체소자의 캐패시터 제조방법
KR100360468B1 (ko) * 1995-03-20 2003-01-24 삼성전자 주식회사 강유전성박막제조방법및이를적용한캐패시터및그제조방법
JPH0931645A (ja) * 1995-07-21 1997-02-04 Sharp Corp 誘電体薄膜素子の製造方法
US5771148A (en) * 1995-11-17 1998-06-23 Motorola, Inc. Intercalation-based voltage variable capacitor
US5747698A (en) * 1996-04-24 1998-05-05 Simmonds Precision Products Inc. Capacitive z-axis strain gauge
US5990766A (en) * 1996-06-28 1999-11-23 Superconducting Core Technologies, Inc. Electrically tunable microwave filters
US6038134A (en) * 1996-08-26 2000-03-14 Johanson Dielectrics, Inc. Modular capacitor/inductor structure
US5910880A (en) 1997-08-20 1999-06-08 Micron Technology, Inc. Semiconductor circuit components and capacitors
US5965912A (en) * 1997-09-03 1999-10-12 Motorola, Inc. Variable capacitor and method for fabricating the same
US6191443B1 (en) 1998-02-28 2001-02-20 Micron Technology, Inc. Capacitors, methods of forming capacitors, and DRAM memory cells
US6730559B2 (en) * 1998-04-10 2004-05-04 Micron Technology, Inc. Capacitors and methods of forming capacitors
KR100494322B1 (ko) * 1999-12-22 2005-06-10 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조 방법
US6278158B1 (en) * 1999-12-29 2001-08-21 Motorola, Inc. Voltage variable capacitor with improved C-V linearity
US7005695B1 (en) 2000-02-23 2006-02-28 Micron Technology, Inc. Integrated circuitry including a capacitor with an amorphous and a crystalline high K capacitor dielectric region
US6953730B2 (en) * 2001-12-20 2005-10-11 Micron Technology, Inc. Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics
US6649281B2 (en) * 2002-03-27 2003-11-18 Raytheon Company Voltage variable metal/dielectric composite structure
US20040121566A1 (en) * 2002-12-23 2004-06-24 Infineon Technologies North America Corp Method to produce low leakage high K materials in thin film form
US7183186B2 (en) * 2003-04-22 2007-02-27 Micro Technology, Inc. Atomic layer deposited ZrTiO4 films
JP4563655B2 (ja) * 2003-04-23 2010-10-13 株式会社日立製作所 半導体装置及びその製造方法
US7588988B2 (en) 2004-08-31 2009-09-15 Micron Technology, Inc. Method of forming apparatus having oxide films formed using atomic layer deposition
US7494939B2 (en) 2004-08-31 2009-02-24 Micron Technology, Inc. Methods for forming a lanthanum-metal oxide dielectric layer
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7972974B2 (en) 2006-01-10 2011-07-05 Micron Technology, Inc. Gallium lanthanide oxide films
JP4953877B2 (ja) * 2006-08-30 2012-06-13 京セラ株式会社 コンデンサ及び高周波部品
JP5104763B2 (ja) * 2006-11-22 2012-12-19 日本電気株式会社 不揮発性記憶装置
EP2787637B1 (de) * 2012-11-14 2016-03-30 NGK Insulators, Ltd. Verbundsubstrat und herstellungsverfahren dafür

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3579278A (en) * 1967-10-12 1971-05-18 Varian Associates Surface barrier diode having a hypersensitive {72 {30 {0 region forming a hypersensitive voltage variable capacitor
US3624895A (en) * 1968-01-11 1971-12-07 Gen Motors Corp Metal-insulator-semiconductor voltage variable capacitor with controlled resistivity dielectric
US3604990A (en) * 1970-04-01 1971-09-14 Gen Electric Smoothly changing voltage-variable capacitor having an extendible pn junction region
US3611070A (en) * 1970-06-15 1971-10-05 Gen Electric Voltage-variable capacitor with controllably extendible pn junction region
US3634738A (en) * 1970-10-06 1972-01-11 Kev Electronics Corp Diode having a voltage variable capacitance characteristic and method of making same
US3860945A (en) * 1973-03-29 1975-01-14 Rca Corp High frequency voltage-variable capacitor
JPH0754846B2 (ja) * 1985-11-29 1995-06-07 株式会社日立製作所 キャパシタの製造方法
JPS62286325A (ja) * 1986-06-05 1987-12-12 Clarion Co Ltd 無線通信装置
US4973922A (en) * 1987-11-27 1990-11-27 At&T Bell Laboratories Voltage controlled variable capacitor and oscillator using it
JPH01222469A (ja) * 1988-03-01 1989-09-05 Fujitsu Ltd 半導体記憶装置とその製造方法
JPH01280347A (ja) * 1988-05-06 1989-11-10 Nec Corp 半導体装置
JPH0236559A (ja) * 1988-07-26 1990-02-06 Nec Corp 半導体装置及びその製造方法
JPH0736438B2 (ja) * 1988-08-25 1995-04-19 日本電気株式会社 半導体装置
JP3195785B2 (ja) * 1989-07-17 2001-08-06 株式会社東芝 半導体記憶装置およびその製造方法
JPH03104285A (ja) * 1989-09-19 1991-05-01 Casio Comput Co Ltd 不揮発性半導体メモリ
US5038184A (en) * 1989-11-30 1991-08-06 Xerox Corporation Thin film varactors

Also Published As

Publication number Publication date
KR930702788A (ko) 1993-09-09
WO1993008610A1 (en) 1993-04-29
EP0562101A4 (en) 1994-12-07
JP2780489B2 (ja) 1998-07-30
EP0562101B1 (de) 2000-05-03
DK0562101T3 (da) 2000-08-07
DE69230995D1 (de) 2000-06-08
KR0164874B1 (ko) 1998-12-15
EP0562101A1 (de) 1993-09-29
JPH06502967A (ja) 1994-03-31
US5192871A (en) 1993-03-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: SCHUMACHER & WILLSAU, PATENTANWALTSSOZIETAET, 80335 MUENCHEN

8339 Ceased/non-payment of the annual fee